No need for external driver, saving PCB space and cost.

Similar documents
SP6T RF Switch JSW6-23DR Ω High Power 3W 5 to 2000 MHz. The Big Deal

Monolithic Amplifier GVA-60+ Flat Gain, High IP to 5 GHz. The Big Deal

50~100MHz. 100~210MHz C2 1nF. Operating Case Temperature -40 to +85 Storage Temperature -55 to +155 Junction Temperature +126 Operating Voltage

* Notices. Operating Case Temperature -40 to +85 Storage Temperature -55 to +155 Junction Temperature +126 Operating Voltage.

Features low conversion loss, 6.79 db typ. wideband, 1 to 1000 MHz. Applications HF/VHF/UHF cellular federal & defense communications

LAVI-U252VH+ Performance Charts. LO=+18dBm LO=+21dBm LO=+24dBm. LO=+18dBm LO=+21dBm LO=+24dBm. LO=+18dBm LO=+21dBm LO=+24dBm

Features low conversion loss, 6.05 db typ. good L-R isolation, 35 db typ, L-I, 30 db typ. wideband, 10 to 2000 MHz rugged shielded case

QPC6222SR GENERAL PURPOSE DPDT TRANSFER SWITCH. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

Applications protects low noise amplifiers and other devices from ESD or input power damage military, hi-rel applications

Limiter RLM Ω Broadband 950 to 2050 MHz. The Big Deal

ADE-R3GLH+ CONVERSION LOSS 50. ISOLATION (db) 10 LO= +7 dbm LO= +10 dbm LO=+13 dbm FREQUENCY (MHz) RF VSWR

Features low conversion loss, 6.11 db typ. excellent L-R isolation, 44 db typ. CONVERSION LOSS (db) Mid-Band m. Range f L. Conversion Loss (db)

Frequency Mixer wide band

Features low conversion loss, 5.94 db typ. aqueous washable J-leads for strain relief. CONVERSION LOSS (db) Mid-Band m. Range f L.

fco, MHz Nom. * Not for use with DC voltage at input and output ports 3dB 1dB F co F 20 F R E QUE NC Y F R 20dB Frequency (MHz)

Features wideband, 10 to 500 MHz. Applications military, hi-rel applications stabilizing generator outputs reducing amplitude variations

Features excellent conversion loss, 6.0 db typ. high L-R isolation, 40 db typ. L-I isolation, 55 db typ. rugged welded construction

TGL2209 SM 8 12 GHz 50 Watt VPIN Limiter

Features OBSOLETE. = +25 C, IF = 1.45 GHz, LO = +13 dbm [1]

TGL2210-SM_EVB GHz 100 Watt VPIN Limiter. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information

QPC1022TR7. Broad Band Low Distortion SPDT Switch. General Description. Product Features. Functional Block Diagram RF1612.

Not recommended for new designs

MAMX Sub-Harmonic Pumped Mixer GHz Rev. V1. Functional Schematic. Features. Description. Pin Configuration 1

1.5 GHz to 4.5 GHz, GaAs, MMIC, Double Balanced Mixer HMC213BMS8E

MH1A. Product Features. Product Description. Functional Diagram. Applications. Specifications (1) Absolute Maximum Rating. Ordering Information

QPL6216TR7 PRELIMINARY. Product Description. Feature Overview. Functional Block Diagram. Applications. Ordering Information. High-Linearity SDARS LNA

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

CMD197C GHz Distributed Driver Amplifier

Features. = +25 C, LO = 0 dbm, Vcc = Vcc1, 2, 3 = +5V, G_Bias = +2.5V *

Preliminary Datasheet

OBSOLETE HMC422MS8 / 422MS8E. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram

Typical Performance 1

Typical Performance 1

HMC412MS8G / 412MS8GE

OBSOLETE HMC215LP4 / 215LP4E. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram

HMC412BMS8GE MIXER - SINGLE & DOUBLE BALANCED - SMT. Typical Applications. Features. Functional Diagram. General Description

Features. = +25 C, LO = 0 dbm, Vcc = Vcc1, 2, 3 = +5V, G_Bias = +2.5V *

GaAs MMIC High Dynamic Range Mixer

GHz Wideband High Linearity LNA Gain Block. Typical Performance 1

CMD179C GHz Fundamental Mixer. Features. Functional Block Diagram. Description

CMD180C GHz Fundamental Mixer. Features. Functional Block Diagram. Description

Features. = +25 C, IF = 100 MHz, LO = 0 dbm, Vcc1, 2, 3, = +5V, G_Bias = +3.5V*

TGP2109-SM GHz 6-Bit Digital Phase Shifter. Product Description. Functional Block Diagram. Product Features. Applications. Ordering Information

Product Specification PE4151

HMC485MS8G / 485MS8GE. Features OBSOLETE. = +25 C, LO = 0 dbm, IF = 200 MHz*, Vdd= 5V

Features OBSOLETE. = +25 C, As a Function of LO Drive. LO = +10 dbm. IF = 70 MHz

1 Watt High Linearity, High Gain InGaP HBT Amplifier. Product Description

15-32 GHz GaAs MMIC Voltage Variable Attenuator EWA4001YB. Voltage Variable Attenuator - Packaged. Device Photo. Features.

Features. = +25 C, Vdd = +4.5V, +4 dbm Drive Level

HMC581LP6 / 581LP6E MIXERS - SMT. HIGH IP3 RFIC DUAL DOWNCONVERTER, MHz. Typical Applications. Features. Functional Diagram

Features OBSOLETE. = +25 C, As a Function of LO Drive. LO = +13 dbm IF = 70 MHz

10 GHz to 26 GHz, GaAs, MMIC, Double Balanced Mixer HMC260ALC3B

TGP2108-SM 2.5-4GHz 6-Bit Digital Phase Shifter

Features. = +25 C, IF= 100 MHz, LO= +13 dbm* Parameter Min. Typ. Max. Min. Typ. Max. Units

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

USB Smart Power Sensor

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

GaAs MMIC Double Balanced Mixer. Description Package Green Status

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Features. = +25 C, As a Function of LO Drive & Vdd. IF = 1 GHz LO = -4 dbm & Vdd = +4V

Product Specification PE613050

6 GHz to 26 GHz, GaAs MMIC Fundamental Mixer HMC773A

CMD255C GHz High IP3 Fundamental Mixer. Features. Functional Block Diagram. Description

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

TGA2807-SM TGA2807. CATV Ultra Linear Gain Amplifier. Applications. Ordering Information. CATV EDGE QAM Cards CMTS Equipment

Features. = +25 C, 50 Ohm System

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

TGA2218-SM GHz 12 W GaN Power Amplifier

SR1320AD DC TO 20GHZ GAAS SP3T SWITCH

CMD183C GHz I/Q Mixer. Features. Functional Block Diagram. Description

CMD178C GHz Fundamental Mixer. Features. Functional Block Diagram. Description

Typical Performance 1. 2 OIP3 _ measured on two tones with a output power 8 dbm/ tone, F2 F1 = 1 MHz. +5V. RFout. Absolute Maximum Ratings

GaAs, MMIC Fundamental Mixer, 2.5 GHz to 7.0 GHz HMC557A

= +25 C, IF= 100 MHz, LO = +17 dbm*

SKY : MHz High Linearity, Single Up/Downconversion Mixer

FCPM-6000RC. Mini-Circuits P.O. Box , Brooklyn, NY (718)

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

GND RFC GND. Product Description. Ordering Information. GaAs MESFET Si BiCMOS Si CMOS

Parameter LO RF IF Min Typ Max Diode Option (GHz) (GHz) (GHz) LO drive level (dbm)

HMC958LC5 HIGH SPEED LOGIC - SMT. Typical Applications. Features. Functional Diagram. General Description

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Parameter Min. Typ. Max. Min. Typ. Max. Units

Typical Performance 1. 2 OIP3 _ measured with two tones at an output of 7 dbm per tone separated by 1 MHz. Absolute Maximum Ratings

Features. Parameter Min. Typ. Max. Units

SKY LF: GHz 4x2 Switch Matrix with Tone/Voltage Decoder

Features. = +25 C, Vdd = +7V, Idd = 820 ma [1]

RF1119ATR7. SP4T (Single Pole Four Throw Switch) Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Features. Parameter Min. Typ. Max. Min. Typ. Max. Units

HMC814LC3B FREQ. MULTIPLIERS - ACTIVE - SMT. SMT GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, GHz OUTPUT. Features. Typical Applications

TGC2610-SM 10 GHz 15.4 GHz Downconverter

SKY : Shielded Low-Noise Amplifier Front-End Module with GPS/GNSS/BDS Pre-Filter

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

CMD257C GHz High IP3 I/Q Mixer. Features. Functional Block Diagram. Description

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Features. = +25 C, IF= 100 MHz, LO= +15 dbm* Parameter Min. Typ. Max. Min. Typ. Max. Units

TGA4541-SM Ka-Band Variable Gain Driver Amplifier

CMD176P GHz 4-Bit Digital Phase Shifter. Features. Functional Block Diagram. Description

Transcription:

50Ω 5 to 2700 MHz High Power 3W The Big Deal High Port count in super small size Single Positive Supply Voltage, 2.5 4.8V High Power P0.1dB, 3W typ. Low Insertion Loss, 0.6 db at 1 GHz CASE STYLE: MT1817 Product Overview is a high power reflective SP6T RF switch, with reflective short on output ports in the off condition. Made using Silicon-on-Insulator process, it has very high IP3, a built-in CMOS driver and negative voltage generator. Its tiny 2x2mm, 14-lead case enables wideband performance in tight spaces and dense PCB layouts. Key Features Wideband operation 5-2700 MHz Feature Advantages Enables a single component to be used in a vast array of applications from VHF up to 2.7 GHz. High IIP3: 55 dbm typ. Results in little or negligible inter-modulation generation, meeting requirements for digital communication signals. Low Loss, 0.6 db at 1 GHz High input power, 3W Low loss and high power capability enable a single switch to be used for a variety of applications, saving inventory. Built in negative voltage generator Operates with a single positive supply voltage; no need for DC blocking capacitors, unless external DC is present at the RF ports. Built-in CMOS driver No need for external driver, saving PCB space and cost. Tiny MCLP package 2 x 2mm, 14-lead Provides low inductance, repeatable transitions, and excellent thermal contact to PCB. Page 1 of 7

Reflective RF Switch with internal driver. Single Supply Voltage, +2.5V to +4.8V, High Power 3W Product Features High Isolation, 37 db typ. at 1 GHz Low insertion loss, 0.6 db typ. at 1 GHz High IP3, 59 dbm typ. at 1 GHz Low current consumption, 40 µa typ. High Power, P0.1dB 3W typ. Typical Applications CATV systems SATCOM system Automated Test Stations Telecom systems 50Ω 5-2700 MHz CASE STYLE: MT1817 +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications General Description is a high power 3W reflective SPDT switch with integral driver, operates with single positive supply voltage while consuming, 40 µa typical. It has been designed for very wideband operation of 5-2700 MHz. It is packaged in a tiny 14-lead 2mm x 2mm x 0.55mm package and is rated MSL1 and class 1B ESD. Simplified Schematic and Pad Description Function Pad Number Description RF COM 13 RF Common/ SUM Port RF1 3 RF Out #1/In Port #1 RF2 9 RF Out #2/In Port #2 RF3 2 RF Out #3/In Port #3 RF4 10 RF Out #4/In Port #4 RF5 1 RF Out #5/In Port #5 RF6 11 RF Out #6/In Port #6 Function Pad Number Control #1 7 Control IN #1 Control #2 6 Control IN #2 Control #3 5 Control IN #3 VDD 4 Supply Voltage GND Paddle Ground Not Used 8,12,14 No Connection Description REV. C M153173 RS/TH/CP 151002 Page 2 of 7

RF Electrical Specifications (1), 5-2700 MHz, T AMB =25 C, V DD = +2.5 to 4.8V Parameter Condition (MHz) Min. Typ. Max. Units Frequency Range 5 2700 MHz 5 to 1000 0.6 0.8 Insertion Loss (2) Isolation between Common Port and RF1 to RF6 Ports (3) Return Loss (ON STATE) RF-COM, RF1 to RF6 Ports 1000 to 2000 0.6 0.8 2000 to 2700 0.6 0.8 5 to 1000 35 37 1000 to 2000 28 30 2000 to 2700 25 27 5 to 1000 15.5 1000 to 2000 14.2 2000 to 2700 14.3 db db db Input IP3 V DD=2.5 to 4.8V 5 to 500 55 V DD=3.0V 1000 to 2700 59 dbm 0.1dB Input Compression (4) 5 to 2700 35 dbm DC Electrical Specifications Parameter Min. Typ. Max. Units VDD, Supply Voltage 2.5 3.0 4.8 V Supply Current (V DD = 3V) 40 µa Control Voltage Low 0 0.4 V Control Voltage High 1.35 1.8 2.7 V Control Current 0.5 1.0 µa Shutdown Current at V DD = 3V 5 µa Notes: 1. As measured in Mini-Circuit s test board TB-724+ (see Characterization Test Circuit, Fig.1). 2. Insertion loss values are de-embedded from test board loss. 3. Isolations for other port combinations, see Tables 1 & 2 4. Do not exceed RF input power as shown in Absolute Maximum Rating table. Switching Specifications Parameter Min. Typ. Max. Units Rise/Fall Time (10 to 90% or 90 to 10% RF) Switching Time, 50% CTRL to 90/10% RF 0.42 (Rise Time) 0.84 (Fall Time) 1.9 (ON Time) 1.4 (OFF Time) µsec µsec Video Feedthrough, (control 0 to 1.65V, freq.=10 KHz) 3.0 mv P-P Page 3 of 7

Table 1. Isolation Matrix (RF-COM to RF1 to RF6 Ports) Isolation, Typ. (db) Frequency "On" Port (GHz) RF1 RF2 RF3 RF4 RF5 RF6 RF Com to Port RF1 0.01 1.0 49 37 48 53 49 RF1 1.0 2.0 43 30 42 38 43 RF1 2.0 2.7 40 28 38 34 39 RF2 0.01 1.0 48 48 38 48 50 RF2 1.0 2.0 43 42 30 42 38 RF2 2.0 2.7 39 38 28 39 33 RF3 0.01 1.0 39 44 44 38 45 RF3 1.0 2.0 32 38 38 30 39 RF3 2.0 2.7 29 35 35 28 36 RF4 0.01 1.0 44 39 44 44 37 RF4 1.0 2.0 38 31 38 39 30 RF4 2.0 2.7 35 28 35 36 27 RF5 0.01 1.0 44 39 44 40 40 RF5 1.0 2.0 33 34 31 34 34 RF5 2.0 2.7 28 31 27 31 31 RF6 0.01 1.0 39 41 39 43 40 RF6 1.0 2.0 33 32 34 31 34 RF6 2.0 2.7 31 28 31 27 31 Table 2. Isolation Matrix (Between Output Ports) Isolation, Typ. (db) Frequency "On" Port (GHz) RF1 RF2 RF3 RF4 RF5 RF6 From Port to Port RF1 0.01 1.0 54 29 57 37 55 RF1 1.0 2.0 45 24 47 32 46 RF1 2.0 2.7 41 22 42 28 42 RF2 0.01 1.0 54 57 29 55 37 RF2 1.0 2.0 44 46 24 45 32 RF2 2.0 2.7 40 41 22 41 29 RF3 0.01 1.0 30 58 59 29 62 RF3 1.0 2.0 25 46 46 24 46 RF3 2.0 2.7 22 43 43 22 43 RF4 0.01 1.0 58 30 58 62 30 RF4 1.0 2.0 45 25 46 46 24 RF4 2.0 2.7 42 22 42 42 22 RF5 0.01 1.0 44 58 32 45 48 RF5 1.0 2.0 37 45 26 38 40 RF5 2.0 2.7 32 42 23 37 37 RF6 0.01 1.0 45 44 46 32 48 RF6 1.0 2.0 38 37 38 26 39 RF6 2.0 2.7 36 32 36 23 37 Page 4 of 7

Absolute Maximum Ratings (5) Parameter Operating Temperature Ratings -40 C to +85 C Storage Temperature -55 C to 150 C V DD, Supply Voltage 5.0V Voltage Control RF input power 6-0.5V Min. 3.0 Max. 5 Watt 5. Operation of this device above any of these conditions may cause permanent damage. 6. Derate linearly to 2.5W at 85 C. Truth Table (7) (State of control voltage selects the desired switch state) State of Control Voltages RF Common to Control #1 Control #2 Control #3 RF1 RF2 RF3 RF4 RF5 RF6 L L L ON L L H ON L H L ON L H H ON H L L ON H L H ON H H H Shutdown 7. Any control state not defined above, places the switch in an undefined state, but will not damage the switch. Characterization Test Circuit R1, R2, R3, R4=1KΩ Figure 1: Block Diagram Of Test Circuit Used For Characterization. (DUT soldered on Mini-Circuits TB-724+) Test Equipment: For Insertion loss, Isolation, Return loss: Agilent s N5230A Network Analyzer, E3631A power supply. For Switching Time and Video Feed through Agilent s HP81110A pulse generator, 54833A Oscilloscope, E3631A power supply. Agilent s N9020A Spectrum Analyzer, E8257D Generator, E3631A power supply For Compression: R&S Network Analyzer ZVA24, E3631A power supply. Conditions: V DD = +2.5, +3.0 and +4.8V, Control= 0 and 1.35V. For Insertion loss, isolation and return loss: Pin=0 dbm For Input IP3: Pin=+10dBm/tone at VDD=3V For Switching time: RF frequency: DC at 200mV, Control Frequency: 10 KHz and 0 and +8V. Page 5 of 7

Product Marking 1 14 Black Body J6 Recommended Application Circuit R1, R2, R3, R4=1KΩ Fig. 2: Evaluation board includes case, connectors and components soldered to PCB. Page 6 of 7

Additional Detailed Technical Information additional information is available on our dash board. To access this information click here Performance Data Case Style Tape & Reel Standard quantities available on reel Suggested Layout for PCB Design Evaluation Board Environmental Ratings Data Table Swept Graphs MT1817 Plastic package; Lead finish: Matte Tin F108 7 reels with 20, 50, 100, 200, 500, 1K or 3K devices PL-416 TB-724+ ENV75 ESD Rating Human Body Model (HBM): Class 1B (500 to < 1000V) in accordance with JESD22-A114 Machine Model (MM): Class A (Pass 100V) in accordance with JESD22-A115 MSL Rating Moisture Sensitivity: MSL1 in accordance with IPC/JEDEC J-STD-020D MSL Test Flow Chart Start Visual Inspection Electrical Test SAM Analysis Reflow 3 cycles, 260 C Soak 85 C/85RH 168 hours Bake at 125 C, 24 hours Visual Inspection Electrical Test SAM Analysis Finish Additional Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, Standard Terms ); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits website at www.minicircuits.com/mclstore/terms.jsp Page 7 of 7