Single Photoelectron timing resolution of SiPM

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1 Research & Study Detector Group Single Photoelectron timing resolution of SiPM XVII SuperB Workshop - Kick Off meeting May 29 th - June 1 st 2011 Isola d Elba Véronique Puill, IN2P3-LAL -GRED C. Bazin, D. Breton, L. Burmistrov, V. Chaumat, N. Dinu, J. Maalmi, A. Stocchi, Jean-François Vagnucci 1

2 Plan List of the SiPMs studied at LAL Basic characterization of SiPM : operational voltage range, gain, dark noise, variation with temperature. Test bench for timing measurement Timing resolution measurement principle SPTR in function of the bias voltage SPTR in function of the wavelength SPTR in function of the temperature 2

3 1 mm 2 SiPMs characterized at LAL AdvanSiD (F.B.K) Reference Pixel nb Pixel size (µm) V BD (V) ASD-SiPM1S-M x Hamamatsu MPPC S x S x S x S-BK 4S x S-FS x SensL SPM SPM1020X x SPM1035X x Non commercial products 3

4 9 mm 2 SiPMs characterized at LAL AdvanSiD (F.B.K (3 x 3 mm²) Reference Pixel nb Pixel size (µm) V BD (V) ASD-SiPM3S-M x Hamamatsu MPPC (3 x 3 mm²) S x S x S x SensL SPM (2,85 x 2,85 mm²) SPM-3035X x Non commercial products 4

Pt100 Amplifier Digital Tektronix Oscilloscope (500 MHz) Counter Digital Multimeter Automatic

5 Determination of the operational voltage range of the SiPMs Dark Monitor Temperature Test bench Source-meter Stable voltage bias (0 200 V, accuracy : 1 µv) Precise current measurement (1 pa) SiPM Pt100 Amplifier Digital Tektronix Oscilloscope (500 MHz) Counter Digital Multimeter Automatic acquisition PC running LabView & C++ programs climatic chamber (0 40 C accuracy = 0.1 C) Measurements of V BD, gain, DCR 5

6 Vbd (V) Evolution of V BD with temperature 70 69,5 Hamamatsu 100µm V bd = 0,0574xT + 67,542 MPPC 1 mm² Hamamatsu 50µm V bd = 0,0565xT + 67, ,5 Hamamatsu 25µm V bd = 0,0557xT + 67, , , Température ( C) Breakdown voltage increases with the temperature dv BD /dt ~ 56 mv/ C 6

The Timing Test Bench Dark box (1 m 3 ) Pilas laser diode (405nm, 470 nm, 633 nm, 40-50 ps) lens +

Acquisition Laser diode Driver jitter 3 ps calibrated detectors (PIN, PMT) STOP detector Ref PMT Y

7 The Timing Test Bench Dark box (1 m 3 ) Pilas laser diode (405nm, 470 nm, 633 nm, ps) lens + neutral filter X SiPM SSiPM Oscillo Lecroy WAVEPRO 740ZI 4 GHz, 40 Gs/s, 32 Mpts/channel PC Acquisition Laser diode Driver jitter 3 ps calibrated detectors (PIN, PMT) STOP detector Ref PMT Y START laser driver Z 3D translation tables Temperature variation = 0.1 C WaveCatcher cable (delay) trigger laser 7

8 Measurement principle of the SiPM timing resolution Δt SiPM trigger laser threshold for the laser = 50 % threshold = 50 % SSiPM Measurement of the time between the laser and the SiPM signals distribution of the Δt 8

9 DCR (Hz) Ireverse (A) Gain Choice of the SPTR measurement points 1,E-03 1,E-04 1,E-05 1,E-06 1,E-07 1,E-08 1,E-09 1,E-10 1,E-11 1,0E+06 9,0E+05 8,0E+05 7,0E+05 6,0E+05 5,0E+05 4,0E+05 3,0E+05 2,0E+05 Ireverse Vbias DCR 20 C 0,4 0,6 0,8 1 1,2 1,4 1,6 ΔV (V) = Vbias - VBD 3,5E+06 3,0E+06 2,5E+06 2,0E+06 1,5E+06 1,0E+06 5,0E+05 0,0E+00 e.g : MPPC S-FS 20 C VBD (V) Gain 68,8 69,3 69,8 70,3 70,8 71,3 69,8 69,7 69,6 69,5 69,4 69,3 69,2 69,1 69 VBD 20 C Vbias Vbd = 5,9E -02 x temp+ 67, Temperature ( C) Correction of the bias voltage if the temperature changes inside the test bench to maintain a constant gain 9

photon/pulse/mm² at the SiPM output : majority of 0, few 1

10 SiPM illumination conditions High power of the laser diode pulse width ~40 ps-50 ps depending on the laser head neutral filters ~ 1 photon/pulse/mm² at the SiPM output : majority of 0, few 1 photo-electron + small quantity of signal 2 p.e due to cross-talk 1 p.e 2 p.e = cross-talk 10

11 Contribution to the timing resolution of the detection chain Pilas pulsed laser diode (nm) Pulse laser width (ps) Pilas driver : jitter 3 ps Timing resolution of the LECROY scope 1 ps Timing resolution of the Wavecatcher 8 ps 11

12 1 mm² SiPM SPTR in function of the applied voltage SiPM SPTR 1 mm² - 20 C nm S S S MPPC-BK-4S (50 µm) MPPC FS (100 µm) ASD-1-S SPM1020 SPM ,5 1 1,5 2 2,5 3 Vbias-VBD (V) VDB : breakdown voltage 12

13 9 mm² SiPM SPTR in function of the applied voltage SiPM SPTR 9 mm² - 20 C nm 500 S S S ASD-9-S ,25 0,75 1,25 1,75 2,25 2,75 3,25 3,75 4,25 Vbias-VBD (V) SPM-3035X13 too noisy to measure the SPTR 13

14 SiPM SPTR = f( 20 C and Vbias max SPTR MPPC 1 mm² 50 & 100 µm MPPC 2,4 V MPPC 1,4 V % lamnda (nm) SPTR Sensl 1 mm² 20 & 35 µm % ,4 V 2,4 v lamnda (nm) 14

15 SiPM SPTR = f( 20 C and Vbias max SPTR ASD SiPM1S-M % ASD 1 V lamnda (nm) SPTR MPPC 25 & 100 µm 9 mm² lamnda (nm) MPPC 4 V MPPC 1 V % 15

16 1 mm² SiPM SPTR = Vbias max 200 SPTR MPPC-10-50S - 1 mm² température ( C) 405 nm 467 nm 635 nm SPTR MPPC S - 1 mm² nm 467 nm 635 nm température ( C) 16

17 1 mm² SiPM SPTR = Vbias max 200 SPTR SPM1020x13-1 mm² nm 12 % nm 635 nm Linéaire 25 (405 nm) température ( C) 220 SPTR SPM1035x13-1 mm² % nm 467 nm 635 nm température ( C) 17

18 1 mm² SiPM SPTR = Vbias max 150 SPTR ASD-SiPM 1S-M-50-1 mm² nm 635 nm température ( C) 9 mm² SiPM SPTR = Vbias max ASD 9S-M-50 and SPM-3035X13 (Sensl) too difficult to measure at 1 p.e 18

19 9 mm² SiPM SPTR = Vbias max 280 SPTR MPPC S mm² température ( C) 405 nm 467 nm 635 nm SPTR MPPC S mm² température ( C) 405 nm 467 nm 635 nm

20 Conclusion Area (mm²) Producer Pixel size (µm) Best SPTR (FWHM nm & Vbias max SPTR Variation 405 nm 635 nm SPTR variation 0 C 20 C 1 HAMAMATSU ps 0 % 5 % 1 HAMAMATSU 100 ps 10 % 5 % 1 Sensl 20 ps 0 % 10 % 1 Sensl ps 15 % 15 % 1 ASD (FBK) ps 30 % 0 % 9 HAMAMATSU ps 10 % 0 % 9 HAMAMATSU ps 20 % 0 % 9 Sensl 35 measurement impossible at single p.e level 9 ASD (FBK) ps 10 % measurement impossible 20

21 Additional slides 21

22 References of the plots Characterization of a prototype matrix of Silicon Photomultipliers, N. Dinu, P. Barrillon, C. Bazin, N. Belcari, M.G. Bisogni, S. Bondil-Blin, M. Boscardin, V. Chaumat, G. Collazuol, C. de La Taille, A. del Guerra, G. Llosá, S. Marcatili, M. Melchiorri, A. Tarolli, C. Piemonte, V. Puill, J.F.Vagnucci, N. Zorzi J.F.Vagnucci,, Nuclear Inst. and Methods in Physics Research A 610 (2009), pp Electro-optical characterization of SiPM: a comparative study, N. Dinu, Z. Amara, C. Bazin, V. Chaumat, C. Cheikali, G. Guilhem, V. Puill, C. Sylvia, Nuclear Inst. and Methods in Physics Research A 610 (2009), pp Temperature and Bias Voltage Dependence of the MPPC Detectors, NSS IEEE Knoxwille Proceedings, N. Dinu, C. Bazin. V. Chaumat, C. Cheikali, A. Para, V. Puill, C. Sylvia, J.F. Vagnucci 22

23 MPPC 50 µm «wide trace» NEW HAMAMATSU PROTO MPPC 100 µm «wide trace» 23

24 Gain and DCR of S Temperature and Bias Voltage Dependence of the MPPC Detectors, NSS IEEE Knoxwille Proceedings, N. Dinu, C. Bazin. V. Chaumat, C. Cheikali, A. Para, V. Puill, C. Sylvia, J.F. Vagnucci 24

CAEN Tools for Discovery

CAEN Tools for Discovery Viareggio March 28, 2011 Introduction: what is the SiPM? The Silicon PhotoMultiplier (SiPM) consists of a high density (up to ~10 3 /mm 2 ) matrix of diodes connected in parallel on a common Si substrate.