Single Event Burnout testing of high power Schottky diodes

Transcription

1 Single Event Burut testing of high power diodes Presented by Pierre GARCIA Eal LE GOULVEN, Fabien WIDMER, Athina VAROTSOU with the support of Cesar BOATELLA-POLO Contract No TRAD, Tests & Radiations

2 Introduction This project at a glance : 40h of beam Around 270 Runs 20 references tested Around 100 parts irradiated 2 TRAD, Tests & Radiations

3 Introduction Silicon diodes have been traditionally considered immune to destructive SEE Recent works published on literature have shown that silicon power diodes may be sensitive to destructive events while reverse biased under heavy ion irradiation This activity consists of performing SEB test under heavy ions on 20 different references of 7 different manufacturers For this study parts were provided by STMicroelectronics, Thales Alenia Space and Airbus Defence and Space 3 TRAD, Tests & Radiations

4 Previous campaign 2015 QPL product New generation prototype 4 TRAD, Tests & Radiations

5 STMicroeletronics Results Irradiation performed at Ganil Xe (LET=61.02MeV.cm²/mg) Kr (LET=27.18MeV.cm²/mg) Ok PIST Fail Ok PIST Fail STPS20100 (QPL) 75% 80% 100% STPS1045 (QPL) 100% STPS6045 (QPL) 100% 75% STPS40100 (QPL) 70%* 75% 100% STPS3045 (NEW) < 50%** 50% 78% 78% 100% STPS20200 (NEW) 50% 75% 75% 100% STPS61170C (NEW) 40% 50% 76% 44% 59% STPS40H100 (NEW) 50% 65% 80% 75% 100% *2 parts pass 75% **Not tested All QPL parts considered PASS at 75% These parts are used on space mission at 75% maximum Vr New prototypes are considerably more sensitive to SEB Fail : IR > VRRM PASS: IR < VRRM Number XX% : Value of the % of VRMAX 5 TRAD, Tests & Radiations

6 Previous campaign Results Focus on STM diode result Two different failure signature were observed during the first GANIL campaign. Current step was the most common. Ir degradation with fluence was only observed in some of the new prototypes. 6 TRAD, Tests & Radiations

7 Parts information 1/2 Reference Diode Type SiC Manufacturer Package VRRM (V) Number of sample STPS3045- XF54S02Y SMD 05 45V 10 STPS80H100 SMD 1 100V 10 STPS XZ04P029 SMD V 10 STTH60400 Ultrafast 8 STTH61W04CSA1 (equivalent STTH60400) Ultrafast STMicroelectronics SMD 1 400V 2 STPSC1006 yes TO V 13 STPS40M60CR TO V 15 STPSC10H065 yes TO V 11 STPS4045CW TO V 11 STPS5H100BY DPACK 100V 5 7 TRAD, Tests & Radiations

8 Parts information 2/2 Reference Diode Type SiC Manufacturer Package VRRM (V)* Number of sample 35CGQ100 TO V* 15 45CKQ LQ100 HFB25HJ20 Ultrafast International Rectifier TO-258 SMD-1 SMD.5 100V 100V* 200V CLQ150 SMD-1 150V* 11 SML10SIC06SMD5 yes SemeLAB Limited SMD.5 600V 6 MBRB8H100T4G BAS21LTG1 Fast Switching On Semiconductor D²PACK SOT23 100V 250V 6 5 1N6817 Microsemi ThinKey 2 100V* 9 SHDC124545P Sensitron Semiconductor TO V* 12 8 TRAD, Tests & Radiations

9 Test procedure and setup Irradiation performed at UCL PASS IR>IRMax IRMax FAIL PASS FAIL PIST (Post-Irradiation STress) Test : After the irradiation, a stress is applied to the diode in order to reveal any latent damage on the irradiated devices. 9 TRAD, Tests & Radiations

10 Test procedure and setup STATUS CRITERIA SEB / Fail: abrupt leak of Ir during irradiation Ir > IR (@VRRM) PIST: abrupt leak of Ir during stress test Ir > IR (@VRRM) 10 TRAD, Tests & Radiations

11 SEE tests: Beam description Irradiation facility: U.C.L. Heavy Ions used : IRRADIATION BEAM CHARACTERISTICS Ions used: 124 Xe 35+ (62.5 MeV.cm²/mg), 83 Kr 25+ (LET=32.4MeV.cm²/mg), 53 Cr 16+ (LET=16MeV.cm²/mg), 27 Al 8+ (LET=5.7MeV.cm²/mg ) Fluence: cm -2 (in two steps and cm -2 ) for Si Fluence: cm -2 for silicon carbide diode 11 TRAD, Tests & Radiations

12 STMicroeletronics International Rectifier On semi Results The derated accepted is 75% of Xe (LET=62.5MeV.cm²/mg) Kr (LET=32.4MeV.cm²/mg) Cr (LET=16MeV.cm²/mg) Al (LET=5.7MeV.cm²/mg ) Ok PIST Fail Ok PIST Fail Ok PIST Fail Ok PIST Fail STTH % STPS % STPS4045CW 56% 75% STPS % 75% 100% 75% STPS40M60CR 50% 75% 75% STPS80H100 75% STPS5H100BY 75% 75% 75% STPSC10H065* 57% 93% 66% 100% 100% STPSC1006* 50% 86% 69% 93% 93% 100% 45CKQ % 35CGQ % HFB25HJ20 75% 100% 120LQ100 75% 100% 80CLQ150 75% 100% BAS21LTG1 100% MBRB8H100T4G 75% 100% Semelab SML10SIC06SMD5* 29% 58% 33% 50% 42% diodes inc. 1N4148WQ 100% Microsemi 1N % Sensitron SHDC124545P 100% * Silicone carbide diode Fail : IR > VRRM PASS: IR < VRRM Number XX% : Value of the % of VRMAX 12 TRAD, Tests & Radiations

13 Results Xe (LET=62.5MeV.cm²/mg) Kr (LET=32.4MeV.cm²/mg) Cr (LET=16MeV.cm²/mg) Al (LET=5.7MeV.cm²/mg ) Ok PIST Fail Ok PIST Fail Ok PIST Fail Ok PIST Fail STTH % STPS % STPS4045CW 56% 75% STPS % 75% 100% 75% STPS40M60CR 50% 75% 75% STPS80H100 75% STPS5H100BY 75% 75% 75% STPSC10H065* PART could 57% be FAIL 93% 66% but 100% t 100% STPSC1006* 50% 86% 69% 93% 93% 100% 45CKQ % 35CGQ100 necessary 100% t functional HFB25HJ20 75% 100% 120LQ100 75% 100% 80CLQ150 75% 100% On semi BAS21LTG1 100% MBRB8H100T4G 75% 100% Semelab SML10SIC06SMD5* 29% 58% 33% 50% 42% diodes inc. 1N4148WQ 100% Microsemi 1N % Sensitron SHDC124545P 100% STMicroeletronics International Rectifier * Silicone carbide diode Fail : IR > VRRM PASS: IR < VRRM 13 TRAD, Tests & Radiations

14 STMicroeletronics STMicroelectronics Results Xe (LET=62.5MeV.cm²/mg) Kr (LET=32.4MeV.cm²/mg) Cr (LET=16MeV.cm²/mg) Al (LET=5.7MeV.cm²/mg ) Ok PIST Fail Ok PIST Fail Ok PIST Fail Ok PIST Fail STTH % STPS % STPS4045CW 56% 75% STPS % 75% 100% 75% STPS40M60CR 50% 75% 75% STPS80H100 75% STPS5H100BY 75% 75% 75% STPSC10H065* 57% 93% 66% 100% 100% STPSC1006* 50% 86% 69% 93% 93% 100% * Silicone carbide diode 2 references Fail after a PIST due to a degradation of the leakage current (for the example IRmax respectively equal to 3.5µA and 20µA) POST-PIST Test - Run No STPS5H100BY-TR No. 2 - up to +100V 200.0u 180.0u 160.0u 140.0u 120.0u 100.0u 80.0u 60.0u 40.0u 20.0u u VR (V) VR=0V to 100V VR=100V to 0V u 50.0u 40.0u 30.0u 20.0u 10.0u 0.0 POST-PIST Test - Run No STPS30170 No up to +170V -10.0u VR (V) VR=0V to 170V VR=170V to 0V TRAD, Tests & Radiations

15 STMicroeletronics STMicroelectronics Results Xe (LET=62.5MeV.cm²/mg) Kr (LET=32.4MeV.cm²/mg) Cr (LET=16MeV.cm²/mg) Al (LET=5.7MeV.cm²/mg ) Ok PIST Fail Ok PIST Fail Ok PIST Fail Ok PIST Fail STTH % STPS % STPS4045CW 56% 75% STPS % 75% 100% 75% STPS40M60CR 50% 75% 75% STPS80H100 75% STPS5H100BY 75% 75% 75% STPSC10H065* 57% 93% 66% 100% 100% STPSC1006* 50% 86% 69% 93% 93% 100% * Silicone carbide diode 2 references Fail after a PIST due to a degradation of the leakage current (for the example IRmax respectively equal to 3.5µA and 20µA) 200.0u 180.0u 160.0u 140.0u 120.0u 100.0u POST-PIST Test - Run No STPS5H100BY-TR No. 2 - up to +100V 80.0u 60.0u 40.0u 20.0u u VR (V) VR=0V to 100V VR=100V to 0V IRmax = 3.5µA u 50.0u Parts still functional but out of criteria functional 40.0u but 30.0u 20.0u 10.0u 0.0 POST-PIST Test - Run No STPS30170 No up to +170V -10.0u VR (V) VR=0V to 170V VR=170V to 0V IRmax = 20µA TRAD, Tests & Radiations

16 Results STMicroeletronics International Rectifier On semi Xe (LET=62.5MeV.cm²/mg) Kr (LET=32.4MeV.cm²/mg) Cr (LET=16MeV.cm²/mg) Al (LET=5.7MeV.cm²/mg ) Ok PIST Fail Ok PIST Fail Ok PIST Fail Ok PIST Fail STTH % STPS % STPS4045CW 56% 75% STPS % 75% 100% 75% STPS40M60CR 50% 75% 75% STPS80H100 75% STPS5H100BY 75% 75% 75% STPSC10H065* 57% 93% 66% 100% 100% STPSC1006* 50% 86% 69% 93% 93% 100% 45CKQ % 35CGQ % HFB25HJ20 75% 100% 120LQ100 75% 100% 80CLQ150 75% 100% BAS21LTG1 100% MBRB8H100T4G 75% 100% Semelab SML10SIC06SMD5* 29% 58% 33% 50% 42% diodes inc. 1N4148WQ 100% Microsemi 1N % Sensitron SHDC124545P 100% * Silicone carbide diode 16 TRAD, Tests & Radiations

17 E-5 8E-5 7E-5 6E-5 5E-5 4E-5 3E-5 2E-5 1E-5 6.5E-5 6E-5 5.5E-5 5E-5 4.5E-5 4E-5 3.5E-5 3E-5 2.5E-5 2E-5 1.5E-5 1E-5 5E-6 Internal Rectifier Results Focus on IR diode result Run No CGQ100 - Part No VR=100.0V Beam OFF - Beam ON Run No CLQ150 - Part No. 4 - VR=112.5V Beam OFF - Beam ON E-5 6.5E-5 6E-5 5.5E-5 5E-5 4.5E-5 4E-5 3.5E-5 3E-5 2.5E-5 2E-5 1.5E-5 Run No LQ100 - Part No. 1 - VR=100.0V 1E Beam OFF - Beam ON Run No CKQ100 - Part No. 5 - VR=100.0V 3.6E-5 3.4E-5 3.2E-5 3E-5 2.8E-5 2.6E-5 2.4E-5 2.2E-5 2E-5 1.8E-5 1.6E-5 1.4E-5 1.2E-5 1E-5 8E Beam OFF - Beam ON 17 TRAD, Tests & Radiations 600

18 Results Focus on IR diode result Run No CGQ100 - Part No VR=100.0V Run No LQ100 - Part No. 1 - VR=100.0V E E E-5 9E-5 5.5E-5 8E-5 5E-5 7E-5 4.5E-5 6E-5 4E-5 5E-5 3.5E-5 4E-5 3E-5 3E-5 2.5E-5 2E-5 2E-5 1E-5 PARTS 1.5E-5 are still functional 0 1E Beam OFF - Beam ON - Beam OFF - Beam ON 6.5E-5 6E-5 5.5E-5 5E-5 4.5E-5 4E-5 3.5E-5 3E-5 2.5E-5 2E-5 1.5E-5 1E-5 5E-6 Run No CLQ150 - Part No. 4 - VR=112.5V Beam OFF - Beam ON 650 Run No CKQ100 - Part No. 5 - VR=100.0V 3.6E-5 3.4E-5 3.2E-5 3E-5 2.8E-5 2.6E-5 2.4E-5 2.2E-5 2E-5 1.8E-5 1.6E-5 1.4E-5 1.2E-5 1E-5 8E Beam OFF - Beam ON 18 TRAD, Tests & Radiations 600

19 Results STMicroeletronics International Rectifier On semi Xe (LET=62.5MeV.cm²/mg) Kr (LET=32.4MeV.cm²/mg) Cr (LET=16MeV.cm²/mg) Al (LET=5.7MeV.cm²/mg ) Ok PIST Fail Ok PIST Fail Ok PIST Fail Ok PIST Fail STTH % STPS % STPS4045CW 56% 75% STPS % 75% 100% 75% STPS40M60CR 50% 75% 75% STPS80H100 75% STPS5H100BY 75% 75% 75% STPSC10H065* 57% 93% 66% 100% 100% STPSC1006* 50% 86% 69% 93% 93% 100% 45CKQ % 35CGQ % HFB25HJ20 75% 100% 120LQ100 75% 100% 80CLQ150 75% 100% BAS21LTG1 100% MBRB8H100T4G 75% 100% Semelab SML10SIC06SMD5* 29% 58% 33% 50% 42% diodes inc. 1N4148WQ 100% Microsemi 1N % Sensitron SHDC124545P 100% * Silicone carbide diode : No information on literature about the sensitivity of SiC diode SiC diodes are most sensitive to destructive event 19 TRAD, Tests & Radiations

20 Results 5.5E-7 5E-7 4.5E-7 4E-7 3.5E-7 3E-7 2.5E-7 2E-7 1.5E-7 1E-7 5E-8 0 Focus on SiC diode result Run No STPSC Part No. 7 - VR=275.0V Beam OFF - Beam ON Degradation by step was also observed 20 TRAD, Tests & Radiations

21 Results Focus on SiC diode result Run No SML10SIC06SMD5 - Part No. 5 - VR=450.0V Beam OFF - Beam ON Abrupt degradation of the leakage current has been observed too TRAD, Tests & Radiations

22 Results E-5 8E-5 7E-5 Focus on SiC diode result Run No SML10SIC06SMD5 - Part No. 1 - VR=300.0V Beam OFF - Beam ON Increase of leakage current is directly proportional to the fluence and flux 44 These signatures were observed for the 3 references of SiC diode. 22 TRAD, Tests & Radiations

23 CONCLUSION 11 of the 20 references tested are degraded due to heavy ions irradiation SiC diode techlogy is more sensitive than Si diode techlogy More investigation on SiC diode have to be performed in order to understand the different phemen observed 23 TRAD, Tests & Radiations

24 TRAD Thank you for your attention, any question??? TRAD Gamma irradiation facility GAMRAY is accredited in compliance with ISO/IEC standard under n for gamma irradiation, dose deposit. TRAD, Tests & Radiations

25 Results E-5 8E-5 Focus on SiC diode result Run No SML10SIC06SMD5 - Part No. 1 - VR=300.0V 7E Beam OFF - Beam ON 5.5E-7 5E-7 4.5E-7 4E-7 3.5E-7 3E-7 2.5E-7 2E-7 1.5E-7 1E-7 5E-8 Run No STPSC Part No. 7 - VR=275.0V Beam OFF - Beam ON Run No STPSC10H065 - Part No. 2 - VR=350.0V Beam OFF - Beam ON 34 This increase of leakage current is directly proportional to the fluence and flux Signatures observed on the 3 SiC reference 25 TRAD, Tests & Radiations