Analog, Mixed-Signal, and Radio-Frequency (RF) Electronic Design Laboratory. Electrical and Computer Engineering Department UNC Charlotte

Similar documents
RFI MITIGATING RECEIVER BACK-END FOR RADIOMETERS

Digital Integrated Circuits EECS 312

Digital Integrated Circuits EECS 312. Review. Remember the ENIAC? IC ENIAC. Trend for one company. First microprocessor

Sharif University of Technology. SoC: Introduction

Digitally Assisted Analog Circuits. Boris Murmann Stanford University Department of Electrical Engineering

Feedback: Part A - Basics

Leakage Current Reduction in Sequential Circuits by Modifying the Scan Chains

EE262: Integrated Analog Circuit Design

A. Chatterjee, Georgia Tech

Modifying the Scan Chains in Sequential Circuit to Reduce Leakage Current

Integrated Circuit Design ELCT 701 (Winter 2017) Lecture 1: Introduction

Microwave Laboratory

SA4NCCP 4-BIT FULL SERIAL ADDER

Overview of All Pixel Circuits for Active Matrix Organic Light Emitting Diode (AMOLED)

SEMICONDUCTOR TECHNOLOGY -CMOS-

FDTD_SPICE Analysis of EMI and SSO of LSI ICs Using a Full Chip Macro Model

Communication and Computer Engineering ( CCE ) Prepared by

Adding Analog and Mixed Signal Concerns to a Digital VLSI Course

CMOS Analog VLSI Design Prof. A N Chandorkar Department of Electrical Engineering Indian Institute of Technology, Bombay


Power Device Analysis in Design Flow for Smart Power Technologies

Noise Margin in Low Power SRAM Cells

LFSR Counter Implementation in CMOS VLSI

CMD197C GHz Distributed Driver Amplifier

nmos transistor Basics of VLSI Design and Test Solution: CMOS pmos transistor CMOS Inverter First-Order DC Analysis CMOS Inverter: Transient Response

EE C247B ME C218 Introduction to MEMS Design Spring 2017

SEMICONDUCTOR TECHNOLOGY -CMOS-

An Introduction to VLSI (Very Large Scale Integrated) Circuit Design

Monolithic Amplifier GVA-60+ Flat Gain, High IP to 5 GHz. The Big Deal

Applied Materials. 200mm Tools & Process Capabilities For Next Generation MEMS. Dr Michel (Mike) Rosa

CHAPTER 6 ASYNCHRONOUS QUASI DELAY INSENSITIVE TEMPLATES (QDI) BASED VITERBI DECODER

OV µm Pixel Size Back Side Illuminated (BSI) 5 Megapixel CMOS Image Sensor

System Quality Indicators

ECE Circuits Curriculum

24. Scaling, Economics, SOI Technology

ANALYSIS OF POWER REDUCTION IN 2 TO 4 LINE DECODER DESIGN USING GATE DIFFUSION INPUT TECHNIQUE

Sensor Development for the imote2 Smart Sensor Platform

IC Design of a New Decision Device for Analog Viterbi Decoder

CCD Element Linear Image Sensor CCD Element Line Scan Image Sensor

EEC 116 Fall 2011 Lab #5: Pipelined 32b Adder

SiRX Single-Chip RF Front-End for Digital Satellite TV

Lecture 3, Opamps. Operational amplifiers, high-gain, high-speed

Introduction to Data Conversion and Processing

Wafer Thinning and Thru-Silicon Vias

RFSOI and FDSOI enabling smarter and IoT applications. Kirk Ouellette Digital Products Group STMicroelectronics

A High-Speed CMOS Image Sensor with Column-Parallel Single Capacitor CDSs and Single-slope ADCs

ISSN: ISO 9001:2008 Certified International Journal of Engineering Science and Innovative Technology (IJESIT) Volume 2, Issue 4, July 2013

Product Specification PE613050

HEBS: Histogram Equalization for Backlight Scaling

GaAs, MMIC Fundamental Mixer, 2.5 GHz to 7.0 GHz HMC557A

Instrumentation Grade RF & Microwave Subsystems

Monolithic Optoelectronic Integration of High- Voltage Power FETs and LEDs

3D-CHIP TECHNOLOGY AND APPLICATIONS OF MINIATURIZATION

Area Efficient Level Sensitive Flip-Flops A Performance Comparison

Low-Cost, 900MHz, Low-Noise Amplifier and Downconverter Mixer

RF V W-CDMA BAND 2 LINEAR PA MODULE

Absolute Maximum Ratings Parameter Rating Unit V DD, V1, V2 6.0 V Maximum Input Power (DC to 2.5GHz, 2.5V Control) 28 dbm Operating Temperature -40 to

Technology Scaling Issues of an I DDQ Built-In Current Sensor

Low Cost RF Amplifier for Community TV

GHz High Dynamic Range Amplifier

Switched Mode Power Supply

Semiconductor Devices. Microwave Application Products. Microwave Tubes and Radar Components

RF (Wireless) Fundamentals 1- Day Seminar

Low-Noise Downconverters through Mixer-LNA Integration

Dual Slope ADC Design from Power, Speed and Area Perspectives

P.Akila 1. P a g e 60

IC Layout Design of Decoders Using DSCH and Microwind Shaik Fazia Kausar MTech, Dr.K.V.Subba Reddy Institute of Technology.

NDIA Army Science and Technology Conference EWA Government Systems, Inc.

Uncooled amorphous silicon ¼ VGA IRFPA with 25 µm pixel-pitch for High End applications

ECG Demonstration Board

Flip-Flops A) Synchronization: Clocks and Latches B) Two Stage Latch C) Memory Requires Feedback D) Simple Flip-Flop Gate

ADVANCES in semiconductor technology are contributing

Power Optimization of Linear Feedback Shift Register (LFSR) using Power Gating

LOW POWER & AREA EFFICIENT LAYOUT ANALYSIS OF CMOS ENCODER

IEEE Santa Clara ComSoc/CAS Weekend Workshop Event-based analog sensing

DESIGN OF VISIBLE LIGHT COMMUNICATION SYSTEM

INF4420 Project Spring Successive Approximation Register (SAR) Analog-to-Digital Converter (ADC)

Designing for the Internet of Things with Cadence PSpice A/D Technology

UPC2757TB / UPC2758TB

Practical considerations of accelerometer noise. Endevco technical paper 324

RX40_V1_0 Measurement Report F.Faccio

Monolithic CMOS Power Supply for OLED Display Driver / Controller IC

Topics. Microelectronics Revolution. Digital Circuits Part 1 Logic Gates. Introductory Medical Device Prototyping

STMicroelectronics Standard Technology offers at CMP in 2017 Deep Sub-Micron, SOI and SiGe Processes

CMD195. DC-20 GHz SPDT Non-reflective Switch. Features. Functional Block Diagram. Description

Copyright. Robert Alexander Fontaine

PICOSECOND TIMING USING FAST ANALOG SAMPLING

Absolute Maximum Ratings Parameter Rating Unit Max Supply Current (I C1 ) at V CC typ. 150 ma Max Supply Current (I C2 ) at V CC typ. 750 ma Max Devic

A FOUR GAIN READOUT INTEGRATED CIRCUIT : FRIC 96_1

CMOS DESIGN OF FLIP-FLOP ON 120nm

DIFFERENTIAL CONDITIONAL CAPTURING FLIP-FLOP TECHNIQUE USED FOR LOW POWER CONSUMPTION IN CLOCKING SCHEME

Data Sheet. AMMC GHz Image Reject Mixer. Description. Features. Applications. Absolute Maximum Ratings [1]

Features. = +25 C, Vs = 5V, Vpd = 5V

Lecture 1: Circuits & Layout

TGA2807-SM TGA2807. CATV Ultra Linear Gain Amplifier. Applications. Ordering Information. CATV EDGE QAM Cards CMTS Equipment

DESIGN AND IMPLEMENTATION OF SYNCHRONOUS 4-BIT UP COUNTER USING 180NM CMOS PROCESS TECHNOLOGY

Application Note AN-LD09 Rev. B Troubleshooting Low Noise Systems. April, 2015 Page 1 NOISE MEASUREMENT SYSTEM BASELINES INTRODUCTION

Efficient 500 MHz Digital Phase Locked Loop Implementation sin 180nm CMOS Technology

Design and Analysis of Custom Clock Buffers and a D Flip-Flop for Low Swing Clock Distribution Networks. A Thesis presented.

Design and Simulation of MEMS Based Piezoelectric Vibration Energy Harvesting System

Transcription:

Analog, Mixed-Signal, and Radio-Frequency (RF) Electronic Design Laboratory Electrical and Computer Engineering Department UNC Charlotte Teaching and Research Faculty (Please see faculty web pages for additional information) David M. Binkley, Associate Professor http://www.coe.uncc.edu/~dmbinkle/ Arun Ravindran, Assistant Professor http://www.coe.uncc.edu/~aravindr/ Thomas P. Weldon, Associate Professor http://wws2.uncc.edu/tpw/ Farid M. Tranjan, Professor http://www.ece.uncc.edu/faculty/fac/tranjan/ Overview Semiconductor integrated circuits (chips) continually expand beyond digital computer and memory products, requiring analog, mixed-signal, and RF circuits. Analog circuits amplify and condition signals from sensors, actuators, and other devices that interface to the physical world. Mixed-signal circuits combine both analog and digital circuits to provide analog-to-digital, digital-to-analog, and other conversions between analog and digital circuits. RF circuits interface to antenna and wired systems to receive and transmit wireless and wired signals. Analog, mixed-signal, and RF circuits are required in cellular phone, wireless networking, broadband internet access, consumer products, medical imaging, and other high-growth applications. The Semiconductor Industry Association predicts over 60% of all semiconductor chips will contain analog, mixed-signal, or RF circuits. The analog, mixed-signal, and RF electronic design group at UNC Charlotte is engaged in teaching and research to support the high demand for design professionals in North Carolina and the nation. North Carolina design companies include Analog Devices, RF Micro Devices, Maxim, Linear Technology, Texas Instruments, IBM, International Rectifier, Intersil, Semtech, Sony-Ericson, Rambus, Tality, Triad Semiconductor, and others. In addition to teaching, the group endeavors to enhance the state-of-the-art through novel research published in international conferences and journals. Faculty The analog, mixed-signal, and RF electronic design group consists of four, full-time faculty members active in electronic design research. The faculty has over 30 years of industry electronic design experience applied to medical imaging equipment, micropower battery-operated consumer products, and communications products. This assists the faculty in collaborating with and addressing the needs of North Carolina s considerable semiconductor industry. Additional faculty active in microelectronics device research teach core undergraduate and graduate analog electronics courses. 1

Research Faculty in the analog, mixed-signal, and RF electronic design group are engaged in a wide variety of research projects involving design and testing. Technologies utilized include sub-micron bulk CMOS, silicon-on-insulator (SOI) CMOS for extreme temperatures and radiation, and organic and amorphous silicon processes for large-area, lost-cost electronics. Past research projects include DARPA neocad research resulting in a novel CAD tool for optimizing analog CMOS design (Figure 1) DARPA neocad, Agere, and NSF research for built-in self-testing (BIST) of mixed-signal systems, including fault simulation, assessment of circuit performance through loop-back testing, and transient supply-current testing Jet Propulsion Laboratory (JPL) research for micropower, low-noise CMOS electronics for neural implants (Figure 2) JPL research for micropower, low-noise, radiation-hardened SOI CMOS electronics for deep-space missions Duke energy research in electromagnetic compatibility for broadband-overpower-line (BPL) communications Present research projects include Design methodologies for optimizing tradeoffs in gain, bandwidth, thermal noise, flicker noise, dc mismatch, distortion, and power consumption; one faculty member has completed the book, Tradeoffs and Optimization in Analog CMOS Design, John Wiley and Sons, June 2008. Micropower data converters utilizing advanced digital correction Design of analog circuits for low-cost, large-area electronics using organic and amorphous silicon FET s, previously supported by JPL Behavioral modeling of ZnO, thin-film FET devices and design of pixel driver and analog circuits, collaboration with AFRL Distortion reduction in RF receiving and transmitting electronics; one faculty member started MixSig Labs with Small Business Innovative Research (SBIR) funding to pursue commercializing this patented research (Figure 3) 2

Design Methodology CAD Tool (Design optimization of analog CMOS gain, bandwidth, noise, dc mismatch, etc.) THEN, Designer observes circuit perform. against goals FIRST, Designer explores design choices Figure 1. Analog CMOS Optimization Tool (sponsored by DARPA neocad program). The designer selects MOS drain current, inversion coefficient (a numerical measure of inversion from weak through strong inversion), and channel length and observes the design tradeoffs of bias voltages, small-signal parameters, gain, bandwidth, dc mismatch, and noise. Circuit performance goals may be set where green bargraph displays denote goals are met while red bargraph displays denote goals are not met. This CAD tool minimizes trial-and-error SPICE simulations by providing design guidance and intuition. (Led by faculty member Dr. David Binkley). Designer explores device current, inversion level, and length and observes tradeoffs in analog performance against goals. A CAD Methodology for Optimizing Transistor Current and Sizing in Analog CMOS Design, TCAD, 2003. 3

V Signal + _ V Out R G R F 10 x 10 element MEMS probe (left) and variable-gain preamplifier architecture (right). Each neural probe is connected to a separate preamplifier, requiring micropower lownoise operation. V REF V DD PMOS input for low flicker noise Vin+ Vin- Current mirror, PMOS flicker and white noise degeneration (optional) Vout Folded cascode, NMOS flicker and white noise degeneration Current source, NMOS flicker and white noise degeneration Preamplifier schematic notated with low-noise design techniques. Resistive noise degeneration ensures input pair devices dominate both thermal and low-frequency flicker noise. Input pair devices are operated in moderate inversion for high transconductance efficiency and minimum input-referred thermal noise voltage for the bias current of 1 µa Figure 2. Micropower, low-noise 0.35-µm CMOS preamplifier for neural implant (sponsored by Jet Propulsion Laboratory). 100 preamplifiers amplify low-level voltage signals from a MEMs neural probe. Scientists at California Institute of Technology are conducting experiments with monkeys to process and decode signals corresponding to desired arm movements. If successful, this research could lead to human, thought-controlled artificial limbs. (Led by faculty member Dr. David Binkley). 4

P in P 1i Nonlinear Device D1 P 1 Coupler C2 P out P 2i Nonlinear Device D2 P 2 Figure 3. Experimental integrated circuits in linearization research (sponsored by MixSig Labs, Inc., and National Science Foundation). Upper left is layout of 0.18-µm CMOS, linearized RF integrated circuit; upper right is simplified block diagram of patented linearization method; middle is measured gain up to 5 GHz; bottom is two-tone linearized spectrum measured at 1 GHz. (Led by faculty member Dr. Tom Weldon). 5