MM1-185H The MM1-185H is a passive double balanced MMIC mixer. It features excellent conversion loss, superior isolations and spurious performance across a broad bandwidth, in a highly miniaturized form factor. Accurate, nonlinear simulation models are available for Microwave Office through the Marki Microwave PDK. The MM1-185H is available as a wire bondable chip or in a connectorized package. The MM1-185H is a superior alternative to Marki Microwave carrier and packaged M9 mixers. Features Compact Chip Style Package (.58 x.46 x.4 ) CAD Optimized for Superior Isolation and Spurious Response Broadband Performance Excellent Unit-to-Unit Repeatability Fully nonlinear software models available with Marki PDK for Microwave Office RoHS Compliant Electrical Specifications - Specifications guaranteed from 5 to +1 C, measured in a 5Ω system. Specifications are shown for Configurations A (B). See page for port locations. All bare die are 1% DC tested and 1% visual inspected. RF testing is performed on a sample basis to verify conformance to datasheet guaranteed specifications. Consult factory for more information. Conversion Loss Isolation (db) LO-RF LO-IF RF-IF Parameter LO RF IF Min Typ Max LO drive level (dbm) (GHz) (GHz) (GHz) 18 DC- 8 (8.5) Input 1 db Compression (dbm) +9 Config. A: +13 to + See Plots +9 Config. B: +1 to +17 Input Two-Tone Third Order Intercept Point (dbm) +1 Config. A: +13 to + +19 Config. B: +1 to +17 Part Number Options Please specify diode level and package style by adding to model number. Package Styles Examples Connectorized 1, 3 S MM1-185HCH-, MM1-185HS Chip, 3 (RoHS) CH- MM1-185 (Model) H (Diode Option) 1 Connectorized package consists of chip package wire bonded to a substrate, equivalent to an evaluation board. Chip package connects to external circuit through wire bondable gold pads. 3 Note: For port locations and I/O designations, refer to the drawings on page of this document. CH- (Package) 15 Vineyard Court, Morgan Hill, CA 9537 Ph: 48.778.4 Fax 48.778.43 info@markimicrowave.com
Page MM1-185H LO/RF 18 to 5 GHz IF DC to GHz RF Input/ Output 1 3 IF Input/ Output LO Input 1 3 IF Input/ Output LO Input RF Input/Output 1. /B refer to the same part number (MM1-185H) used in one of two different ways for optimal spurious performance. For the lowest conversion loss, use the mixer in (port as the LO input, port 1 as the RF input or output). If you need to use a lower LO drive, use the mixer in (port as the RF input or output, port 1 as the LO input). For optimal spurious suppression, experimentation or simulation is required to choose between and B. For more information, see here..8.58 [1.48] [.19].5.4 [.1] [.9].5 [.13] min clearance.3 [.59] 3 1.3 [.59].46 [1.18] PROJECTION INCH [MM] Function Port Number Port Number LO IF 3 RF 1 1 3.6 [.15] x.3 [.76] Bonding Pad, 3 PL 1. CH Substrate material is.4 thick GaAs.. I/O traces and ground plane finish are microns Au. 3. Wire Bonding - Ball or wedge bond with.5 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 15 C and a ball bonding force of 4 to 5 grams or wedge bonding force of 18 to grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <.31 mm (1 mils)..4 [.1] PROJECTION INCH [MM] XXX=±.5 XX=±.1.4 [1.7].16 [4.6].56 [14.].4 [6.1].5.436 [13.1] [11.7].6 [6.6] Function Connector Port Number Port Number Type RF 1 1.85 mm Female LO 1 1.85 mm Female IF 3 3 SMA Female Note: S-Package Connectors are not removeable 1 3 MM1185H D/C.8 [7.11].6 [1.5] Rad 4 PL Ø.67 Thru, 4 PL [1.7]. [5.].39 [9.9]
Page 3 DC-4 GHz Input MM1-185 I 4 GHz LO Source L R Typical Performance Tuned Output at 4 GHz -1-1 -14 MM1-185H LO/RF 18 to 5 GHz IF DC to GHz Tuner Conversion Loss (db) 1-16 -18-4 6 8 1 1 14 16 18 4 Input Frequency (GHz) 3 Input Tuner IP3: 4 GHz RF Output (dbm) 3 Output Tuner IP3: 4 GHz RF Output (dbm) 5 5 15 15 1 1 5 4 6 8 1 1 14 16 18 4 Input Frequency (GHz) 5 4 6 8 1 1 14 16 18 4 Input Frequency (GHz) -1-1 -14 Conversion Loss: 1 MHz IF (db) 1-16 -18-15 5 3 35 4 45 5 55 6 65-1 - -3-7 LO to RF Isolation (db) 15 19 3 7 31 35 39 43 47 51 LO Frequency (GHz) Relative IF Response (db) Relative IF Response (db) - - -1 4 GHz RF - 4 GHz RF - 5 1 15 5-1 45 GHz RF - 45 GHz RF - 5 1 15 5 IF Frequency (GHz) IF Frequency (GHz)
Page 4 MM1-185H LO/RF 18 to 5 GHz IF DC to GHz Typical Performance -1-1 Conversion Loss vs. LO Power: 1 MHz IF (db) 1-14 -16 +17 dbm +13 dbm -18 +1 dbm +9 dbm - 15 5 3 35 4 45 5 55 6 65-1 -1 Conversion Loss vs. LO Power: 1 MHz IF (db) 1-14 -16 +15 dbm +1 dbm -18 +11 dbm +1 dbm - 15 5 3 35 4 45 5 55 6 65 3 Input IP3: 1 MHz IF (dbm) 3 Output IP3: 1 MHz IF (dbm) 5 5 15 15 1 1 5 15 5 3 35 4 45 5 55 6 5 15 5 3 35 4 45 5 55 6 LO to IF Isolation (db) RF to IF Isolation (db) -1-1 - - -3-3 15 19 3 7 31 35 39 43 47 51 LO Frequency (GHz) 15 19 3 7 31 35 39 43 47 51 RF Return Loss (db) LO Return Loss (db) -1-1 -15 - -15 - -5 15 5 3 35 4 45 5 55 6 65-5 15 5 3 35 4 45 5 55 6 65 LO Frequency (GHz)
Page 5 Typical Performance MM1-185H LO/RF 18 to 5 GHz IF DC to GHz IF Return Loss (db) IF Return Loss (db) -1-1 -15-15 - - -5-3 4 GHz RF - 4 GHz RF - 5 1 15 5-5 -3 45 GHz RF - 45 GHz RF - 5 1 15 5 IF Frequency (GHz) IF Frequency (GHz) -1 - -3-7 Even LO Harmonic to RF Isolation (db) xlo xlo -9 18 6 3 34 38 4 46 5-1 - -3-7 LO Output Frequency (GHz) -9 18 6 3 34 38 4 46 5-1 - -3-7 RF x LO Spurious Suppression (dbc) -1 dbm RF Input RF Input Frequency (GHz) IF x LO Spurious Suppression (dbc) -1 dbm IF Input -9 18 6 3 34 38 4 46 5 RF Output Frequency (GHz) -1 - -3-7 Even LO Harmonic to IF Isolation (db) xlo xlo -9 18 6 3 34 38 4 46 5-1 - -3-7 LO Output Frequency (GHz) IF x 1LO Spurious Suppression (dbc) -1 dbm IF Input -9 18 6 3 34 38 4 46 5-1 - -3-7 RF Output Frequency (GHz) 3IF x LO Spurious Suppression (dbc) -1 dbm IF Input -9 18 6 3 34 38 4 46 5 RF Output Frequency (GHz)
Page 6 MM1-185H LO/RF 18 to 5 GHz IF DC to GHz Downconversion Spurious Suppression Spurious data is taken by selecting RF and LO frequencies (+mlo+nrf) within the RF/LO bands, to create a spurious output within the IF output band. The mixer is swept across the full spurious band and the mean is calculated. The numbers shown in the table below are for a -1 dbm RF input. Spurious suppression is scaled for different RF power levels by (n-1), where n is the RF spur order. For example, the RFxLO spur is 67 dbc for the A configuration for a -1 dbm input, so a - dbm RF input creates a spur that is (-1) x (-1 db) db lower, or 77 dbc. Typical Downconversion Spurious Suppression (dbc): A Configuration (B Configuration) 4-1 dbm RF Input xlo 1xLO xlo 3xLO 4xLO 5xLO 1xRF 6 (3) Reference 6 (51) 9 (11) 3 (58) N/A xrf 78 (75) 6 (43) 67 (65) 69 (46) 64 (71) 64 (49) 3xRF 9 (93) 53 (58) 75 (86) 7 (69) 8 (93) 73 (78) 4xRF N/A 88 (11) 1 (1) 11 (9) 114 (114) 116 (98) 5xRF N/A N/A 99 (116) 117 (118) 1 (16) 117 (116) Upconversion Spurious Suppression Spurious data is taken by mixing an input within the IF band, with LO frequencies (+mlo+nif), to create a spurious output within the RF output band. The mixer is swept across the full spurious output band and the mean is calculated. The numbers shown in the table below are for a -1 dbm IF input. Spurious suppression is scaled for different IF input power levels by (n-1), where n is the IF spur order. For example, the IFx1LO spur is typically 67 dbc for the A configuration for a -1 dbm input, so a - dbm IF input creates a spur that is (-1) x (-1 db) db lower, or 77 dbc. Typical Upconversion Spurious Suppression (dbc): A Configuration (B Configuration) 4-1 dbm IF Input xlo 1xLO xlo 3xLO 4xLO 5xLO 1xIF 18 (8) Reference 1 (49) 8 (9) 33 (57) N/A xif 65 (41) 67 (67) 68 (43) 64 (66) 61 (47) 71 (73) 3xIF 76 (91) 69 (65) 71 (87) 66 (64) 74 (88) 64 (66) 4xIF 11 (11) 17 (16) 18 (87) 11 (113) 14 (95) 11 (18) 5xIF 1 (134) 116 (18) 11 (119) 1 (1) 11 (14) 18 (113)
Page 6 Mounting and Bonding Recommendations MM1-185H LO/RF 18 to 5 GHz IF DC to GHz Marki MMICs should be attached directly to a ground plane with conductive epoxy. The ground plane electrical impedance should be as low as practically possible and the epoxy should have high thermal conductivity. This will prevent resonances and permit the best possible electrical performance. Datasheet performance is only guaranteed in an environment with a low electrical impedance ground. MMICs with high power dissipation, particularly those with high DC power requirements, also require a thermally conductive ground plane with a thermally conductive epoxy attachment. Mounting - To epoxy the chip, apply a minimum amount of conductive epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip. Cure epoxy according to manufacturer instructions. Wire Bonding - Ball or wedge bond with.5 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 15 C and a ball bonding force of 4 to 5 grams or wedge bonding force of 18 to grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <.31 mm (1 mils). Circuit Considerations 5 ohm transmission lines should be used for all high frequency connections in and out of the chip. Wirebonds should be kept as short as possible, with multiple wirebonds recommended for higher frequency connections to reduce parasitic inductance. In circumstances where the chip more than.1 thinner than the substrate, a heat spreading spacer tab is optional to further reduce bondwire length and parasitic inductance. Handling Precautions General Handling: Chips should be handled with a vacuum collet when possible, or with sharp tweezers using well trained personnel. The surface of the chip is fragile and should not be contacted if possible. Static Sensitivity: GaAs MMIC devices are subject to static discharge, and should be handled, assembled, tested, and transported only in static protected environments. Cleaning and Storage: Do not attempt to clean the chip with a liquid cleaning system or expose the bare chips to liquid. Once the ESD sensitive bags the chips are stored in are opened, chips should be stored in a dry nitrogen atmosphere. Bonding Diagram LO/RF Minimum Space Gap/ Wirebond Length Multiple Wirebonds for Reduced Inductance IF LO/RF
Page 8 MM1-185H LO/RF 18 to 5 GHz IF DC to GHz Port Description DC Interface Schematic Port 1 Port 1 is DC open and AC matched to 5 Ohms from 18 to 5 GHz. Blocking capacitor is optional. Port Port is DC open and AC matched to 5 Ohms from 18 to 5 GHz. Blocking capacitor is optional. Port 3 Port 3 is DC coupled to the diodes. Blocking capacitor is optional. P3 Absolute Maximum Ratings Port 1 DC Current Port DC Current Port 3 DC Current RF Power Handling (RF+LO) Operating Temperature Storage Temperature Parameter Maximum Rating 1 ma 1 ma.8 ma +5 dbm at +5 C, derated linearly to +1 dbm at +1 C 5ºC to +1ºC 5ºC to +15ºC DATA SHEET NOTES: 1. Mixer Conversion Loss Plot IF frequency is 1 MHz.. Mixer Noise Figure typically measures within.5 db of conversion loss for IF frequencies greater than 5 MHz. 3. Conversion Loss typically degrades less than.5 db at +1 C and improves less than.5 db at 5 C. 4. Unless otherwise specified, data is taken with +15 dbm LO drive. 5. Specifications are subject to change without notice. Contact Marki Microwave for the most recent specifications and data sheets. 6. Catalog mixer circuits are continually improved. Configuration control requires custom mixer model numbers and specifications. Marki Microwave reserves the right to make changes to the product(s) or information contained herein without notice. Marki Microwave makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Marki Microwave assume any liability whatsoever arising out of the use or application of any product. Marki Microwave, Inc. 15 Vineyard Court, Morgan Hill, CA 9537 Ph: 48.778.4 Fax 48.778.43 info@markimicrowave.com www.markimicrowave.com