TGA2238-CP 8 11 GHz 50 W GaN Power Amplifier

Transcription

1 Applications X-band radar Data Links Product Features Frequency Range: 8 11 GHz P SAT : 47 PIN = 23 dbm PAE: PIN = 23 dbm Power Gain: 24 PIN = 23 dbm Small Signal Gain: >28 db Return Loss: > 9 db Bias:, V G = -2.6 V Typical (Pulsed V D: PW = 1 µs and DC = 1 %) Package Dimensions: 15.2 x 15.2 x 3.5 mm Package base is pure Cu offering superior thermal management Functional Block Diagram General Description TriQuint s is a packaged, high power X- band amplifier fabricated on TriQuint s.25 um GaN on SiC production process. Operating from 8 11 GHz, the achieves 5 W saturated output power with 24 db power gain and 34 % power-added efficiency. The is packaged in a 1-lead 15 x 15 mm bolt-down package with a Cu base for superior thermal management. Both RF ports (RF input internally DC blocked) are matched to 5 ohms allowing for simple system integration. The is ideally suited for both military and commercial x-band radar systems and data links. Pad Configuration Pad No. Symbol 1, 5 V G 2, 4, 7, 9 GND 3 RF In 6, 1 V D 8 RF Out Lead-free and RoHS compliant. Evaluation boards are available upon request. Ordering Information Part ECCN Description 3A1.b.2.b 8 11 GHz 5 W GaN Power Amplifier Preliminary Datasheet: Rev A of 13 - Disclaimer: Subject to change without notice

2 Absolute Maximum Ratings Parameter Drain Voltage (V D ) Gate Voltage Range (V G ) Drain Current (I D ) Gate Current (I G T CH = 2 C Power Dissipation (P DISS ), 85 C Value 4 V -8 to V 8 A -26 to 62 ma 158 W Input Power (P IN ), 5Ω, 85 C, VD = 28V, 3 dbm Input Power (P IN ), 85 C, VSWR 3:1, VD = 28V, Pulsed: PW = 1 µs, DC = 3 dbm 1% Channel Temperature (T CH ) 275 C Mounting Temperature (3 seconds) 26 C Storage Temperature -55 to 15 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Recommended Operating Conditions Parameter Drain Voltage (V D ): Pulsed Drain Current (I DQ ) Gate Voltage (V G ) Value 65 ma -2.6 V (Typ.) Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted:,, V G = -2.6 V Typical, Pulsed V D: PW = 1 µs, DC = 1 % Parameter Min Typical Max Units Operational Frequency Range 8 11 GHz Small Signal Gain >28 db Input Return Loss >9 db Output Return Loss >1 db Output Power (Pin = 23dBm) 47 dbm Power Added Efficiency (Pin = 23dBm) 34 % Power Gain (Pin = 23dBm) 24 db Small Signal Gain Temperature Coefficient -.56 db/ C Preliminary Datasheet: Rev A of 13 - Disclaimer: Subject to change without notice

3 P DISS (W) Median Lifetime, T M (Hours) Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θ JC ) (1).66 ºC/W VD =, IDQ = 65 ma, Channel Temperature (T CH ) (No RF drive) T base =, P DISS = 18.2 W 97 C Median Lifetime (T M ) 2. x 1^12 Hrs Thermal Resistance (θ JC ) (1) VD =, IDQ = 65 ma,.76 ºC/W Channel Temperature (T CH ) (Under RF drive) (Pulsed V D : PW = 1 µs, DC = 1 %), T base =, V D =, I D_Drive = 5.9 A, 167 C Median Lifetime (T M ) PIN = 25 dbm, POUT = 47.5dBm, P DISS = 18 W 2.89 x 1^9 Hrs Notes: 1. Thermal Resistance measured to back of package. Test Conditions: V D = 4 V; Failure Criteria = 1% reduction in I D_MAX 1E+18 1E+17 1E+16 1E+15 1E+14 1E+13 1E+12 1E+11 1E+1 1E+9 1E+8 1E+7 1E+6 1E+5 1E+4 Median Lifetime vs. Channel Temperature FET Channel Temperature, T CH ( C) T BASE = +85 C P DISS vs. Frequency vs. P IN P IN = 23 dbm P IN = 25 dbm Preliminary Datasheet: Rev A of 13 - Disclaimer: Subject to change without notice

4 PAE (%) PAE (%) Output Power (dbm) Output Power (dbm) Output power (dbm) Output Power (dbm) Typical Performance: Large Signal (Pulsed Operation) Output Power vs. Frequency vs. Voltage P IN = 23 dbm Output Power vs. Frequency vs. Temp. P IN = 23 dbm V 44 3 V 43 I 42 DQ = 65 ma C Output Power vs. Input Power vs. Freq Output Power vs. Frequency vs. P IN GHz 9 GHz 1 GHz 11 GHz Input Power (dbm) dbm 22 dbm 23 dbm 25 dbm 4 PAE vs. Frequency vs. Voltage P IN = 23 dbm 4 PAE vs. Frequency vs. Temp. P IN = 23 dbm V 3 V C 1 I DQ = 65 ma Preliminary Datasheet: Rev A of 13 - Disclaimer: Subject to change without notice

5 Drain Current (A) Gate Current (ma) Drain Current (A) Gate Current (A) PAE (%) PAE (%) Typical Performance: Large Signal (Pulsed Operation) 4 PAE vs. Input Power vs. Freq. 4 PAE vs. Frequency vs. P IN GHz 1 GHz 9 GHz 8 GHz dbm 22 dbm 23 dbm 25 dbm Input Power (dbm) Drain Current vs. Frequency vs. Voltage P IN = 23 dbm 25 V 3 V I DQ = 65 ma Gate Current vs. Frequency vs. Voltage P IN = 23 dbm 25 V 3 V I DQ = 65 ma Drain Current vs. Frequency vs. Temp. P IN = 23 dbm 1..8 Gate Current vs. Frequency vs. Temp. P IN = 23 dbm C C Preliminary Datasheet: Rev A of 13 - Disclaimer: Subject to change without notice

6 Power Gain (db) Power Gain (db) Drain Current (A) Gate Current (ma) Drain Current (A) Gate Current (ma) Typical Performance: Large Signal (Pulsed Operation) Drain Current vs. Input Power vs. Freq Gate Current vs. Input Power vs. Freq GHz 1 GHz 9 GHz 8 GHz Input Power (dbm) GHz 9 GHz 1 GHz 11 GHz Input Power (dbm) 7. Drain Current vs. Frequency vs. P IN.25 Gate Current vs. Frequency vs. P IN dbm 22 dbm 23 dbm 25 dbm dbm 22 dbm 23 dbm 25 dbm Power Gain vs. Frequency vs. P IN Power Gain vs. Input Power vs. Freq. 8 GHz 9 GHz 1 GHz 11 GHz dbm 22 dbm 23 dbm 25 dbm Input Power (dbm) Preliminary Datasheet: Rev A of 13 - Disclaimer: Subject to change without notice

7 2 nd Harmonic (dbc) 2 nd Harmonic (dbc) 2 nd Harmonic (dbc) 2 nd Harmonic (dbc) 2 nd Harmonic (dbc) Typical Performance: Large Signal (Pulsed Operation) -1 2 nd Harmonic vs. Frequency vs. Temp nd Harmonic vs. Frequency vs. Temp. -2 P IN = 1 dbm -2 P IN = 15 dbm C C nd Harmonic vs. Frequency vs. Temp nd Harmonic vs. Frequency vs. Temp. -2 P IN = 2 dbm -2 P IN = 25 dbm C C nd Harmonic vs. Frequency vs. P IN dbm 15 dbm 2 dbm 25 dbm Preliminary Datasheet: Rev A of 13 - Disclaimer: Subject to change without notice

8 S11 (db) S22 (db) S21 (db) S21 (db) S21 (db) Typical Performance: Small Signal (CW Operation) Gain vs. Frequency vs. V D Temp = Temp = Gain vs. Frequency vs. I DQ V 3 V ma 65 ma 22 2 I DQ = 65 ma 22 2 V D = 4 Gain vs. Frequency vs. Temp C -3 Input Return Loss vs. Frequency vs. Temp. -3 Output Return Loss vs. Freq. vs. Temp C C -3-3 Preliminary Datasheet: Rev A of 13 - Disclaimer: Subject to change without notice

9 S11 (db) S22 (db) S11 (db) S22 (db) Typical Performance: Small Signal (CW Operation) -3 Input Return Loss vs. Frequency vs. V D Temp = -3 Output Return Loss vs. Frequency vs. V D Temp = I DQ = 65 ma V 3 V I DQ = 65 ma V 3 V -3 Input Return Loss vs. Frequency vs. I DQ Temp = -3 Output Return Loss vs. Frequency vs. I DQ Temp = V D = ma 65 ma V D = ma 65 ma Preliminary Datasheet: Rev A of 13 - Disclaimer: Subject to change without notice

10 Application Circuit C5 1 uf C3.1 uf C1.1 uf C7.1 uf C9.1 uf R3 5.1 Ohms R1 1 Ohms VG RFIN RFOUT VD (Note 1) (Note 2) R4 5.1 Ohms C6 1 uf C4.1 uf R2 1 Ohms C2.1 uf C8.1 uf C1.1 uf Notes: 1. V G must be biased from both sides (Pins 1 and 5) 2. V D must be biased from both sides (Pins 6 and 1) Bias-up Procedure 1. Set power supply: I D limit to 7 A, I G limit to 2 ma 2. Apply -5. V to V G (for pinch-off) 3. Increase V D to +; Ensure I DQ is approx. ma 4. Adjust V G more positive until I DQ = 65 ma V G ~ -2.6 V typical 5. Apply RF signal Bias-down Procedure 1. Turn off RF signal 2. Reduce V G to 5. V; Ensure I DQ ~ ma 3. Reduce V D to V 4. Turn off V D supply 5. Turn off V G supply Pin Description Pin No. Symbol Description 1,5 V G Gate Voltage; Bias network is required; must be biased from both sides; see recommended Application Information above. 3 RF IN Input; matched to 5 Ω; DC blocked 2,4,7,9 GND Must be grounded on the PCB. 6,1 V D Drain voltage; Bias network is required; must be biased from both sides; see recommended Application Information above. 8 RF OUT Output; matched to 5 Ω; DC shorted to ground. Preliminary Datasheet: Rev A of 13 - Disclaimer: Subject to change without notice

11 Evaluation Board Layout Notes: Both Top and Bottom VD and VG must be biased. Bill of Material Reference Des. Value Description Manuf. Part Number C1, C2, C7, C8.1 μf Cap, 42, 5 V, 1%, X7R Various C3, C4, C9, C1.1 μf Cap, 42, 5 V, 1%, X7R Various C5, C6 1 μf Cap, 126, 5 V, 2%, X5R Various R1, R2 1 Ohm Res, 42, 5%, SMD Various R3, R4 5.1 Ohm Res, 42, 5%, ROHS Various R5, R6 Ohm Res, 42, SMD, jumpers required for the above EVB Various Preliminary Datasheet: Rev A of 13 - Disclaimer: Subject to change without notice

12 Assembly Notes 1. Clean the board or module with alcohol. Allow it to dry fully. 2. Nylock screws are recommended for mounting the to the board. 3. To improve the thermal and RF performance, we recommend the following: a. Apply thermal compound or 4 mils indium shim between the package and the board. b. Attach a heat sink to the bottom of the board and apply thermal compound or 4 mils indium shim between the heat sink and the board. 4. Apply solder to each pin of the. 5. Clean the assembly with alcohol. Mechanical Information Units: inches Tolerances: unless specified x.xx = ±.1; x.xxx = ±.5 Materials: Base: Copper Leads: Alloy 194 Lid: LCP (Liquid Crystal Polymer) Finish: Gold Part is epoxy sealed Marking: : Part number YY: Part Assembly year WW: Part Assembly week ZZZ: Serial Number MXXX: Batch ID Preliminary Datasheet: Rev A of 13 - Disclaimer: Subject to change without notice

13 Product Compliance Information ESD Sensitivity Ratings Caution! ESD-Sensitive Device ESD Rating: TBD Value: TBD Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 MSL Rating Level 5A at +26 C convection reflow The part is rated Moisture Sensitivity Level 5A at 26 C per JEDEC standard IPC/JEDEC J-STD-2 Solderability Compatible with the latest version of J-STD-2, Leadfree solder, 26 C RoHS Compliance This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C 15 H 12 Br 4 2 ) Free PFOS Free SVHC Free ECCN US Department of Commerce: 3A1.b.2.b Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: Tel: info-sales@triquint.com Fax: For technical questions and application information: info-products@triquint.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Preliminary Datasheet: Rev A of 13 - Disclaimer: Subject to change without notice