QSB34GR / QSB34ZR / QSB34CGR / QSB34CZR Surface-Mount Silicon Pin Photodiode

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Transcription:

QSB34GR / QSB34ZR / QSB34CGR / QSB34CZR Surface-Mount Silicon Pin Photodiode Features Daylight Filter (QSB34GR and QSB34ZR Only) Surface-Mount Packages: QSB34GR / QSB34CGR for Over-Mount Board QSB34ZR / QSB34CZR for Under-Mount Board Fast PIN Photodiode Wide Reception Angle: 120 Large Chip Size: 3 mm x 3 mm Sensitive Area: 2.55 mm x 2.55 mm High Sensitivity Low Capacitance Available in 0.470 inch (12 mm) Width Tape on 7 inch (178 mm) Diameter Reel: 1,000 Units per Reel Ordering Information Schematic ANODE CATHODE Part Number Operating Temperature Package Packing Method QSB34GR QSB34ZR QSB34CGR QSB34CZR -25 to +85 C PLCC 2L Tape and Reel 2008 Semiconductor Components Industries, LLC. October-2017, Rev. 9 Publication Order Number: QSB34/D

Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T A = 25 C unless otherwise specified. Symbol Parameter Min. Unit T OPR Operating Temperature -25 to +85 T STG Storage Temperature -40 to + 85 C (1) T SOL Soldering Temperature 260 V R Reverse Voltage 32 V Power Dissipation at (or below) 25 C mw P C 150 Free Air Temperature Note: 1. Soldering time 5 s. Recommend I R Reflow Soldering Profile 1 ~ 3 C/s 1 ~ 3 C/s Pre-heating 180 ~ 200 C 120 s Max. 60 s Max. Above 220 C 260 C Max. 10 s Max. 2

Electrical / Optical Characteristics Values are at T A = 25 C unless specified otherwise. Symbol Parameter Test Conditions Min. Typ. Max. Units V R Reverse Voltage I R = 0.1 ma 32 V I R(D) Dark Reverse Current V R = 10 V 30 na PK Peak Sensitivity 940 nm Reception Angle at 1/2 Power ±60 o I PH Photo Current E e = 1 mw / cm 2, V CE = 5 V 25 37 A C Capacitance V R = 3 V 25 pf t r Rise Time 50 ns V R = 10 V, R L = 50 t f Fall Time 50 ns 0.5 Special Sensitivity QSB34GR, QSB34ZR 730 1100 QSB34CGR, QSB34CZR 400 1100 nm 3

Typical Performance Characteristics Figure 1. Relative Spectral Sensitivity vs. Wavelength Figure 3. Capacitance vs. Reverse Voltage Figure 2. Short Circuit Current vs. Irradiance Figure 4. Dark Current vs. Temperature Figure 5. Dark Current vs. Reverse Voltage Figure 6. Response Time vs. Load Resistance 4

Physical Dimensions PLCC 2L (QSB34GR / CGR) Figure 7. PLCC DETECTOR (ACTIVE) Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. 5

Physical Dimensions (continued) PLCC 2L (QSB34ZR / CZR) Figure 8. PLCC DETECTOR (ACTIVE) Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. 6

Tape and Reel Dimensions CATHODE Ø1.5±0.1 Ø13±0.5 2.50±0.5 2.50±0.5 2.0±0.05 Ø60.2±0.5 Ø178±1.0 13.2±1.5 16.0±0.2 4.0±0.10 5.5±0.05 1.75±0.10 12 +0.3 0.1 9 6.90±0.10 COVER TAPE 4.20±0.10 Ø1.50±0.25 8.0±0.10 1.45±0.10 Unit: mm 7

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