Keysight 1GC DC GHz Packaged Biasable Integrated Diode Limited

Transcription

1 Keysight 1GC DC GHz Packaged Biasable Integrated Diode Limited Data Sheet Features RoHS compliant DC to 20 GHz limiter, useable to 26 GHz Can be biased for adjustable limit level Low distortion

2 02 Keysight 1GC DC GHz Packaged Biasable Integrated Diode Limited - Data Sheet Description The 1GC is a 26.5 GHz integrated diode limiter that can be used to protect sensitive RF circuits from excess RF power, DC transients, and ESD. The 1GC can be used as an unbiased 23 dbm passive limiter; it also provides adjustable limiting and peak power detection capabilities. The 1GC is fabricated using Keysight Technologies, Inc. GaAs HBT process. Package type: QFN Package dimensions: 3 x 3 mm (0.118 x in) Package thickness: 0.9 ±0.1 mm (35.4 ±3.9 mils) Lead pitch: 0.5 mm (19.7 mils) Lead width: 0.2 mm (7.9 mils) Absolute maximum ratings 1 2 Symbol Parameters/conditions Min Max Units Continuous incident power at RL at RF OUT > 10 db 30 dbm P in RF IN RL at RF IN = 10 db RL at RF OUT > 15 db 33 dbm Continuous incident power at RL at RF OUT > 10 db 25 dbm RF OUT RF at RF IN = 0 db RL at RF OUT > 15 db 28 dbm Bias on anode pin 15 0 dbm V cathode Bias on cathode pin 0 15 V I in DC current into RF IN or RF OUT pin 288 V T bs Maximum package backside temperature 85 ma T j Diode junction temperature 170 C T max Maximum solder reflow temperature (max 3 30 sec./cycle) 260 C T stg Storage temperature C 1. Parameters specified for continuous operation at T bs < 70 C. Continuous operation in excess of any one of these conditions may result in performance and/or reliability degradation to this component. 2. Operation in excess of any one of these conditionsfor > 100 ms may result in permanent damage to this component.

3 03 Keysight 1GC DC GHz Packaged Biasable Integrated Diode Limited - Data Sheet DC specifications/physical properties 1 Symbol Parameters/conditions Min Typ Max Units V fwd Diode forward voltage at 1.0 ma, Anode or cathode pads to RF IN V R fwd Incremental diode series resistance at 30 ma, anode or cathode 8 Ω I rev_anode Reverse current in bias network, anode pad to RF IN 2, ma I rev_cathode Reverse current in bias network, cathode pad to RF IN 2, ma R series Through series resistance (RF IN to RF OUT ) Ω R sense Sense resistor k Ω V DCOFFSET DC offset on RF IN and RF OUT pins (V Anode = 15 V and V Cathode = 15 V) mv 1. Parameters specified at T A = 25 C, except for temperature specs., All current polarities positive into MMIC. 2. With +15 V bias on C1 and C2 package pins and 15 V bias on A1 and A2 package pins. 3. As measured on C1 and A1 package pins. Note: ±100 μa max on C2 and A2 package pins respectively. 4. For externally applied DC offsets of > ±100 mv, must use DC blocking capacitors on RF IN and RF OUT. RF specifications 1 Symbol Parameters/conditions Min. Typ. Max. Units S 11, S 22 S 21, S 12 P 1 db Reflection Through gain 1 db gain compression 3 GHz GHz GHz GHz GHz GHz 2.7 = 0V, V cathode = 0 V 23 = 10 V, V cathode = 10 V 32 Variable Bias Voltage variable SHI Second harmonic intercept = V cathode = 0 V 84 f o = 10 GHz = 10 V, V cathode = 10 V 101 THI Third harmonic intercept = V cathode = 0 V 36 f o = 10 GHz = 10 V, V cathode = 10 V 52 = 0 V, V cathode = 0 V TOI Third harmonic intercept = 6.5 V, V cathode = 0 V 47 f o = 10 GHz, f = 100 khz = 10 V, V cathode = 10 V 50 = 15 V, V cathode = 15 V Parameters specified at T A = 25 C, except for temperature specs., All current polarities positive into MMIC. db db dbm dbm dbm dbm ESD specifications 1 Symbol Parameters/conditions Min. Typ. Max. Units RF IN and RF OUT pins, anode & 15,000 cathode grounded ESD ESD no damage level Any pin with all other pins open 500 Any pin with another pins shorted 200 to ground 1. Using human body model as ESD generator. Circuit equivalent is 100 pf, 1500 Ω. V

4 04 Keysight 1GC DC GHz Packaged Biasable Integrated Diode Limited - Data Sheet N/C 1 C1 C2 N/C 1 GND 1 12 GND RF_IN 2 11 RF_ GND 3 10 GND N/C N/C 1 SENSE A1 A2 N/C GND 2 die paddle C1-3 C4-6 10k A1-3 A4-6 Figure 2. 1GC pins outs Cathode 'C' bias pads C1 C2 C3 C4 C5 C6 RF in RF out 10 kohm Sense A1 A2 A3 A4 A5 A6 Anode 'A' bias pads Figure 2. 1GC functional topology

5 05 Keysight 1GC DC GHz Packaged Biasable Integrated Diode Limited - Data Sheet Applications The 1GC can be used as a protection circuit for ESD and DC transients, as a Reverse Power Protection (RPP) device, or as an adjustable RF limiter. Typical applications include receiver and source protection from overpower and ESD. RF Out is connected to the device that needs protection. Bias and Operation can be biased from 0 V to 15 V and V cathode can be biased from 0 V to +15 V. Typically the magnitude of these two biases are made equal so that the DC voltage on the RF IN and RF OUT pads is 0 V. A typical assembly drawing is shown in Figure 10 with caps mounted close to the chip for the bias lines. It is important that the bias lines provide a low impedance to ground close to the chip for maximum ESD protection. Top view Bottom view Side view Figure 3. 1GC dimension drawing

6 06 Keysight 1GC DC GHz Packaged Biasable Integrated Diode Limited - Data Sheet Tape and Reel The component is available in tape and reel format. See Figures 5. Moisture Compatibility Injection mold components are moisture-sensitive. The product is tested to the Moisture and Reflow Sensitivity Level 3 as per IPC/Jedec J-STD-020 and must be mounted within 168 hours of opening the shipping container. Store and handle parts for refl ow and for rework per IPC/Jedec J-STD-033B. See Figure 4. RoHS Compliance This device is RoHS Compliant. This means the component meets the requirements of the European Parliament and the Council of the European Union Restriction of Hazardous Substances Directive 2011/65/EU, commonly known as RoHS. The six regulated substances are lead, mercury, cadmium, chromium VI (hexavalent), polybrominated biphenyls (PBB) and polybrominated biphenyl ethers (PBDE). RoHS compliance implies that any residual concentration of these substances is below the RoHS Directive s maximum concentration values (MVC); being less than 1000 ppm by weight for all substances except for cadmium which is less than 100 ppm by weight. Assembly Techniques The QFN SMT package is compatible with industry standard solderreflow attach processes. The GaAs MMICs incorporated in this SMT package solution is ESD sensitive. ESD preventive measures must be employed in all aspects of storage, handling, and assembly. Figure 4. 1GC tape and reel, moisture containment pouch label

7 07 Keysight 1GC DC GHz Packaged Biasable Integrated Diode Limited - Data Sheet Figure 5. 1GC tape and reel configuration Supplemental data 0 1 S21 (db) Frequency (GHz)) Figure 6. S21 graph

8 08 Keysight 1GC DC GHz Packaged Biasable Integrated Diode Limited - Data Sheet Supplemental data (continued) 0 10 Match (db) S22 S Frequency (GHz) Figure 7. S11 & S22 graph 15 V bias 2.14 GHz Pin (dbm) 6.5 V bias 2.14 GHz 0 V bias 2.14 GHz 3 V bias 2.14 GHz 10 V bias 2.14 GHz 15 V bias 2.14 GHz 0 V bias 10 GHz 3 V bias 10 GHz 6.5 V bias 10 GHz 10 V bias 10 GHz Figure 8. Gain vs pin vs bias (2.14 GHz and 10 GHz) nd harmonic (dbm) Power incident in (dbm) DUT1 0 V 2nd DUT1 3 V 2nd DUT1 6.5 V 2nd DUT1 10 V 2nd DUT1 15 V 2nd Thru 2nd Figure 9. 2nd harmonic vs pin vs ƒ 0 = 10 GHz

9 09 Keysight 1GC DC GHz Packaged Biasable Integrated Diode Limited - Data Sheet Supplemental data rd harmonic (dbm) DUT1 0 V 3rd DUT1 3 V 3rd DUT1 6.5 V 3rd DUT1 10 V 3rd DUT1 15 V 3rd Thru 3rd Vfw d (V) Figure 10. 3rd harmonic vs pin vs f 0 = 10 GHz 1.00E E - 01 Ifw d (A) 1.00E E C 70 C 1.00E Vfw d (V) Figure 11. I-V center conductor (RF in ) to anode or cathode bias

10 10 Keysight 1GC DC GHz Packaged Biasable Integrated Diode Limited - Data Sheet Evolving Our unique combination of hardware, software, support, and people can help you reach your next breakthrough. We are unlocking the future of technology. For more information on Keysight Technologies products, applications or services, please contact your local Keysight office. The complete list is available at: Americas Canada (877) Brazil Mexico United States (800) From Hewlett-Packard to Agilent to Keysight mykeysight A personalized view into the information most relevant to you. Keysight Services Keysight Services can help from acquisition to renewal across your instrument s lifecycle. Our comprehensive service offerings one-stop calibration, repair, asset management, technology refresh, consulting, training and more helps you improve product quality and lower costs. Keysight Channel Partners Get the best of both worlds: Keysight s measurement expertise and product breadth, combined with channel partner convenience. This data sheet contains a variety of typical and guaranteed performance data. The information supplied should not be interpreted as a complete list of circuit specifications. Customers considering the use of this, or other Keysight Technologies GaAs ICs, for their design should obtain the current production specifications from Keysight. In this data sheet the term typical refers to the 50th percentile performance. For additional information contact Keysight at MMIC_Helpline@keysight.com. The product described in this data sheet is RoHS Compliant and RoHS Process Compatible with a maximum temperature of 260 C and a maximum of 3 temperature cycles. Asia Pacific Australia China Hong Kong India Japan 0120 (421) 345 Korea Malaysia Singapore Taiwan Other AP Countries (65) Europe & Middle East Austria Belgium Finland France Germany Ireland Israel Italy Luxembourg Netherlands Russia Spain Sweden Switzerland Opt. 1 (DE) Opt. 2 (FR) Opt. 3 (IT) United Kingdom For other unlisted countries: (BP ) DEKRA Certified ISO9001 Quality Management System Keysight Technologies, Inc. DEKRA Certified ISO 9001:2015 Quality Management System This information is subject to change without notice. Keysight Technologies, 2016 Published in USA, October 1, EN