Perugia 16 June 2009 Flavio Dal Corso INFN-Padova 1

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1 Studies of Padova Flavio Dal Corso INFN-Padova

2 Plans & Objectives Characterization of Silicon Photo Multipliers of different manufacturers and geometries: Currents Gain & Efficiency Dark Rate Time resolution on Long term stability Search for the best working point. Comparison of performances. Flavio Dal Corso INFN-Padova 2

3 SiPM are very sensitive to temperature Measurements must be performed in a thermostatic chamber. Cooling element (peltier) Range: 40 C Precision: /6 C improvement heating resistor Control unit SiPM box Flavio Dal Corso INFN-Padova 3

4 Devices Available Current Current time I(V) Gain Dark Rate vs laser Stablity resolution id nome caratteristiche intensity note id SiPM mm 2 Ok I prototipi FBK:abbandonati id 2 SiPM2 mm 2 Ok I prototipi ti i FBK:abbandonati id 3 SiPM3 mm 2 Ok I prototipi FBK:abbandonati id 4 SiPM4 mm 2 Ok I prototipi FBK:abbandonati id 5 SiPM5 mm 2 Ok I prototipi FBK:abbandonati id 6 SiPM 40-I mm pixel 40x40 II prototipi FBK id 7 SiPM 40-II mm pixel 40x40 II prototipi FBK id 8 SiPM 40-III mm pixel 40x40 II prototipi ti i FBK id 9 SiPM 40-IV mm pixel 40x40 Ok Ok da comp. poco II prototipi FBK. Ceduto a Evgeniy Kravchenko id SiPM 50-I mm pixel 50x50 Ok Ok Ok II prototipi FBK id SiPM 50-II mm pixel 50x50 II prototipi FBK id 2 SiPM 50-III mm pixel 50x50 II prototipi FBK id 3 SiPM 50-IV mm pixel 50x50 da comp. Ok Ok da comp. II prototipi FBK id 4 SiPM 0-I mm 2 0 pixel 0x0 Ok Ok Ok Ok Ok II prototipi FBK id 5 SiPM 0-II mm 2 0 pixel 0x0 Ok male Ok male II prototipi FBK id 6 MPPC 25U-355 mm pixel 25x25 Hamamatsu id 7 MPPC 25U-356 mm pixel 25x25 Hamamatsu id 8 MPPC 50U-old mm pixel 50x50 male Hamamatsu id 9 MPPC 50U-503 mm pixel 50x50 Ok male Hamamatsu. Ceduto a Evgeniy Kravchenko id 20 MPPC 50C-79 mm pixel 50x50 Hamamatsu id 2 MPPC 0U-38 mm 2 0 pixel 0x0 Ok NO Ok poco Hamamatsu id 22 MPPC 0U-39 mm 2 0 pixel 0x0 Hamamatsu id 23 MPPC 0P-66 9 mm pixel 0x0 Ok NO Ok Hamamatsu id 24 CPTA ,4 mm pixel 50x50 Ok Ok Ok Ok Ok from CPTA (da Evgeniy Kravchenko ) Green: measurement done Yellow: not completed Red: tried unsuccessfully Flavio Dal Corso INFN-Padova 4

5 ) Devices Characterization Current vs Vbias & Temperature SiPM (FBK),E-04,E-05 SiPM 40 IV I(V) curves very regular,e-06 Low and linear T dependence Quite high I ( few μa) at working point SiPM 50 I Current (A),E-07,E-08,E-09,E Vbias (V) C 5 C 40 C A,E ,E-05,E-06,E-07,E-08,E-09 A,E-05 C,E-06 5 C SiPM 0 I,E ,5 3 3, , , ,5 35,E-07,E-08,E-09 C 5 C 23 C 24 C,E- V,E- V Flavio Dal Corso INFN-Padova 5

6 Devices Characterization Current vs Vbias & Temperature Current (A),E-04,E-05,E-06,E-07,E-08,E-09,E- MPPC C 5 C MPPC (Hmamatsu): I(V) curves quite irregular Higher and non-linear T dependence Lower current ( μa) 40 C,E-,E Vbias (V) MPPC 0 38,E ,E-04 MPPC 0P 66,E ,E-05 A,E-05,E-06,E-07,E-08 E09,E A,E-06,E-07,E-08,E-09, ,8 39,8,E-,E-,E-2 mv,e- Flavio Dal Corso INFN-Padova,E- 6 mv

7 Devices Characterization Gain mv Gain(mV/e) 40 SiPM SiPM 50 I V SiPM 50 y = 36.85x - 26 (^C) y = x - 28 (5^C) y = x (20^C) y = 35.78x (25^C) y = 34.9x (30^C) y = 34.48x (35^C) C gain (mv/g) 5 C gain (mv/g) gain (mv/g) gain (mv/g) gain (mv/g) gain (mv/g) Lineare ( gain (mv/g)) Lineare ( gain (mv/g)) Lineare ( C gain (mv/g)) Lineare (5 C gain (mv/g)) Lineare ( gain (mv/g)) Lineare ( gain (mv/g)) V-V(0) C 5 C Gain (mv/γ) (FBK) Characteristics very linear, both G(V) and G(T). G(V-Vo) Vo) doesn't depend on T (Vo = G=0) absolute definition of Working Point (no gain measurement performed on MPPC up to now) SiPM_40x40_IV Temperature ( C) Flavio Dal Corso INFN-Padova Lineare (35.4) Lineare (35) Lineare (34.6) Lineare (34.2) Lineare (33.8) Lineare (33.4)

8 Dark Rates SiPM_50x50_IV SiPM_50x50_IV Rate (KHz) Dark Threshold (# of photons) 33V 5 C 34V 5 C 35V 5 C Dark Rate (KHz) g 33V 05g34V 0.5g 0.5g 35V.5g 33V.5g 34V.5g 35V 2.5g 33V 000 SiPM_50x50_IV g 34V 2.5g 35V Dark Rate (KHz) Dark Rate (KHz) Threshold (# of photons) SiPM_50x50_IV Threshold (# of photons) 33V 34V 35V 33V 34V 35V Temperature ( C) SiPM (FBK) Almost flat vs temperature Dark rate decrease very quickly with threshold, Flavio Dal Corso INFN-Padova 8

9 KHZ , 0,0 dark Rate SiPM Vthr (mv) Dark Rates Comparisons 33 V 34 V 35 V 36 V 37 V Moderate dependence on geometry (SiPM50 SiPM0) MPPC less noisy than SiPM at γ, more noisy at 2 γ (but a better comparison will require some normalization wrt gain, efficiency etc ) Dark Rate SiPM 0 Dark Rate MPPC KHz 33.5V 34V 34.5V khz 69V 69.5V 70V , 0, 0,0 Vthr (mv) 0,0 mv Flavio Dal Corso INFN-Padova 9

10 Devices Characterization Reverse Current Stability Cur (A) SiPM 0 I Current 725E-06,725E,720E-06,75E sec SiPM 40 IV Current FBK devices show jumps, fluctuations, slow drifts. Impacts on dark rate, gain, device life? Hamamatsu devices seem more stable. Very preliminary results (few devices measured, influence from environment?) 4,760E-06 4,750E-06 4,740E-06 4,730E-06 4,720E-06 4,7E-06 4,700E-06 4,690E ,680E-06 4,670E MPPC 0U-38 current stability sec Current stability SiPM 50 I 8 na na sec Flavio Dal Corso INFN-Padova sec

11 CPTA 49-35,E ,E-05 A KHz,E-06,E-07,E-08,E-09 V Dark Rate mv C 5 C 37V 38V 39V I(V) characteristic ti very regular: stronger T dependence w.r.t. SiPM Quite low reverse current and Dark Rate (comparable to mm 2 devices) Flavio Dal Corso INFN-Padova

12 CPTA Gain mv y = 2,345x - 74,9 y = 2,3433x - 74,332 y = 2,359x - 75,282 y = 2,35x - 75,474 y = 2,322x - 74,302 y = 2,2444x - 72,377 C 5 C Lineare ( C) Lineare (5 C) 8 Lineare () Lineare () Lineare () 6 CPTA gain Lineare () V Very good gain Less linear vs T at high T G(V-Vo) not completely independent from T 6 Gain (mv/e) 4 2 C 5 C V-Vo Flavio Dal Corso INFN-Padova 2

13 Plans Radiation i hardness studies: next week a single SIPM will be irradiated with MeV neutron at LNL Works in progress : Characterization of all devices Absolute efficiency measurements Time resolution measurements Electronics optimization : - higher amplification - s/n improvements (studies of charge integrating ADC vs peak sensing ADC) Procurement of FBK devices 5x5 mm 2 (array of 8x8 SiPM,.5x.5 mm 2 each, on a single chip) Flavio Dal Corso INFN-Padova 3

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