Photoemission microscope HAMAMTSU PHEMOS-1000 ONPY-PEM Extended resources for Failure Analysis (FA) in ONPY Subject: Benefits for ONPY from participating on 5th European Workshop on Photonics Failure Analysis Content: Hamamtsu workshop participation - get in touch with last knowledge on PEM, TIVA, OBIRCH, and others techniques Reference documents http://onpy.onsemi.com/efa/pdf/efaroznov07.pdf 1
Photoemission Microscope HAMAMTSU PHEMOS-1000 (background) main rack General: Dual stand photoemission microscope with optional Laser scanning Capital expense: ~400K USD (brand new, purchased 2007) (basic configuration) Upgradable techniques: - Laser Scanning - OBIRCH (Optical beam Induced res. change) - sensitive InGaAs camera - Laser marker Operator place Dark box with PEM Optical system: PEM: cooled CCD camera Hamamtsu (1024x1024, pettier cooled, NIR range appropriate for front and backside photoemission) Presented Objectives: 0.8x Macro objective 5x (Aperture=0.14, WD ~ 35 mm) 20x (Aperture=0.40) 100x NIR * (0.50, WD ~ 12 mm) 2
5th European Workshop on Photonics Failure Analysis (28. April 2008) Invited participants: Hamamtsu customers, university representatives, Hamamtsu (German, France, Japan, Swiss) Workshop location Hamamatsu Photonics Deutschland GmbH, Arzbergerstraße 10, 82211 Herrsching/Ammersee (Close to Munich, DE) Note: The Hamamtsu center was visited in Aug. 2006, during testing demo tool before purchasing this tool for ONPY Workshop cost estimation: Registration Fee 0,- Euro (free of charge) Hotel fee (one night) 68,- Euro / day Transportation ~700 Euro Summary: direct costs: ~ 700-1000 Euro ~600 km from Piestany Workshop program: Workshop Program 3
5th European Workshop on Photonics Failure Analysis (continue) Importance to participate (WHY): We purchased and we are using Phemos-1000 (400K Euro tool) from HAMAMATSU (located in EFA Laboratory) Hamamatsu (world leading PE supplier) Tool is frequently used for FA in ONPY, Please see several reports: \\Bezovec\efa\Reports\EFA2007-001.pdf (solved problem with Varian, AlCu step coverage at the wafer edge) \\Bezovec\efa\Reports\EFA2007-002.pdf (solved Icc problem on CMOS, PolySi problem, yield improvement) \\Bezovec\efa\Reports\EFA2007-012.pdf (solved issue on NCP1583, missing contacts) \\Bezovec\efa\Reports\EFA2007-014.pdf (Tool involved for Gate Oxide Integrity) \\Bezovec\efa\Reports\EFA2007-019.pdf (solved issue on NCP3418, missing contacts) \\Bezovec\efa\Reports\EFA2008-001.pdf (NCV7708, burn-in part, missing contacts, M303 particles) \\Bezovec\efa\Reports\EFA2008-002.pdf (Plasma Damage study for GOI improvement) \\Bezovec\efa\Reports\EFA2008-003.pdf (ESD leakage, same as first report, just another tool) \\Bezovec\efa\Reports\EFA2008-004.pdf (NCV7708D, misprocessing found) Regular one year event to share new most recent knowledge, problems and other on Photoemission Organizers of this workshop are in direct contact with us on solving tool issues and supporting us However tool is working, we still have couple of issues. Till now they were solved based on e-mail correspondence (see attached the last e-mail) - unfortunately, not very efficiently. Here is the chance to communicate directly with Japan representative and to try to get issues fixed However we did not purchased Laser Scanning and TIVA it is important to be in touch. Please note, our tool can be easily upgraded in the future, but this needs investment ~200K Euro. This technique is important to localize ohmic shorts and others which cannot be localized by photoemission. It is necessary to get information how other colleagues are using this technique including, its benefits and advantages. Several presentations at workshop deals with this technique. Availability to discuss tool issues and problems in order to fix them directly with Japan representative attending this workshop in Europe and others. 4
5th European Workshop on Photonics Failure Analysis (continue) Importance to participate (WHY, continue): mentioned correspondence with Hamamtsu, please see for reference: MS Outlook massage format PART1 - correspondence Phemos-1000 provement PART2.m Back side probing th probe heads PART Outlook Item 5
Background further information can be found for example at following links: http://onpy.onsemi.com/efa/lab_equip.html http://onpy.onsemi.com/efa/pdf/efaroznov07.pdf 6
Front side probing and photoemission with PHEMOS-1000 probe head NIR objective 4 wafer Electrical specification: up to 6 probe heads: 4 x Karl Suss 120 (pad probing) 2 x Karl Suss 150 (micro probing) Maximum wafer size: 8 Current Instrumentation: R&S power supply 2 x 35 V / 1 A R&S power supply 1 x 35 V / 10 A HP power supply 2 x 25 V / 1A, 6 V DTS 1 tester planned Probe arm 8 chuck Note: PEM in Home position Probe needle 7
Front side probing and photoemission with PHEMOS-1000 probe head NIR objective 4 wafer Electrical specification: up to 6 probe heads: 4 x Karl Suss 120 (pad probing) 2 x Karl Suss 150 (micro probing) Maximum wafer size: 8 Current Instrumentation: R&S power supply 2 x 35 V / 1 A R&S power supply 1 x 35 V / 10 A HP power supply 2 x 25 V / 1A, 6 V DTS 1 tester planned Probe arm 8 chuck Note: PEM in Home position Probe needle 8
Back side probing and photoemission with PHEMOS-1000 NIR objective Electrical specification: up to 6 probe heads: 4 x Karl Suss 120 (pad probing) 2 x Karl Suss 150 (micro probing) Chucks available in ONPY: 4 inch back side 6 inch back side probe head 6 or 4 wafer backside camera Sample - requirements: 100-200 um thickness of the sample (thinner better) 9
First experiment performed on PHEMOS-1000 in ONPY2 (Back side) PEM center Background: Part: PS5LV NCP5381 (AN86) Technology: PowerSense 5LV Units at the edge of the wafers were failing because of increased leakage of protective ESD diodes. By help of new installed photoemission microscope photoemission centers were localized and FIB cut was performed. The root cause was found and qualified as missing TiW barrier between AlCu and Si (Metal1). 10