The MM1-312S is a high linearity passive double balanced MMIC mixer. The S diode offers superior 1 db compression, two tone intermodulation performance, and spurious suppression to other GaAs MMIC mixers. It features excellent conversion loss, superior isolations and spurious performance across a broad bandwidth, in a miniature form factor. Accurate, nonlinear simulation models are available for Microwave Office through the Marki Microwave PDK. The MM1-312S is available as a wire bondable chip or an SMA connectorized package. The MM1-312S is a superior alternative to Marki Microwave carrier and packaged M1 and M3 mixers MM1-312S Features Compact Chip Style Package (.58 x.46 x.4 ) CAD Optimized for Superior Isolation and Spurious Response Broadband Performance Excellent Unit-to-Unit Repeatability Fully nonlinear software models available with Marki PDK for Microwave Office RoHS Compliant Electrical Specifications - Specifications guaranteed from -55 to +1 C, measured in a 5Ω system. Specifications are shown for Configurations A (B). See page 2 for port locations. All bare die are 1% DC tested and 1% visual inspected. RF testing is performed on a sample basis to verify conformance to datasheet guaranteed specifications. Consult factory for more information. Parameter LO RF IF Min Typ Max LO drive level (dbm) (GHz) (GHz) (GHz) Conversion Loss (db (1 MHz) Isolation (db) LO-RF LO-IF RF-IF 3-12 3-12 DC-4.5 7.5 (9) Input 1 db Compression (dbm) +14 Config. A: +18 to +23 See Plots +14 Config. B: +17 to +23 Input Two-Tone Third Order Intercept Point (dbm) +24 Config. A: +18 to +23 +26 Config. B: +17 to +23 Part Number Options Please specify diode level and package style by adding to model number. Package Styles Examples Connectorized 1, 3 S MM1-312SCH-2, MM1-312SS Chip 2, 3 (RoHS) CH-2 MM1-312 (Model) S (Diode Option) 1 Connectorized package consists of chip package wire bonded to a substrate, equivalent to an evaluation board. 2 Chip package connects to external circuit through wire bondable gold pads. 3 Note: For port locations and I/O designations, refer to the drawings on page 2 of this document. CH-2 (Package) 215 Vineyard Court, Morgan Hill, CA 9537 Ph: 48.778.42 Fax 48.778.43 info@markimicrowave.com
Page 2 MM1-312S 1. /B refer to the same part number (MM1-312S) used in one of two different ways for optimal spurious performance. For the lowest conversion loss, use the mixer in (port 1 as the LO input, port 3 as the RF input or output). If you need to use a lower LO drive, use the mixer in (port 1 as the RF input or output, port 3 as the LO input). For optimal spurious suppression, experimentation or simulation is required to choose between and B. For more information, see here..3 Typ [.9].58 [1.47].5 [.13] min clearance.46 [1.17] 1 2 3.23 [.58] PROJECTION INCH [MM].34 [.87].6 x.3 Bonding Pad, 3 PL [.152] [.76] 1. CH Substrate material is.4 thick GaAs. 2. I/O traces and ground plane finish are 2 microns Au. 3. Wire Bonding - Ball or wedge bond with.25 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 15 C and a ball bonding force of 4 to 5 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <.31 mm (12 mils)..4 [.1] PROJECTION INCH [MM] XXX=±.5 XX=±.1.42 [1.7].16 [4.6].56 [14.22].24 [6.1].52.436 [13.21] [11.7].26 [6.6] Function Connector Port Number Port Number Type LO IF RF 1 2 3 3 2 1 SMA Female SMA Female SMA Female Note: S-Package Connectors are not removeable 1 3 MM1312S D/C 2.28 [7.11].6 [1.5] Rad 4 PL Ø.67 Thru, 4 PL [1.7].2 [5.].39 [9.9]
Page 3 MM1-312S Typical Performance -4 Conversion Loss: 1 MHz IF (db) 1-4 Relative IF Response (db) -6-8 -2-12 -14-4 -6-16 -18 2 4 6 8 1 12 14 16-8 4 GHz RF - 4 GHz RF - 1 2 3 4 5 6 IF Frequency (GHz) -4 Conversion Loss vs. LO Power: 1 MHz IF (db) 1-4 -4 Conversion Loss vs. LO Power: 1 MHz IF (db) 1-4 -6-6 -8-8 -12-12 -14-16 -18 +22 dbm +18 dbm +17 dbm +16 dbm 2 4 6 8 1 12 14 16-14 -16-18 +2 dbm +17 dbm +16 dbm +15 dbm 2 4 6 8 1 12 14 16 LO to RF Isolation (db) LO to IF Isolation (db) -3-3 -4-4 -5-5 -6-6 -7-8 2 4 6 8 1 12 14 16-7 -8 2 4 6 8 1 12 14 16 LO Frequency (GHz) LO Frequency (GHz)
Page 4 MM1-312S Typical Performance RF to IF Isolation (db) IF Return Loss (db) -3-5 -4-15 -5-6 -7-8 ConfigurationA 2 4 6 8 1 12 14 16-25 -3 4 GHz RF - 4 GHz RF - 1 2 3 4 5 6 IF Frequency (GHz) -5 RF Return Loss (db) -5 LO Return Loss (db) -15-15 -25 2 4 6 8 1 12 14 16-25 2 4 6 8 1 12 14 16 LO Frequency (GHz) 35 Input IP3: 1 MHz IF (dbm) 35 Output IP3: 1 MHz IF (dbm) 3 3 25 25 2 2 15 15 1 5 2 4 6 8 1 12 14 16 1 5 2 4 6 8 1 12 14 16
Page 5 MM1-312S Typical Performance -3-4 -5-6 -7-8 Even LO Harmonic to RF Isolation (db) 2xLO 2xLO 4xLO 4xLO -3-4 -5-6 -7-8 Even LO Harmonic to IF Isolation (db) 2xLO 2xLO 4xLO 4xLO -9 3 4 5 6 7 8 9 1 11 12-9 3 4 5 6 7 8 9 1 11 12 LO Output Frequency (GHz) LO Output Frequency (GHz) Odd LO Harmonic to RF Isolation (db) Odd LO Harmonic to IF Isolation (db) -3-3 -4-4 -5-5 -6-6 -7-7 -8-9 3xLO 3xLO 3 4 5 6 7 8 9 1 11 12-8 -9 3xLO 3xLO 3 4 5 6 7 8 9 1 11 12 LO Output Frequency (GHz) LO Output Frequency (GHz) -3-4 -5-6 -7-8 -9 2RF x 2LO Spurious Suppression (dbc) dbm RF Input 3 4 5 6 7 8 9 1 11 12-3 -4-5 -6-7 -8-9 2IF x 1LO Spurious Suppression (dbc) dbm IF Input 3 4 5 6 7 8 9 1 11 12 RF Input Frequency (GHz) RF Output Frequency (GHz)
Page 6 MM1-312S Downconversion Spurious Suppression Spurious data is taken by selecting RF and LO frequencies (+mlo+nrf) within the RF/LO bands, to create a spurious output within the IF band. The mixer is swept across the full spurious band and the mean is calculated. The numbers shown in the table below are for a dbm RF input. Spurious suppression is scaled for different RF power levels by (n- 1), where n is the RF spur order. For example, the 2RFx2LO spur is 76 dbc for the A configuration for a dbm input, so a dbm RF input creates a spur that is (2-1) x ( db) db lower, or 86 dbc. Typical Downconversion Spurious Suppression (dbc): A Configuration (B Configuration) 4 dbm RF Input xlo 1xLO 2xLO 3xLO 4xLO 5xLO 1xRF 3 (21) Reference 33 (52) 17 (15) 37 (49) 16 (17) 2xRF 67 (69) 67 (61) 74 (83) 97 (97) 83 (9) 78 (72) 3xRF 112 (112) 72 (77) 97 (18) 84 (88) 92 (19) 75 (81) 4xRF 127 (134) 127 (122) 13 (133) 128 (125) 136 (137) 129 (125) 5xRF 164 (169) 146 (151) 148 (156) 138 (147) 148 (155) 139 (148) Upconversion Spurious Suppression Spurious data is taken by mixing an input within the IF band, with LO frequencies (+mlo+nif), to create a spurious output within the RF output band. The mixer is swept across the full spurious output band and the mean is calculated. The numbers shown in the table below are for a dbm IF input. Spurious suppression is scaled for different IF input power levels by (n-1), where n is the IF spur order. For example, the 2IFx1LO spur is typically 76 dbc for the A configuration for a dbm input, so a dbm IF input creates a spur that is (2-1) x ( db) db lower, or 86 dbc. Typical Upconversion Spurious Suppression (dbc): A Configuration (B Configuration) 4 dbm IF Input xlo 1xLO 2xLO 3xLO 4xLO 5xLO 1xIF 27 (28) Reference 39 (44) 14 (13) 39 (47) 21 (22) 2xIF 66 (62) 76 (77) 62 (6) 76 (81) 74 (68) 83 (88) 3xIF 111 (112) 8 (83) 94 (15) 79 (79) 92 (15) 81 (82) 4xIF 126 (114) 133 (132) 118 (117) 14 (137) 131 (117) 13 (138) 5xIF 139 (152) 135 (138) 143 (152) 142 (149) 152 (156) 133 (137)
Page 7 MM1-312S Mounting and Bonding Recommendations Marki MMICs should be attached directly to a ground plane with conductive epoxy. The ground plane electrical impedance should be as low as practically possible. This will prevent resonances and permit the best possible electrical performance. Datasheet performance is only guaranteed in an environment with a low electrical impedance ground. Mounting - To epoxy the chip, apply a minimum amount of conductive epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip. Cure epoxy according to manufacturer instructions. Wire Bonding - Ball or wedge bond with.25 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 15 C and a ball bonding force of 4 to 5 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <.31 mm (12 mils). Circuit Considerations 5 ohm transmission lines should be used for all high frequency connections in and out of the chip. Wirebonds should be kept as short as possible, with multiple wirebonds recommended for higher frequency connections to reduce parasitic inductance. In circumstances where the chip more than.1 thinner than the substrate, a heat spreading spacer tab is optional to further reduce bondwire length and parasitic inductance. Handling Precautions General Handling: Chips should be handled with a vacuum collet when possible, or with sharp tweezers using well trained personnel. The surface of the chip is fragile and should not be contacted if possible. Static Sensitivity: GaAs MMIC devices are subject to static discharge, and should be handled, assembled, tested, and transported only in static protected environments. Cleaning and Storage: Do not attempt to clean the chip with a liquid cleaning system or expose the bare chips to liquid. Once the ESD sensitive bags the chips are stored in are opened, chips should be stored in a dry nitrogen atmosphere. Bonding Diagram LO/RF LO/RF Minimum Space Gap/ Wirebond Length IF Multiple Wirebonds for Reduced Inductance
Page 8 MM1-312S Port Description DC Interface Schematic Port 1 Port 1 is DC open and AC matched to 5 Ohms from 3 to 12 GHz. Blocking capacitor is optional. P1 Port 2 Port 2 is DC coupled to the diodes. Blocking capacitor is optional. P2 Port 3 Port 3 is DC open and AC matched to 5 Ohms from 3 to 12 GHz. Blocking capacitor is optional. P3 Absolute Maximum Ratings Port 1 DC Current Port 3 DC Current Port 2 DC Current RF Power Handling (RF+LO) Operating Temperature Storage Temperature Parameter Maximum Rating N/A N/A 3 ma +28 dbm at +25 C, derated linearly to +24 dbm at +1 C -55ºC to +1ºC -65ºC to +125ºC DATA SHEET NOTES: 1. Mixer Conversion Loss Plot IF frequency is 1 MHz. 2. Mixer Noise Figure typically measures within.5 db of conversion loss for IF frequencies greater than 5 MHz. 3. Conversion Loss typically degrades less than.5 db at +1 C and improves less than.5 db at -55 C. 4. Unless otherwise specified, data is taken with +2 dbm LO drive. 5. Specifications are subject to change without notice. Contact Marki Microwave for the most recent specifications and data sheets. 6. Catalog mixer circuits are continually improved. Configuration control requires custom mixer model numbers and specifications. Marki Microwave reserves the right to make changes to the product(s) or information contained herein without notice. Marki Microwave makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Marki Microwave assume any liability whatsoever arising out of the use or application of any product. Marki Microwave, Inc. 215 Vineyard Court, Morgan Hill, CA 9537 Ph: 48.778.42 Fax 48.778.43 info@markimicrowave.com www.markimicrowave.com