M1 The M1 is a Microlithic double balanced mixer. As with all Microlithic mixers (patent pending), it features excellent conversion loss, isolations, and spurious performance across a broad bandwidth and in a miniaturized form factor. Accurate, nonlinear software models are available for Microwave Office through the Marki Microwave PDK. The M1 is available as a wire bondable chip or in a connectorized package. The M1-14 is an excellent alternative to Marki Microwave M9 mixers packaged in drop-in carriers such as the ES carrier. Features Compact Chip Style Package (.152 x.9 x.1 ) CAD Optimized for Superior solation and Spurious Response Broadband Performance Excellent Unit-to-Unit Repeatability Fully nonlinear software models available with Marki PDK for Microwave Office RoHS Compliant Electrical Specifications - Specifications guaranteed from 5 to +1 C, measured in a 5Ω system. Parameter O RF F Min Typ Max Diode Option (GHz) (GHz) (GHz) O drive level (dbm) Conversion oss (db) solation (db) DC 8 13.5 14-16 11 16.5 O-RF 43 O-F 2 1 RF-F 2 nput 1 db Compression (dbm) +3 (+1 to +13) nput Two-Tone Third Order ntercept Point (dbm) +9 (+15 to +19) +15 (+1 to +13) +21 (+15 to +19) Part Number Options Please specify diode level and package style by adding to model number. Package Styles Examples Connectorized 1 S M1CH, M1S Chip 2, 3 (RoHS) CH M1 (Model) (Diode Option) 1 Connectorized package consists of chip package wire bonded to a substrate, equivalent to an evaluation board. 2 Chip package connects to external circuit through wire bondable gold pads. 3 Note: For port locations and /O designations, refer to the drawing on page 4 of this document. CH (Package) 215 Vineyard Court, Morgan Hill, CA 9537 Ph: 48.778.42 Fax 48.778.43 info@markimicrowave.com 7/1/14
Page 2-1 -16-18 -1-1 5-3 -35 5 Conversion oss (db) and Diode Options 5 1 15 2 25 3 35 4 F Response (db) ow Side O 2 4 6 8 1 12 14 16 18 2 F Frequency (GHz) O-F solation (db) Typical Performance diode diode 5 1 15 2 25 3 35 4 O Frequency (GHz) -1-1 5-3 -35 5 5 5-7 -1 5-3 -35 5 F Response (db) High Side O M1 O/RF 1 to 4 GHz 2 4 6 8 1 12 14 16 18 2 O-RF solation (db) Diode diode 5 1 15 2 25 3 35 4 O Frequency (GHz) RF-F solation (db) 5 1 15 2 25 3 35 4 O Return oss (db) RF Return oss (db) and Diode Options -16 5 1 15 2 25 3 35 4-1 5 1 15 2 25 3 35 4 O Frequency (GHz) 7/1/14
Page 3 M1 O/RF 1 to 4 GHz Typical Performance -1 5-3 F Return oss (db) 1 2 3 4 5 6 7 8 9 1 11 12 13 14 15 16 17 18 19 2 F Frequency (GHz) Diode diode nput P3 (dbm) 3 25 2 15 1 5 -Diode -Diode -1 1 13 16 19 22 25 28 31 34 37 4-1 -3-7 -9-1 O x n F Upconversion Spurs (dbc) F = 91 MHz, dbm, Diode 1 15 2 25 3 35 4 n=2 n=3 n=4 n=5-1 -3-7 -9-1 n O x n F Downconversion Spurs (dbc) F = 91 MHz, RF = dbm, Diode 1 15 2 25 3 35 4 n=2 n=3 n=4 n=5-1 -3-7 -9-1 Even Harmonic F solation (db) F = dbm 4 8 12 16 2 24 28 32 36 4 Output Frequency at RF Port(GHz) 2xF () 4xF () 2xF () 4xF () -1-3 -7-9 -1 Odd Harmonic F solation (db) F = dbm 5 1 15 2 25 3 35 4 Output Frequency at RF Port(GHz) 3xF () 5xF () 3xF () 5xF () 7/1/14
Page 4 M1 O/RF 1 to 4 GHz.42 [1.7].152 [3.86] Ground pad, 6 P PROJECTON NCH [MM].9 [2.29].45 [1.14].11 [2.79] R.5 sq. minimum bonding pad, 3 P.5 [.13] min clearance.1 [.25].86 [2.18].148 [3.76] Outline Drawing CH package *CH Substrate material is.1 thick Ceramic. /O traces and ground plane finish is 2.5 microns Au over.5 microns WTi. Wire Bonding - Ball or wedge bond with.25 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 15 C and a ball bonding force of 4 to 5 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <.31 mm (12 mils). Port O RF F.52.436 [13.21] [11.7] Connector Type 2.92 mm Female 2.92 mm Female SMA Female.26 [6.6] Note: S-Package Connectors are not removeable..42 [1.7].16 [4.6] microwave M114 R D/C.28 [7.11].56 [14.22].24 [6.1] PROJECTON NCH [MM].38 [9.6] Typ.6 [1.5] Rad 4 P Ø.67 Thru, 4 P [1.7].2 [5.].39 [9.9] Outline Drawing S package 7/1/14
Page 5 M1 O/RF 1 to 4 GHz Downconversion Spurious Suppression Spurious data is taken by selecting RF and O frequencies (+mo+nrf) within the 1 to 4 GHz RF/O bands, which create a 1 MHz F spurious output. The mixer is swept across the full spurious band and the mean is calculated. The numbers shown in the table below are for a -1 dbm RF input. Spurious suppression is scaled for different RF power levels by (n-1), where n is the RF spur order. For example, the 2RFx2O spur is 58 dbc for a -1 dbm input, so a dbm RF input creates a spur that is (2-1) x (-1 db) db lower, or 68 dbc. Typical Downconversion Spurious Suppression (dbc): diode ( diode) 5-1 dbm RF nput 1xO 2xO 3xO 4xO 5xO 1xRF Reference 29(23) 16(16) 27(23) 3(3) 2xRF 44(61) 58(61) 47(59) 55(56) 48(57) 3xRF 76(61) 84(78) 72(72) 82(82) 74(74) 4xRF 114(11) 98(15) 94(16) 12(16) 94(16) 5xRF 123(122) 12(112) 12(119) 118(118) 115(118) Upconversion Spurious Suppression Spurious data is taken by mixing a 1 MHz F with O frequencies (+mo+nf), which creates an RF within the 1 to 4 GHz RF band. The mixer is swept across the full spurious output band and the mean is calculated. The numbers shown in the table below are for a -1 dbm F input. Spurious suppression is scaled for different F input power levels by (n-1), where n is the F spur order. For example, the 2Fx1O spur is typically 53 dbc for a -1 dbm input, so a dbm F input creates a spur that is (2-1) x (-1 db) db lower, or 63 dbc. Typical Upconversion Spurious Suppression (dbc): diode ( diode) 5-1 dbm F nput 1xO 2xO 3xO 4xO 5xO 1xF Reference 2(23) 15(14) 34(35) 37(37) 2xF 53(53) 47(48) 5(49) 51(45) 56(58) 3xF 57(61) 65(61) 61(55) 63(59) 69(72) 4xF 94(95) 9(88) 92(78) 78(75) 81(8) 5xF 15(17) 17(98) 99(84) 95(91) 92(93) 7/1/14
Page 6 M1 O/RF 1 to 4 GHz Port Description DC nterface Schematic O The O port is DC short to ground and AC matched to 5 Ohms from 1 GHz to 4 GHz. Blocking capacitor is optional. O RF The RF port is DC short to ground and AC matched to 5 Ohms from 1 GHz to 4 GHz. Blocking capacitor is optional. RF F The F port is DC coupled to the diodes. Blocking capacitor is optional. F Absolute Maximum Ratings RF DC Current O DC Current F DC Current RF Power Handling (RF+O) Operating Temperature Storage Temperature Parameter Maximum Rating 1 Amp 1 Amp 5 ma +25 dbm at +25 C, derated linearly to +2 dbm at +1 C 5ºC to +1ºC 5ºC to +125ºC DATA SHEET NOTES: 1. Mixer Conversion oss Plot F frequency is 1 MHz. 2. Mixer Noise Figure typically measures within.5 db of conversion loss for F frequencies greater than 5 MHz. 3. Conversion oss typically degrades less than.5 db for O drives 2 db below the lowest and 3 db above highest nominal O drive levels. 4. Conversion oss typically degrades less than.5 db at +1 C and improves less than.5 db at 5 C. 5. Unless otherwise specified diode data taken with 13 dbm O drive, diode data taken with 17 dbm O drive. 6. Specifications are subject to change without notice. Contact Marki Microwave for the most recent specifications and data sheets. 7. Catalog mixer circuits are continually improved. Configuration control requires custom mixer model numbers and specifications. Marki Microwave reserves the right to make changes to the product(s) or information contained herein without notice. Marki Microwave makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Marki Microwave assume any liability whatsoever arising out of the use or application of any product. Marki Microwave, nc. 215 Vineyard Court, Morgan Hill, CA 9537 Ph: 48.778.42 Fax 48.778.43 info@markimicrowave.com www.markimicrowave.com 7/1/14