Typical Applications The is ideal for use as a power amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios Test Equipment & Sensors Military End-Use Space Functional Diagram Features Saturated Output Power: +31.5 dbm @ 23% PAE Output IP3: +4 dbm Gain: 21 db DC Supply: +7V @ 82 ma 5 Ohm Matched Input/Output QFN Leadless SMT Packages, mm 2 General Description The are high dynamic range GaAs phemt MMIC 1 Watt Power Amplifiers which operate from 6 to 9.5 GHz. The amplifier provides 21 db of gain, +31 dbm of saturated power, and 23% PAE from a +7V supply. This 5 Ohm matched amplifier does not require any external components and the RF I/Os are DC blocked for robust operation. For applications which require optimum OIP3, Idd should be set for 52 ma, to yield +4 dbm OIP3. For applications which require optimum output P1dB, Idd should be set for 82 ma, to yield +3 dbm Output P1dB. Electrical Specifications, T A = + C, Vdd = +7V, Idd = 82 ma [1] Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 6-8 6-9.5 GHz Gain 18 21 18 21 db Gain Variation Over Temperature.5.5 db/ C Input Return Loss 15 12 db Output Return Loss 11 1 db Output Power for 1 db Compression (P1dB) 27 3 27.5 3.5 dbm Saturated Output Power (Psat) 3.5 31 dbm Output Third Order Intercept (IP3) [2] 4 4 dbm Supply Current (Idd) 82 82 ma [1] Adjust Vgg between -2 to V to achieve Idd= 82 ma typical. [2] Measurement taken at 7V @ 52mA, Pin/Tone = -15 dbm 1 Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916
Broadband Gain & Return Loss RESPONSE (db) 3 2 15 1 5-5 -1-15 -2-4 5 6 7 8 9 1 11 12 Input Return Loss vs. Temperature RETURN LOSS (db) -5-1 -15-2 - -3 S21 S11 S22-4 5 6 7 8 9 1 11 12 + C -4 C Gain vs. Temperature GAIN (db) 28 24 2 16 12 + C -4 C 8 6 6.5 7 7.5 8 8.5 9 9.5 1 Output Return Loss vs. Temperature RETURN LOSS (db) -5-1 -15-2 + C -4 C - 4 5 6 7 8 9 1 11 12 P1dB vs. Temperature Psat vs. Temperature 33 33 P1dB (dbm) 31 29 Psat (dbm) 31 29 27 + C -4 C 27 + C -4 C 6 6.5 7 7.5 8 8.5 9 9.5 1 6 6.5 7 7.5 8 8.5 9 9.5 1 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916 2
P1dB vs. Current Psat vs. Current P1dB (dbm) 33 31 29 27 52mA 62mA 72mA 82mA 6 6.5 7 7.5 8 8.5 9 9.5 1 Output IP3 vs. Temperature 7V @ 52 ma, Pin/Tone = -15 dbm IP3 (dbm) 46 42 38 34 3 + C -4 C 26 6 6.5 7 7.5 8 8.5 9 9.5 1 Psat (dbm) 33 31 29 27 52mA 62mA 72mA 82mA 6 6.5 7 7.5 8 8.5 9 9.5 1 Power Compression @ 8 GHz, 7V @ 82 ma Pout(dBm), GAIN (db), PAE(%) 3 2 15 1 5 Pout Gain PAE -14-1 -6-2 2 6 1 14 INPUT POWER (dbm) Output IM3, 7V @ 52 ma 8 Output IM3, 7V @ 82 ma 8 6 6 6 GHz 7 GHz 8 GHz 9 GHz 1 GHz IM3 (dbc) 4 IM3 (dbc) 4 2 6 GHz 7 GHz 8 GHz 9 GHz 1 GHz 2-2 -16-12 -8-4 4 8 Pin/Tone (dbm) -2-16 -12-8 -4 4 8 Pin/Tone (dbm) 3 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916
Gain & Power vs. Supply Current @ 8 GHz 34 Gain & Power vs. Supply Voltage @ 8 GHz 34 GAIN (db), P1dB (dbm), Psat(dBm) Reverse Isolation vs. Temperature, 7V @ 82 ma ISOLATION (db) 32 3 28 26 24 22 2 18 52 62 72 82-1 -2-3 -4-5 -6-7 Idd SUPPLY CURRENT (ma) + C -4 C Gain P1dB Psat -8 6 6.5 7 7.5 8 8.5 9 9.5 1 GAIN (db), P1dB (dbm), Psat(dBm) Power Dissipation POWER DISSIPATION (W) 32 3 28 26 24 22 2 18 6.5 7 7.5 6 5.5 5 4.5 4 3.5 Gain P1dB Psat Vdd SUPPLY VOLTAGE (Vdc) 6 GHz 7 GHz 8 GHz 9 GHz 1 GHz 3-14 -1-6 -2 2 6 1 14 INPUT POWER (dbm) Absolute Maximum Ratings Typical Supply Current vs. Vdd Drain Bias Voltage (Vdd) +8 Vdc Vdd (V) Idd (ma) Gate Bias Voltage (Vgg) RF Input Power (RFIN)(Vdd = +7. Vdc) -2. to Vdc +12 dbm +6.5 824 +7. 82 Channel Temperature 175 C Continuous Pdiss (T= 75 C) (derate 59.8 mw/ C above 75 C) 5.98 W +7.5 815 Note: Amplifier will operate over full voltage ranges shown above Vgg adjusted to achieve Idd = 82 ma at +7.V Thermal Resistance (channel to package bottom) 16.72 C/W Storage Temperature -65 to +15 C Operating Temperature -55 to +85 C ESD Sensitivity (HBM) Class B. Passed 2V ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916 4
Outline Drawing PIN 1 INDICATOR.9.85.8 SEATING PLANE 5.1 5. SQ 4.9 TOP VIEW.5 BSC.45.4..3..18 24 17 16.5 MAX.2 NOM COPLANARITY.8.2 REF EXPOSED PAD BOTTOM VIEW 3.5 REF COMPLIANT TO JEDEC STANDARDS MO-22-VHHD-4. 32-Lead Lead Frame Chip Scale Package [LFCSP] 5 mm 5 mm and.9 mm Package Height (HCP-32-3) Dimensions shown in millimeters 32 9 1 8 DETAIL A (JEDEC 95) PIN 1 INDICATOR AREA OPTIONS (SEE DETAIL A) 3.8 3.7 SQ 3.6.2 MIN FOR PROPER CONNECTION OF THE EXPOSED PAD, REFER TO THE PIN CONFIGURATION AND FUNCTION DESCRIPTIONS SECTION OF THIS DATA SHEET. Package Information Part Number Package Body Material Lead Finish MSL Rating Package Marking [2] [1] H59 RoHS-compliant Low Stress Injection Molded Plastic 1% matte Sn MSL1 XXXX [1] H59 TR RoHS-compliant Low Stress Injection Molded Plastic 1% matte Sn MSL1 XXXX [1] Max peak reflow temperature of 26 C [2] 4-Digit lot number XXXX 5 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916
Pin Descriptions Pin Number Function Description Interface Schematic 1, 2, 6-19, 23, 24, 26, 27, 29, 31 N/C 3, 5, 2, 22 GND 4 RFIN 21 RFOUT, 28, 3 Vdd 1-3 32 Vgg Not connected. These pins and package bottom must be connected to RF/DC ground. This pad is AC coupled and matched to 5 Ohms. This pad is AC coupled and matched to 5 Ohms. Power Supply Voltage for the amplifier. External bypass capacitors of 1 pf and 2.2 µf are required. Gate control for amplifier. Adjust to achieve Idd of 82 ma. Please follow MMIC Amplifier Biasing Procedure Application Note. External bypass capacitors of 1 pf and 2.2 µf are required. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916 6
Application Circuit Component C1 - C4 C5 - C8 Value 1pF 2.2µF 7 For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916
Evaluation PCB List of Materials for Evaluation PCB 115927-HMC59LP5 [1] Item J1 - J2 J3 C1 - C4 C5 - C8 U1 PCB [2] Description PCB Mount SMA Connector DC Pin 1 pf Capacitor, 42 Pkg 2.2 µf Capacitor, 126 Pkg 191 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4 The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 5 Ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Analog Devices, Inc. upon request. For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916 8