DATASHEET ISL Features. Applications. Ordering Information. Typical Application Circuit. MMIC Silicon Bipolar Broadband Amplifier
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1 DATASHEET ISL008 NOT RECOMMENDED FOR NEW DESIGNS RECOMMENDED REPLACEMENT PART ISL01 Data Sheet MMIC Silicon Bipolar Broadband Amplifier FN21 Rev 0.00 The ISL00, ISL007, ISL008 and ISL009, ISL0, ISL011 constitute a family of high performance gain blocks featuring a Darlington configuration using high f t transistors and excellent thermal performance. They are an ideal choice for DVB-S LNB cable receiver applications. ISL00, ISL007, ISL008 offer higher OIP3 performance while the ISL009, ISL0, ISL011 offer lower operating supply currents. ISL00 and ISL009 match a 7 source to a 0 load. ISL007 and ISL0 match a 7 source to a 7 load. ISL008 and ISL011 match a 0 source to a 0 load. Ordering Information PART NUMBER (Note) PART MARKING TAPE & REEL PACKAGE (Pb-Free) PKG. DWG. # ISL008IEZ-T7 CBE 7 (3k pcs) Ld SC-70 P.09 NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 0% matte tin plate termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-0. Features Input impedance of 0 Output impedance of 0 Noise figure of 3.9dB OIP3 of dbm Low input and output return losses Pb-free plus anneal available (RoHS compliant) Applications LNB and LNB-T line amplifiers IF gain blocks for satellite and terrestrial HDTV STBs PA driver amplifier Wireless data, satellite Bluetooth/WiFi Satellite locator and signal strength meters Typical Application Circuit +3.3V Pinout LD SC-70 GND 1 OUT µf 0pF 0pF µf GND 2 GND 3 0nH IN 3 VSP 8pF 1, 2, 8pF FN21 Rev 0.00 Page 1 of
2 Absolute Maximum Ratings (T A = 2 C) Supply Voltage from VSP to GND V Input Voltage V S V to GND -0.3V Power Dissipation See Packging Information Section Ambient Operating Temperature C to +8 C Storage Temperature C to +12 C Operating Junction Temperature C ESD Rating Human Body Model (Per MIL-STD-883 Method 301.7) V Machine Model (Per EIAJ ED-701 Method C-111) V CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are at the specified temperature and are pulsed tests, therefore: T J = T C = T A Electrical Specifications VSP = +3.3V, Zrsc = Zload = 0, TA = 2 C, unless otherwise specified. PARAMETER DESCRIPTION CONDITIONS MIN TYP MAX UNIT Gt Small Signal Gain GHz db 1.GHz db 2.0GHz db P1dB Output Power at 1dB Compression GHz dbm 2.0GHz dbm OIP3 Output Third Order Intercept Point GHz. dbm 2.0GHz 17.9 dbm BW 3dB Bandwidth 3dB below 00MHz 3.1 GHz IRL Input Return Loss GHz 1.0 db ORL Output Return Loss GHz 1. db RISOL Reverse Isolation 2.0GHz 2 db NF Noise Figure 2.0GHz 3.9 db ID Device Operating Current ma Device Test Setup Agilent _873ES VNA 0 0 CONNECTORLESS PLATFORM PICOSECOND LABS MODEL 2 0 PIN 3 PIN 0 DC BLOCK DUT BIAS TEE PICOSECOND LABS MODEL V I 1 I2 I DEVICE INPUT REFERENCE OUTPUT REFERENCE 3.3V POWER SUPPLY FN21 Rev 0.00 Page 2 of
3 Typical Performance Curves 0 environment IRL (db) ORL (db) FIGURE 1. INPUT RETURN LOSS vs FREQUENCY FIGURE 2. OUTPUT RETURN LOSS vs FREQUENCY S21 (db) S11 (db) FIGURE 3. S21 vs FREQUENCY FIGURE. S11 vs FREQUENCY S12 (db) S22 (db) FIGURE. S12 vs FREQUENCY FIGURE. S22 vs FREQUENCY FN21 Rev 0.00 Page 3 of
4 ISL008 Typical Performance Curves 0 environment OIP3 (dbm) FIGURE 7. OIP3 vs FREQUENCY dbm FIGURE 8. P1dB vs FREQUENCY NOISE FIGURE (db) FIGURE 9. NOISE FIGURE vs FREQUENCY GHz S GHz 0. GHz GHz S RF Café 02 FIGURE. S11 AND S22 vs FREQUENCY FN21 Rev 0.00 Page of
5 Packaging Information JEDEC JESD1-7 HIGH EFFECTIVE THERMAL CONDUCTIVITY TEST BOARD 0.3 POWER DISSIPATION (W) 17mW 0.0 SC70- JA =7 C/W AMBIENT TEMPERATURE ( C) FIGURE 11. PACKAGE POWER DISSIPATION vs AMBIENT TEMPERATURE FN21 Rev 0.00 Page of
6 Small Outline Transistor Plastic Packages (SC70-) A A2 SEATING b 0 (0.008) M e1 D e C X 1 X 1 WITH PLATING c C A1 E 0. (0.00) C BASE METAL L L1 b b1 R1 SEATING R -C- c1 VIEW C GAUGE L2 E1 C P.09 LEAD SMALL OUTLINE TRANSISTOR PLASTIC PACKAGE INCHES MILLIMETERS SYMBOL MIN MAX MIN MAX NOTES A A A b b c c D E E e 0.02 Ref Ref - e Ref 1.30 Ref - L L Ref. Ref. L BSC BSC N R R o 8 o 0 o 8 o - Rev. 2 9/03 NOTES: 1. Dimensioning and tolerance per ASME Y1.M Package conforms to EIAJ SC70 and JEDEC MO3AB. 3. Dimensions D and E1 are exclusive of mold flash, protrusions, or gate burrs.. Footlength L measured at reference to gauge plane.. N is the number of terminal positions.. These Dimensions apply to the flat section of the lead between 0.08mm and mm from the lead tip. 7. Controlling dimension: MILLIMETER. Converted inch dimensions are for reference only VIEW C Copyright Intersil Americas LLC 0. All Rights Reserved. All trademarks and registered trademarks are the property of their respective owners. For additional products, see Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted in the quality certifications found at Intersil products are sold by description only. Intersil may modify the circuit design and/or specifications of products at any time without notice, provided that such modification does not, in Intersil's sole judgment, affect the form, fit or function of the product. Accordingly, the reader is cautioned to verify that datasheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see FN21 Rev 0.00 Page of
DATASHEET ISL Features. Ordering Information. Applications. Typical Application Circuit. MMIC Silicon Bipolar Broadband Amplifier
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More informationAnalog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED
Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK v4.414 Typical Applications Features
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More information= +25 C, IF= 100 MHz, LO = +15 dbm*
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Rev. 1 20 October 2011 Product data sheet 1. Product profile 1.1 General description Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin
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