Reverse voltage VR max. Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted) Short. Temp. S coefficient (A/W) of
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1 Ceramic package photodiodes with low dark current The are ceramic package photodiodes that offer low dark current. Ceramic package used is light-impervious, so no stray light can reach the photosensitive area from the side or backside. This allows reliable optical measurements in the visible to near infrared range, over a wide dynamic range from low light levels to high light levels. Features, : For visible range -01, : For visible to IR range : For visible to near IR range Applications Exposure meters Illuminometers Copiers Display light control Optical switches Structure /Absolute maximum ratings Type no. Dimensional outline/ Window material* 1 area size Reverse voltage VR max Absolute maximum ratings Operating temperature Topr Storage temperature Tstg (mm) (V) ( C) ( C) (1)/V (2)/R (3)/V to +60* 2-20 to +70* (4)/R *1: Window material R=resin coating, V=visual-compensation filter *2: No condensation Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted) Photosensitivity Short Dark Rise Terminal Shunt Spectral Peak Temp. Temp. S Infrared circuit current time capacitance resistance response sensitivity coefficient coefficient (A/W) sensitivity current ID tr Ct Rsh Type no. range wavelength of of ratio Isc λ λp GaP He-Ne Isc VR=1 V VR=0 V VR=0 V VR=10 mv TCID λp LED laser 100 lx max. RL=1 kω f=10 khz Min. Typ. (nm) (nm) 560 nm 633 nm (%) (μa) (%/ C) (pa) (times/ C) (μs) (pf) (GΩ) (GΩ) 320 to to to to to
2 Spectral response Photosensitivity temperature characteristics () (Typ. Ta=25 C) +1.0 (Typ.) Photosensitivity (A/W) QE=100% -01 Temperature coefficient (%/ C) Wavelength (nm) Wavelength (nm) KSPDB0119EB KSPDB0063EB Rise time vs. load resistance Dark current vs. reverse voltage 1 ms (Typ. Ta=25 C, VR=0 V) 1 na (Typ. Ta=25 C) 100 μs 100 pa Rise time 10 μs 1 μs /-01 Dark current 10 pa 1 pa /-01 /-01, 100 ns 100 fa / ns Load resistance (Ω) 10 fa Reverse voltage (V) KSPDB0120EA KSPDB0121EA 2
3 Shunt resistance temperature characteristics Short circuit current linearity 100 TΩ (Typ. VR=10 mv) 10 0 (Typ. Ta=25 C, A light source fully illuminated) Shunt resistance 10 TΩ 1 TΩ 100 GΩ 10 GΩ 1 GΩ /-01 /-01 Short circuit current (A) MΩ Ambient temperature ( C) KSPDB0122EA Incident light level (lx) KSPDB0123EA Directivity, -01, /-14 (Typ. Ta=25 C, light source: tungsten lamp) Relative sensitivity (%) KSPDB0342EA (Typ. Ta=25 C, light source: tungsten lamp) Relative sensitivity (%) KSPDB0343EA 3
4 Dimensional outlines (unit: mm) (1) (2) -01 area 1.3 area ± ± ± ± ± ± 0.2 KSPDA0053EA KSPDA0052EA (3) (4) / area area ± ± 0.2 A 9 ± ± 0.2 A 0.6 KSPDA0055EA KSPDA0054EA 4
5 Related information Precautions Notice Metal, Ceramic, Plastic products / Precautions Technical information Si photodiode / Application circuit examples Information described in this material is current as of March, Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. HAMAMATSU PHOTONICS K.K., Solid State Division Ichino-cho, Higashi-ku, Hamamatsu City, Japan, Telephone: (81) , Fax: (81) U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J , U.S.A., Telephone: (1) , Fax: (1) Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D Herrsching am Ammersee, Germany, Telephone: (49) , Fax: (49) France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, Massy Cedex, France, Telephone: 33-(1) , Fax: 33-(1) United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) , Fax: (44) North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan Kista, Sweden, Telephone: (46) , Fax: (46) Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, Arese, (Milano), Italy, Telephone: (39) , Fax: (39) China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing , China, Telephone: (86) , Fax: (86) Cat. No. KSPD1039E03 Mar DN 5
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