OBSOLETE HMC215LP4 / 215LP4E. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram

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v1.111 LO AMPLIFIER, 1.7-4. GHz Typical Applications The HMC215LP4 / HMC215LP4E is ideal for Wireless Infrastructure Applications: PCS / 3G Infrastructure Base Stations & Repeaters WiMAX & WiBro ISM & Fixed Wireless Functional Diagram Features Input IP3: +25 dbm Low Input LO Drive: +2 to +6 dbm High LO to RF Isolation: 32 db Low Conversion Loss: 8 db Single Positive Supply: +5V @ 56 ma 24 Lead Ceramic 4x4mm SMT Package: 16mm² General Description The HMC215LP4 & HMC215LP4E are high linearity, double-balanced converter ICs that operate from 1.7 to 4. GHz and deliver a +25 dbm input third order intercept point. The LO amplifier output and high dynamic range mixer input are positioned so that an external LO filter can be placed in series be-tween them. The converter provides 32 db of LO to RF isolation and is ideal for upconverter and downconverter applications. The IC operates from a single +5V supply consuming 56 ma of current and accepts a LO drive level of 2 to 6 dbm. The design requires no external baluns and supports IF frequencies between DC and 1 GHz. The HMC215LP4(E) is pin for pin compatible with the HMC552LP4(E), which operates from 1.6 to 3. GHz. Electrical Specifications, T A = +25 C, LO = +4 dbm, Vcc = +5V, IF = MHz* Parameter Min. Typ. Max. Units Frequency Range, RF, LO 1.7-4. GHz Frequency Range, IF DC - 1. GHz Conversion Loss 8. 11 db Noise Figure (SSB) 8.5 db LO to RF Isolation 23 32 db LO to IF Isolation 2 db IP3 (Input) 25 dbm 1 db Compression (Input) 17 dbm LO Drive Input Level (Typical) 2 to 6 dbm Supply Current (Icc) 56 6 ma *Unless otherwise noted, all measurements performed as a downconverter, with low side LO and configured as shown in application circuit. - 1 One Technology Way, P.O. Box 96, Norwood, MA 262-96 Phone: 978-25-3343 Fax: 978-25-3373 Phone: Order 781-329-47 On-line at www.hittite.com Application Support: Phone: 978-25-3343 Application or apps@hittite.com

v1.111 LO AMPLIFIER, 1.7-4. GHz Conversion Gain vs. Temperature Isolation CONVERSION GAIN (db) - -4C Conversion Gain vs. LO Drive CONVERSION GAIN (db) - LO= dbm LO= +8 dbm Upconverter Performance Conversion Gain vs. LO Drive CONVERSION GAIN (db) - LO= dbm ISOLATION (db) Return Loss RETURN LOSS (db) - IF Bandwidth RESPONSE (db) - -3-4 - Conversion Gain Return Loss RF to IF LO to RF LO to IF RF LO -25.2.4.6.8 1 1.2 1.4 1.6 One Technology Way, P.O. Box 96, Norwood, MA 262-96 Phone: 978-25-3343 Fax: 978-25-3373 Phone: Order 781-329-47 On-line at www.hittite.com Application Support: Phone: 978-25-3343 Application or apps@hittite.com - 2

v1.111 LO AMPLIFIER, 1.7-4. GHz Input IP3 vs. Temperature 4 Input IP3 vs. LO Drive 35 INPUT IP3 (dbm) Input IP2 vs. Temperature INPUT IP2 (dbm) Input P1dB vs. Temperature INPUT P1dB (dbm) 35 3 25 2 15 8 7 6 5 4 3 2 2 18 16 14 12-4C 5-4C -4C INPUT IP3 (dbm) Input IP2 vs. LO Drive INPUT IP2 (dbm) 3 25 2 15 5 8 7 6 5 4 3 LO= dbm LO= dbm 2 MxN Spurious @ IF Port nlo mrf 1 2 3 4 xx -4 14 32 1 5 22 37 49 2 78 66 6 63 93 3 83 97 92 8 8 4 3 1 6 5 1 RF Freq. = 1.9 GHz @ - dbm LO Freq. = 1.8 GHz @ 4 dbm All values in dbc relative to the IF power level. - 3 One Technology Way, P.O. Box 96, Norwood, MA 262-96 Phone: 978-25-3343 Fax: 978-25-3373 Phone: Order 781-329-47 On-line at www.hittite.com Application Support: Phone: 978-25-3343 Application or apps@hittite.com

v1.111 LO AMPLIFIER, 1.7-4. GHz Harmonics of LO nlo Spur @ RF Port LO Freq. (GHz) 1 2 3 4 1. 32 4 27 4 1.4 28 19 25 3 1.8 29 16 3 42 2.2 33 18 27 44 2.6 35 23 34 41 3. 34 2 41 44 LO = 4 dbm All values in dbc below input LO level measured at RF port. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Package Information Typical Supply Current Vcc Icc (ma) +5. 56 ma Absolute Maximum Ratings RF / IF Input (Vcc= +5V) LO Drive (Vcc= +5V) BIAS +22 dbm + dbm +7 Vdc Junction Temperature 15 C Continuous Pdiss (T = 85 C) (derate 5.21 mw/ C above 85 C) Thermal Resistance (junction to ground paddle) Storage Temperature Operating Temperature.339 W 192 C/W -65 to +15 C -4 to +85 C NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE.5mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED.5mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] [1] H215 HMC215LP4 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 XXXX [2] H215 HMC215LP4E RoHS-compliant Low Stress Injection Molded Plastic % matte Sn MSL1 XXXX [1] Max peak reflow temperature of 235 C [2] Max peak reflow temperature of 26 C [3] 4-Digit lot number xxxx One Technology Way, P.O. Box 96, Norwood, MA 262-96 Phone: 978-25-3343 Fax: 978-25-3373 Phone: Order 781-329-47 On-line at www.hittite.com Application Support: Phone: 978-25-3343 Application or apps@hittite.com - 4

v1.111 LO AMPLIFIER, 1.7-4. GHz Pin Descriptions Pin Number Function Description Interface Schematic 1 MIX LO 2, 6-9, 11-17, 19-24 N/C 3 BIAS 4 GND 5 LO IF This pin is DC coupled and matched to 5 Ohms. An off chip DC blocking capacitor is required. No connection. These pins may be connected to RF ground. Performance will not be affected. Power supply for the LO amplifier. Three external bypass capacitors are recommended for optimum performance, as illustrated in the application circuit. Backside of package has exposed metal ground paddle that must also be connected to ground. This pin is DC coupled and matched to 5 Ohms from 1.7 to 4. GHz. An off chip DC blocking capacitor is required. This pin is DC coupled. For applications not requiring operation to DC, this port should be DC blocked externally using a series capacitor whose value has been chosen to pass the necessary IF frequency range. For operation to DC, this pin must not source/sink more than 18 ma of current or die non-function and possible die failure will result. 18 RF This pin is DC coupled and matched to 5 Ohms. Application Circuit Recommended Components Values (IF = DC - 3 MHz) C3 pf C4 2.2 µf C1, C2, C5 pf L1 18 nh R1 18 Ohm - 5 One Technology Way, P.O. Box 96, Norwood, MA 262-96 Phone: 978-25-3343 Fax: 978-25-3373 Phone: Order 781-329-47 On-line at www.hittite.com Application Support: Phone: 978-25-3343 Application or apps@hittite.com

v1.111 LO AMPLIFIER, 1.7-4. GHz Evaluation PCB List of Materials for Evaluation PCB 11582 [1] Item J1 - J3 Description J4, J5 DC Pin PCB Mount SMA RF Connector C1, C2, C5 pf Chip Capacitor, 42 Pkg. C3 pf Chip Capacitor, 63 Pkg. C4 2.2 µf Capacitor, Tantalum L1 18 nh Chip Inductor, 63 Pkg. R1 18 Ohm Resistor, 12 1/8 watt Pkg. U1 HMC215LP4 / HMC215LP4E PCB [2] 113417 Evaluation Board [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 435 The circuit board used in the application should use RF circuit design techniques. Signal lines should have 5 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. One Technology Way, P.O. Box 96, Norwood, MA 262-96 Phone: 978-25-3343 Fax: 978-25-3373 Phone: Order 781-329-47 On-line at www.hittite.com Application Support: Phone: 978-25-3343 Application or apps@hittite.com - 6