Ordering number : ENA1111A GN01CA SANYO Semiconductors DATA SHEET GN01CA Features High cutoff frequency : ft=.ghz typ High gain : S1e =9.dB typ (f=1ghz) Specifications Absolute Maximum Ratings at Ta= C NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise Amplifier Applications Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 0 V Collector-to-Emitter Voltage VCEO V Emitter-to-Base Voltage VEBO V Collector Current IC 0 ma Collector Dissipation PC 00 mw Junction Temperature Tj C Storage Temperature Tstg -- to + C Package Dimensions unit : mm (typ) 01A-009 0..9 0.1 GN01CA-TB-E Product & Package Information Package : CP JEITA, JEDEC : SC-9, TO-6, SOT-, TO-6AB Minimum Packing Quantity :,000 pcs./reel Packing Type: TB Marking 0.. 1. 1 0.9 0.4 TB LOT No. ZW LOT No. 1.1 0.0 0. 1 : Base : Emitter : Collector SANYO : CP Electrical Connection 1 http://semicon.sanyo.com/en/network 111 TKIM/O908AB MSIM TC-000016 No. A1111-1/8
GN01CA Electrical Characteristics at Ta= C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=V, IE=0A 0.1 μa Emitter Cutoff Current IEBO VEB=V, IC=0A 1 μa DC Current Gain hfe VCE=V, IC=mA 0 180 Gain-Bandwidth Product ft1 VCE=V, IC=mA.0 4. GHz ft VCE=V, IC=0mA. GHz Output Capacitance Cob 1.1 1. pf VCB=V, f=1mhz Reverse Transfer Capacitance Cre 0. pf Forward Transfer Gain S1e VCE=V, IC=0mA, f=1ghz 6. 9. db Noise Figure NF VCE=V, IC=mA, f=1ghz, ZS=ZL=0Ω 1.9 db Ordering Information Device Package Shipping memo GN01CA-TB-E CP,000pcs./reel Pb Free 0 4 IC -- VCE 0.0mA 80 0 IC -- VBE V CE =V Collector Current, I C -- ma 40 0 0 1 0.mA 0.0mA 0.1mA 0.mA 0.0mA I 0 B =0mA 0 1 4 6 8 9 Collector-to-Emitter Voltage, V CE -- V IT06 hfe -- IC V CE =V Collector Current, I C -- ma 60 0 40 0 0 0 0 0. 0.4 0.6 0.8 1. Base-to-Emitter Voltage, V BE -- V IT06 ft -- IC V CE =V DC Current Gain, h FE 0 Gain-Bandwidth Product, f T -- GHz 0 Collector Current, I C -- ma IT064 0 Collector Current, I C -- ma IT016 No. A1111-/8
GN01CA Cob -- VCB f=1mhz Cre -- VCB f=1mhz Output Capacitance, Cob -- pf Reverse Transfer Capacitance, Cre -- pf Noise Figure, NF -- db 0.1 Collector-to-Base Voltage, V CB -- V IT06.0 NF -- IC V CE =V f=1ghz Z S =Z L =0Ω..0 1. Forward Transfer Gain, S1e -- db 0.1 18 16 14 1 8 Collector-to-Base Voltage, S1e V CB -- V -- IC V CE =V f=400mhz IT06 Forward Transfer Gain, S1e -- db Collector Current, I C -- ma IT064 9 8 6 4 V CE =V f=1ghz S1e -- IC Collector Dissipation, P C -- mw 6 0 Collector Current, I C -- ma IT01 PC -- Ta 40 00 160 80 40 0 Collector Current, I C -- ma IT018 0 0 0 40 60 80 0 140 160 Ambient Temperature, Ta -- C IT019 No. A1111-/8
GN01CA S Parameters (Common emitter) VCE=V, IC=1mA, ZO=0Ω 0 0.949 -.44. 161. 0.01 6.8 0.94 -. 00 0.896-4..6 14.66 0.096 64.91 0.96-19.0 400 0.1-6.6.1 119.9 0.149 4.18 0.801 -.90 600 0.69 -.0.04 0.16 8.1 0.14-40.64 800 0.6-1.1 86.8 0.169 4.4 0.661-46.0 00 0.8-18.1 1.490.4 0.164.98 0.64-1.94 0 0.66-1.1 6.9 0.18 41.9 0.6-6. 1400 0. -16. 1.19.9 0.16 0 0.66-6.4 1600 0.0-1.9 1.1 1.64 0.189.1 0.6-68.80 1800 0.4 16.4 4.8 0.09 64.08 0.66-4.9 000 0.4 16.94 0.96 41.6 0.6 0.0 0.68-80. VCE=V, IC=mA, ZO=0Ω 0 0.849-6.8 8.604 11.4 0.04 69. 0.908-19.0 00 0.19-6..08.0 0.0 8.46 0.68 -.0 400 0.4-4.0 4.01.14 0.9 49.9 0.6-4.1 600 0.466-18.6.4 90.40 0.16 0.6 0.00-4.19 800 0.44-14.01.69 9.88 0.141. 0.46-4 00 0.41-1.80.6 1.4 0.16.40 0.4 -.89 0 0.414-16.96 1.91 6.80 0.18 60.44 0.44-60.0 1400 0.41-16.8 1.. 0.14 6. 0.460-6. 1600 0.418 1.9 1.91 1.6 0.4 61.9 0.4-1.9 1800 0.41 169.0 1.46 4.89 0.66 6.6 0.48 -.11 000 0.46 16.0 41. 0.1 6.0 0.08-81.84 VCE=V, IC=mA, ZO=0Ω 0 0.6-46.98 1. 14.9 0.044 6. 0.84-4.9 00 0.98-80.18 9.191 11.6 0.066 6.98 0.66 -. 400 0.44-118.84.0 99.01 0.09 4.4 0.46-4.4 600 0.9-140.14.88 86.64 0.118 8.0 0.418-48. 800 0.4-14.61.09.0 0.14 69 0.9 -.48 00 0.6-16.6.0 0.1 0.169 6.9 0.89 -.19 0 0.6-14.16.16 6.0 0.19 64.8 0.91-61. 1400 0. 19.1 1.916. 0. 6. 0.98-6.6 1600 0.8 1.6 1.49 1.8 0.6 6.6 0.41-4.04 1800 0.84 166.49 1.606 46.8 0.84 6.94 0.44-9.4 000 0.91 161.6 1 41. 0.1 6.69 0.44-8.9 VCE=V, IC=mA, ZO=0Ω 0 0.604-6. 1.80 11.98 0.0 6.9 0. -.04 00 0.444-0.60 11.9 11 0.06 60.1 0.14-4. 400 0.4-1.89 6.64 9.91 0.08 6. 0.6-46.89 600 0. -1. 4. 8.90 0.11 66. 0. -49.1 800 0.19-164.6.4.1 0.148 6.8 0.1-4.09 00 0.1 -.60 68.1 0.181 6. 0.1-9.1 0 0.6-19..64 6.9 0.11 6.4 0. -64.6 1400 0.6 14.1.089.19 0.49 66.6 0. -0.4 1600 0.4 169.1 1.904 1. 0.80 6.9 0.0 -.6 1800 0.49 164.16 1.41 46.6 0.00 6.41 0.61-8. 000 0.8 160.18 1.69 4.0 0.4 6.4 0.8-8. No. A1111-4/8
GN01CA S Parameters (Common emitter) VCE=V, IC=1mA, ZO=0Ω 0 0.11 -.8 0. 1.66 0.04 6.8 0.649 -.0 00 0.9-111. 6.68 0.01 6.4 0.44-4.8 400 0.1-144.06 6.8 90. 0.084 68. 0.6-4.1 600 0.0-18.98 4.489 81.46 0.118 69.8 0.99-49. 800 0.01-168.64.4 4. 0.1 69.0 0.90-4.8 00 0.0-16..8 6.9 0.186 68. 0.96-60. 0 0.14 1.94.4 6.00 0.1 68. 0.0-6.94 1400 0. 1.88.1.01 0.6 66.1 0.11-1.94 1600 0.9 16.84 1.961 1.6 0.86 6.4 0. -9.69 1800 0. 16.0 1.9 46.9 0.08 61.86 0. -84. 000 0.48 19. 1.66 4.8 0. 61.8 0.9-88.8 VCE=V, IC=0mA, ZO=0Ω 0 0.461-8.96 1.6 11.91 0.01 64.4 0.600-9. 00 0.46-118.6 1.8 4.09 0.049 64.4 0.406-46.06 400 0.99-149.09 6.669 89.1 0.084 0. 0.0-46.4 600 0.9-16.6 4.4 80.6 0.118 1.64 0.8-49.9 800 0.9-11..0. 0.1 0. 0. -4.0 00 0.99-18..900 6.9 0.18 69.6 0.8-60.94 0 0.0 16..468 61.6 0.1 68.0 0.90-66.4 1400 0.16 8.18 6.6 0.60 66. 0.00 -.89 1600 0. 166. 1.988 1. 0.90 6.0 0.16-80.4 1800 0. 16.69 1.81 46.81 0. 6.1 0. -8.9 000 0.4 18.91 1.69 4.0 0. 61.46 0.4-89.6 VCE=V, IC=0mA, ZO=0Ω 0 0.99-9.89.89 11.4 0.09 6.09 0. -40.8 00 0.1-1.9 1.80 1. 0.04 68.9 0.64-4. 400 0.89-14.90 6.1 8.64 0.08 1.9 0.81-44.9 600 0.88-166.40 4.8 9.6 0.119.9 0.66-48.1 800 0.9-14.0.4.1 0.1.01 0.6-4. 00 0.98 19..904 66.80 0.190 0.6 0.69-60.4 0 0.06 14.88.48 64 0. 69.9 0.9-66.19 1400 0.18.0.188 6.0 0.61 66.98 0.89 -.1 1600 0. 16.8 1.99 0.94 0.9 6.01 0.0-80.46 1800 0.6 161.66 1.81 46.08 0.1 6. 0.18-8.6 000 0.4 18.1 1.699 41.9 0.8 61. 0. -90.00 VCE=V, IC=0mA, ZO=0Ω 0 0.6-8.1.1 11.91 0.06 6. 0.481-9.6 00 0.1-140. 1.88 98.8 0.044. 0.8-40.4 400 0.0-16. 6.6 8.4 0.080.69 0.8-40.44 600 0. -1.48 4..9 0.119 4.1 0.1-44.11 800 0.16-18.4.40 1. 0.1.84 0.0-0.4 00 0.4 1.8.6 6.1 0.189 1. 0.80 -.1 0 0. 11.1. 9. 0.0 0.16 0.89-6. 1400 0.4 16..0 4.6 0.60 68.8 0.00-0. 1600 0.4 16. 1.888 49.16 0.89 6.88 0.1-8.0 1800 0.6 18.6 1. 44. 0.1 6.1 0.0-8. 000 0.6 1 1.61 9.0 0.61 6.4 0. -88.0 No. A1111-/8
GN01CA Embossed Taping Specification GN01CA-TB-E No. A1111-6/8
GN01CA Outline Drawing GN01CA-TB-E Land Pattern Example Mass (g) Unit 0.01 * For reference mm Unit: mm 0.8.4 0.9 0.9 No. A1111-/8
GN01CA Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc., please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 01. Specifications and information herein are subject to change without notice. PS No. A1111-8/8