Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Similar documents
Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Typical Performance 1. 2 OIP3 _ measured with two tones at an output of 7 dbm per tone separated by 1 MHz. Absolute Maximum Ratings

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Typical Performance 1. 2 OIP3 _ measured with two tones at an output of 9 dbm per tone separated by 1 MHz. Absolute Maximum Ratings

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

2 OIP3 _ measured on two tones with a output power 8 dbm/ tone, F2 F1 = 1 MHz. Absolute Maximum Ratings

Typical Performance 1. 2 OIP3 _ measured on two tones with a output power 8 dbm/ tone, F2 F1 = 1 MHz. +5V. RFout. Absolute Maximum Ratings

GHz Wideband High Linearity LNA Gain Block. Typical Performance 1

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Not recommended for new designs

Typical Performance 1

Typical Performance 1

Preliminary Datasheet

* Notices. Operating Case Temperature -40 to +85 Storage Temperature -55 to +155 Junction Temperature +126 Operating Voltage.

50~100MHz. 100~210MHz C2 1nF. Operating Case Temperature -40 to +85 Storage Temperature -55 to +155 Junction Temperature +126 Operating Voltage

Description. Specifications

1 Watt High Linearity, High Gain InGaP HBT Amplifier. Product Description

AH125 ½ W High Linearity InGaP HBT Amplifier

FH1. Functional Diagram. Product Description. Product Features. Applications. Typical Performance (6) Specifications (1) Absolute Maximum Rating

4W High Linearity InGaP HBT Amplifier. Product Description

Features. Specification Min. Typ. Max. Input Return Loss MHz db. Output Return Loss MHz db. Reverse Isolation -22.

Features. = +25 C, Vs = 5V, Vpd = 5V

MH1A. Product Features. Product Description. Functional Diagram. Applications. Specifications (1) Absolute Maximum Rating. Ordering Information

DC-6.0 GHz 1.0W Packaged HFET

TGA2807-SM TGA2807. CATV Ultra Linear Gain Amplifier. Applications. Ordering Information. CATV EDGE QAM Cards CMTS Equipment

TGA4541-SM Ka-Band Variable Gain Driver Amplifier

Monolithic Amplifier GVA-60+ Flat Gain, High IP to 5 GHz. The Big Deal

DATASHEET ISL Features. Applications. Ordering Information. Typical Application Circuit. MMIC Silicon Bipolar Broadband Amplifier

Features. = +25 C, LO = 0 dbm, Vcc = Vcc1, 2, 3 = +5V, G_Bias = +2.5V *

RFOUT/ VC2 31 C/W T L =85 C

OBSOLETE HMC215LP4 / 215LP4E. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram

TGA2218-SM GHz 12 W GaN Power Amplifier

Features. Parameter Min. Typ. Max. Min. Typ. Max. Units

RF2360 LINEAR GENERAL PURPOSE AMPLIFIER

Features. = +25 C, Vdd = +7V, Idd = 820 ma [1]

Features OBSOLETE. = +25 C, As a Function of LO Drive. LO = +13 dbm IF = 70 MHz

Power Amplifier 0.5 W 2.4 GHz AM TR Features. Functional Schematic. Description. Pin Configuration 1. Ordering Information

TGC2610-SM 10 GHz 15.4 GHz Downconverter

Absolute Maximum Ratings Parameter Rating Unit Max Supply Current (I C1 ) at V CC typ. 150 ma Max Supply Current (I C2 ) at V CC typ. 750 ma Max Devic

DATASHEET ISL Features. Ordering Information. Applications. Typical Application Circuit. MMIC Silicon Bipolar Broadband Amplifier

Features. = +25 C, IF = 100 MHz, LO = 0 dbm, Vcc1, 2, 3, = +5V, G_Bias = +3.5V*

TGA2627-SM 6-12 GHz GaN Driver Amplifier

TGC4546-SM GHz Upconverter with Quadrupler

TGA2239. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information. Part No.

Features. = +25 C, LO = 0 dbm, Vcc = Vcc1, 2, 3 = +5V, G_Bias = +2.5V *

QPL GHz GaN LNA

6 GHz to 26 GHz, GaAs MMIC Fundamental Mixer HMC773A

10 GHz to 26 GHz, GaAs, MMIC, Double Balanced Mixer HMC260ALC3B

Features OBSOLETE. = +25 C, As a Function of LO Drive. LO = +10 dbm. IF = 70 MHz

ADA-4789 Data Sheet Description Features Specifications Package Marking and Pin Connections 4GX Applications

GHz High Dynamic Range Amplifier

QPL6216TR7 PRELIMINARY. Product Description. Feature Overview. Functional Block Diagram. Applications. Ordering Information. High-Linearity SDARS LNA

Product Description. Ordering Information. GaAs HBT GaAs MESFET. InGaP HBT

HMC219AMS8 / 219AMS8E. Features OBSOLETE. = +25 C, As a Function of LO Drive. LO = +13 dbm IF = 100 MHz

CMD197C GHz Distributed Driver Amplifier

TGA2238-CP 8 11 GHz 50 W GaN Power Amplifier

Data Sheet. ALM MHz 915 MHz Low Noise, High Linearity Amplifier Module with Fail-Safe Bypass Feature. Description.

QPC6222SR GENERAL PURPOSE DPDT TRANSFER SWITCH. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

= +25 C, IF= 100 MHz, LO = +17 dbm*

MAMX Sub-Harmonic Pumped Mixer GHz Rev. V1. Functional Schematic. Features. Description. Pin Configuration 1

OBSOLETE HMC422MS8 / 422MS8E. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram

OBSOLETE HMC908LC5 MIXERS - I/Q MIXERS, IRMS & RECEIVERS - SMT. GaAs MMIC I/Q DOWNCONVERTER 9-12 GHz. Typical Applications. Functional Diagram

Data Sheet. MGA GHz WLAN Power Amplifier Module. Description. Features. Component Image. Applications. Pin Configuration

Parameter Min. Typ. Max. Min. Typ. Max. Units

HMC581LP6 / 581LP6E MIXERS - SMT. HIGH IP3 RFIC DUAL DOWNCONVERTER, MHz. Typical Applications. Features. Functional Diagram

SKY LF: GPS/GLONASS/Galileo/BDS Low-Noise Amplifier

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features. = +25 C, As a Function of LO Drive

HMC814LC3B FREQ. MULTIPLIERS - ACTIVE - SMT. SMT GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, GHz OUTPUT. Features. Typical Applications

TGL2210-SM_EVB GHz 100 Watt VPIN Limiter. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information

1.5 GHz to 4.5 GHz, GaAs, MMIC, Double Balanced Mixer HMC213BMS8E

Data Sheet. ALM MHz 870 MHz Low Noise, High Linearity Amplifier Module with Fail-Safe Bypass Feature. Description.

Data Sheet. AMMP to 40 GHz GaAs MMIC Sub-Harmonic Mixer In SMT Package. Description. Features. Applications.

Features. Parameter Min. Typ. Max. Units

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features. = +25 C, Vdd = +4.5V, +4 dbm Drive Level

Features OBSOLETE. = +25 C, As a Function of LO Drive. LO = +13 dbm IF = 100 MHz

Features OBSOLETE. LO = +19 dbm, IF = 100 MHz Parameter

The Hmc869LC5 is ideal for: Point-to-Point and Point-to-Multi-Point Radio. Parameter Min. Typ. Max. Units

TGA GHz 30W GaN Power Amplifier

GaAs MMIC Double Balanced Mixer

Features. = +25 C, IF = 1 GHz, LO = +13 dbm*

No need for external driver, saving PCB space and cost.

GaAs MMIC Double Balanced Mixer

CMD178C GHz Fundamental Mixer. Features. Functional Block Diagram. Description

Features. = +25 C, IF= 100 MHz, LO= +13 dbm* Parameter Min. Typ. Max. Min. Typ. Max. Units

HMC485MS8G / 485MS8GE. Features OBSOLETE. = +25 C, LO = 0 dbm, IF = 200 MHz*, Vdd= 5V

SP6T RF Switch JSW6-23DR Ω High Power 3W 5 to 2000 MHz. The Big Deal

SKY LF: GHz Two-Stage, High Linearity and High Gain Low-Noise Amplifier

Parameter Min. Typ. Max. Min. Typ. Max. Units

OBSOLETE HMC423MS8 / 423MS8E MIXERS - DBL-BAL - SMT. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications.

Transcription:

Device Features OIP3 = 28 dbm @ 1900 MHz Gain = 16 db @ 1900 MHz Output P1 db = 15.5 dbm @ 1900 MHz 50 Ω Cascadable Patented temperature compensation Lead-free/RoHS-compliant SOT-89 SMT package Product Description BeRex s BG16C is a high performance InGaP/ GaAs HBT MMIC amplifier, internally matched to 50 Ohms and uses a patented temperature compensation circuit to provide stable current over the operating temperature range without the need for external components. The BG16C is designed for high linearity gain block applications that require low power consumption at 5V. It is packaged in a RoHS-compliant with SOT-89 surface mount package. Typical Performance 1 Parameter Frequency Unit 500 900 1900 2140 2450 MHz Gain 17.2 17.0 16.0 15.7 15.3 db S11-17 -22-24 -20-16 db S22-23 -29-17 -16-15 db OIP3 2 28.5 28.5 28.0 28.0 27.5 dbm P1dB 15.6 16.0 15.5 15.5 15.0 dbm Noise Figure 4.9 4.5 4.6 4.6 4.7 db 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system. 2 OIP3 _ measured with two tones at an output of 3 dbm per tone separated by 1 MHz. Applications Base station Infrastructure/RFID Commercial/Industrial/Military wireless system Applications Circuit *C1, C2, C3 =100 pf ± 5%; C4 = 1000 pf ± 5%; C5 = 10uF; L1 = 33nH *less than 20nH improves RF performance at over 1.9GHz. *40nH or higher value L1 improves RF performance at under 500MHz. *Optimum value of L1 may vary with board design. Absolute Maximum Ratings Min. Typical Max. Unit Bandwidth 5 4000 MHz I C @ (Vc = 5V) 35 42 50 ma V C 5.0 V dg/dt -0.004 db/ C R TH 50 C/W Parameter Rating Unit Operating Case Temperature -40 to +85 C Storage Temperature -55 to +155 C Junction Temperature +220 C Operating Voltage Supply Current Input RF Power +6.5 120 23 V ma dbm Operation of this device above any of these parameters may result in permanent damage. 1

V-I Characteristics BeRex SOT89 Evaluation Board BeRex Evaluation Board *Dielectric constant _ 4.2 *RF pattern width 52mil *31mil thick FR4 PCB Typical Device Data S-parameters (Vc=5V, Ic=40mA, T=25 C) 2

S-Parameter (Vdevice = 5.0V, Icc = 40mA, T = 25 C, calibrated to device leads) Freq S11 S11 S21 S21 S12 S12 S22 S22 [MHz] Mag Ang Mag Ang 100.00 0.718-45.3 5.28-144 0.0499 71.1 0.78 133 500.00 0.177-148 7.42 122 0.0907-31.8 0.119 72.7 1000.00 0.07 120 7.16 50.8 0.0913-89.4 0.0247-127 1500.00 0.0499 14.8 6.82-16.6 0.0911-143 0.104-159 2000.00 0.0932-82 6.34-83.7 0.0885 164 0.166-177 2500.00 0.103-131 5.79-147 0.0905 118 0.177 149 3500.00 0.128 159 5.2 86.9 0.0886 14.7 0.155 92.2 4000.00 0.0679 127 4.86 23.9 0.0941-35.6 0.122 37.3 Mag Ang Mag Ang Typical Performance (Vd = 5V, Ic = 40mA, T = 25 C) Freq MHz 500 900 1900 2140 2450 3000 3500 S21 db 17.2 17.0 16.0 15.7 15.3 14.7 14.4 S11 db -17-22 -24-20 -16-15 -19 S22 db -23-29 -17-16 -15-14 -13.9 P1 dbm 15.6 16.0 15.5 15.5 15.0 14.4 12.7 OIP3 dbm 28.5 28.5 28.0 28.0 27.5 27.0 25 NF db 4.9 4.5 4.6 4.6 4.7 4.7 4.7 Typical Performance (Vd = 4.7V, Ic = 34mA, T = 25 C) Freq MHz 70 500 900 1900 2140 2450 3500 S21 db 19.6 17.0 16.8 15.7 15.4 15.1 14.2 S11 db -11.8-29.8-24.6-18.8-16.9-18.9-18.1 S22 db -5.9-13.9-15.8-13.5-12.3-13.1-13.4 P1 dbm 13.8 13.3 12.9 13.6 13.1 13.5 11.9 OIP3 dbm 25.5 23.5 24.5 25 24 24.5 23.5 NF db 4.9 4.9 4.5 4.6 4.6 4.7 4.7 Typical Performance (Vd = 4.5V, Ic = 29mA, T = 25 C) Freq MHz 70 500 900 1900 2140 2450 3500 S21 db 19.4 16.8 16.3 15.4 15.2 14.8 14 S11 db -13.1-25.2-24.3-18.2-16.3-18.1-17.1 S22 db -5.7-13.1-14.7-12.7-11.6-12.5-12.9 P1 dbm 13.3 12.8 11.8 12.0 12.2 13.0 11.4 OIP3 dbm 23.5 23.5 22.0 20.0 22.0 22.0 22.0 NF db 4.9 4.9 4.5 4.6 4.6 4.7 4.7 3

WCDMA 4FA 2140-60dBc WCDMA 6FA 2140-60dBc 4

ACLR Device Performance Pin-Pout-Gain 900MHz, 5V/40mA 1900 MHz, 5V/40mA 5

OIP3 6

ACPR Gain Flatness 7

Package Outline Dimension Suggested PCB Land Pattern and PAD Layout PCB Land Pattern PCB Mounting 0.40 1.30 0.40 Ø0.40 0.40 0.75 1.20 2.15 1.20 1.20 1.50 1.00 0.45 1.20 0.50 2.80 0.65 0.35 Note : All dimension _ millimeters PCB lay out _ on BeRex website 8

Package Marking Tape & Reel SOT89 Packaging information: Tape Width (mm): 12 Reel Size (inches): 7 YY = Year, WW = Working Week, XX = Wafer No. Device Cavity Pitch (mm): 8 Devices Per Reel: 1000 Lead plating finish 100% Tin Matte finish (All BeRex products undergoes a 1 hour, 150 degree C, Anneal bake to eliminate thin whisker growth concerns.) MSL / ESD Rating ESD Rating: Value: Test: Standard: Class 2 Passes <4000V Human Body Model (HBM) JEDEC Standard JESD22-A114B MSL Rating: Standard: Level 1 at +265 C convection reflow JEDEC Standard J-STD-020 NATO CAGE code: 2 N 9 6 F 9