STTH83CY HIGH FREQUENCY SECONDARY RECTIFIERS MAJOR PRODUCTS CHARACTERISTICS I F(AV) V RRM V F (max) trr (max) 2x4 A 3 V 1 V 6 ns FEATURES AND BENEFITS n COMBINES HIGHEST RECOVERY AND VOLTAGE PERFORMANCE. n ULTRA-FAST, SOFT AND NOISE-FREE RECOVERY. n HIGH OPERATING TEMPERATURE THANKS TO LOW LEAKAGE CURRENT. A1 K A2 DESCRIPTION Dual rectifiers suited for Switch Mode Power Supply and high frequency DC to DC converters. Packaged in Max247, this device is intended for use in low voltage, high frequency inverters, free wheeling operation, welding equipment and telecom power supplies. Max247 ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 3 V I F(RMS) RMS forward current 5 A I F(AV) Average forward current Tc = 15 C δ =.5 Per diode Per device 4 8 A I FSM Surge non repetitive forward current tp = 1 ms sinusoidal I RSM Non repetitive avalanche current tp = 1 µs square 4 A 4 A T stg Storage temperature range -55 +175 C Tj Maximum operating junction temperature + 175 C September 22 - Ed: 3A 1/5
STTH83CY THERMAL RESISTANCES Symbol Parameter Value Unit R th (j-c) Junction to case thermal resistance Per diode Total.8.5 C/W R th (c) Coupling.2 C/W STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Tests Conditions Min. Typ. Max. Unit I R * Reverse leakage current V R = 3 V Tj = 25 C 8 µa Tj = 125 C 8 8 V F ** Forward voltage drop I F = 4A Tj=25 C 1.25 V Tj = 125 C.85 1 Pulse test : * tp =5ms,δ<2% ** tp = 38 µs, δ <2% To evaluate the maximum conduction losses use the following equation : P=.75xI F(AV) +.62 I F(RMS) 2 DYNAMIC ELECTRICAL CHARACTERISTICS Symbol Tests Conditions Min. Typ. Max. Unit trr I F =.5 A Irr =.25 A I R = 1 A Tj = 25 C 5 ns I F =1A di F /dt=-5a/µs V R =3V 6 I RM Vcc = 2 V I F =4A d IF /dt = -2 A/µs Tj = 125 C 13 A S factor.3 - tfr I F =4A di F /dt = 2 A/µs, Tj = 25 C 45 ns V FP V FR = 1.1xV F max 5 V 2/5
STTH83CY Fig. 1: Conduction losses versus average current (per diode) Fig. 2: Forward voltage drop versus forward current (per diode) P(W) 55 δ =.5 5 δ =.2 45 δ =.1 4 δ = 1 35 δ =.5 3 25 2 15 T 1 5 IF(av) (A) δ=tp/t tp 5 1 15 2 25 3 35 4 45 5 2 1 1 IFM(A) Maximum values Typical values Tj=25 C Maximum values VFM(V) 1.2.4.6.8 1. 1.2 1.4 1.6 1.8 2. 2.2 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration Fig. 4: Peak reverse recovery current versus dif/dt (9% confidence, per diode) 1..8 Zth(j-c)/Rth(j-c) 25 2 IRM(A) VR=2V IF=2 x IF(av).6.4.2 δ =.5 δ =.2 δ =.1 T Single pulse tp(s) δ=tp/t. 1E-3 1E-2 1E-1 1E+ tp 15 IF=.5 x IF(av) 1 5 5 1 15 2 25 3 35 4 45 5 Fig. 5: Reverse recovery time versus dif/dt (9% confidence, per diode) Fig. 6: Softness factor (tb/ta) versus dif/dt (typical values, per diode) trr(ns) 18 VR=2V 16 14 12 IF=2 x IF(av) 1 8 6 4 IF=.5 x IF(av) 2 5 1 15 2 25 3 35 4 45 5.6.5.4.3.2 S factor VR=2V.1. 5 1 15 2 25 3 35 4 45 5 3/5
STTH83CY Fig. 7: Relative variation of dynamic parameters versus junction temperature (Reference: Tj = 125 C) Fig. 8: Transient peak forward voltage versus dif/dt (9% confidence, per diode) 2.4 2.2 2. 1.8 S factor 1.6 1.4 1.2 1..8 IRM.6.4.2 Tj( C). 25 5 75 1 125 1 8 6 4 VFP(V) 2 5 1 15 2 25 3 35 4 45 5 Fig. 9: Forward recovery time versus dif/dt (9% confidence, per diode) 5 4 tfr(ns) VFR=1.1 x VFmax 3 2 1 5 1 15 2 25 3 35 4 45 5 4/5
STTH83CY PACKAGE MECHANICAL DATA Max247 DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. E A A 4.7 5.3.185.29 A1 2.2 2.6.87.12 b 1. 1.4.38.55 b1 2. 2.4.79.94 D b2 3. 3.4.118.133 c.4.8.16.31 L L1 b1 b2 A1 D 19.7 1.3.776.799 e 5.35 5.55.211.219 E 15.3 15.9.62.626 L 14.2 15.2.559.598 L1 3.7 4.3.146.169 e b c Ordering code Marking Package Weight Base qty Delivery mode STTH83CY STTH83CY Max247 4.4 g. 3 Tube n n Cooling method: C Epoxy meets UL94,V Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 22 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5