Distance area image sensor

Transcription

1 Measures the distance to an object by TOF (Time-Of-Flight) method The distance image sensors are designed to measure the distance to an object by TOF method. When used in combination with a pulse modulated light source, this sensor outputs phase difference information on the timing that the light is emitted and received. The sensor output signals are arithmetically processed by an external signal processing circuit or a PC to obtain distance data. Features High-speed charge transfer structure Operates with minimal detection errors even under fluctuating (charge drain function) Real-time distance measurement Applications Obstacle detection (self-driving, robots, etc.) Security (intrusion detection, etc.) Shape recognition (logistics, robots, etc.) Motion capture Structure Parameter Specification Unit Image size mm Pixel size μm Pixel pitch 40 μm Number of pixels pixels Number of effective pixels pixels Package 48-pin PWB - Window material AR-coated glass - Note: This product is not hermetically sealed. Absolute maximum ratings Parameter Symbol Condition alue Unit Analog supply voltage dd(a) Ta=25 C -0.3 to +6 Digital supply voltage dd(d) Ta=25 C -0.3 to +6 Pixel amplifier sf Analog input terminal Pixel reset r voltage Output offset ref Ta=25 C -0.3 to dd(a) Photosensitive area pg Frame reset pulse reset Frame synchronous trigger pulse vst Digital input terminal Line synchronous trigger pulse voltage Pixel reset pulse ext_res Ta=25 C -0.3 to dd(d) Master clock pulse Charge transfer clock pulse voltage TX1, TX2, TX3 Ta=25 C -0.3 to dd(a) Operating temperature Topr No condensation -25 to +85 C Storage temperature Tstg No condensation -40 to +100 C Reflow soldering conditions* 1 Tsol 260 C max. 2 times (see P.10) - *1: JEDEC level 3 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. 1

2 Recommended terminal voltage (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Analog supply voltage dd(a) Digital supply voltage dd(d) Pixel amplifier sf dd(a) Bias voltage Pixel reset r Output offset ref Photosensitive area pg Frame reset pulse voltage High level dd(d) reset Low level - - dd(d) 0.2 Frame synchronous trigger pulse High level dd(d) vst voltage Low level - - dd(d) 0.2 Line synchronous trigger pulse High level dd(d) voltage Low level - - dd(d) 0.2 Master clock pulse voltage High level dd(d) Low level - - dd(d) 0.2 Pixel reset pulse voltage High level dd(d) ext_res Low level - - dd(d) 0.2 Output signal effective period High level dd(d) oe pulse voltage Low level - - dd(d) 0.2 Output signal synchronous pulse High level dd(d) dclk voltage Low level - - dd(d) 0.2 High level dd(d) Non-readout period pulse voltage dis_read Low level - - dd(d) 0.2 Electrical characteristics [Ta=25 C, dd(a)=dd(d)=5 ] Parameter Symbol Condition Min. Typ. Max. Unit Clock pulse frequency f() 1 M - 10 M Hz ideo data rate R - f() - Hz Current consumption Ic Dark state ma Electrical and optical characteristics [Ta=25 C, dd(a)=dd(d)=5, sf=5, r=4.25, MCLK=5 MHz] Parameter Symbol Min. Typ. Max. Unit Spectral response range λ 400 to 1100 nm Peak sensitivity wavelength λp nm Photosensitivity* 2 S /W s Dark output d /s Random noise RN m rms Dark output voltage* 3 or ref ref Saturation output voltage sat ref ref Sensitivity ratio* 4 SR Photoresponse nonuniformity* 5 PRNU - - ±10 % *2: Monochromatic wavelength source (λ=805 nm) *3: Output voltage right after reset in dark state *4: Sensitivity ratio of out1 (TX1=3, TX2=TX3=0 ) to out2 (TX2=3, TX1=TX3=0 ) *5: Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly illuminated by white light which is approx. 50% of the saturation level. PRNU is measured using the pixels excluding the pixels of the 4 outermost lines and defective pixels, and is defined as follows: PRNU= X/X 100 (%) X: average output of all pixels, X: standard deviation of pixel output 2

3 Spectral response 100 (Typ. Ta=25 C) 80 Relative sensitivity Wavelength (nm) KMPDB0375EA Block diagram GND dd(a) GND GND dd(a) TX1 TX2 TX3 GND dd(a) GND 33 dd(a) 32 GND ertical shift register Photodiode array pixels (number of effective pixels: pixels) 31 pg 30 sf 29 r 28 ref ext_res reset vst Timing generator CDS circuit Horizontal shift register Buffer amplifier 27 out1 26 out2 25 GND 23 dd(a) 22 GND oe dclk dis_read GND GND dd(d) GND dd(d) KMPDC0438EC Basic connection example out 1 Buffer amplifier out 2 Buffer amplifier KMPDC0486EA 3

4 Timing chart Using TX3 allows changing the light source duty ratio to increase the light emission power. When thp(tx3) is set to 0 ns, the light source can be driven with a duty ratio of 50%. Frame timing t13 (readout time) t14 (integration time) reset t1 t2 t3 t4 vst t5 t6 t7 t8 t9 t10 t11 t12 1 (1H) 2 N (1H) N (1H) 72 (1H) TX1, 2, 3 TX enable t16 TX enable t17 dis_read ext_res t18 t19 Pulsed light thp(tx1) TX1 tpi(tx) tlp(tx1) TX2 TX3 thp(tx2) tlp(tx2) thp(tx3) tlp(tx3) TX enable KMPDC0439EB tr(reset) tf(reset) tr() tf() reset tf(dclk) tr(dclk) dclk tr(vst) tf(vst) tr() tf() td(dclk) td(vout) vst out1 out2 0.1 tr(vout) tf(vout) tr (dis_read) tf(dis_read) tr(oe) tf(oe) dis_read oe td(dis_read) td(oe) td(ext_res) tf(ext_res) ext_res KMPDC0440EA 4

5 Calculation method of frame rate Frame rate=1/(time per frame) =1/(Integration time + Readout time) Integration time: It is necessary to be changed by the required distance accuracy and usage environment factors such as fluctuating background light. 1 Readout time= Horizontal timing clock Number of vertical pixels Clock pulse frequency =Time per clock (Readout time per pixel) Horizontal timing clocks Number of vertical pixels Calculation example of readout time (clock pulse frequency: 5 MHz, horizontal timing clocks: 110, number of vertical pixels: 72) 1 Readout time= [Hz] =200 [ns] =1.584 [ms] Horizontal timing Frame timing 1 (1H) 110 (= ) oe dclk 38 t out1 out2 KMPDC0441EA 5

6 Parameter Symbol Min. Typ. Max. Unit Master clock pulse duty ratio % Master clock pulse rise and fall times tr(), tf() 0-20 ns Frame reset pulse rise and fall times tr(reset), tf(reset) 0-20 ns Frame synchronous trigger pulse rise and fall times tr(vst), tf(vst) 0-20 ns Line synchronous trigger pulse rise and fall times tr(), tf() 0-20 ns Pixel reset pulse rise and fall times tr(ext_res), tf(ext_res) 0-20 ns Time from falling edge of master clock pulse to rising edge of frame reset pulse t1 1/4 1/f() - 1/2 1/f() s Time from rising edge of frame reset pulse to falling edge of master clock pulse t2 1/4 1/f() - 1/2 1/f() s Time from falling edge of master clock pulse to falling edge of frame reset pulse t3 1/4 1/f() - 1/2 1/f() s Time from falling edge of frame reset pulse to falling edge of master clock pulse t4 1/4 1/f() - 1/2 1/f() s Time from falling edge of master clock pulse to rising edge of frame synchronous trigger pulse t5 1/4 1/f() - 1/2 1/f() s Time from rising edge of frame synchronous trigger pulse to falling edge of master clock pulse t6 1/4 1/f() - 1/2 1/f() s Time from falling edge of master clock pulse to falling edge of frame synchronous trigger pulse t7 1/4 1/f() - 1/2 1/f() s Time from falling edge of frame synchronous trigger pulse to falling edge of master clock pulse t8 1/4 1/f() - 1/2 1/f() s Time from rising edge of master clock pulse to rising edge of line synchronous trigger pulse t9 1/4 1/f() - 1/2 1/f() s Time from rising edge of line synchronous trigger pulse to rising edge of master clock pulse t10 1/4 1/f() - 1/2 1/f() s Time from rising edge of master clock pulse to falling edge of line synchronous trigger pulse t11 1/4 1/f() - 1/2 1/f() s Time from falling edge of line synchronous trigger pulse to rising edge of master clock pulse t12 1/4 1/f() - 1/2 1/f() s Readout time t13 (110/f() + t15) 72 + t18 + t s Integration time t ms Time from rising edge of master clock pulse (after reading signals from all pixels) to rising edge of master clock pulse (: high period) t15 10/f() - - s Time from falling edge of master clock pulse to rising edge of output signal synchronous pulse td(dclk) ns Output signal synchronous pulse output voltage rise time (10 to 90%)* 6 tr(dclk) ns Output signal synchronous pulse output voltage fall time (10 to 90%)* 6 tf(dclk) ns Time from rising edge of master clock pulse to rising edge of output signal effective period pulse td(oe) ns Output signal effective period pulse rise time (10 to 90%)* 6 tr(oe) ns Output signal effective period pulse fall time (10 to 90%)* 6 tf(oe) ns Settling time of output signal 1, 2 (10 to 90%)* 6 * 7 tr(out), tf(out) ns Time from rising edge of master clock pulse to output signal 1, 2 (output 50%)* 6 td(out) ns *6: CL=3 pf *7: Output voltage=0.1 6

7 Parameter Symbol Min. Typ. Max. Unit Charge transfer clock pulse interval tpi(tx) ns Charge transfer clock pulse (TX1) high period thp(tx1) ns Charge transfer clock pulse (TX1) low period tlp(tx1) - tpi(tx) - thp(tx2) - - ns thp(tx3) Charge transfer clock pulse (TX2) high period thp(tx2) ns Charge transfer clock pulse (TX2) low period tlp(tx2) - tpi(tx) - thp(tx1) - - ns thp(tx3) Charge transfer clock pulse (TX3) high period thp(tx3) ns Charge transfer clock pulse (TX3) low period tlp(tx3) - tpi(tx) - thp(tx1) - - ns thp(tx2) Charge transfer clock pulse voltage rise time tr(tx) ns Charge transfer clock pulse voltage fall time tf(tx) ns High level Charge transfer clock pulse voltage TX1, TX2, TX3 Low level Time from falling edge of pixel reset pulse to TX enable period=on t s Time from TX enable period=off to falling edge of frame reset pulse t s Time from rising edge of line synchronous trigger pulse (last pulse) to rising edge of pixel reset pulse t s Pixel reset pulse high period t μs Time from rising edge of line synchronous trigger pulse to rising edge of non-readout period pulse* 6 td(dis_read) ns Non-readout period pulse rise time (10 to 90%)* 6 tr(dis_read) ns Non-readout period pulse fall time (10 to 90%)* 6 tf(dis_read) ns Input terminal capacitance (Ta=25 C, dd=5 ) Parameter Symbol Min. Typ. Max. Unit Charge transfer clock pulse internal load capacitance CLTX pf 7

8 Dimensional outline (unit: mm) Recommended land pattern (unit: mm) Index mark ϕ Photosensitive area P0.6 11= Hole (3 ) ϕ P0.6 5=3.0 Photosensitive surface KMPDC0442EA P0.6 11= P0.6 5= (44 ) ϕ Electrode (48 ) 0.4 Tolerance unless otherwise noted: ±0.2, ±2 KMPDA0299EB 8

9 Pin connections Pin no. Symbol I/O Description 1 GND I Ground 2 dd(a) I Analog supply voltage 3 GND I Ground 4 NC - No connection 5 dis_read O Non-readout period pulse 6 ext_res I Pixel reset pulse 7 reset I Frame reset pulse 8 vst I Frame synchronous trigger pulse 9 oe O Output signal effective period pulse 10 I Line synchronous trigger pulse 11 I Master clock pulse 12 GND I Ground 13 NC - No connection 14 dclk O Output signal synchronous pulse 15 GND I Ground 16 dd(d) I Digital supply voltage 17 NC - No connection 18 NC - No connection 19 NC - No connection 20 GND I Ground 21 dd(d) I Digital supply voltage 22 GND I Ground 23 dd(a) I Analog supply voltage 24 NC - No connection 25 GND I Ground 26 out2 O Output signal 2 27 out1 O Output signal 1 28 ref I Bias voltage (output offset) 29 r I Bias voltage (pixel reset) 30 sf I Bias voltage (pixel amplifier) 31 pg I Bias voltage (photosensitive area) 32 GND I Ground 33 dd(a) I Analog supply voltage 34 NC - No connection 35 NC - No connection 36 GND I Ground 37 NC - No connection 38 NC - No connection 39 dd(a) I Analog supply voltage 40 GND I Ground 41 TX3 I Charge transfer clock pulse 3 42 TX2 I Charge transfer clock pulse 2 43 TX1 I Charge transfer clock pulse 1 44 dd(a) I Analog supply voltage 45 GND I Ground 46 NC - No connection 47 NC - No connection 48 NC - No connection Note: Leave the NC terminals open and do not connect them to GND. Connect impedance convering buffer amplifiers to out1/out2 so as to minimize the current flow. 9

10 Measured example of temperature profile with hot-air reflow oven for product testing 300 C 260 C max. 230 C Temperature 190 C 170 C Preheat 60 to 120 s Soldering 40 s max. Time KMPDB0381EA This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 C or less and a humidity of 60% or less, and perform soldering within 168 hours. The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used. Before actual reflow soldering, check for any problems by testing out the reflow soldering methods in advance. Related information Precautions Notice Surface mount type products / Precautions Image sensors / Precautions Information described in this material is current as of July, Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. HAMAMATSU PHOTONICS K.K., Solid State Division Ichino-cho, Higashi-ku, Hamamatsu City, Japan, Telephone: (81) , Fax: (81) U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J , U.S.A., Telephone: (1) , Fax: (1) Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D Herrsching am Ammersee, Germany, Telephone: (49) , Fax: (49) France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, Massy Cedex, France, Telephone: 33-(1) , Fax: 33-(1) United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) , Fax: (44) North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan Kista, Sweden, Telephone: (46) , Fax: (46) Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, Arese (Milano), Italy, Telephone: (39) , Fax: (39) China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing , China, Telephone: (86) , Fax: (86) Cat. No. KMPD1141E03 Jul DN 10