RFSOI and FDSOI enabling smarter and IoT applications. Kirk Ouellette Digital Products Group STMicroelectronics

Transcription

1 RFSOI and FDSOI enabling smarter and IoT applications Kirk Ouellette Digital Products Group STMicroelectronics

2 ST in the IoT already Today 2 Kirk Ouellette More then Moore Workshop - Shanghai - March 17, 2015

3 ST in the IoT already Today 3 ST is leading the IoT Standard Component Market with STM32 and MEMS today Kirk Ouellette More then Moore Workshop - Shanghai - March 17, 2015

4 IoT Market Dynamics 4 Cloud & Network infrastructure IoT and Mobile Phone Devices Traffic & storage explosion driving Explosion of connected devices Technology impact Higher integration & performance Power efficiency 5G and 60GHz enablement Technology impact Ultra low power sensors Integration Digital, RF, Power Management Higher performance at lower power Today`s Discussion: RFSOI and FDSOI Kirk Ouellette More then Moore Workshop - Shanghai - March 17, 2015

5 Acceleration of smarter integration in the IoTClient IoT Client Device 5 RFSOI Device FDSOI Device RFSOI 130nm and lower Higher Integration of RF components for the interface to the internet LTE, Wifi etc Able to replace RF Filters and GaAs discrete components required today FDSOI 28nm and lower Perfect fit for Advanced IoT Main SOC High Speed with Low Power and Leakage Easy Integration of Analog SOC interfaces into main SOC Kirk Ouellette More then Moore Workshop - Shanghai - March 17, 2015

6 6 RFSOI - RF and Wifi Front End Modules integration for IoT Kirk Ouellette More then Moore Workshop - Shanghai - March 17, 2015

7 The IoT: Leveraging the Internet to make Things smarter 7 Smart City Smart Home Smart Industry & services Smart Car Wearable Kirk Ouellette More then Moore Workshop - Shanghai - March 17, 2015

8 RF demands increasing in clients 8 More bands with LTE Carrier Aggregation for faster data transfer Envelop Tracking MIMO Multiple Input, Multiple Output, 60GHz, 5G Kirk Ouellette More then Moore Workshop - Shanghai - March 17, 2015

9 RF Front End Development trends 9 Switch LTE-A increasing switching requirements MIMO techniques increase complexity of antenna switch CA requires level of linearity at target of -90 dbm harmonic Power Amplifier PAs number increase to support the growing number of frequency bands and more complex MIMO architectures Demand for high-performance PAs push towards new architecture Filters High number of bands and co-existence with other wireless technologies (WiFi, Bluetooth both operating at GHz) drives more use of both BAW and SAW filters Kirk Ouellette More then Moore Workshop - Shanghai - March 17, 2015

10 RFSOI Adoption 10 GaAs SoS CMOS RFSOI Insertion loss Isolation PA linearity/pae Low Cost The answer to FEM complexity growth is the RFSOI integration RFSOI is closely following GaAs PA performance now Integration Benefits of Monolithic Integration Reduced size and cost Improved performance Reducing inter-die signal routing and constrains of MCM Taking advantage of shorter and faster on die interconnection Simplified supply-chain Reduced and simplified product development cycle time

11 RFSOI FEM Integration: The Next Step 11 Source: Techinsights, Aug Source: ST Internal Data Front-End integration is the path for small, performing and cost effective solutions to address Kirk Ouellette 3G More LTE/4G then Moore Workshop CA and - Shanghai WiFi - March ac 17, 2015

12 ST H9SOI_FEM: The Technology for FEM integration Kirk Ouellette More then Moore Workshop - Shanghai - March 17, 2015

13 From H9SOI to H9SOI_FEM 14 Years of History 13 H9SOI is the result of a close collaboration started in 2000 among CEA-Leti, STM and SOITEC H9SOI in production since 2009 More than 500M RF switches produced for Mobile Applications H9SOI_FEM introduced in 2013 with Better performances Optimized and simpler process Reduced lead-time Switch/PA/Filters integration capability TEM section NMOS 2.5V TEM section NLDEMOS Kirk Ouellette More then Moore Workshop - Shanghai - March 17, 2015

14 H9SOI_FEM: developed for FEM integration 14 Integrated SOI RF FEM 2G Switches 3G / 4G Switches Antenna Tuning MMMB PA MMMB PA + Switches MMMB PA + Switches Antenna Tuning MMMB PA + Switches Antenna Tuning ET Energy Management Filtering Switching Power Amplifier Filtering Antenna Tuner Tunable Duplexer LNA ST testchips Kirk Ouellette More then Moore Workshop - Shanghai - March 17, 2015

15 15 FDSOI For IoT SoCs and Infrastructure SoCs Kirk Ouellette More then Moore Workshop - Shanghai - March 17, 2015

16 A Transistor Technology 16 Bulk Gate Gate Source Drain Source Drain Ultra-Thin Buried oxide Substrate Punch Through! Substrate Typical Transistor in today CMOS System on Chip Change of Substrate adding the thin Buried oxide Improving power Efficiency Bringing high flexibility in SoC integration Kirk Ouellette More then Moore Workshop - Shanghai - March 17, 2015

17 addressing Power sensitive Markets 17 FinFet Consumer Multimedia High end servers Networking Infrastructure Internet of Things, wearables Laptops & tablet-pc Smartphone Automotive Available from 28nm node Ultimate Digital Integration Ultimate Digital + AMS + RF + Integration Kirk Ouellette More then Moore Workshop - Shanghai - March 17, 2015

18 : Performance and Simplicity 18 Process steps FinFET Same as 28LP Adjuste d from 28LP 14% FD-SOI specific 2% Fully depleted transistor but different rotation FD-SOI re-use most of Planar Manufacturing Kirk Ouellette More then Moore Workshop - Shanghai - March 17, 2015

19 Benefits for the IoT 19 Smart Car Smart Home Healthcare wellness Smart City Smart Industrial Challenges Benefits Ultra low power SOC Ultra low voltage operations with high performance. Integration Power / performance flexibility Easy and efficient analog integration (ADC/DACs, RF, LDOs, ) One Devices for all voltages - sleep mode not needed Kirk Ouellette More then Moore Workshop - Shanghai - March 17, 2015

20 Extreme Scalability in Power/Performance 20 Allows the widest V dd range for voltage scaling without impacting CPU performance Still guaranteeing top speeds at very low voltage CPU freq. (GHz) GHz at 1.0V GHz at 1.34V Unique FDSOI techniques enable energy efficiency optimization further by body biasing MHz at 0.5V 1 GHz at 0.61V CPU supply (V) Example Application Processor running Dual Cortez A9 from 1Ghz to 3Ghz efficiently Real measurements of continuous DVFS in the range 0.5V 1.4V Performed on a very large number of ICs, showing extremely good reliability of the DVFS in this range Kirk Ouellette More then Moore Workshop - Shanghai - March 17, 2015

21 Example: Ultra Low Power in IoT 21 FSDOI - SoC 34 mw* Power Supply Loss SoC Power Consumption RF Analytics RF CPU & Memories Analytics Power Management CPU & Memories <10 mw* <5 mw** Other 40LP FD-SOI 28nm FD-SOI 14nm X3 to X6 Power Consumption Improvement with FD-SOI Kirk Ouellette More then Moore Workshop - Shanghai - March 17, 2015 * Measured on Silicon / Product Simulation ** Projection

22 Advantages in Analog Design 22 Efficient Short Devices Improved Analog Perf. Improved Noise NMOS_SOI_W=9(µm) 1,E-06 model L=0,903(µm) Higher Gm for a given current density SI d/id²(/hz) L=0,03(µm) 1,E-07 1,E-08 1,E-09 1,E-10 1,E-06 1,E-11 1,E-08 1,E-07 1,E-06 1,E-05 1,E-04 1,E-07 1,E-03 1,E-02 I drain(a) NRVT_Bulk_W=9(µm) SI d/id²(/hz) model L=0,903(µm) L=0,03(µm) L=9,903(µm) L=0,273(µm) 1,E-08 1,E-09 1,E-10 1,E-11 1,E-08 1,E-07 1,E-06 1,E-05 1,E-04 1,E-03 1,E-02 I drain(a) 0,45 0,4 NMOS C028_SOI C045 σ(log(w*l*si d/id²)) 0,35 0,3 0,25 0,2 0,15 0,1 C028_LVT Efficient use of short devices : High analogue Low L Low Vt mismatch (Avt ~ 2mv/µm) Performance example: A 10µm/100nm device has a DC gain of 100, & a σvt of only 2mV! Lower gate capacitance Higher achievable bandwidth or lower power for a given bandwidth 0, /sqrt(W*L)(µm -2 ) Same normalized drain current noise between BULK and FD- SOI Lower noise variability for FD- SOI Improved noise in FD-SOI Courtesy, L. Vogt, F. Paillardet, C. Charbuillet, P. Scheer, STMicroelectronics Porting of most Analog Macros simpler into FDSOI then FinFET or Bulk Planar

23 Path for IoT Performance and Integration % speed -50% power Mass Production Development FD-SOI 14nm Research Body Bias, cost, simplicity, reliability FD-SOI 28nm RF, Mixed Signal Ultra Low voltage Embedded Non Volatile High High Density Density & & perf RAM perf RAM Differentiated options for the long lasting 28nm process node Kirk Ouellette More then Moore Workshop - Shanghai - March 17, 2015

24 Fast Growing Ecosystem 24 Ecosystem Products Services IPs Tools & EDA Wafer & Foundry Enabling Consumer, Mobile, Networking and Automotive markets today Kirk Ouellette More then Moore Workshop - Shanghai - March 17, 2015

25 Takeaways 25 FDSOI has many designs on-going world wide Multiple applications including IoT Mature Design and Manufacturing available now Rapidly growing Ecosystem Production of FDSOI products in various applications starting this year Efficient Flexible Simple Key benefits for IoT applications Performance vs. Power scalability Analog Integration RF Integration FDSOI has superior price vs. performance metrics compared to FinFETs for many IoT applications

26 26 IoT Device Development Trends and Supply Chain Kirk Ouellette More then Moore Workshop - Shanghai - March 17, 2015

27 The boom of connected devices Billion 50 Billion 27 Wearable Healthcare Wellness Connected Devices *Excluding Mobile phones, Tablets & PCs x200 Car infotainment Intelligent buildings Home automation Industrial Utilities Mobile phones, Tablets & PCs x3 Hubs & Gateway x4 Infrastructure x2 Source: PiperJaffray / Cisco

28 Technology supplier chain 28 Silicon Foundry Physical, standard and custom IP Validated on process Vertical integration for SOC design and supply or Design house ASIC Model Tested SOC Final IoT product and system developer Wafers COT++ Supplier Without a IP available by Process supplier key value of process may not met and speed and performance may not meet requirements Kirk Ouellette More then Moore Workshop - Shanghai - March 17, 2015

29 ST Continued Investment in RFSOI and FDSOI 29 CR200 (200mm) CR300 (300mm) Crolles Grenoble Aix-en-Provence R8 (200mm) Rousset 3 Fabs 4,930 employees 26,500 m² of cleanroom 1,380,000 Wafers / year in 8 wafers equivalent

30 Complete Design Solution Available 30 Complete & flexible offering to match your technical and business requirements IPs Design Tools & Methodologies RFSOI IPs SerDes Multimedia CAD kits Power Amp CPU GPU Interfaces Design Factory Envelope Tracking System Foundations Si Validation & Qualification Switching, LNA and Filters Technology & Manufacturing Kirk Ouellette More then Moore Workshop - Shanghai - March 17, 2015

31 ST Technologies for IoT Clients and Infrastructure 31 RFSOI H9SOI_FEM RF - SOI the perfect technology for integration of RF Front End 28nm FDSOI 28nm FDSOI is the optimum technology for analog and RF integration for the next generation of IoT devices 14nm FDSOI Best in market performance/power technology for Network Infrastructure ASICs BICMOS9MW BICMOS Highest performance for RF infrastructure and future 5G RF BICMOS55 BICMOS and Silicon Photonics are becoming the optimum solution for 500m+ Optical cable and future 1Tb Optical Products

32 32 Kirk Ouellette More then Moore Workshop - Shanghai - March 17, 2015