GHz High Dynamic Range Amplifier

Similar documents
DC-6.0 GHz 1.0W Packaged HFET

CMD197C GHz Distributed Driver Amplifier

Description. Specifications

Monolithic Amplifier GVA-60+ Flat Gain, High IP to 5 GHz. The Big Deal

TGA2239. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information. Part No.

Features. Parameter Min. Typ. Max. Min. Typ. Max. Units

TGA2218-SM GHz 12 W GaN Power Amplifier

Features. = +25 C, Vs = 5V, Vpd = 5V

50~100MHz. 100~210MHz C2 1nF. Operating Case Temperature -40 to +85 Storage Temperature -55 to +155 Junction Temperature +126 Operating Voltage

15-32 GHz GaAs MMIC Voltage Variable Attenuator EWA4001YB. Voltage Variable Attenuator - Packaged. Device Photo. Features.

OBSOLETE HMC215LP4 / 215LP4E. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram

* Notices. Operating Case Temperature -40 to +85 Storage Temperature -55 to +155 Junction Temperature +126 Operating Voltage.

FH1. Functional Diagram. Product Description. Product Features. Applications. Typical Performance (6) Specifications (1) Absolute Maximum Rating

OBSOLETE HMC422MS8 / 422MS8E. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram

HMC581LP6 / 581LP6E MIXERS - SMT. HIGH IP3 RFIC DUAL DOWNCONVERTER, MHz. Typical Applications. Features. Functional Diagram

QPL GHz GaN LNA

AH125 ½ W High Linearity InGaP HBT Amplifier

1 Watt High Linearity, High Gain InGaP HBT Amplifier. Product Description

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

RF2360 LINEAR GENERAL PURPOSE AMPLIFIER

TGA2807-SM TGA2807. CATV Ultra Linear Gain Amplifier. Applications. Ordering Information. CATV EDGE QAM Cards CMTS Equipment

Power Amplifier 0.5 W 2.4 GHz AM TR Features. Functional Schematic. Description. Pin Configuration 1. Ordering Information

Features. Parameter Min. Typ. Max. Units

CMD179C GHz Fundamental Mixer. Features. Functional Block Diagram. Description

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Features. = +25 C, LO = 0 dbm, Vcc = Vcc1, 2, 3 = +5V, G_Bias = +2.5V *

CMD180C GHz Fundamental Mixer. Features. Functional Block Diagram. Description

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Not recommended for new designs

CMD255C GHz High IP3 Fundamental Mixer. Features. Functional Block Diagram. Description

Features. Specification Min. Typ. Max. Input Return Loss MHz db. Output Return Loss MHz db. Reverse Isolation -22.

MAMX Sub-Harmonic Pumped Mixer GHz Rev. V1. Functional Schematic. Features. Description. Pin Configuration 1

CMD183C GHz I/Q Mixer. Features. Functional Block Diagram. Description

CMD257C GHz High IP3 I/Q Mixer. Features. Functional Block Diagram. Description

CMD176P GHz 4-Bit Digital Phase Shifter. Features. Functional Block Diagram. Description

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

DATASHEET ISL Features. Ordering Information. Applications. Typical Application Circuit. MMIC Silicon Bipolar Broadband Amplifier

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

1 W SP3T SWITCH. Part Number Order Number Package Marking Supplying Form G5M

QPA2626D GHz Low Noise Amplifier

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Typical Performance 1

TGA GHz 5 W GaN Power Amplifier

CMD178C GHz Fundamental Mixer. Features. Functional Block Diagram. Description

Item Symbol Test. Drain Voltage VDD 5 Gate Voltage (for Gain Control) VGC -0.5 to 0 Input RF Power Pin <= 0

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

HMC485MS8G / 485MS8GE. Features OBSOLETE. = +25 C, LO = 0 dbm, IF = 200 MHz*, Vdd= 5V

GaAs MMIC Double Balanced Mixer. Description Package Green Status

Typical Performance 1

DATASHEET ISL Features. Applications. Ordering Information. Typical Application Circuit. MMIC Silicon Bipolar Broadband Amplifier

OBSOLETE HMC423MS8 / 423MS8E MIXERS - DBL-BAL - SMT. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications.

TGA GHz 30W GaN Power Amplifier

4W High Linearity InGaP HBT Amplifier. Product Description

GaAs, MMIC Fundamental Mixer, 2.5 GHz to 7.0 GHz HMC557A

GHz Wideband High Linearity LNA Gain Block. Typical Performance 1

+25 dbm MATCHED POWER AMPLIFIER FOR Bluetooth TM Class 1

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

TGA4541-SM Ka-Band Variable Gain Driver Amplifier

Typical Performance 1. 2 OIP3 _ measured on two tones with a output power 8 dbm/ tone, F2 F1 = 1 MHz. +5V. RFout. Absolute Maximum Ratings

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

Features. Parameter Min. Typ. Max. Units

Parameter Min. Typ. Max. Min. Typ. Max. Units

Preliminary Datasheet

TGP2109-SM GHz 6-Bit Digital Phase Shifter. Product Description. Functional Block Diagram. Product Features. Applications. Ordering Information

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Typical Performance 1. 2 OIP3 _ measured with two tones at an output of 7 dbm per tone separated by 1 MHz. Absolute Maximum Ratings

6GHz Medium Power SPDT Switch

Features. = +25 C, Vdd = +4.5V, +4 dbm Drive Level

The Hmc869LC5 is ideal for: Point-to-Point and Point-to-Multi-Point Radio. Parameter Min. Typ. Max. Units

Features. = +25 C, LO = 0 dbm, Vcc = Vcc1, 2, 3 = +5V, G_Bias = +2.5V *

HMC219AMS8 / 219AMS8E. Features OBSOLETE. = +25 C, As a Function of LO Drive. LO = +13 dbm IF = 100 MHz

SKY LF: GHz Two-Stage, High Linearity and High Gain Low-Noise Amplifier

Features OBSOLETE. LO = +19 dbm, IF = 100 MHz Parameter

L, S-band Medium Power SPDT Switch

ES/SMM5143XZ. Preliminary GHz Up converter MMIC ABSOLUTE MAXIMUM RATING RECOMMENDED OPERATING CONDITIONS

1.5 GHz to 4.5 GHz, GaAs, MMIC, Double Balanced Mixer HMC213BMS8E

Features OBSOLETE. = +25 C, IF = 1.45 GHz, LO = +13 dbm [1]

Features OBSOLETE. = +25 C, As a Function of LO Drive. LO = +10 dbm. IF = 70 MHz

QPC1022TR7. Broad Band Low Distortion SPDT Switch. General Description. Product Features. Functional Block Diagram RF1612.

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

L, S-band Medium Power SPDT Switch

HMC187AMS8 / 187AMS8E. Features OBSOLETE. = +25 C, As a Function of Drive Level

TGA2238-CP 8 11 GHz 50 W GaN Power Amplifier

Features. = +25 C, IF = 100 MHz, LO = 0 dbm, Vcc1, 2, 3, = +5V, G_Bias = +3.5V*

QPC6222SR GENERAL PURPOSE DPDT TRANSFER SWITCH. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information

HMC412MS8G / 412MS8GE

Features OBSOLETE. = +25 C, As a Function of LO Drive. LO = +13 dbm IF = 70 MHz

GHz GaAs MMIC Image Reject Mixer

TGA2958-SM GHz 2 W GaN Driver Amplifier

Data Sheet. AMMP to 40 GHz GaAs MMIC Sub-Harmonic Mixer In SMT Package. Description. Features. Applications.

TGP Bit Digital Phase Shifter

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

SKY LF: GHz Ultra Low-Noise Amplifier

Parameter Min. Typ. Max. Units. Frequency Range 5 20 GHz. Minimum Insertion Loss db. Dynamic 5 GHz 23 db

Features. = +25 C, Vdd = +7V, Idd = 820 ma [1]

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

6 GHz to 26 GHz, GaAs MMIC Fundamental Mixer HMC773A

Typical Performance 1. 1 Device performance _ measured on a BeRex evaluation board at 25 C, 50 Ω system.

RFOUT/ VC2 31 C/W T L =85 C

GaAs MMIC Double Balanced Mixer

Transcription:

Features.2 to 6. GHz Range +41 dbm Output IP3 1.7 db db +23 dbm P1dB LGA Package Single Power Supply Single Input Matching The is a high dynamic range amplifier designed for applications operating within the.2 to 6. GHz frequency range. It is an ideal solution for numerous transmit and receive functions in wireless local loop (WLL) and UNH applications where high linearity is required. The amplifier has the flexibility of being optimized for a number of wireless applications. It is an ideal solution when used as a driver amplifier in applications including cellular and PCS (personal communications services) operating from.8 to 2.2 GHz; MMDS (multichannel multipoint distribution systems) operating from 2.2 to 2.7 GHz; WLAN (wireless LAN) operating at 2.4 GHz; WiMAX and WLL (wireless local loop) operating at 3. GHz; and HiperLAN (high performance LAN) and U-NII (unlicensed national information infrastructure) operating from. to 6. GHz. The is packaged in a low-cost, space efficient, Land Grid Array (LGA) package which provides excellent electrical stability and low thermal resistance. All devices are 1% RF and DC tested. With single input matching the part simplifies design by keeping board space and cost to a minimum. INPUT Supply Voltage RF Input Power* Storage Temperature Junction Temperature Operating Temperature Thermal Resistance Functional Block Diagram ALL OTHER PINS GROUNDED Absolute Maximum Ratings Applications Pin 1 OUTPUT (BIAS) +6. V +2 dbm -ºC to 12ºC ºC -4ºC to +8ºC ºC/W Operation of this device above any of these parameters may cause permanent damage. *Operation with more than 1 dbm of RF input power may cause 2 db degradation in performance. Wireless Local Loop Transmit and Receive UNH Transmit and Receive Dual Band 82.11 WLAN WiMAX LAN Electrical Characteristics (T=2ºC) Unless otherwise specified, the following specifications are guaranteed at room temperature in a Mimix test fixture. Parameter Condition Min Typ Max Units Range.2 6. GHz Externally matched 13. db Externally matched -1 db Output IP3 38 41 dbm 1.7 db Output P1dB 23. dbm Operating Current Range 12 18 ma Supply Voltage. V Notes: 1. T = 2ºC, Vdd = V, = 2.1 GHz, Ohm system. 2. measured with two tones at output power of 1 dbm/tone separated by 1 MHz. Page 1 of 7

Application Circuit (836 MHz) ( Ohm System) 836 MHz 836 MHz 17 db -2 db -2 db 4 dbm 2. db Vd = V, Id = 17mA, 26º, 14º Inductor L1 63, 8.2 nh Inductor L2 63,.1 nh Capacitor C1, C 8, 1 pf Capacitor C2 63, 1 nf Capacitor C4 63, 3.9 pf Capacitor C3 SMD, TANT, 16V, 1 uf dbm/tone separated by 1 MHz, and vs 2 1 - -1 - S11 S22 S21-2 -2..2.4.6.8 1. 1.2 1.4 1.6 1.8 2. Page 2 of 7

Application Circuit (2.1 GHz) ( Ohm System) 2.1 GHz.8 db -17 db -19 db 4 dbm 2.9 db Vd = V, Id = 17mA Inductor L1 63, 1. nh Inductor L2 63, 6.8 nh Capacitor C1, C6 8, 1 pf Capacitor C2 63, 1.8 pf Capacitor C3 63, 1 nf Capacitor C4 SMD, TANT, 16V, 1 uf dbm/tone separated by 1 MHz Capacitor C 63,. pf, and vs 2 1 - -1 - -2 S11 S21 S22-2.8 1. 1.2 1.4 1.6 1.8 2. 2.2 2.4 2.6 2.8 Page 3 of 7

Application Circuit (3. GHz) ( Ohm System) 3. GHz 13. db 3. GHz T1, 17º T2, 1º -13 db -26 db 4 dbm 3.2 db Vd = V, Id = 17mA Vdd GND RF IN RF OUT Inductor L1 63, +/-.3, 1. nh Inductor L2 63, +/-.3, 1. nh Inductor L3 63, 1%, 6.8 nh Capacitor C1, C 8, 1 pf Capacitor C2 63, 1 pf Capacitor C4 63,. pf Capacitor C3 SMD, TANT, 16V, 1 uf dbm/tone separated by 1 MHz 2 1 - -1, Input and vs. - -2 S11 S21 S22-2 3. 3.1 3.2 3.3 3.4 3. 3.6 3.7 3.8 3.9 4. Page 4 of 7

Application Circuit (.8 GHz) ( Ohm System).8 GHz 1. db -. db -22. db 4 dbm 3.9 db Vd = V, Id = 17mA Inductor L1 63, +/-.3, 1. nh Inductor L2 63, +/-.3, 1.8 nh Inductor L3 63, 1%, 6.8 nh Capacitor C1, C4 8, 1 pf Capacitor C2 63, 1 pf vs Temperature @.8 GHz Capacitor C3 SMD, TANT, 16V, 1 uf IP3 vs Temperature @.8 GHz dbm/tone separated by 1 MHz 2 1 - -1, Input and vs. - -2 S11 S21 S22-2..6.7.8.9 6. Page of 7

Physical Dimensions 2.87 3.13.113.123 1.14 1.34.4.3 Dimensions in millimeters/inches Mounting Recommendation *Board substrate: RO-43 Thickness = 31 mil *Ground vias are critical to RF and thermal grounding considerations. MTTF These numbers were calculated based on accelerated life test information received from the fabrication foundry and measured thermal resistance. 1.E+9 Vd=. V, Id= ma 16 Vd=. V, Id= ma 14 MTTF (hours) 1.E+8 1.E+7 Tch (deg C) 12 1 8 6 4 2 1.E+6 6 7 8 9 1 11 Backplate Temperature (deg C) 4 6 7 8 9 1 11 Backplate Temperature (deg C) Page 6 of 7

Handling and Assembly Information CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Package Attachment - This packaged product from Mimix Broadband is provided as a rugged surface mount package compatible with high volume solder installation. Care should be taken not to apply heavy pressure to the top or base material to avoid package damage. Vacuum tools or other suitable pick and place equipment may be used to pick and place this part. Care should be taken to ensure that there are no voids or gaps in the solder connection so that good RF, DC and ground connections are maintained. Voids or gaps can eventually lead not only to RF performance degradation, but reduced reliability and life of the product due to thermal stress. Mimix Lead-Free RoHS Compliant Program - Mimix has an active program in place to meet customer and governmental requirements for eliminating lead (Pb) and other environmentally hazardous materials from our products. All Mimix RoHS compliant components are form, fit and functional replacements for their non-rohs equivalents. Lead plating of our RoHS compliant parts is 1% matte tin (Sn) over copper alloy and is backwards compatible with current standard SnPb low-temperature reflow processes as well as higher temperature (26 C reflow) Pb Free processes. Ordering Information Part Number for Ordering - -T PB--A PB--B PB--C PB--D PB--F Package RoHS compliant LGA surface-mount power package in bulk quantity RoHS compliant LGA surface-mount power package in tape and reel Evaluation Board with SMA connectors for 9 MHz Evaluation Board with SMA connectors for 2.1 GHz Evaluation Board with SMA connectors for 3. GHz Evaluation Board with SMA connectors for.8 GHz Evaluation Board with SMA connectors for 2. GHz Caution: ESD Sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Proper ESD procedures should be followed when handling this device. Page 7 of 7