ORGANIC DISPLAYS and Driving Circuits

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Advanced Course on ORGANIC ELECTRONICS Principles, devices and applications ORGANIC DISPLAYS and Driving Circuits Marco Sampietro WHY ORGANIC LED Display Brightness 100,000 cd/m 2 Efficiency >30 lm/w Low Voltage from 3 to 10 V Fast response < μs Low Cost Deposition Techniques Wide Viewing Angle >160 deg (Lambertian emission) Scalable Emissive Area - from a few µm to a few cm Colors - fluorescent R,G,B and phosphorescent R,G, covers almost 90% of National television System Committee (NTSC) color spectrum standard High contrast Good lifetimes > 10.000 hours Very thin and lightweight Review : B.Geffroy et al., Polymer International 55, pp.572-582 (2006) G.Gelink et al, Adv.Mater. 1-21 (2010) 1

LCDs Light manipulator vs OLEDs Self emitter Courtesy Tohoku Pioneer Corp. OLEDs' advantages over LCDs' are: 1. Simpler structure (thin & lightweight) 2. Better visibility (wide viewing angle) 3. High contrast (when off, it is black!) 4. Faster response 5. Operation at lower temperatures 1 RGB individual pixels (Sanyo-Kodak, SNMD) Active material is deposited separately on each RGB ADVANTAGES: efficiency (direct vision of emitted light) lower manufactoring costs (no colored filters, ecc.) DISADVANTAGES: emitters should be optimized separately emitters need patterning (insoluble polymers?) different life times of the emitters (limited blue lifetime red shift) 2

1 Example from KODAK Spettri dei tre colori primari RGB e del bianco Pixel Kodak Radianza [W/(sr cm^2 nm)] 5,0E-07 4,5E-07 4,0E-07 3,5E-07 3,0E-07 2,5E-07 2,0E-07 1,5E-07 1,0E-07 5,0E-08 Blu Verde Rosso Bianco Amplificazione dell'nvis 0,0E00 400 420 440 460 480 500 520 540 560 580 600 620 640 660 680 700 720 740 760 780 800 820 840 Lunghezze d'onda [nm] 2 BLUE EMITTER and COLOR CHANGERS (Fuji Electric) Blue OLED 2 CCM Only one color of luminescent material ADVANTAGES: no emitter patterning same life time higher efficiency with respect to filters color purity DISADVANTAGES: ITO sputtering over CCM requires a stable blue emitter uses different procedures Blue emitter must have high efficiency or operated at high current (limited lifetime) 3

3 WHITE EMITTER and COLOR FILTERS (Sanyo-Kodak, TDK) 400 nm 750 nm 460 nm 550 nm 630 nm ADVANTAGES: available technology (LCD) no emitter patterning omogeneous degradation area pixel DISADVANTAGES: loss of efficiency a good white emitter is necessary (efficient and pure) heat absorbed 4 STACKED OLED (SOLED) (Universal Display Corp.) 500 nm No masks Increased resolution Uniform white DISADVANTAGES: Multilayered complex structure No polimers (difficult to deposit from solution) Brightness reduction 4

TOP-EMITTING BOTTOM-EMITTING TOP or BOTTOM EMISSION 500 Å 50-100 Å Trade-off among: Trasparency of the electrodes Electrical conductivity Work function (injection) TFT shadowing TRASPARENCY >80% (also when OFF) Easier integration with back-plane electronics OLED structure influences FET choice (nfet or pfet) From OLED to DISPLAY Addressing schemes Sequential Addressing (pixel at a time) CRT, Laser Projection Display Direct Addressing 7-segment LCD Matrix Addressing (line at a time) Passive matrix, Active Matrix 5

PASSIVE MATRIX Line by line scanning in a frame time t line T ( frame time 20ms) N ( number of lines ) Problem: Crosstalk Rows and columns not selected may be floating Sneak paths to ground are possible Pixel : crossover area of 2 linear electrodes (printed on both sides of the active material) Reduced contrast PASSIVE MATRIX To obtain a medium Luminance L m in a display with N lines, each line must be excited with a peak luminance N x L m Ex.: in a 480 line display (VGA), an average luminance of 100 cd/m² is obtained by giving a peak luminance of 48000 cd/m² Interdigitated Single Matrix High peak current density (up to 1A/cm 2 ) OLED efficiency is reduced Faster degradation Large voltage swings on rows and columns Voltage drops along the lines Passive matrix limited to about 100 lines (double if Dual Scan) Dual Scan Split Matrix 6

ACTIVE MATRIX for ORGANICS OLED luminance proportional to current density OLED should be current driven h Current memory Drive pfet kept in operation during the whole frame time (20ms) OLED. Lower peak luminance. Higher efficiency. Longer lifetime Switch FET. Low off current 2T1C cell Passive matrix: I OLED flows along rows and columns resistive dissipation POWER CONSUMPTION Active matrix: I OLED flows between V DD and ground, big and low resistance (NO current in rows and columns) h 7

Amoled Active Matrix oled driven by Si TFTs OLED SCREEN : Sanyo-Kodak (1999) 2,16 pollici (5,5 cm) Resolution: 521 x 218 16,7 milion colors (24 bit) Pixel dimension : 84 μm x 151 μm Temperature : -10 C 75 C Response time : 10 μs Depostion architecture of 3 colors: RGB Delta ~ 2 mm Digital camera Kodak LS633 First commercial product of oled screen 8

Current consumption Immagine Corrente OLED [ma] 0,00 49,5 34,23 The current absorbed by an OLED screen depends on the image to be shown 39,6 102,3 In LCD instead backlight is always on at its maximum (constant maximum consumption) 39,8 16,65 OLED SCREEN PRODUCTS Samsung (2009) TV : Sony (2008) 3mm thick!! 9

OLED SCREEN PRODUCTS TFT area vs mobility and feature size I C W (V V L 1 ' 2 D 2 ox gs T) Data: I led =2 A, C ox =700nF/cm 2, V gs -V T =5V Mobility (cm 2 /Vs) Feature size 0.01 1 20 m W = 500 m Area = 175x175 m 2 W = 20 m Area = 35x35 m 2 Size 5 m W = 125 m Area = 45x45 m 2 W = 5 m Area = 9x9 m 2 10

Organic TFTs for Screens BOTTOM GATE / BOTTOM CONTACTS All processes at T<150 C 85 TFTs, 3 inch wafer PPX (Poly(p-xylylene) Pentacene PVPXlinker AU OTS p 0.18 2 cm V s Gelink et al. Adv.Mater. 2010 Screens with Organic TFTs (I) 11

Screens with Organic TFTs (II) Screens with Organic TFTs (III) Light emission Foil on a Si carrier process 200 cd/m 2 Rollable over 4000 times to =7.5mm I=16 A 300 m S.Steudel et al., Org.El. 13 (2012) 1729-1735 12

Voltage driven current generator Drawback : sensitivity to non uniform performance of the FETs in the screen (typically V T ) I D Different levels of luminance in contiguous pixels OLED? V GS Even with poly-si, V T dispersion can reach 10% (300-400 mv) Solutions: V data Voltage memory circuit Analog Current memory circuits Digital Area Ratio Gray Scale Time Ratio Gray Scale V T dispersion: analog current memory circuit Addressing time: T 2, T 3 and T 5 on; T 6 off C S charge through T 3 Frame time: T 6 on, T 3 and T 5 off V GS T2 =V CS If the pixel is in low light, little currents are flowing long transients Solutions: Precharging or Digital techinques 13

V T dispersion: digital driving Transistor always have V GS =V DD : Area Ratio Gray Scale Individually selectable Sub Pixel Areas V TH is relatively lower Time Ratio Gray Scale Reduced intensity by skipping subframes Time Ratio and Area Ratio can be combined to increase gray scales Electronic ViewFinder & Head-mounted display To be viewed near to the eye with a single lense emagin, 2000 Sony ECX331A XGA 2.4M dots (1024xRGBx768) 1.3cm 90% NTSC color gamut 2011 14

Electronic ViewFinder & Head-mounted display Very small pixel : 3.3µm x 9.9µm Standard Si a viable route for substrate Careful circuit design: A SXGA 1280x1024 with pixel pitch=12 m needs a maximum current for pixel of 20nA Electrophoretic displays 100 m Pulse width modulation Dye TiO2 in polyethilene ( =1µm) Electrical double layer Neutral and stable Electric field Stripped ions Charged dye Electrophoresi E-Ink - start-up of MIT Media Lab (1997). Idea from Jacobson in1995 (Stanford Univ.) 15

Electrophoretic pixel circuits 2 patterned bottom electrodes Data line Scan line ITO Au ITO, NOT patterned (common to all pixels) Memory, acting for frame time T=20ms Rogers et al., J. Polym. Sci. Part A: polym. Chem., 2002, 40, p.3327 MicroContact Stamping Electrophoretic product using organic technology Plastic Logic 100 16

Active matrix : BOTTOM emission ITO below : requires p-type TFT h h a-si : p =10-3 -10-2 cm 2 /Vs In a-si hole mobility is too low (not sufficient for pmosfet) Poly-Si: p =100 cm 2 /Vs 17

Active matrix : TOP emission NO interference of the TFT matrix to the light emission NO transparent substrate Elaborate integration architecture (OLED on ofet: multilayer interdielectrics and interlayer connections) higher luminance and possibility to have bigger pixels (smaller footprint of the pixel) ITO on top TFT di tipo n (a-si minor temperatura, minor costo) ma Il tempo di vita dell OLED tende ad essere degradato Il Silicio amorfo mostra scarsa stabilità di V T 18