AH125 ½ W High Linearity InGaP HBT Amplifier

Transcription

1 Product Overview The is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance across a broad range with +45 dbm OIP3 and +28 dbm of compressed 1dB power while drawing 15 ma current. The is available in a lead-free/green/rohs-compliant SOT-89 package. All devices are 1% RF and DC tested. The is targeted for use as a driver amplifier in wireless infrastructure where high linearity, medium power, and high efficiency are required. Internal biasing allows the to maintain high linearity over temperature and operate directly off a single +5V supply. This combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base stations or repeaters. Product Features 3-pin SOT-89 Package 4 36 MHz +28 dbm P1dB +45 dbm Output IP db 214 MHz 15 ma current draw +5 V Single Supply MTTF > 1 Years Lead-free/Green/RoHS-compliant SOT-89 Package Class 2 HBM ESD rating (>2kV) Functional Block Diagram GND 4 Applications Repeaters Mobile Infrastructure LTE / WCDMA / EDGE / CDMA RF IN GND RF OUT Ordering Information Part No. Description -89G ½W High Linearity Amplifier Standard T/R size = 1 pieces on a 7 reel. Data Sheet, January 9, 218 Subject to change without notice 1 of 15

2 Absolute Maximum Ratings Parameter Rating Storage Temperature 65 to 15 C RF Input Power, CW, 5Ω, T=25 C Device Voltage Input P1dB +6 V Operation of this device outside the parameter ranges given above may cause permanent damage. Recommended Operating Conditions Parameter Min Typ Max Units Case Temperature C Tj for >1 6 hours MTTF +2 C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Parameter Conditions Min Typ Max Units Operational Frequency Range 4 36 MHz Test Frequency 214 MHz Gain db Input Return Loss 12 db Output Return Loss 12 db W-CDMA Channel Power At -5dBc ACLR, Note dbm Output P1dB +28 dbm Output IP3 Pout=+12 dbm/tone, Δf=1 MHz dbm Noise Figure 4.4 db Quiescent Collector Current ma Thermal Resistance, θjc Junction to case 64.3 C / W Performance Summary Table Parameter Conditions Typical Units Frequency MHz Gain db Input Return Loss db Output Return Loss db W-CDMA Channel Power At -5 dbc ACLR, Note dbm Output P1dB dbm Output IP3 Note dbm Noise Figure db 1. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 1.3 db at.1% Probability, 3.84 MHz. 2. OIP3 is measured with two tones separated by 1 MHz. Measured at Pout=+17dBm/tone for 9 MHz, +14 dbm/tone for 196 MHz, and +12 dbm/tone for 214 MHz. Data Sheet, January 9, 218 Subject to change without notice 2 of 15

3 Device Characterization Data Note: The gain for the unmatched device in 5 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. S-Parameters Test Conditions: VDEVICE=+5 V, ICQ=15 ma, T=+25 C, unmatched 5 ohm system Freq (MHz) S11 (db) S11 (ang) S21 (db) S21 (ang) S12 (db) S12 (ang) S22 (db) S22 (ang) Data Sheet, January 9, 218 Subject to change without notice 3 of 15

4 MHz Application Circuit C1 C1 R1 L1 C8 C3 R4 R2 C9 C2 1. The primary RF microstrip line is Components shown on the silkscreen but not on the schematic are not used. 3. jumpers can be replaced with copper trace in target application. 4. The edge of R2 is placed at 28 mil from RFout pin. (14.3 o at 92 MHz) 5. The edge of C9 is placed 35 mil from the edge of R2. (1.8 o at 92 MHz) 6. The edge of R1 is placed at 1 mil from RFin pin. (5.1 o at 92 MHz) 7. The edge of C1 is placed 13 mil from the edge of R1. (6.6 o at 92 MHz) Typical Performance MHz Frequency Conditions MHz Gain db Input Return Loss db Output Return Loss db ACLR Pout = +18 dbm, Note dbc Output P1dB dbm Output IP3 Pout=+17 dbm/tone, Δf=1 MHz dbm Noise Figure db 1. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 1.3 db at.1% Probability, 3.84 MHz. Data Sheet, January 9, 218 Subject to change without notice 4 of 15

5 NF (db) Icq (ma) P1dB (dbm) OIP3 (dbm) OIP3 (dbm) OIP3 (dbm) S21 (db) ACLR (dbc) ACLR (dbc) S21 (db) S11 (db) S22 (db) Performance Plots MHz 22 Gain vs. Frequency Input Return Loss vs. Frequency Output Return Loss vs. Frequency Gain vs. Temperature ACLR vs. Output Power over Frequency W-CDMA 3GPP Test Model 1+64 DPCH PAR = 1.2 Probability 3.84 MHz BW ACLR vs. Output Power over Temperature W-CDMA 3GPP Test Model 1+64 DPCH PAR = 1.2 Probability 3.84 MHz BW Freq.=92 MHz MHz 92 MHz 96 MHz Temperature ( C) MHz 92 MHz 96 MHz OIP3 vs. Pout/Tone over Temperature Freq.=92 MHz 55 5 OIP3 vs. Pout/Tone over Frequency 55 5 Pout=+17dBm per tone OIP3 vs. Frequency Output Power per Tone (dbm) 869 MHz 92 MHz 96 MHz Output Power per Tone (dbm) Current vs. Output Power 3 P1dB vs. Frequency 3 Output Power vs. Input Power MHz 92 MHz 96 MHz MHz 92 MHz 96 MHz Input Power (dbm) 1. Noise Figure vs. Frequency Data Sheet, January 9, 218 Subject to change without notice 5 of 15

6 MHz Application Circuit C1 Trace Cut C2 R2 R1 C1 L1 C8 C4 C3 R4 C9 R2 C2 1. The primary RF microstrip line is Components shown on the silkscreen but not on the schematic are not used. 3. jumpers can be replaced with copper trace in target application. 4. The edge of C9 is placed at 25 mil from RFout pin. (25.5 o at 1845 MHz) 5. The edge of R1 is placed against the edge of C1. 6. The edge of C1 is placed at 3 mil from RFin pin. (3.1 o at 1845 MHz) 1.1 pf 2.4 pf Typical Performance MHz Frequency Conditions MHz Gain db Input Return Loss db Output Return Loss db ACLR Pout = +18 dbm, Note dbc Output P1dB dbm Output IP3 Pout=+14 dbm/tone, Δf=1 MHz dbm 1. W-CDMA 3GPP Test Model 1+64 DPCH, PAR = 1.3 db at.1% Probability, 3.84 MHz. Data Sheet, January 9, 218 Subject to change without notice 6 of 15

7 OIP3 (dbm) P1dB (dbm) S21 (db) Return Loss (db) ACLR (dbc) Performance Plots MHz Gain vs. Frequency Return Loss vs. Frequency -25 S11 S ACLR vs. Output Power W-CDMA 3GPP TM +64DPCH probability 3.84 MHz BW 185 MHz 1842 MHz 188 MHz OIP3 vs. Output Power per Tone 3 P1dB vs. Frequency MHz 1842 MHz 188 MHz Output Power/Tone (dbm) Data Sheet, January 9, 218 Subject to change without notice 7 of 15

8 MHz Application Circuit C1 R1 C1 C8 C4 C3 L1 C9 R4 R2 C2 1. The primary RF microstrip line is Components shown on the silkscreen but not on the schematic are not used. 3. jumpers can be replaced with copper trace in target application. 4. The edge of C9 is placed at 12 mils from RFout pin. (14.2 o at 214 MHz) 5. The edge of C2 is placed at 28 mils from the edge of C9. (33.2 o at 214 MHz) 6. The edge of C1 is placed at 6 mils from RFin pin. (7.1 o at 214 MHz) 7. The edge of R1 is placed 1 mils from the edge of C1. (1.2 o at 214 MHz) Typical Performance MHz Frequency Conditions MHz Gain db Input Return Loss db Output Return Loss db ACLR Pout = +18 dbm dbc Output P1dB dbm Output IP3 Pout=+12 dbm/tone, Δf=1 MHz dbm Noise Figure db 1. TD-SCDMA 3 Carrier, PAR = 1 Probability, 1.28 MHz BW Data Sheet, January 9, 218 Subject to change without notice 8 of 15

9 OIP3 (dbm) P1dB (dbm) NF (db) S21 (db) ACLR (dbc) ACLR (dbc) S21 (db) S11 (db) S22 (db) Performance Plots MHz 18 Gain vs. Frequency Input Return Loss Output Return Loss Frequency (GHz) Frequency (GHz) Frequency (GHz) Gain vs. Temperature ACLR vs. Output Power W-CDMA 3GPP Test Model 1+64 DPCH PAR = 1.3 Probability 3.84 MHz BW ACLR vs. Output Power W-CDMA 3GPP Test Model 1+64 DPCH PAR = 1.3 Probability 3.84 MHz BW MHz 214 MHz 217 MHz Temperature ( C) MHz 214 MHz 217 MHz OIP3 vs. Output Power/Tone 211 MHz 214 MHz 217 MHz Pout/Tone (dbm) P1dB vs. Frequency Frequency (GHz) Noise Figure vs. Frequency Frequency (GHz) Data Sheet, January 9, 218 Subject to change without notice 9 of 15

10 25-27 MHz Application Circuit C1 R1 C1 C9 L1 C8 C4 C3 R4 R2 C2 1. The primary RF microstrip line is Components shown on the silkscreen but not on the schematic are not used. 3. jumpers can be replaced with copper trace in target application. 4. Distance from side edge of C1 to side edge of U1 pin 1 is 55 mils (7.9 at 26 MHz). 5. Distance from end edge of R1 to side edge of U1 pin 1 is 11 mils (15.8 at 26 MHz). 6. Distance from side edge of C9 to side edge of U1 pin 3 is 9 mils (13. at 26 MHz). VCC R4 Ohms C3 22pF C4 1pF C8 1uF RF Input J1 C1 Ohms Z= 5 Ohm L=55 mils Z= 5 Ohm L=55 mils Z= 5 Ohm L=9 mils R1 R2 R1 1 3 U1 1pF 2 Ohms 22pF C1 C9.8pF.6pF L1 18nH 85CS RF Output J2-89PCB26 Typical Performance MHz Frequency Conditions MHz Gain db Input Return Loss db Output Return Loss db EVM Pout = +19 dbm % Output P1dB dbm Output IP3 Pout=+16 dbm/tone, Δf=1 MHz dbm O-FDMA, 64QAM-1/2, 124-FFT, 2 symbols and 3 sub-channels, 5 MHz Carrier BW. Data Sheet, January 9, 218 Subject to change without notice 1 of 15

11 EVM (%) OIP3 (dbm) Gain (db) Return Loss (db) EVM (%) Performance Plots MHz Gain vs. Frequency -5 Return Loss vs. Frequency 5 4 EVM vs. Output Power O-FDMA, 64QAM-1/2 124-FFT, 2 symbols and 3 subchannels 5 MHz Carrier BW Frequency (GHz) S11 S Frequency (GHz) GHz 2.6 GHz 2.7 GHz EVM vs. Output Power O-FDMA, 64QAM-1/2 124-FFT, 2 symbols and 3 subchannels 5 MHz Carrier BW 55 5 OIP3 vs. Output Power/Tone GHz 2.6 GHz 2.7 GHz GHz 2.6 GHz 2.7 GHz Output Power/Tone (dbm) Data Sheet, January 9, 218 Subject to change without notice 11 of 15

12 Pin Configuration and Description GND RF IN GND RF OUT Pin No. Symbol Description 1 RF IN RF Input. Requires external match for optimal performance. External DC Block required. 2, 4 GND RF/DC Ground Connection 3 RFout / Vcc RF Output. Requires external match for optimal performance. External DC Block and supply voltage is required. Evaluation Board PCB Information Qorvo PCB Material and Stack-up.14".62" ±.6" Finished Board Thickness.14" Nelco N-4-13 ε r =3.7 typ. Core Nelco N oz. Cu top layer 1 oz. Cu inner layer 1 oz. Cu inner layer 1 oz. Cu bottom layer 5 Ohm Lines: Width=28 mils Spacing=28 mils Data Sheet, January 9, 218 Subject to change without notice 12 of 15

13 Package Marking and Dimensions Package Marking Product ID: G Lot code: YXXX 1. All dimensions are in millimeters. Angles are in degrees. 2. Dimension and tolerance formats conform to ASME Y14.4M The terminal #1 identifier and terminal numbering conform to JESD 95-1 SPP Contact plating: NiPdAu PCB Mounting Pattern 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a.35mm (#8 /.135 ) diameter drill and have a final plated thru diameter of.25 mm (.1 ). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. RF trace width depends upon the PC board material and construction. 4. Use 1 oz. Copper minimum. 5. All dimensions are in millimeters (inches). Angles are in degrees. Data Sheet, January 9, 218 Subject to change without notice 13 of 15

14 Product Compliance Information ESD Sensitivity Ratings Caution! ESD-Sensitive Device ESD Rating: Class 2 Value: 2V to <4V Test: Human Body Model (HBM) Standard: JEDEC Standard JS ESD Rating: Class C3 Value: Passes 2V min Test: Charged Device Model (CDM) Standard: JEDEC Standard JESD22-C11 MSL Rating MSL Rating: 3 or better Test: +26 C convection reflow Standard: JEDEC standard IPC/JEDEC J-STD-2 Solderability Compatible with both lead-free (maximum 26 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes. Package lead plating: NiPdAu or Matte Tin RoHs Compliance This part is compliant with EU 22/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br42) Free PFOS Free SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Tel: Web: customer.support@qorvo.com For technical questions and application information: appsupport@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 218 Qorvo, Inc. Qorvo is a registered trademark of Qorvo, Inc. Data Sheet, January 9, 218 Subject to change without notice 14 of 15

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