BIPOLAR ANALOG INTEGRATED CIRCUIT / V, SUPER MINIMOLD SI MMIC DOWNCONVERTER FEATURES HIGH-DENSITY SURFACE MOUNTING: pin super minimold or SOT- package WIDEBAND OPERATION: RF =. GHz to. GHz = MHz to MHz BUILT-IN POWER SAVE FUNCTION SUPPLY VOLTAGE: =.7 TO. V DESCRIPTION The and are silicon RFICs manufactured using the NESAT III process. The devices consist of a mixer, an amplifier and an LO buffer amplifier. These devices are suitable as st downconverters for the receiver stage of cellular and other wireless systems. The is designed for low power consumption while the is designed for low distortion. The /8TB are pin compatible and have comparable performance to the larger UPC77T/8T, so they are suitable for use as a replacement to help reduce system size. The IC is housed in a pin super minimold or SOT- package. Stringent quality assurance and test procedures ensure the highest reliability and performance. = V, LO Power = - dbm MHz MHz ELECTRICAL CHARACTERISTICS (TA = C, = VPS =. V, PLO = - dbm) PART NUMBER PACKAGE OUTLINE S S SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX ICC Circuit Current, VPS = V ma.7. 7.7.. 8 VPS =. V μa.. frf RF Operating Frequency Range (The conversion gain at frf is not more than db down from the gain at frf = 8 MHz, f = MHz) GHz.... f Operating Frequency Range (The conversion gain at f is not more than db down from the gain at frf = 8 MHz, f = MHz) MHz CG Conversion Gain, frf = 8 MHz, f = MHz db 8 9 frf =. GHz, f = MHz db 7 NF Noise Figure, frf = 8 MHz, f = MHz db 9 SSB frf =. GHz, f = MHz db PSAT Saturated Output Power, frf = 8 MHz, f = MHz dbm - - -7 + frf =. GHz, f = MHz dbm - -7 - PdB Output Power at db frf = 8 MHz dbm -. compression point f = MHz OIP Output rd Order Intercept Point, (SSB) PLO = - dbm dbm + + frf =.8~. GHz, f = MHz ISOL LO Leakage, flo =.8 ~. GHz at RF pin dbm - - at pin dbm - - RTH (J-A) Thermal Resistance (Junction to Ambient) Mounted on a x x. mm epoxy glass PWB C/W Notes:. PRF = - dbm.. PRF = - dbm.
, ABSOLUTE MAXIMUM RATINGS (TA = C) SYMBOLS PARAMETERS UNITS RATINGS, VPS Supply Voltage V. PT Total Power Dissipation mw TOP Operating Temperature C - to +8 TSTG Storage Temperature C - to + Notes:. Operation in excess of any one of these parameters may result in permanent damage.. Mounted on a x x. mm epoxy glass PWB (TA = +8 C). RECOMMENDED OPERATING CONDITIONS SYMBOLS PARAMETERS UNITS MIN TYP MAX Supply Voltage V.7.. TOP Operating Temperature C - + +8 PLO LO Input Level dbm - - TEST CIRCUIT/BLOCK DIAGRAM, LO In RF In All Capacitors. µf VPS Out PIN DESCRIPTION Pin Pin Applied Pin Description Internal No. Name Voltage Voltage Equivalent Circuit (V) (V) RFIN. Signal input pin to double balanced mixer. This pin must be coupled to the signal source with a blocking capacitor. From LO To Amp GND Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. LOIN. LO input pin. The LO buffer is designed as a differential amplifier. Recommended input level is - to dbm. Mixer VPS / GND Power save control pin can control the On/Sleep state with bias as follows: VPS (V) STATE. ON to. SLEEP Rise time/fall time using this pin is approximately µs..7 to. Power supply pin. This pin should be externally equipped with a bypass capacitor to minimize ground impedance. OUT.7 Output of single-ended push-pull buffer amplifier. This is an emitter-follower output with low impedance. This pin must be coupled to the next stage with a blocking capacitor.
, TYPICAL PERFORMANCE CURVES (TA = C) OUTPUT POWER vs. FREQUENCY MHz MHz MHz MHz 7 MHz = V LO Power = - dbm MHz MHz Output Power (dbm) - - = V LO Power = - dbm PSAT PdB 8 Frequency (MHz) LO TO ISOLATION vs. LO FREQUENCY UP- LO Power at Port (dbm) - - - - - = V dbm - dbm LO Power Input - dbm - dbm MHz MHz MHz = V LO Power = - dbm Input Above LO Output Freq MHz 8 8 OUTPUT POWER vs. FREQUENCY MHz MHz = V LO Power = - dbm MHz 7 MHz MHz MHz Output Power (dbm) - - - PdB PSAT = V LO Power = - dbm 8 Frequency (MHz)
, TYPICAL PERFORMANCE CURVES (TA = C) LO TO ISOLATION vs. LO FREQUENCY UP- LO Power at Port (dbm) - - - - - = V dbm - dbm - dbm - dbm LO Power Input MHz MHz MHz MHz = V LO Power = - dbm Input Above LO 8 - Output Freq 8 CONVERSION GAIN vs. LO POWER = V = MHz LO Power = - dbm = V = MHz = Vr = - LO = MHz LO = MHz - - - - LO Power (dbm)
, APPLICATION EXAMPLE Digital Cellular Telephone RX Low Noise Tr DEMO I Q SW VCO N PLL PLL I TX PA ø 9 Q ORDERING INFORMATION INTERNAL BLOCK DIAGRAM PART NUMBER -E-A -E-A QTY K/Reel K/Reel Embossed Tape, 8 mm wide, Pins,, are in tape pull-out direction. OUTLINE DIMENSIONS RF input output POWER SAVE PACKAGE OUTLINE S.±. LO input GND.±...±.. +. -. LEAD CONNECTIONS (Top View) (Bottom View)...9 ±. DOT ON BACK SIDE CX.7 ~.. All dimensions are typical unless otherwise specified. +. -.. RF INPUT. GND. LO INPUT. PS.. OUTPUT Package Markings: CX: CY: EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALORNIA EASTERN LABORATORIES Headquarters 9 Patrick Henry Drive Santa Clara, CA 9-87 (8) 988- Telex -9 FAX (8) 988-79 DATA SUBJECT TO CHANGE WITHOUT NOTICE Internet: http://www.cel.com // -9