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1 RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P OUT = 8 W with 11.5dB /7.5 V New RF plastic package Description PowerSO-RF (formed lead) The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of ST s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-RF. Device s superior linearity performance makes it an ideal solution for portable radio. The PowerSO- plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Figure 1. Gate PowerSO-RF (straight lead) Pin connection Source Drain Table 1. Device summary Order code Package Packing PowerSO-RF (formed lead) Tube PD54008S-E PowerSO-RF (straight lead) Tube PD54008TR-E PowerSO-RF (formed lead) Tape and reel PD54008STR-E PowerSO-RF (straight lead) Tape and reel May 2011 Doc ID Rev 3 1/
2 Contents Contents 1 Electrical data Maximum ratings Thermal data Electrical characteristics Static Dynamic Moisture sensitivity level Impedance Typical performance PD54008S-E Test circuit Circuit layout Common source s-parameter Package mechanical data Revision history /29 Doc ID Rev 3
3 Electrical data 1 Electrical data 1.1 Maximum ratings Table 2. Absolute maximum ratings (T CASE = 25 C) Symbol Parameter Value Unit V (BR)DSS Drain-source voltage 25 V V GS Gate-source voltage ± 20 V I D Drain current 5 A P DISS Power dissipation (@ T C = 70 C) 73 W T J Max. operating junction temperature 165 C T STG Storage temperature -65 to +150 C 1.2 Thermal data Table 3. Thermal data Symbol Parameter Value Unit R thjc Junction - case thermal resistance 1.2 C/W Doc ID Rev 3 3/29
4 Electrical characteristics 2 Electrical characteristics T CASE = +25 o C 2.1 Static Table 4. Static Symbol Test conditions Min. Typ. Max. Unit I DSS V GS = 0 V DS = 25 V 1 µa I GSS V GS = 20 V V DS = 0 1 µa V GS(Q) V DS = V I D = 150 ma V V DS(ON) V GS = V I D = 2 A 0.6 V g FS V DS = V I D = 2 A mho C ISS V GS = 0 V DS = 7.5 V f = 1 MHz 91 pf C OSS V GS = 0 V DS = 7.5 V f = 1 MHz 68 pf C RSS V GS = 0 V DS = 7.5 V f = 1 MHz 8.5 pf 2.2 Dynamic Table 5. Dynamic Symbol Test conditions Min. Typ. Max. Unit P 1dB V DD = 7.5 V, I DQ = 150 ma f = 8 W G P V DD = 7.5 V, I DQ = 150 ma, P OUT = 8 W, f = 11.5 db h D V DD = 7.5 V, I DQ = 150 ma, P OUT = 8 W, f = % Load mismatch V DD = 9.5 V, I DQ = 150 ma, P OUT = 8 W, f = All phase angles 20:1 VSWR 2.3 Moisture sensitivity level Table 6. Moisture sensitivity level Test methodology Rating J-STD-020B MSL 3 4/29 Doc ID Rev 3
5 Impedance 3 Impedance Figure 2. Current conventions D ZDL Typical Input Impedance Typical Drain Load Impedance G Zin S Table 7. Impedance data Freq. (MHz) Z IN (Ω) Z DL (Ω) Freq. (MHz) Z IN (Ω) Z DL (Ω) j j j j j j j j j j j j j j j j j j 1.97 Doc ID Rev 3 5/29
6 Typical performance 4 Typical performance Figure 3. Capacitance vs. drain voltage Figure 4. Drain current vs. gate-source voltage C (pf) 00 Id (A) f = 1 MHz Ciss Coss Crss VDS (V) 0.5 VDS = V VGS (V) Figure 5. Gate-source voltage vs. case temperature VGS (NORMALIZED) ID = 3 A 1 ID = 2 A ID = 1.5 A 0.98 ID = 1 A VDS = V ID = 0.25 A Tc ( C) 6/29 Doc ID Rev 3
7 Typical performance 4.1 Figure 6. Output power vs. input power Figure 7. Power gain vs. output power Gp (db) VDD = 7.5 V IDQ = 150 ma VDD = 7.5 V IDQ = 150 ma Pin (W) Figure 8. Drain efficiency vs. output power Figure 9. Return loss vs. output power Nd (%) 70 Rtl (db) VDD = 7.5 V IDQ = 150 ma VDD = 7.5 V IDQ = 150 ma Doc ID Rev 3 7/29
8 Typical performance Figure. Output power vs. bias current Figure 11. Drain efficiency vs. bias current Nd (%) Pin = 0.6 W VDD = 7.5 V 40 Pin =.6 W VDD = 7.5 V IDQ (ma) IDQ (ma) Figure 12. Output power vs. drain voltage Figure 13. Drain efficiency vs. drain voltage 14 Nd (%) IDQ = 150 ma Pin = 0.6 W VDS (V) IDQ = 150mA Pin = 0.6 W VDS (V) 8/29 Doc ID Rev 3
9 Typical performance Figure 14. Output power vs. gate bias voltage Table 8. IMD3 vs. output power (470MHz) IMD3 (db) Vdd = 7.5V Vdd = 9V VDD = 7.5 V Pin = 0.6 W -45 Freq = 470 MHz Idq = 400 ma VGS (V) Figure 15. Power gain vs. output power Table 9. Return loss and efficiency vs. output power Gp (db) IRL (db) 5 Vdd = 7.5 V Idq = 150 ma Eff. (%) MHz MHz MHz MHz MHz MHz MHz 175 MHz 17 Vdd = 7.5 V Idq = 150 ma MHz Doc ID Rev 3 9/29
10 Typical performance 4.2 PD54008S-E Figure 16. Output power vs. input power Figure 17. Power gain vs. output power Gp (db) VDD = 7.5 V IDQ = 150 ma VDD = 7.5 V IDQ = 150 ma Pin (W) Figure 18. Drain efficiency vs. output power Figure 19. Return loss vs. output power Nd (%) 70 Rtl (db) VDD = 7.5 V IDQ = 150 ma VDD = 7.5 V IDQ = 150 ma /29 Doc ID Rev 3
11 Typical performance Figure 20. Output power vs. bias current Figure 21. Drain efficiency vs. bias current Nd (%) Pin = 0.45 W VDD = 7.5 V 40 Pin = 0.45 W VDD = 7.5 V IDQ (ma) IDQ (ma) Figure 22. Output power vs. drain voltage Figure 23. Drain efficiency vs. drain voltage 14 Nd (%) VDS (V) IDQ = 150mA Pin = 0.45 W IDQ = 150mA Pin = 0.45 W VDS (V) Doc ID Rev 3 11/29
12 Typical performance Figure 24. Output power vs. gate bias voltage VDD = 7.5 V Pin = 0.45 W VGS (V) 12/29 Doc ID Rev 3
13 Test circuit 5 Test circuit Figure 25. Test circuit schematic Table. Component Test circuit component part list Description B1,B2 Short ferrite bead, fair rite products ( ) C1,C13 C2,C3,C4,C,C11,C12 C5 C6,C17 C7,C14 C8,C15 C9,C16 L1 N1,N2 R1 R2 R3 R4 Z1 Z2 Z3 Z4 Z5 Z6,Z7 Z8 240 pf, 0 mil chip capacitor 0 to 20 pf trimmer capacitor 130 pf, 0 mil chip capacitor 120 pf, 0 mil chip capacitor µf, 50 V electrolitic capacitor pf, 0 mil chip capacitor 0.1 F, 0 mil chip capacitor 55,5 Nh, 5 turn, Coilcraft Type N flange mount 15 Ω, 0805 chip resistor 1.0 kω, 1/8 W resistor 15 Ω, 0805 chip resistor 33 kω, 1/8 W resistor X microstrip X microstrip X microstrip X microstrip X microstrip X microstrip X microstrip Doc ID Rev 3 13/29
14 Test circuit Table. Test circuit component part list (continued) Component Description Z9 Z Z11 Board X microstrip X microstrip X microstrip ROGER, ultra lam 2000 THK 0.030, εr = oz. ED cu 2 SIDES. 14/29 Doc ID Rev 3
15 Circuit layout 6 Circuit layout Figure 26. Test fixture component layout Figure 27. Test circuit photomaster 4 inches 6.4 inches Doc ID Rev 3 15/29
16 Common source s-parameter 7 Common source s-parameter Table 11. Freq (MHz) S-parameter for (V DS = 7.5 V I DS = 150 ma) IS11I S11.F IS21I S21.F IS12I S12.F IS22I S22.F /29 Doc ID Rev 3
17 Common source s-parameter Table 12. Freq (MHz) S-parameter (V DS = 7.5 V I DS = 800 ma) IS11I S11.F IS21I S21.F IS12I S12.F IS22I S22.F Doc ID Rev 3 17/29
18 Common source s-parameter Table 13. S-parameter for (V DS = 7.5 V I DS = 1.5 A) Freq (MHz) IS11I S11.F IS21I S21.F IS12I S12.F IS22I S22.F /29 Doc ID Rev 3
19 Common source s-parameter Table 14. Freq (MHz) S-parameter for PD54008S-E (V DS = 7.5 V I DS = 150 ma) IS11I S11.F IS21I S21.F IS12I S12.F IS22I S22.F Doc ID Rev 3 19/29
20 Common source s-parameter Table 15. Freq (MHz) S-parameter for PD54008S-E (V DS = 7.5 V I DS = 800 ma) IS11I S11.F IS21I S21.F IS12I S12.F IS22I S22.F /29 Doc ID Rev 3
21 Common source s-parameter Table 16. S-parameter for PD54008S-E (V DS = 7.5 V I DS = 1.5 A) Freq (MHz) IS11I S11.F IS21I S21.F IS12I S12.F IS22I S22.F Doc ID Rev 3 21/29
22 Package mechanical data 8 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 22/29 Doc ID Rev 3
23 Package mechanical data Table 17. PowerSO-RF formed lead (Gull Wing) mechanical data Dim. mm. Inch Min. Typ. Max. Min. Typ. Max. A A A A a b c D D E E E E F G L R R T 2 deg 5 deg 8 deg 2 deg 5 deg 8 deg T1 6 deg 6 deg T2 deg deg Note: Resin protrusions not included (max value: 0.15 mm per side) Doc ID Rev 3 23/29
24 Package mechanical data Figure 28. Package dimensions Table 18. PowerSO-RF straight lead mechanical data Dim. mm. Inch Min. Typ. Max. Min. Typ. Max. A A A A a b c D D E E E E F G R R T1 6 deg 6 deg T2 deg deg Note: Resin protrusions not included (max value: 0.15 mm per side) 24/29 Doc ID Rev 3
25 Package mechanical data Figure 29. Package dimensions Doc ID Rev 3 25/29
26 Package mechanical data Figure 30. Tube information 26/29 Doc ID Rev 3
27 Package mechanical data Figure 31. Reel information Doc ID Rev 3 27/29
28 Revision history 9 Revision history Table 19. Document revision history Date Revision Changes 06-Apr Initial release. 21-May-20 2 Added: Table 6: Moisture sensitivity level. 04-May Updated Table 1: Device summary and Figure 31: Reel information. 28/29 Doc ID Rev 3
29 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America Doc ID Rev 3 29/29
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