Research & Study Detector Group Single Photoelectron timing resolution of SiPM XVII SuperB Workshop - Kick Off meeting May 29 th - June 1 st 2011 Isola d Elba Véronique Puill, IN2P3-LAL -GRED C. Bazin, D. Breton, L. Burmistrov, V. Chaumat, N. Dinu, J. Maalmi, A. Stocchi, Jean-François Vagnucci 1
Plan List of the SiPMs studied at LAL Basic characterization of SiPM : operational voltage range, gain, dark noise, variation with temperature. Test bench for timing measurement Timing resolution measurement principle SPTR in function of the bias voltage SPTR in function of the wavelength SPTR in function of the temperature 2
1 mm 2 SiPMs characterized at LAL AdvanSiD (F.B.K) Reference Pixel nb Pixel size (µm) V BD (V) ASD-SiPM1S-M-50 400 50 x 50 29 Hamamatsu MPPC S10362-11-25 0 25 x 25 69.2 S10362-11-50 400 50 x 50 68.3 S10362-11-100 100 100 x 100 68.7 10-50S-BK 4S 400 50 x 50 69.1 10-100S-FS 100 100 x 100 69.1 SensL SPM SPM1020X13 848 20 x 20 27 SPM1035X13 400 35 x 35 27.5 Non commercial products 3
9 mm 2 SiPMs characterized at LAL AdvanSiD (F.B.K (3 x 3 mm²) Reference Pixel nb Pixel size (µm) V BD (V) ASD-SiPM3S-M-50 400 50 x 50 31 Hamamatsu MPPC (3 x 3 mm²) S10362-33-25 14400 25 x 25 69.5 S10362-33-50 3600 50 x 50 69.5 S10362-33-100 900 100 x 100 69.2 SensL SPM (2,85 x 2,85 mm²) SPM-3035X13 3640 35x 35 27 Non commercial products 4
Determination of the operational voltage range of the SiPMs Dark Monitor Temperature Test bench Source-meter Stable voltage bias (0 200 V, accuracy : 1 µv) Precise current measurement (1 pa) SiPM Pt100 Amplifier Digital Tektronix Oscilloscope (500 MHz) Counter Digital Multimeter Automatic acquisition PC running LabView & C++ programs climatic chamber (0 40 C accuracy = 0.1 C) Measurements of V BD, gain, DCR 5
Vbd (V) Evolution of V BD with temperature 70 69,5 Hamamatsu 100µm V bd = 0,0574xT + 67,542 MPPC 1 mm² Hamamatsu 50µm V bd = 0,0565xT + 67,219 69 68,5 Hamamatsu 25µm V bd = 0,0557xT + 67,05 68 67,5 67 66,5-10 0 10 20 30 40 50 60 Température ( C) Breakdown voltage increases with the temperature dv BD /dt ~ 56 mv/ C 6
The Timing Test Bench Dark box (1 m 3 ) Pilas laser diode (405nm, 470 nm, 633 nm, 40-50 ps) lens + neutral filter X SiPM SSiPM Oscillo Lecroy WAVEPRO 740ZI 4 GHz, 40 Gs/s, 32 Mpts/channel PC Acquisition Laser diode Driver jitter 3 ps calibrated detectors (PIN, PMT) STOP detector Ref PMT Y START laser driver Z 3D translation tables Temperature variation = 0.1 C WaveCatcher cable (delay) trigger laser 7
Measurement principle of the SiPM timing resolution Δt SiPM trigger laser threshold for the laser = 50 % threshold = 50 % SSiPM Measurement of the time between the laser and the SiPM signals distribution of the Δt 8
DCR (Hz) Ireverse (A) Gain Choice of the SPTR measurement points 1,E-03 1,E-04 1,E-05 1,E-06 1,E-07 1,E-08 1,E-09 1,E-10 1,E-11 1,0E+06 9,0E+05 8,0E+05 7,0E+05 6,0E+05 5,0E+05 4,0E+05 3,0E+05 2,0E+05 Ireverse 66 67 68 69 70 71 72 Vbias DCR 20 C 0,4 0,6 0,8 1 1,2 1,4 1,6 ΔV (V) = Vbias - VBD 3,5E+06 3,0E+06 2,5E+06 2,0E+06 1,5E+06 1,0E+06 5,0E+05 0,0E+00 e.g : MPPC 10-100S-FS 20 C VBD (V) Gain 68,8 69,3 69,8 70,3 70,8 71,3 69,8 69,7 69,6 69,5 69,4 69,3 69,2 69,1 69 VBD 20 C Vbias Vbd = 5,9E -02 x temp+ 67,94 19 21 23 25 27 29 31 Temperature ( C) Correction of the bias voltage if the temperature changes inside the test bench to maintain a constant gain 9
SiPM illumination conditions High power of the laser diode pulse width ~40 ps-50 ps depending on the laser head neutral filters ~ 1 photon/pulse/mm² at the SiPM output : majority of 0, few 1 photo-electron + small quantity of signal 2 p.e due to cross-talk 1 p.e 2 p.e = cross-talk 10
Contribution to the timing resolution of the detection chain Pilas pulsed laser diode (nm) 405 467 635 Pulse laser width (ps) 38 50 40 Pilas driver : jitter 3 ps Timing resolution of the LECROY scope 1 ps Timing resolution of the Wavecatcher 8 ps 11
1 mm² SiPM SPTR in function of the applied voltage 450 400 412 429 SiPM SPTR 1 mm² - 20 C - 467 nm S10362-11-25 S10362-11-50 S10362-11-100 MPPC-BK-4S (50 µm) 350 351 MPPC 10-100-FS (100 µm) ASD-1-S-50 300 310 SPM1020 SPM1035 250 200 210 201 212 195 226 188 150 141 163 153 100 0,5 1 1,5 2 2,5 3 Vbias-VBD (V) VDB : breakdown voltage 12
9 mm² SiPM SPTR in function of the applied voltage 550 533 SiPM SPTR 9 mm² - 20 C - 467 nm 500 S10362-33-25 S10362-33-50 450 400 395 S10362-33-100 ASD-9-S-50 350 300 309 299 250 272 240 200 150 168 100 0,25 0,75 1,25 1,75 2,25 2,75 3,25 3,75 4,25 Vbias-VBD (V) SPM-3035X13 too noisy to measure the SPTR 13
SiPM SPTR = f( ) @ 20 C and Vbias max SPTR MPPC 1 mm² 50 & 100 µm 200 190 180 170 150 140 130 120 110 100 168 141 143 143 MPPC 10-50S @ 2,4 V MPPC 10-100S @ 1,4 V 147-12 % 400 450 500 550 600 650 lamnda (nm) SPTR Sensl 1 mm² 20 & 35 µm 240 220 200 180 171 178 199 + 16 % 140 120 100 151 162 SPM1035X13 @ 2,4 V SPM1020X13 @ 2,4 v 400 450 500 550 600 650 lamnda (nm) 14
SiPM SPTR = f( ) @ 20 C and Vbias max SPTR ASD SiPM1S-M-50 170 150 130 110 139 + 32 % 90 70 105 ASD 1M-50 @ 1 V 50 400 450 500 550 600 650 lamnda (nm) 280 260 242 240 220 200 180 140 120 100 242 SPTR MPPC 25 & 100 µm 9 mm² 225 231 400 450 500 550 600 650 lamnda (nm) MPPC 10362-33-25 @ 4 V MPPC 10362-33-100 @ 1 V 216 196-20 % 15
1 mm² SiPM SPTR = f(temperature) @ Vbias max 200 SPTR MPPC-10-50S - 1 mm² 180 140 142 135 141 151 135 120 100 80 0 5 10 15 20 25 30 35 température ( C) 405 nm 467 nm 635 nm 200 180 140 120 100 80 SPTR MPPC-10-100S - 1 mm² 162 168 157 147 405 nm 467 nm 635 nm 0 5 10 15 20 25 température ( C) 16
1 mm² SiPM SPTR = f(temperature) @ Vbias max 200 SPTR SPM1020x13-1 mm² 180 140 120 151 144 133 162 149 151 405 nm 12 % 100 80 467 nm 635 nm 0 5 10 15 20 Linéaire 25 (405 nm) température ( C) 220 SPTR SPM1035x13-1 mm² 200 180 140 173 186 199 178 171 164 151 15% 120 100 80 405 nm 467 nm 635 nm 0 5 10 15 20 25 température ( C) 17
1 mm² SiPM SPTR = f(temperature) @ Vbias max 150 SPTR ASD-SiPM 1S-M-50-1 mm² 140 139 130 134 120 110 100 90 80 105 101 405 nm 635 nm 0 5 10 15 20 25 température ( C) 9 mm² SiPM SPTR = f(temperature) @ Vbias max ASD 9S-M-50 and SPM-3035X13 (Sensl) too difficult to measure at 1 p.e 18
9 mm² SiPM SPTR = f(temperature) @ Vbias max 280 SPTR MPPC S10362-33-100-9 mm² 260 240 220 200 180 140 120 100 80 232 0 5 10 15 20 25 température ( C) 405 nm 467 nm 635 nm 242 231 196 SPTR MPPC S10362-33-25-9 mm² 280 260 240 220 200 180 140 120 100 80 235 0 5 10 15 20 25 température ( C) 405 nm 467 nm 635 nm 242 225 216 19
Conclusion Area (mm²) Producer Pixel size (µm) Best SPTR (FWHM - 5 %) @ 467 nm & Vbias max SPTR Variation 405 nm 635 nm SPTR variation 0 C 20 C 1 HAMAMATSU 50 150 ps 0 % 5 % 1 HAMAMATSU 100 ps 10 % 5 % 1 Sensl 20 ps 0 % 10 % 1 Sensl 35 200 ps 15 % 15 % 1 ASD (FBK) 50 140 ps 30 % 0 % 9 HAMAMATSU 25 250 ps 10 % 0 % 9 HAMAMATSU 100 170 ps 20 % 0 % 9 Sensl 35 measurement impossible at single p.e level 9 ASD (FBK) 50 300 ps 10 % measurement impossible 20
Additional slides 21
References of the plots Characterization of a prototype matrix of Silicon Photomultipliers, N. Dinu, P. Barrillon, C. Bazin, N. Belcari, M.G. Bisogni, S. Bondil-Blin, M. Boscardin, V. Chaumat, G. Collazuol, C. de La Taille, A. del Guerra, G. Llosá, S. Marcatili, M. Melchiorri, A. Tarolli, C. Piemonte, V. Puill, J.F.Vagnucci, N. Zorzi J.F.Vagnucci,, Nuclear Inst. and Methods in Physics Research A 610 (2009), pp. 101-104 Electro-optical characterization of SiPM: a comparative study, N. Dinu, Z. Amara, C. Bazin, V. Chaumat, C. Cheikali, G. Guilhem, V. Puill, C. Sylvia, Nuclear Inst. and Methods in Physics Research A 610 (2009), pp. 423-426 Temperature and Bias Voltage Dependence of the MPPC Detectors, NSS IEEE Knoxwille Proceedings, N. Dinu, C. Bazin. V. Chaumat, C. Cheikali, A. Para, V. Puill, C. Sylvia, J.F. Vagnucci 22
MPPC 50 µm «wide trace» NEW HAMAMATSU PROTO MPPC 100 µm «wide trace» 23
Gain and DCR of S10362-33-50 Temperature and Bias Voltage Dependence of the MPPC Detectors, NSS IEEE Knoxwille Proceedings, N. Dinu, C. Bazin. V. Chaumat, C. Cheikali, A. Para, V. Puill, C. Sylvia, J.F. Vagnucci 24