PbSe photoconductive detectors
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1 PbSe photoconductive detectors P9696 series P327-8 Infrared detectors with fast response and high sensitivity in 5 μm wavelength band Compared to other detectors used in the same wavelength regions, PbSe photoconductive detectors have faster response and can operate at room temperature, making them widely used in gas analyzers, etc. Cooling these detectors increases the sensitivity and improves the S/N. So cooled type PbSe photoconductive detectors are widely used in high-precision photometry such as for analytical instruments. Features High-speed response Room temperature type and available Lower temperature detection limit: approx. 5 C With bandpass filter: P327-8 Applications Gas analyzer (CH4, CO, CO2) Radiation thermometer Flame detector Film thickness gauge Accessories (options) Heatsink for one-stage A379 Heatsink for two-stage A379- Temperature controller for C3-4 Amplifier for PbS/PbSe photoconductive detector C Infrared detector module with preamp Non-cooled type P4245 Cooled type P4639 Specifications / Absolute maximum ratings Type no. Dimensional outline* Package Cooling area power dissipation* 2 TE-cooler voltage consumption Absolute maximum ratings TE-cooler Incident Supply* 3 current light level voltage consumption Pin Vs Operating temperature Topr Storage temperature Tstg (mm) (mw) (V) (A) (W/cm 2 ) (V) ( C) ( C) P ()/S TO-5 P Non-cooled TO-5* P327-8 (2)/S (with filter) -3-3 to to +6 P One-stage 2 2 (3)/S.85.5 P TE-cooled 3 3 TO-8.2 P Two-stage 2 2 (4)/S.95. P TE-cooled 3 3 Soldering conditions 26 C or less, within seconds *: S=Sapphire glass *2: recommended power dissipation=.3 mw max. *3: Voltage applied to a PbSe detector through a load resistor *4: Half width=4 nm Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings.
2 PbSe photoconductive detectors P9696 series, P327-8 Electrical and optical characteristics (, unless otherwise noted) Type no. Measurement condition Element temperature Td Peak sensitivity wavelength λp Cut-off wavelength λc Photosensitivity* 4 S λ=λp Vs=5 V Detectivity D* (5, 6, ) (λp, 6, ) Rise time tr to 63% resistance T=25 C B constant T=- to 25 C Dark resistance Rd ( C) (μm) (μm) Min. (V/W) (V/W) Min. (cm Hz /2 /W) (cm Hz /2 /W) (cm Hz /2 /W) (μs) Max. (μs) (kω) (MΩ) P P to 3 P327-8* P P P P to *4: Chopping frequency=6 Hz, load resistance=nearly equal to detector dark resistance *5: Half width=4 nm Spectral response P9696 series P327-8 () ( Td=25 C) D* (λ, 6, ) (cm Hz /2 /W) 9 Td=25 C Td=-2 C Td=- C D* (λ, 6, ) (cm Hz /2 /W) Wavelength (µm) KIRDB342EF Wavelength (µm) KIRDB54EB 2
3 PbSe photoconductive detectors P9696 series, P327-8 Spectral transmittance of window material S/N vs. supply voltage (P9696-2) Transmittance (%) () Signal (µv) Light source: black body 5 K Incident energy: 6.7 µw/cm 2 Chopping frequency: 6 Hz Frequency bandwidth: 6 Hz Supply voltage is the value which contains load resistance. S (Signal) N (Noise) ( Ta=25 C) Noise (µv) Wavelength (µm) Supply voltage (V) KIRDB55EA KIRDB547EA S/N vs. chopping frequency Photosensitivity vs. element temperature 2 Light source: black body 5 K Incident energy: 6.7 µw/cm 2 Supply voltage: 5 V S/N (Ta=25 C) ( Ta=25 C) S/N (relative value) S (Signal) N (Noise) Relative sensitivity Light source: black body 5 K Supply voltage: 5 V Incident energy: 6.7 µw/cm 2 Chopping frequency: 6 Hz Chopping frequency (Hz) Element temperature ( C) KIRDB44EB KIRDB442EC Increasing the chopping frequency reduces the /f noise and results in an S/N improvement. The S/N can also be improved by narrowing the noise bandwidth using a lock-in amplifier. Cooling the device enhances its sensitivity, but the sensitivity also depends on the load resistance in the circuit. 3
4 PbSe photoconductive detectors P9696 series, P327-8 Dark resistance, rise time vs. element temperature Linearity ( Ta=25 C) 2 ( Ta=25 C, fully illuminated) Dark resistance Relative value Rise time Relative sensitivity Dependent on NEP Element temperature ( C) Incident light level (W/cm 2 ) KIRDB443EC KIRDB56EA By making the incident light spot smaller than the photosensitive area, the upper limit of the linearity becomes lower. Cooling characteristics of TE-cooler Current vs. voltage characteristics of TE-cooler 4 ( Ta=25 C, Thermal resistance of heatsink=3 C/W).6 ( Ta=25 C, Thermal resistance of heatsink=3 C/W).4 Element temperature ( C) Two-stage One-stage Current (A) One-stage Two-stage Current (A) KIRDB85EB Voltage (V) KIRDB5EC 4
5 PbSe photoconductive detectors P9696 series, P327-8 temperature characteristics 6 ( power dissipation=.3 mw max.) Resistance (Ω) Temperature ( C) KIRDB546EA Connection example (P ) Cable (supplied with C3757-2) C4696 Chopper 2-conductor shielded cable P A379- and heatsink BNC connector cable (sold separately) C C3-4 Power supply for amp Amp Temperature controller Cable (supplied with C3-4) Lock-in amp or spectrum analyzer Connect the C3-4 and power supply ground terminals together. Signal processing circuit KIRDC93EA 5
6 PbSe photoconductive detectors P9696 series, P327-8 Dimensional outlines (unit: mm) () P9696-2/-3 (2) P ±.3 9. ±.3 8. ±. 5.5 ±. 2. ± ±.2 Filter t 8. ±. 5.5 ±. 2. ±.2 3. ± ± Max. 8 Min max. 8 min..8 ±.2 5. ±.2.5 Max. 5. ± ±.2 GND.2 mm max..5 max. GND.2 mm max. KIRDA23EA KIRDA83EB (3) P9696-2/-3 (4) P / ± ±.2 4 ±.2 ± ±.2 4 ±.2 ±.2 ± ± ±.2 2 Min ±.2 2 Min. 5. ±.2 5. ±.2 TE-cooler (-) TE-cooler (+).3 mm max. KIRDA28EB 5. ±.2 5. ±.2.2 ±.2 TE-cooler (-) TE-cooler (+).3 mm max. KIRDA25EB 6
7 PbSe photoconductive detectors P9696 series, P327-8 Related information Precautions Notice Metal, ceramic, Plastic products/precautions Technical information infrared detector/technical information Information described in this material is current as of July, 23. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. HAMAMATSU PHOTONICS K.K., Solid State Division 26- Ichino-cho, Higashi-ku, Hamamatsu City, Japan, Telephone: (8) , Fax: (8) U.S.A.: Hamamatsu Corporation: 36 Foothill Road, P.O.Box 69, Bridgewater, N.J , U.S.A., Telephone: () , Fax: () Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr., D-822 Herrsching am Ammersee, Germany, Telephone: (49) , Fax: (49) France: Hamamatsu Photonics France S.A.R.L.: 9, Rue du Saule Trapu, Parc du Moulin de Massy, 9882 Massy Cedex, France, Telephone: 33-() , Fax: 33-() United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, Tewin Road, Welwyn Garden City, Hertfordshire AL7 BW, United Kingdom, Telephone: (44) , Fax: (44) North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan Kista, Sweden, Telephone: (46) , Fax: (46) Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, int. 6, 22 Arese, (Milano), Italy, Telephone: (39) , Fax: (39) China: Hamamatsu Photonics (China) Co., Ltd.: 2 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 2, China, Telephone: (86) , Fax: (86) Cat. No. KSPD73E3 Jul. 23 DN 7
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Near infrared image sensor (0.9 to 1.7 μm) with 1024 pixels and high-speed line rate The is a 1024-channel, high-speed infrared image sensor designed for applications such as foreign object screening and
More informationMini-spectrometer. SMD series C14384MA-01. High sensitivity in the near infrared region (to 1050 nm), ultra-compact grating type spectrometer
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IMAGE SENSOR CMOS linear image sensor S8377/S8378 series Built-in timing generator and signal processing circuit; single 5 V supply operation S8377/S8378 series is a family of CMOS linear image sensors
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High-speed video data rate: 50 MHz The is a CMOS linear image sensor that delivers a video data rate of 50 MHz. Two package styles are provided: a DIP type and a surface mount type. Features Video data
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High sensitivity, photosensitive area with minute pixels The is a high sensitivity CMOS linear image sensor using a photosensitive area with minute pixels. It has a long photosensitive area (effective
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High sensitivity, photosensitive area with vertically long pixels The is a high sensitivity CMOS linear image sensor using a photosensitive area with vertically long pixels (14 200 μm). Other features
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G1162 series (cooled type) Single video line (256/512 pixels) near infrared image sensor (.95 to 1.67 μm) The G1162 series is an InGaAs linear image sensor designed for near infrared multichannel spectrophotometry.
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