Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Similar documents
Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Typical Performance 1. 2 OIP3 _ measured with two tones at an output of 7 dbm per tone separated by 1 MHz. Absolute Maximum Ratings

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Typical Performance 1. 2 OIP3 _ measured with two tones at an output of 9 dbm per tone separated by 1 MHz. Absolute Maximum Ratings

Typical Performance 1. 2 OIP3 _ measured on two tones with a output power 8 dbm/ tone, F2 F1 = 1 MHz. +5V. RFout. Absolute Maximum Ratings

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

2 OIP3 _ measured on two tones with a output power 8 dbm/ tone, F2 F1 = 1 MHz. Absolute Maximum Ratings

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

GHz Wideband High Linearity LNA Gain Block. Typical Performance 1

Not recommended for new designs

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Typical Performance 1

Typical Performance 1

Preliminary Datasheet

* Notices. Operating Case Temperature -40 to +85 Storage Temperature -55 to +155 Junction Temperature +126 Operating Voltage.

50~100MHz. 100~210MHz C2 1nF. Operating Case Temperature -40 to +85 Storage Temperature -55 to +155 Junction Temperature +126 Operating Voltage

1 Watt High Linearity, High Gain InGaP HBT Amplifier. Product Description

Description. Specifications

AH125 ½ W High Linearity InGaP HBT Amplifier

FH1. Functional Diagram. Product Description. Product Features. Applications. Typical Performance (6) Specifications (1) Absolute Maximum Rating

Features. Specification Min. Typ. Max. Input Return Loss MHz db. Output Return Loss MHz db. Reverse Isolation -22.

4W High Linearity InGaP HBT Amplifier. Product Description

Features. = +25 C, Vs = 5V, Vpd = 5V

DC-6.0 GHz 1.0W Packaged HFET

Monolithic Amplifier GVA-60+ Flat Gain, High IP to 5 GHz. The Big Deal

TGA4541-SM Ka-Band Variable Gain Driver Amplifier

MH1A. Product Features. Product Description. Functional Diagram. Applications. Specifications (1) Absolute Maximum Rating. Ordering Information

TGA2807-SM TGA2807. CATV Ultra Linear Gain Amplifier. Applications. Ordering Information. CATV EDGE QAM Cards CMTS Equipment

DATASHEET ISL Features. Applications. Ordering Information. Typical Application Circuit. MMIC Silicon Bipolar Broadband Amplifier

Features. = +25 C, LO = 0 dbm, Vcc = Vcc1, 2, 3 = +5V, G_Bias = +2.5V *

RFOUT/ VC2 31 C/W T L =85 C

OBSOLETE HMC215LP4 / 215LP4E. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram

TGA2218-SM GHz 12 W GaN Power Amplifier

DATASHEET ISL Features. Ordering Information. Applications. Typical Application Circuit. MMIC Silicon Bipolar Broadband Amplifier

TGC2610-SM 10 GHz 15.4 GHz Downconverter

Features. Parameter Min. Typ. Max. Min. Typ. Max. Units

Absolute Maximum Ratings Parameter Rating Unit Max Supply Current (I C1 ) at V CC typ. 150 ma Max Supply Current (I C2 ) at V CC typ. 750 ma Max Devic

Features. = +25 C, IF = 100 MHz, LO = 0 dbm, Vcc1, 2, 3, = +5V, G_Bias = +3.5V*

Features OBSOLETE. = +25 C, As a Function of LO Drive. LO = +13 dbm IF = 70 MHz

QPL6216TR7 PRELIMINARY. Product Description. Feature Overview. Functional Block Diagram. Applications. Ordering Information. High-Linearity SDARS LNA

Features. = +25 C, LO = 0 dbm, Vcc = Vcc1, 2, 3 = +5V, G_Bias = +2.5V *

QPL GHz GaN LNA

RF2360 LINEAR GENERAL PURPOSE AMPLIFIER

Features. = +25 C, Vdd = +7V, Idd = 820 ma [1]

SKY LF: GPS/GLONASS/Galileo/BDS Low-Noise Amplifier

TGC4546-SM GHz Upconverter with Quadrupler

TGA2627-SM 6-12 GHz GaN Driver Amplifier

ADA-4789 Data Sheet Description Features Specifications Package Marking and Pin Connections 4GX Applications

Product Description. Ordering Information. GaAs HBT GaAs MESFET. InGaP HBT

Power Amplifier 0.5 W 2.4 GHz AM TR Features. Functional Schematic. Description. Pin Configuration 1. Ordering Information

GHz High Dynamic Range Amplifier

TGA2239. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information. Part No.

6 GHz to 26 GHz, GaAs MMIC Fundamental Mixer HMC773A

CMD197C GHz Distributed Driver Amplifier

10 GHz to 26 GHz, GaAs, MMIC, Double Balanced Mixer HMC260ALC3B

MAMX Sub-Harmonic Pumped Mixer GHz Rev. V1. Functional Schematic. Features. Description. Pin Configuration 1

Data Sheet. ALM MHz 915 MHz Low Noise, High Linearity Amplifier Module with Fail-Safe Bypass Feature. Description.

Features OBSOLETE. = +25 C, As a Function of LO Drive. LO = +10 dbm. IF = 70 MHz

TGL2210-SM_EVB GHz 100 Watt VPIN Limiter. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information

TGA2238-CP 8 11 GHz 50 W GaN Power Amplifier

Data Sheet. AMMP to 40 GHz GaAs MMIC Sub-Harmonic Mixer In SMT Package. Description. Features. Applications.

= +25 C, IF= 100 MHz, LO = +17 dbm*

OBSOLETE HMC908LC5 MIXERS - I/Q MIXERS, IRMS & RECEIVERS - SMT. GaAs MMIC I/Q DOWNCONVERTER 9-12 GHz. Typical Applications. Functional Diagram

HMC219AMS8 / 219AMS8E. Features OBSOLETE. = +25 C, As a Function of LO Drive. LO = +13 dbm IF = 100 MHz

OBSOLETE HMC422MS8 / 422MS8E. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram

Data Sheet. ALM MHz 870 MHz Low Noise, High Linearity Amplifier Module with Fail-Safe Bypass Feature. Description.

HMC581LP6 / 581LP6E MIXERS - SMT. HIGH IP3 RFIC DUAL DOWNCONVERTER, MHz. Typical Applications. Features. Functional Diagram

Parameter Min. Typ. Max. Min. Typ. Max. Units

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Data Sheet. MGA GHz WLAN Power Amplifier Module. Description. Features. Component Image. Applications. Pin Configuration

1.5 GHz to 4.5 GHz, GaAs, MMIC, Double Balanced Mixer HMC213BMS8E

HMC814LC3B FREQ. MULTIPLIERS - ACTIVE - SMT. SMT GaAs MMIC x2 ACTIVE FREQUENCY MULTIPLIER, GHz OUTPUT. Features. Typical Applications

Features. = +25 C, As a Function of LO Drive

TGA GHz 1W Power Amplifier

Features. Parameter Min. Typ. Max. Units

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

QPC6222SR GENERAL PURPOSE DPDT TRANSFER SWITCH. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

TGA GHz 30W GaN Power Amplifier

No need for external driver, saving PCB space and cost.

Features. = +25 C, IF = 1 GHz, LO = +13 dbm*

The Hmc869LC5 is ideal for: Point-to-Point and Point-to-Multi-Point Radio. Parameter Min. Typ. Max. Units

Features OBSOLETE. = +25 C, As a Function of LO Drive. LO = +13 dbm IF = 100 MHz

SP6T RF Switch JSW6-23DR Ω High Power 3W 5 to 2000 MHz. The Big Deal

Features. = +25 C, Vdd = +4.5V, +4 dbm Drive Level

QPB7425SR. 75 Ω 25 db CATV Amplifier ( MHz) Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

Features OBSOLETE. LO = +19 dbm, IF = 100 MHz Parameter

SUNSTAR 微波光电 TEL: FAX: v HMC750LP4 / 750LP4E 12.5 Gbps LIMITING AMPLIFIER

GaAs MMIC Double Balanced Mixer

CMD255C GHz High IP3 Fundamental Mixer. Features. Functional Block Diagram. Description

TGA GHz 5 W GaN Power Amplifier

GaAs MMIC Double Balanced Mixer

HMC485MS8G / 485MS8GE. Features OBSOLETE. = +25 C, LO = 0 dbm, IF = 200 MHz*, Vdd= 5V

Transcription:

Device Features OIP3 = 43.0 dbm @ 70 MHz Gain = 17.5 db @ 70 MHz Output P1 db = 20.5 dbm @ 70 MHz 50 Ω Cascadable Patented temperature compensation Patented over voltage protection Lead-free/RoHS-compliant SOT-89 SMT package Product Description BeRex s BIF5 is a high performance InGaP/ GaAs HBT MMIC amplifier, internally matched to 50 Ohms and uses a patented temperature compensation circuit to provide stable current over the operating temperature range without the need for external components and a patented over voltage protection circuit to protect a internal device. The BIF5 is designed for high linearity IF amplifier that requires excellent gain, high OIP3 and flatness. It is packaged in a RoHS-compliant with SOT-89 surface mount package. Applications Base station Infrastructure/RFID Commercial/Industrial/Military wireless system Typical Performance 1 Parameter Frequency Unit 70 140 250 500 800 MHz Gain 17.5 17.5 17.5 17.5 17.1 db S11-15.8-15.4-15.5-14.1-18.3 db S22-17.1-19.1-26.3-16.1-10.8 db OIP3 2 43.0 42.5 41.0 40.0 37.0 dbm P1dB 20.5 20.5 20.5 21.0 21.0 dbm Noise Figure 4.0 4.1 4.2 4.3 4.3 db 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system. 2 OIP3 _ measured with two tones at an output of 10 dbm per tone separated by 1 MHz. Min. Typical Max. Unit Bandwidth 5 800 MHz I C @ (Vc = 5V) 97 107 117 ma V C 5.0 V dg/dt -0.003 db/ C R TH 50 C/W Applications Circuit RF In C1 *C1, C2=100nF ± 5%; C3 = 100 pf ± 5%; C4 = 1000pF ±5% *C5 = 10uF; L1 = 1uH ±5% BT05VG2 BIF 5 *C1, C2 = 100pF; L1 = 33nH ±5% for RF Bandwidth L1 C3 C2 C4 C5 RF Out Vcc Absolute Maximum Ratings Parameter Rating Unit Operating Case Temperature -40 to +85 C Storage Temperature -55 to +155 C Junction Temperature +220 C Operating Voltage +6.0 V Supply Current 160 ma Input RF Power 23 dbm Operation of this device above any of these parameters may result in permanent damage. 1

V-I Characteristics BeRex SOT89 Evaluation Board BeRex Evaluation Board *Dielectric constant _ 4.2 *RF pattern width 52mil *31mil thick FR4 PCB Typical Device Data S-parameters (Vc=5V, Ic=107mA, T=25 C) 2

RF Bandwidth S-parameters (Vc=5V, Ic=107mA, T=25 C) 3

S-Parameter (Vdevice = 5.0V, Icc = 107mA, T = 25 C, calibrated to device leads) Freq S11 S11 S21 S21 S12 S12 S22 S22 [MHz] [Mag] [Ang] [Mag] [Ang] [Mag] [Ang] [Mag] [Ang] 100 0.635 175.5 8.232 175.6 0.066 0.3 0.155-12.0 500 0.627 157.0 7.315 159.7 0.072-1.4 0.178-62.9 1000 0.603 136.7 7.880 144.7 0.066-1.8 0.235-111.5 1500 0.580 118.0 6.733 131.1 0.070 2.4 0.322-151.7 2000 0.491 99.4 6.895 114.4 0.069-1.7 0.393 175.7 2500 0.471 86.3 6.953 104.4 0.071 5.1 0.470 147.9 3000 0.432 69.7 8.427 80.7 0.080-0.9 0.549 119.3 3500 0.415 63.8 7.474 53.8 0.079-0.9 0.608 97.8 4000 0.457 51.4 6.617 32.7 0.090-8.8 0.640 68.7 Typical Performance (Vd = 5V, Ic = 107mA, T = 25 C) Freq MHz 70 140 250 *500 800 S21 db 17.5 17.5 17.5 17.5 17.1 S11 db -15.8-15.4-15.5-14.1-18.3 S22 db -17.1-19.1-26.3-16.1-10.8 P1 dbm 20.5 20.5 20.5 21.0 21 OIP3 dbm 43 42.5 41.0 40.0 37 NF db 4.0 4.1 4.2 4.3 4.3 Typical Performance (Vd = 4.7V, Ic = 95mA, T = 25 C) Freq MHz 70 140 250 500 800 S21 db 17.6 17.5 17.4 17.4 17.1 S11 db -15.1-17.3-18.1-17.5-18.7 S22 db -14.3-13.7-14.1-14 -10.7 P1 dbm 19.6 20.2 20.1 20.4 20 OIP3 dbm 41 40.5 39.5 37 35.5 NF db 4.0 4.1 4.2 4.3 4.3 Typical Performance (Vd = 4.5V, Ic = 85mA, T = 25 C) Freq MHz 70 140 250 500 800 S21 db 17.4 17.4 17.5 17.4 17 S11 db -15.3-17.6-18.3-17.8-18.9 S22 db -14.2-13.5-13.9-13.9-10.6 P1 dbm 19.2 19.0 19.2 19.4 19.4 OIP3 dbm 40.0 41.0 38.5 36.5 35 NF db 4.0 4.1 4.2 4.3 4.3 4

Typical Performance (Vd = 4V, Ic = 63mA, T = 25 C) Freq MHz 70 140 250 500 800 S21 db 17.4 17.3 17.2 17.2 16.9 S11 db -16-18.6-19.5-18.9-20.1 S22 db -13.8-13.1-13.5-13.5-10.3 P1 dbm 17 17.5 17.7 17.5 17.2 OIP3 dbm 35.5 35.5 35 33 32 NF db 4.0 4.1 4.2 4.3 4.3 Typical Performance (Vd = 3.5V, Ic = 41mA, T = 25 C) Freq MHz 70 140 250 500 800 S21 db 17.1 17.0 16.9 16.8 16.5 S11 db -17.9-21.2-22.6-21.7-23.1 S22 db -13.1-12.3-12.6-12.6-9.8 P1 dbm 13.7 14.6 14.6 14.5 14.2 OIP3 dbm 29 29 29 27.5 27.5 NF db 4.0 4.1 4.2 4.3 4.3 5

Device Performance Pin-Pout-Gain 70MHz, 5V/107mA 140MHz, 5V/107mA 250MHz, 5V/107mA 500MHz, 5V/107mA 900MHz, 5V/107mA 6

OIP3 7

ACPR 8

ACLR S-Parameters over Temperature 9

Package Outline Dimension Suggested PCB Land Pattern and PAD Layout PCB Land Pattern PCB Mounting 0.40 1.30 0.40 Ø0.40 0.40 0.75 1.20 2.15 1.20 1.20 1.50 1.00 0.45 1.20 0.50 2.80 0.65 0.35 Note : All dimension _ millimeters PCB lay out _ on BeRex website 10

Package Marking Tape & Reel SOT89 Packaging information: Tape Width (mm): 12 Reel Size (inches): 7 YY = Year, WW = Working Week, XX = Wafer No. Device Cavity Pitch (mm): 8 Devices Per Reel: 1000 Lead plating finish 100% Tin Matte finish (All BeRex products undergoes a 1 hour, 150 degree C, Anneal bake to eliminate thin whisker growth concerns.) MSL / ESD Rating ESD Rating: Value: Test: Standard: Class 1C Passes <2000V Human Body Model (HBM) JEDEC Standard JESD22-A114B MSL Rating: Standard: Level 1 at +265 C convection reflow JEDEC Standard J-STD-020 NATO CAGE code: 2 N 9 6 F 11