Product Description. Ordering Information. GaAs HBT GaAs MESFET. InGaP HBT

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1 InGaP HBT MMIC Amplifier 5MHz to 3MHz RFGA244 InGaP HBT MMIC AMPLIFIER 5MHz TO 3MHz Package: SOT-89 Features Low Cost Broadband Gain Internally Matched Internal Active Bias No Dropping Resistor Single Supply 5V Operation HBM ESD Level >1V Applications PA Driver Amplifier LO Buffer Amplifier Cellular, PCS, GSM, UMTS, LTE, TD-SCDMA Wideband Instrumentation Wireless Data, Satellite Terminals Product Description Functional Block Diagram The RFGA244 is a high performance InGaP HBT MMIC amplifier. The RFGA244's internal active bias circuitry allows the amplifier to operate directly from a 5V supply and provides stable current over temperature and process Beta variation. This Darlington amplifier is internally matched to 5 making it ideal for applications requiring small footprints and minimal external components. Ordering Information RFGA244SR 7 Sample reel with 1 pieces RFGA244SQ Sample bag with 25 pieces RFGA244TR7 7 Reel with 75 pieces RFGA244TR13 13 Reel with 25 pieces RFGA244PCK-41 5MHz to 3MHz PCBA with 5-piece sample bag Optimum Technology Matching Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs phemt Si CMOS Si BJT GaN HEMT BiFET HBT LDMOS RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 26, RF Micro Devices, Inc. 1 of 8

2 Absolute Maximum Ratings Parameter Rating Unit Supply Voltage (V CC ) 6. V Device Current (I CC ) 13 ma CW Input Power, 2:1 Output VSWR 2 dbm CW Input Power, 1:1 Output VSWR 15 dbm Operating Junction Temperature (T J ) 15 C Operating Temperature Range (T L ) -4 to +85 C Storage Temperature -55 to +15 C ESD Rating - Human Body Model 1C (1V) Moisture Sensitivity Level MSL-2 NOTES: 1. The maximum rating must all be met simultaneously. 2. P DISS = P DC + P RFIN - P RFOUT. 3. T J = T L + P DISS * R TH. Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. RFMD Green: RoHS compliant per EU Directive 22/95/EC, halogen free per IEC , < 1ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. Parameter Specification Min. Typ. Max. Unit Condition Typical performance at using the standard sample Linear Operation EVB with R2 = open. This design is for linear operation only. Input Power (P IN ) 6. dbm Max recommended continuous input power, V CC < 5.V, Load VSWR < 2:1 Gain 15.3 db 85MHz db 214MHz 15.1 db 265MHz OIP dbm 85MHz (dbm/tone, 1MHz spacing) dbm 214MHz (dbm/tone, 1MHz spacing) 29. dbm 265MHz (dbm/tone, 1MHz spacing) P1dB 19. dbm 85MHz dbm 214MHz 18.2 dbm 265MHz Input Return Loss 15 db 214MHz Output Return Loss 14 db Isolation 19 db Noise Figure 4.3 db Operating Current (Quiescent) ma At V CC = 5.V Operating Voltage (V CC ) V Max recommended voltage for continuous operation Thermal Resistance (R TH ) 135 C/W At quiescent current, no RF, V CC = 5.V Saturated Operation Typical performance at using the input pull-down resistor (R2 = 5.1 K) to lower quiescent current. See schematic following the "saturated operation plots". Input Power (P IN ) 14 dbm Max. recommended continuous input power V CC < 5.V, Load VSWR < 2:1, R2 = 5.1 K Saturated Output Power 19.4 dbm 85MHz 19.8 dbm 214MHz 19.8 dbm 265MHz Operating Current 9 ma Max recommended current for continuous operation Operating Voltage V Max recommended voltage for continuous operation 2 of 8

3 Typical Performance: 5MHz to 3MHz Application Circuit (Linear Operation, R2 = pen) Input Return Loss versus Frequency 19 Gain versus Frequency Input Return Loss (db) Gain (db) Isolation versus Frequency Output Return Loss versus Frequency -5-5 Isolation (db) Output Return Loss (db) Output IP3 versus Frequency 25 P1dB versus Frequency Output IP3 (dbm) P1dB (dbm) of 8

4 Typical Performance: 5MHz to 3MHz Application Circuit (Linear Operation, R2 = pen) 7 Noise Figure versus Frequency 12 Current versus Voltage Noise Figure (db) Current (ma) Voltage (V) P OUT and Current versus Input Power (85MHz) P OUT and Current versus Input Power (214MHz) P OUT and Current versus Input Power (265MHz) Current (ma) Large Signal Current versus Frequency (, 5Ω) Input Power = +2dBm Input Power = +5dBm Input Power = +8dBm of 8

5 Evaluation Board Schematic 5MHz to 3MHz Application Circuit for Linear Operation Evaluation Board Bill of Materials (BOM) 5MHz to 3MHz Application Circuit Description Reference Manufacturer Manufacturer s P/N Designator GA254 Evaluation Board GA254-41(A) CAP, 1F, 2%, 25V, TANT-A C1 AVX Corporation TAJA15M25 CAP, 1pF, 1%, 5V, X7R, 42 C4, C6-C7 Taiyo Yuden (USA), Inc. RM UMK15BJ12KV-F CAP, 1pF, 5%, 5V, CG, 42 C5 Taiyo Yuden (USA), Inc. RM UMK15CG11JV-F IND, 82nH, 1%, W/W, 85 L1 Coilcraft, Inc. 85CS-82XKBC CONN, SMA, END LNCH, FLT,.62" J1-J2 Johnson Components, Inc CONN, HDR, ST, PLRZD, 2-PIN,.1" P1 ITW Pancon MPSS1-2-C InGaP Darlington HBT Gain Block U1 RFMD GA244 Do Not Place C2-C3, R1-R2 5 of 8

6 Evaluation Board Assembly Drawing Pin Names and Descriptions Pin Name Description 1 RF IN RF Input. External DC block is required. 2 GND DC and RF Ground 3 RF OUT/VCC RF Output, Device Collector 4 GND DC and RF Ground. Must be soldered to EVB ground plane over a bed of vias for thermal and RF performance. 6 of 8

7 Typical Performance under Saturated Operation, R2 = 5.1 K P OUT and Current versus Input Power (85MHz) P OUT and Current versus Input Power (214MHz) P OUT and Current versus Input Power (265MHz) P OUT and Current versus Input Power () Evaluation Board Schematic for Saturated Operation 7 of 8

8 Branding Diagram Package Drawing Dimensions in inches [millimeters] Refer to drawing posted at for tolerances. 8 of 8

9 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: Qorvo: RFGA244 RFGA244TR13 RFGA244SR