R2R Processing of Flexible Devices

R2R Processing of Flexible Devices Mani Thothadri, PhD Senior Director, New Business & Strategic Initiatives Display & Flexible Technologies Group Flextech June 20, 2017

Acknowledgements Dan Forster Christoph Daube Juergen Henrich Stefan Hein Christof Kurthen Hans Georg Lotz Thomas Deppisch Tobias Stolley Fabio Pieralisi Jens Degenhardt Armin Reus Gerhard Steiniger Dirk Wagner Uwe Hermanns Neil Morrison Manfred Englert Manuel Campo Heike Landgraf Florian Ries Andreas Sauer Joe Olson Yuriy Melnik Colin Neikirk Robert Visser Kevin Cunningham Rajesh Swaminathan & Many, Many More 2

Outline Introduction Megatrends Key R2R Process Technologies Barrier Films, Hardcoats & TFT Processing Summary 3

Safe Harbor This presentation contains forward-looking statements, including those regarding anticipated growth and trends in Applied s businesses and markets, industry outlooks, technology transitions, and other statements that are not historical facts. These statements are subject to risks and uncertainties that could cause actual results to differ materially from those expressed or implied by such statements and are not guarantees of future performance. Information concerning these risks and uncertainties is contained in Applied s most recent Form 10-K or 10-Q and other filings with the SEC. All forward-looking statements are based on management's current estimates, projections and assumptions, and Applied assumes no obligation to update them. 4

APPLIED TODAY SERVICES $2.1B DISPLAY and ADJACENT MARKETS FY16 ORDERS SEMI SYSTEMS 5

Applied s Display and Flexible Technology Products CVD PVD NEW PRODUCTS (launched in 2016) Thin Film Encapsulation E-Beam Tester Roll-to-Roll E-Beam Evaporation PVD CVD In-Line SEM Review CORE PRODUCT PORTFOLIO 6

Enabling and Accelerating Innovation SEMICONDUCTOR 100,000,000x reduction in cost per transistor in 40 years 1 DISPLAY 20x reduction in cost per area in 20 years 2 SOLAR 6x reduction in cost per watt in 8 years 3 In 1974, a 64GB smartphone would have cost more than $10B (1) Source: Transistor Museum, History of Transistors (2) Source: Display Search, Nikkei BP, Applied Materials (3) Source: Solarbuzz 7

Outline Introduction Megatrends Key R2R Process Technologies Barrier Films, Hardcoats & TFT Processing Summary 8

Megatrends 6 principle megatrends driving development in the tech sector VIRTUAL REALITY AUGMENTED REALITY PERSONALIZED HEALTHCARE INTERNET OF THINGS ARTIFICIAL INTELLIGENCE BIG DATA AUTONOMOUS VEHICLES 9

The Wearable Era Has Come! Apple Watch changing public perception of wearable electronics Flexible display key component in most devices High end products using AMOLED frontplane Apple Watch Phosphor E-Ink Worldtime 10

New Wearable Sensor Products for Healthcare Increasing number of wearable sensors on the market Shock sensors for determination of impact/blast damage Real time electrocardiograms (EEG) & heart rate monitoring UV dose/exposure monitoring Kind Permission: J. Rogers, MC10 11

Epidermal Electronics: The Ultimate Form Factor Application? Epidermal electronics provide best match between exploitation of form factor and need for low cost processing Metallic strain gauge serpentine structures for EEG/ECG applications Thermal sensors for blood flow measurement based on resistors Blood oximeters based on OLED light sources & organic photodiodes Sweat analytics for body condition monitoring using microfluidics Kind Permission: J. Rogers, MC10 12

Internet of Things (IoT) Concept first proposed by Kevin Ashton in 1999 for network of interconnected smart objects and devices 1 Trillion interconnected sensors predicted in 2022 13

Innovations in Incumbent LCD Display Technology Incumbent LCD display industry also innovating to keep pace with OLED for mobile and wearable devices Next generation LCD displays moving toward Quantum Dot (QD) enhanced backlights for improved color & up to 40 % power savings Barrier Film http://www.laserfocusworld.com/articles/print/volume-50/issue- 04/features/advances-in-displays-quantum-dot-film-lets-lcdsexpress-50-more-color.html/ https://dot-color.com/page/5/ 14

Outline Introduction Megatrends Key R2R Process Technologies Barrier Films, Hardcoats & TFT Processing Summary 15

Roll-to-Roll Technology Roadmap Process Device Application Today Vacuum deposition Blanket films Touch sensors QDEF Barrier layers Optical coatings Food packaging Tomorrow Vacuum deposition Simple patterning Etch (dry & wet) Printing Blanket films Simple, passive optical & electronic devices Polarizers & plasmonic devices IoT devices Sensors Health, food spoilage & waste Future Vacuum deposition Complex patterning Etch (dry & wet) Printing Flex-hybrid integration Complex, active optical & electronic devices Low-resolution displays Flexible electronics Sensors Long-term roadmap to manufacture increasingly complex devices 16

Roll to Roll (R2R) Products THERMAL EVAPORATION E-BEAM EVAPORATION SPUTTERING PECVD TopMet TopBeam SmartWeb R2R CVD Barrier coatings for food packaging and other advanced industrial coatings. Special barrier coatings used in anti-counterfeit films and transparent packaging. Market leader in ITO deposition for capacitance touch panel manufacturing. R2R solution for deposition of dielectrics and semiconductor materials. Coatings for energy storage. Coatings for energy storage. Complex multilayer PVD stacks for solar control & window films in automotive and architectural application. 17

R2R Vacuum Processing Equipment Front surface contact free common platform Web support from back eliminates contact-based defects Winding versatility Low-friction roller bearings and optimized load cell positions for precise web tension Dual-bearing roller architecture to ensure roller-to-roller parallelism Supports a broad variety of substrate types and thicknesses Usable coating width 1.5 m R2R Vacuum Deposition Equipment Process Zones 18

PECVD: High Density Plasma Source Linear plasma source High-density plasma with low thermal budget High-quality film deposition Wide impedance range stability demonstrated CFD design to avoid powder buildup Laminar gas flow Uniform pressure distribution No dead or recirculation zones Plasma characteristics Plasma density > 1 x 10 10 cm -3 Ion energy < 30 ev Electron temperature < 3 ev Plasma Uniformity Transmission / color ratio 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 400 800 1200 1600 Full web width plasma uniformity ~± 2.5% Web Width (mm) 19

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PVD: Rotary Cathode Technology Continuous target rotation ensures clean target surface Minimized particle buildup and emission Dramatically reduced ITO & IGZO nodule density &/or target crack density Maximized process stability and target utilization (> 80 %) Reduction of heat load to substrate during deposition with rotatable Lower target surface temperature with rotatable Less risk of film overheating Higher line speed on heat sensitive, thinner gauge substrates 21

Etch: Roll to Roll Etch Equipment R2R dry etch tools required for selective etching of silicon based semiconductor layers & dielectrics Utilizes fluorine & chlorine based chemistry for photoresist strip, silicon based dielectric & semiconductor etch & anisotropic metal etch Vision system required for inline microscopy & etch endpoint detection Commercial wet etchers available for source/gate/drain metal etching Requirement for selective process chemistry for etching different metals Multiple rinse step capability 200 o C anneal tunnel dryer HEPA filtered enclosure rated Class 100 or better 22

Imprint Lithography: Paradigm Shift in R2R Patterning Source : HP, 2009 Single mask, single imprint process with perfect source, gate & drain alignment!

Imprint Lithography Process Pixel speed depends linearly on mobility but inversely with the square of channel length ~40nm lines on 50μ polyimide 1μm 3 2 1 0 Multilevel structures on flex at 5m/min 20 µm 4 levels in 0.5 μ step heights

TFT Backplane Imprint in Photoresist Provides basis for manufacture of TFT backplanes for active matrix driven sensors and low ppi displays in a-si and MO x (<200 ppi) Micron level features produced with excellent sidewall characteristics & aspect ratio Provides template for subsequent etch steps to manufacture device 1µm 25

Outline Introduction Megatrends Key R2R Process Technologies Barrier Films, Hardcoats & TFT Processing Summary 26

Key R2R Technologies / Applications Substrate planarization Substrate barrier deposition Device passivation, encapsulation &/or barrier film deposition Low temperature TFT backplane manufacture Frontplane (EPD, EW & OLED) &/or sensor manufacture Cover lens hardcoat deposition

Multilayer Barrier Stacks Low temperature inorganic layer to inhibit H 2 O and O 2 permeation Defects in each inorganic layer impact permeation Low temperature process to avoid active organic layer degradation Multilayers critical to achieve high barrier for QD and OLED devices Redundancy and increase in effective diffusion path Planarization or burying of particles, defects by organic or quasi-organic layers Ref: Flexible Flat Panel Displays, Ed. G.P. Crawford (2005). Ref:- Robert Visser MIT/Stanford Nanoforum, April 2005 28

Inorganic Layers for Barrier Films Material Deposition Method Conformal Coating AlOx PVD No line of sight deposition Cost Particle Size / Density High - low dep rate process SiOx PECVD Yes Low high dep rate process w/ HMDSO SiNx PECVD Yes Moderate high dep rate process w/sih 4 Microns/ high density Submicron/ high density Submicron/ low density Resistance to Acids Layer Density Fracture Toughness Low 3.2 g/cm 3 3.3-4.8 MPa m 0.5 High 2.2 g/cm 3 0.55-1.7 MPa m 0.5 High 2.7 g/cm 3 4-6 MPa m 0.5 PECVD SiN x best choice for performance, cost, mechanical robustness Resistant to cracks during downstream processing and handling Key know-how from large area PECVD processes transferable to R2R High deposition rate and low cost processes for high quality films Particle mitigation strategies 29

Single Layer SiN x Barrier Performance Defect averaged barrier performance measured using Aquatran 2 permeation unit at 40 o C/100% RH conditions Barrier improvement factor increases linearly with SiN x layer thickness Typical WVTR ~ 1 x 10-3 g/m 2 day for SiN x layers on PET with MOCON (Ca test results >> 10 x lower) Typical WVTR at 20 o C/50% RH ~ 10 x lower than at 40 o C/100% RH 1 x 10-4 g/m 2 day Champion values as low as 7 x 10-4 g/m 2 day obtained on PET at 40 o C/100% RH 7 x 10-5 at 20 o C/50% RH 30

Barrier Buffer Layer Development Quasi-organic interlayer required between SiN x layers to create torturous path Encapsulates particles and defects in place Mechanically decouples stiffer SiN x layers for increased stack flexibility High transmittance film when referenced to uncoated substrate Plasma Polymerized HMDSO (PP-HMDSO) Hexamethyldisiloxane (HMDSO) Film RI DR nm m/min Uniformity % %T @400nm PP-HMDSO 1.45 > 105 < 4% > 95% ~ 0 Stress MPa 31

Multilayer Stack Barrier Performance Defect averaged barrier performance measured using Aquatran 2 permeation unit at 40 o C/100% RH conditions WVTR < 7 x 10-5 g/m 2 day for full CVD 3 layer stack on PET Equivalent to < 7 x 10-6 g/m 2 day at 20 o C/50%RH 32

Hardcoat for Next Generation Flexible Display Flexible hardcoat to replace current glass cover lens for bendable, rollable & foldable displays Abrasion resistant, UV stable & compatible with organics found in fingerprints R2R PECVD used to deposit tunable CTE siloxane based hardcoats on flexible substrates Pencil hardness improvement (4H 9H) through Adhesion Promotion Layers 33

R2R Process Flow: a-si:h Devices High grade, low surface roughness 50 µm PI foil used Bakeout required for mechanical stabilization & outgassing Plasma pretreated to enhance layer stack adhesion Deposition of barrier layer stack in CVD lab tool TFT layer stack deposition Al Gate metal layer deposited in PVD tool SiO 2 etch stop layer, SiN x gate dielectric, asi channel layer & n + contact layer deposited in CVD tool Cr source/drain metal layer deposited in PVD tool Device patterning Imprint lithography used to pattern stack in single step Coplanar device architecture Dry/wet etch steps used to provide final device structure 34

SAIL Backplane: Patterning Process Flow Imprint Etch Disassemble Then Remove Next Etch Finally Etch top remove exposed polymer mask through metal the remove remaining polymer on array semiconductor and contact a stack top TFT gate second contact one metal stack polymer down all dielectric layer the time and layer to way at to a to to consisting define time expose to expose (optionally) expose the to TFT expose substrate gate completed channel area gate of the dielectric other covering lines structure. layers semiconductor undercutting layers that backplane covering TFT were Begin the by Top removing bottom channel isolated form the metal gate crossovers metal top by lines the metal undercut the thin regions Contact to isolate layer the (optional) gate lines and the Semiconductor TFTs Dielectric Bottom metal Process produces complete backplane: TFT Pixel electrode Data line Crossover Gate line

R2R TFT Device Performance Performance levels sufficient for sensor, EPD & electrowetting display applications High field effect mobility ~ 0.95 cm 2 /Vs for asi, ~ 10 cm 2 /Vs for IGZO High on/off current ratios ~ 10 8 for both asi and IGZO transistors Low threshold voltage ~ -2.5 V for asi & ~ 0.5 V for IGZO High threshold voltage drift stability < 0.4 V after 2000 s for asi 36

From Materials to Circuits Holistic toolbox approach required to build full circuits on flexible substrate materials for wearable device & IoT applications Hybrid solution required to optimize for cost & performance Number of steps & complexity of device will determine whether full R2R, R2S or S2S approach is required for yield and cost management Component performance & full scale device simulation required to reduce product development time and costs Materials Deposition Processes Etch Processes Lithography Bond/Interconnect Test/Repair Substrates Inorganic Layers Organic Layers Metals Inks Photoresists Adhesives PVD CVD Evaporation Printing Wet Etch Dry Etch Laser Ablation Photolithography Imprint Lithography Laser Ablation Flip Chip Printed Pads Low Temp Cure Pick & Place Optical Inspection Contact Probes Laser Trimming Laser CVD 37

Why Hybrid for Mobile, Wearable & IoT Devices? Essential for high performance applications Organics used in printed electronics not yet optimized for mobility & stability Atmospheric printing processes not yet accurate enough to compete with vacuum processed inorganic device stacks patterned with traditional lithography Substrate performance limits certain device types and integration paths Required for high resolution analog-digital conversion, RF communication, high density memory and certain logic applications Permits increased computational power, component density whilst reducing chip size with little compromise in total product form factor 38

Outline Introduction Megatrends Key R2R Process Technologies Barrier Films, Hardcoats & TFT Processing Summary 39

Roll-to-Roll Technology Roadmap Process Device Application Today Vacuum deposition Blanket films Touch sensors QDEF Barrier layers Optical coatings Food packaging Tomorrow Vacuum deposition Simple patterning Etch (dry & wet) Printing Blanket films Simple, passive optical & electronic devices Polarizers & plasmonic devices IoT devices Sensors Health, food spoilage & waste Future Vacuum deposition Complex patterning Etch (dry & wet) Printing Flex-hybrid integration Complex, active optical & electronic devices Low-resolution displays Flexible electronics Sensors Long-term roadmap to manufacture increasingly complex devices 40

Summary Displays & Flexible Electronics key drivers Information Universe R2R vacuum processing already in HVM for Touch Panel & Barriers Complex device architectures incl flexible TFT backplanes require R2R patterning Hybrid integration schemes required to combine the advantages of traditional silicon IC logic & memory with large scale integrated sensor & display devices Applied Materials creating building blocks to enable R2R manufacturing of more complex flexible devices and applications 41