Parameter Min. Typ. Max. Units. Frequency Range 5 20 GHz. Minimum Insertion Loss db. Dynamic 5 GHz 23 db

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5-2 GHz GaAs MMIC EWA21ZZ September 29 Rev 3 Features Broadband Performance: 5 to 2 GHz Dynamic Range: 23 db, typical Input IP3: + 21 dbm, typical (any attenuation) Dual Voltage Control: -1.5 to V ESD Protection Bias Circuitry 1% RF and DC tested RoHS Compliant Die Size: 1.5 x 1.5 x.1 mm Description The Endwave EWA21ZZ is a GaAs phemt broadband voltage variable attenuator MMIC. The high linearity voltage variable attenuator provides 23 db dynamic range with +21 dbm input IP3 at any attenuation. This device has integrated ESD protection bias circuitry and can be used for a wide range of applications from defense electronics to commercial communication systems. All die are 1% DC and RF tested and visually inspected to Mil-Std-883 Method 21. Electrical Characteristics (Temperature = +25 C) Device Photo Block Diagram Parameter Min. Typ. Max. Units Frequency Range 5 2 GHz Minimum Insertion Loss 1.7 4.5 db Dynamic Range @ 5 GHz 23 db Input Return Loss (over dynamic range) 8 db Output Return Loss (over dynamic range) 8 db Input IP3 (any attenuation) 21 dbm Gain control Voltage 1 (Vctrl 1,2) -1.5 V Note 1: Max attenuation for Vctrl 1, 2 = volts Endwave Corporation 13 Baytech Drive San Jose CA 95134 877-Endwave Page 1 of 5

5-2 GHz GaAs MMIC EWA21ZZ 4 GHz - 23 GHz 4 GHz - 23 GHz September 29 Rev 3-4 5-6 -4 5-6 -4 5-6 4 5 6 7 8 9 1 11 12 13 14 15 16 17 18 19 2 21 22 23.9V_1.5V 16 GHz - 2 GHz 16 17 18 19 2.9V_1.5V 13 GHz 17 GHz 13 14 15 16 17 4 5 6 7 8 9 1 11 12 13 14 15 16 17 18 19 2 21 22 23.9V_1.5V 16 GHz - 2 GHz 16 17 18 19 2.9V_1.5V 13 GHz 17 GHz 13 14 15 16 17.9V_1.5V.9V_1.5V Endwave Corporation 13 Baytech Drive San Jose CA 95134 877-Endwave Page 2 of 5

5-2 GHz GaAs MMIC EWA21ZZ -4 5-6 -4 5-6 -4 5-6 11 GHz 15 GHz 11 12 13 14 15.9V_1.5V 9 GHz 13 GHz 9 1 11 12 13.9V_1.5V 4 GHz 9 GHz 4 5 6 7 8 9.9V_1.5V 11 GHz 15 GHz 11 12 13 14 15.9V_1.5V 9 GHz 13 GHz 9 1 11 12 13.9V_1.5V 4 GHz 9 GHz September 29 Rev 3 4 5 6 7 8 9.9V_1.5V Endwave Corporation 13 Baytech Drive San Jose CA 95134 877-Endwave Page 3 of 5

5-2 GHz GaAs MMIC EWA21ZZ September 29 Rev 3 Assembly Drawing Electrostatic Sensitive Device Observe Handling Precautions Outline Drawing To Attenuator Vcntrl1 EWA21ZZ EWA21ZZ To Attenuator Vcntrl2 Electrostatic Sensitive Device Observe Handling Precautions Bond Pad #1 - RF In Bond Pad #2 - RF Out Bond Pad #3 - Vcntrl2 Bond Pad #4 - Vcntrl1 Dimensions in mm [inches]. Die thickness is.4. Bond Pad and backside metallization is gold. Endwave Corporation 13 Baytech Drive San Jose CA 95134 877-Endwave Page 4 of 5

5-2 GHz GaAs MMIC EWA21ZZ September 29 Rev 3 RF Input Power (min attenuation) Control Voltage (Vctrl1, 2) Typical Application LO Input 12-16 GHz Pin = dbm Storage Temperature Operating Temperature IF Inputs DC 3.5 GHz EWU151ZZ Band Pass Filter Absolute Maximum Ratings EWG151ZZ +25 dbm -2.5 to V to +15ºC -4 to +85ºC EWA21ZZ Support Documentation Support documentation including Assembly Notes, Application Notes and Qualification Procedures can be found on our website at. EWP151ZZ RF Output 14.4.4 GHz Ordering Information Part Number Description EWA21ZZ RoHS compliant bare die in waffle or gel packs EWA21ZZ-EV EWA21ZZ in a connectorized test fixture Endwave Corporation 13 Baytech Drive San Jose CA 95134 877-Endwave Page 5 of 5