RF1119ATR7. SP4T (Single Pole Four Throw Switch) Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

Similar documents
QPC6222SR GENERAL PURPOSE DPDT TRANSFER SWITCH. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

QPC1022TR7. Broad Band Low Distortion SPDT Switch. General Description. Product Features. Functional Block Diagram RF1612.

TGL2209 SM 8 12 GHz 50 Watt VPIN Limiter

TGL2210-SM_EVB GHz 100 Watt VPIN Limiter. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information

QPL6216TR7 PRELIMINARY. Product Description. Feature Overview. Functional Block Diagram. Applications. Ordering Information. High-Linearity SDARS LNA

TGP2109-SM GHz 6-Bit Digital Phase Shifter. Product Description. Functional Block Diagram. Product Features. Applications. Ordering Information

TGA2218-SM GHz 12 W GaN Power Amplifier

QPL GHz GaN LNA

TGP2108-SM 2.5-4GHz 6-Bit Digital Phase Shifter

TGA2239. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information. Part No.

AH125 ½ W High Linearity InGaP HBT Amplifier

QPA2626D GHz Low Noise Amplifier

TGA GHz 5 W GaN Power Amplifier

QPB9328SR. Dual-Channel Switch LNA Module. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

QPB7425SR. 75 Ω 25 db CATV Amplifier ( MHz) Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

TGL2203 Ka-Band 1 W VPIN Limiter

TGP Bit Digital Phase Shifter

TGA2958-SM GHz 2 W GaN Driver Amplifier

TGA2807-SM TGA2807. CATV Ultra Linear Gain Amplifier. Applications. Ordering Information. CATV EDGE QAM Cards CMTS Equipment

TGA2627-SM 6-12 GHz GaN Driver Amplifier

TGA2238-CP 8 11 GHz 50 W GaN Power Amplifier

TGA GHz 30W GaN Power Amplifier

TGC2510-SM. Ku-Band Upconverter. Product Description. Product Features. Function Block Diagram. Ordering Information. Applications

SKY LF: GPS/GLONASS/Galileo/BDS Low-Noise Amplifier

TGA4541-SM Ka-Band Variable Gain Driver Amplifier

Product Specification PE613050

TGC2610-SM 10 GHz 15.4 GHz Downconverter

SKY : Shielded Low-Noise Amplifier Front-End Module with GPS/GNSS/BDS Pre-Filter

Absolute Maximum Ratings Parameter Rating Unit V DD, V1, V2 6.0 V Maximum Input Power (DC to 2.5GHz, 2.5V Control) 28 dbm Operating Temperature -40 to

SKY LF: GHz Ultra Low-Noise Amplifier

SKY LF: GHz 4x2 Switch Matrix with Tone/Voltage Decoder

TGA GHz 1W Power Amplifier

SKY LF: GHz Two-Stage, High Linearity and High Gain Low-Noise Amplifier

Product Specification PE4151

RF1193A SP10T ANTENNA SWITCH MODULE - QUADBAND GSM, QUADBAND UMTS

L, S-band Medium Power SPDT Switch

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

L, S-band Medium Power SPDT Switch

Product Specification PE613010

TGC4546-SM GHz Upconverter with Quadrupler

SKY : Low-Noise Amplifier Front-End Module with GPS/GNSS/BDS Pre-Filter

6GHz Medium Power SPDT Switch

SKY LF: 1.5 to 3.8 GHz Two-Stage, High-Gain Low-Noise Amplifier

Features. = +25 C, 50 Ohm System

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

Absolute Maximum Ratings Parameter Rating Unit VDD, CTLA, CTLB, CTLC, CTLD 6.0 V Maximum Input Power TX1 (GSM850/900), 50Ω +37(T AMB =25 C) dbm TX2 (G

10 GHz to 26 GHz, GaAs, MMIC, Double Balanced Mixer HMC260ALC3B

SKY : 2.4 GHz, ac Switch/Low-Noise Amplifier Front-End

GND RFC GND. Product Description. Ordering Information. GaAs MESFET Si BiCMOS Si CMOS

GaAs, MMIC Fundamental Mixer, 2.5 GHz to 7.0 GHz HMC557A

SKY : MHz High Linearity, Single Up/Downconversion Mixer

1.5 GHz to 4.5 GHz, GaAs, MMIC, Double Balanced Mixer HMC213BMS8E

HMC581LP6 / 581LP6E MIXERS - SMT. HIGH IP3 RFIC DUAL DOWNCONVERTER, MHz. Typical Applications. Features. Functional Diagram

Features. Parameter Min. Typ. Max. Min. Typ. Max. Units

6 GHz to 26 GHz, GaAs MMIC Fundamental Mixer HMC773A

RF2360 LINEAR GENERAL PURPOSE AMPLIFIER

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

MAMX Sub-Harmonic Pumped Mixer GHz Rev. V1. Functional Schematic. Features. Description. Pin Configuration 1

TCP-3039H. Advance Information 3.9 pf Passive Tunable Integrated Circuits (PTIC) PTIC. RF in. RF out

HMC485MS8G / 485MS8GE. Features OBSOLETE. = +25 C, LO = 0 dbm, IF = 200 MHz*, Vdd= 5V

HMC814LC3B FREQ. MULTIPLIERS - ACTIVE - SMT. SMT GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, GHz OUTPUT. Features. Typical Applications

HMC412MS8G / 412MS8GE

Features. Parameter Min. Typ. Max. Units

OBSOLETE HMC215LP4 / 215LP4E. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram

DATA SHEET. NEC's L-BAND 4W HIGH POWER SPDT SWITCH IC

Features. = +25 C, Vdd = +7V, Idd = 820 ma [1]

OBSOLETE HMC422MS8 / 422MS8E. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram

0.5 to 6.0 GHz SPDT SWITCH

Surface Mount Multilayer Ceramic Capacitors for RF Power Applications

GaAs MMIC High Dynamic Range Mixer

PD18-73/PD18-73LF: GHz Two-Way 0 Power Splitter/Combiner

CMD197C GHz Distributed Driver Amplifier

HMC958LC5 HIGH SPEED LOGIC - SMT. Typical Applications. Features. Functional Diagram. General Description

HIGH-LINEARITY TRIPLE-BALANCED MIXERS T3-0838

SP6T RF Switch JSW6-23DR Ω High Power 3W 5 to 2000 MHz. The Big Deal

SKY : MHz High Linearity, Single Up/Downconversion Mixer

Features. = +25 C, Vdd = +4.5V, +4 dbm Drive Level

= +25 C, IF= 100 MHz, LO = +15 dbm*

SKY : 5 GHz, ac/n Low-Noise Amplifier

OBSOLETE HMC423MS8 / 423MS8E MIXERS - DBL-BAL - SMT. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications.

No need for external driver, saving PCB space and cost.

= +25 C, IF= 100 MHz, LO = +17 dbm*

FX5210 FX5210 VIO VDD SCLK SDATA GHz DP10T Switch with MIPI RFFE Interface for Diversity Applications. Features. Description.

Features. Parameter Min. Typ. Max. Units

Features. = +25 C, 50 Ohm System

GaAs MMIC Double Balanced Mixer

50~100MHz. 100~210MHz C2 1nF. Operating Case Temperature -40 to +85 Storage Temperature -55 to +155 Junction Temperature +126 Operating Voltage

Features OBSOLETE. = +25 C, IF = 1.45 GHz, LO = +13 dbm [1]

Product Description. Ordering Information. GaAs HBT GaAs MESFET. InGaP HBT

General purpose low noise wideband amplifier for frequencies between DC and 2.2 GHz

Absolute Maximum Ratings Parameter Rating Unit Max Supply Current (I C1 ) at V CC typ. 150 ma Max Supply Current (I C2 ) at V CC typ. 750 ma Max Devic

* Notices. Operating Case Temperature -40 to +85 Storage Temperature -55 to +155 Junction Temperature +126 Operating Voltage.

GaAs MMIC Double Balanced Mixer

STEVAL-TDR007V1. 3 stage RF power amplifier demonstration board using: PD57002-E, PD57018-E, 2 x PD57060-E. Features. Description

General purpose low noise wideband amplifier for frequencies between DC and 2.2 GHz

Features OBSOLETE. = +25 C, As a Function of LO Drive. LO = +10 dbm. IF = 70 MHz

Parameter Min. Typ. Max. Min. Typ. Max. Units

Features. = +25 C, LO = 0 dbm, Vcc = Vcc1, 2, 3 = +5V, G_Bias = +2.5V *

SKY LF: 698 to 915 MHz Low-Noise Power Amplifier Driver

GaAs MMIC Double Balanced Mixer

Transcription:

Product Overview The is a single-pole four-throw (SP4T) switch designed for static Antenna/impedance tuning applications which requires very low insertion loss and high power handling capability with a minimum of DC power consumption. The high linearity performance achieved by the make it ideal for use in multi-mode GSM/GPRS/EDGE/WCDMA/LTE applications. The is controlled by a standard GPIO interface for easy control. The includes an integrated LDO (Low Drop Out) regulator, which enables operation over a very wide supply range. All pins are ESD protected to ensure 2 kv HBM ESD tolerance. The is packaged in an ultra-compact 1.6 mm x 1.6 mm, 11-pin, WLCSP package. Functional Block Diagram Package: WLCSP, 11-pin, 1.6 mm x 1.6 mm Key Features Low insertion loss: 0.3 db at 1 GHz High peak voltage handling High linearity Ultra small package: WLCSP, 11-pin, 1.6 mm x 1.6 mm No external DC blocking capacitor required (Unless external DC is applied to the RF ports) Wide VDD voltage range 2 kv HBM ESD protection at all ports Applications Antenna Tuning Band Switching Impedance Tuning Ordering Information Part Number PCBA-410 SR TR7 Description Evaluation Board 100-pc 7 Reel 2500-pc, 7 Tape and Reel DS20161102 Subject to change without notice 1 of 13 www.qorvo.com

Absolute Maximum Ratings Parameter Rating Unit Power supply voltage, VDD 5.0 V Control voltage, VCTL 3.0 V Enable voltage, VEN 5.0 V ESD voltage HBM VESD 2 kv Storage temperature Tst -40 to 150 C Operating temperature TOP -30 to 85 C Max differential RF voltage between RFC and RF ports VRF 39 VP RF Input power 50 Ω 41.8 dbm Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. Notes: 1. No operation above 6.0 volts. 2. Average power + PAR combined, 50 Ω, 25 C. 3. Defined as measured at ground plane under or adjacent to chip. Nominal Operating Parameters Parameter Specification Min. Typ. Max. Unit Operating Frequency 400 3000 MHZ Supply Voltage VDD 2.4 3.5 4.5 V Supply Current IDD Condition 85 100 μa Active Mode 5 10 μa EN Control Voltage High, VHIGH_EN 1.2 1.8 VDD V Control Voltage High, VHIGH_CTL 1.2 1.8 2.8 V Control voltage Low, VLOW 0.0 0.0 0.45 V Control current High, IHIGH 5 μa Control current Low, ILOW 5 μa Nominal conditions unless otherwise specified. VDD = 3.5 V, VCTL1 & VCTL2 = 1.8 V/0 V, VEN = 1.8 V, Temp = 25 C, 50 Ω. Low Power Mode, VEN, VCTL1 & VCTL2 = 0 V DS20161102 Subject to change without notice 2 of 13 www.qorvo.com

Electrical Specifications Linear Parameters Parameter Insertion Loss (RFC to RFx) Switch ON Isolation (RFC to RFx) Switch OFF Return Loss (RFC to RFx) Switch ON RON (RFC to RFx) Switch ON COFF (RFC to RFx) Switch OFF Specification Min. Typ. Max. Unit Condition 0.30 0.45 db 1000 MHZ 0.40 0.55 db 1910 MHz 0.50 0.70 db 2700 MHz 26.0 30.0 db 700 MHz 25.0 30.0 db 1000 MHz 18.0 21.5 db 1910 MHz 16.0 19.5 db 2700 MHz 20.0 25.0 db 1000 MHz 1.7 2.1 Ω 0.14 0.18 pf Nominal conditions unless otherwise specified. VDD = 3.5 V, VCTL1 & VCTL2 = 1.8 V/0 V, VEN = 1.8 V, Temp = 25 C, 50 Ω Start-up time, tstart-up 6 20 μs 50% VDD to large signal fully compliant ON Switching speed, ton 2 5 μs 50% control to 90% RF ON OFF Switching speed, toff 2 5 μs 50% control to 10% RF OFF Electrical Specifications Nonlinear Parameters Parameter Specification Min. Typ. Max. Unit Second Harmonics -104-90 dbc Third Harmonics -90-75 dbc Second Harmonics -104-85 dbc Third Harmonics -90-75 dbc Condition Nominal conditions unless otherwise specified. VDD = 3.5 V, VCTL1 & VCTL2 = 1.8 V/0 V, VEN = 1.8 V, Temp = 25 C, 50 Ω 915 MHz, Pin = 35 dbm 1910 MHz, Pin = 33 dbm IIP2, Low 110 120 dbm Refer to IIP2 conditions table IIP2, High 120 130 dbm Refer to IIP2 conditions table IIP3 70 75 dbm Refer to IIP3 conditions table Receive Spurious 700 2700 MHz -117-112 dbm No RF Signal -112-107 dbm RF 915 MHz at 35 dbm -112-107 dbm RF 1910 MHz at 33 dbm DS20161102 Subject to change without notice 3 of 13 www.qorvo.com

Control Logic State VEN VCTL1 VCTL2 RF Path RF1 VHIGH_EN VLOW VLOW RFC to RF1 RF2 VHIGH_EN VLOW VHIGH_CTL RFC to RF2 RF3 VHIGH_EN VHIGH_CTL VLOW RFC to RF3 RF4 VHIGH_EN VHIGH_CTL VHIGH_CTL RFC to RF4 LPM [1] VLOW X X Low power mode Note [1] RF signal should not be applied in the low power mode. IIP2 Test Conditions Band In-Band Freq CW Tone 1 CW Tone 2 [MHz] [MHz] [dbm] [MHz] [dbm] Band I Low (IMT) 2140 1950 +20 190-15 Band I High (IMT) 2140 1950 +26 4090-20 Band II Low (PCS) 1960 1880 +20 80-15 Band II High (PCS) 1960 1880 +26 3840-20 Band V Low (Cell) 881.5 836.5 +20 45-15 Band V High (Cell) 881.5 836.5 +26 1718-20 Band VIII Low 942.5 897.5 +20 45-15 Band VIII High 942.5 897.5 +26 1840-20 IIP3 Test Conditions Band In-Band Freq CW Tone 1 CW Tone 2 [MHz] [MHz] [dbm] [MHz] [dbm] Band I High (IMT) 2140 1950 +20 1760-15 Band II High (PCS) 1960 1880 +20 1800-15 Band V High (Cell) 881.5 836.5 +20 791.5-15 Band VIII High 942.5 897.5 +20 852.5-15 DS20161102 Subject to change without notice 4 of 13 www.qorvo.com

Pin Configuration Pin Description Pin Name Details 1 RF1 RF port 1 2 RF2 RF port 2 3 GND Ground 4 VDD Voltage Supply 5 CTL1 Control Voltage 1 6 CTL2 Control Voltage 2 7 EN Enable 8 GND Ground 9 RF4 RF port 4 10 RF3 RF port 3 11 RFC Common RF port DS20161102 Subject to change without notice 5 of 13 www.qorvo.com

Evaluation Board Schematic Parts List Part Number Part Part Description U1, SP4T Switch J1, J2, J3, J4 & J5 SMA connector Edge mount 0.068 SMA connector C3 100 pf capacitor (0402) 100 pf de-coupling capacitor C1, C2, C4 & C5 NP No Placement - Do not populate R1, R2, R3 & R4 0 Ω jumper (0402) 0 Ω resistor R5 NP No Placement - Do not populate P1 2x4 RA header 2x4 right angled header with 0.1 spacing Application Guidelines Decoupling Capacitors = The decoupling capacitor on VDD may be used for noise reduction. The value of the de-coupling capacitor should be selected based on the application. DC Blocking Capacitors = DC blocking capacitor is not required on an RF port if no DC voltage exists on that port. DS20161102 Subject to change without notice 6 of 13 www.qorvo.com

Package Outline and Branding Drawing (Dimensions in Millimeters) DS20161102 Subject to change without notice 7 of 13 www.qorvo.com

Evaluation Board Layout Top Layer 1 Layer 2 Layer 3 Bottom EVB Layer Information DS20161102 Subject to change without notice 8 of 13 www.qorvo.com

PCB Design Requirements PCB Metal Land Pattern PCB Soldermask Pattern DS20161102 Subject to change without notice 9 of 13 www.qorvo.com

PCB Stencil Pattern DS20161102 Subject to change without notice 10 of 13 www.qorvo.com

Power ON and OFF Sequence It is very important that the user adheres to the correct power-on/off sequence in order to avoid damaging the device. The control signals CTL1 and CTL2 should be set to 0 V unless VDD & EN are set in the operating voltage range. RF signal should not be applied on any of the RF ports when the VDD is below 2.4 V and the EN is set below VHIGH_EN. Power ON 1. Apply voltage supply VDD 2. Apply Enable VEN (VEN can be connected to VDD and applied at the same time) 3. Apply controls CTL1 and CTL2 4. Wait 20 μs or greater and then apply RF Change switch position from one RF port to another 1. Remove RF 2. Change controls CTL1 and CTL2 to set the switch to desired RF port 3. Wait 5 μs or greater and then apply RF Power OFF 1. Remove RF 2. Remove controls CTL1 & CTL2 3. Remove VEN 4. Remove VDD DS20161102 Subject to change without notice 11 of 13 www.qorvo.com

RoHS Compliance This part is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU. This product also has the following attributes: Lead free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free Pb SVHC Free DS20161102 Subject to change without notice 12 of 13 www.qorvo.com

REVISION HISTORY Revision Release Date Description DS140224 February 2014 First production release. DS151020 October 2015 Add RON and COFF limits. Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Web: www.qorvo.com Tel: 1-844-890-8163 Email: customer.support@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information contained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 2016 Qorvo, Inc. Qorvo is a registered trademark of Qorvo, Inc. DS20161102 Subject to change without notice 13 of 13 www.qorvo.com