1 : 10) (2.5 V 3.3 V)
|
|
- Matthew Higgins
- 6 years ago
- Views:
Transcription
1 I 2 C interface-compatible color sensor The is a digital color sensor that supports the I 2 C (inter-integrated circuit) interface. It is sensitive to red (λ=615 nm), green (λ=530 nm), blue (λ=460 nm), and infrared (λ=855 nm) light, and outputs detected results as 16- bit digital data for each color. The photodiode for each color is automatically switched sequentially to perform measurements. The sensitivity and integration time can be adjusted so that light measurements can be performed over a wide range. Features I 2 C interface compatible Sequential measurements of red, green, blue, and infrared light 2-step sensitivity switching (sensitivity ratio 1 : 10) Sensitivity adjustment by setting the integration time Low voltage (2.5 V or 3.3 V) operation Low current consumption: 75 μ typ. With internal infrared-cut filter Wide dynamic range (Low gain: 1 to 10 klx) Standard packing state S DT: reel S DS: stick pplications LCD backlight adjustment for cell phones, notebook PC, etc. Energy-saving sensor for large-size TV, etc. Various types of light detection or color adjustment bsolute maximum ratings Parameter Symbol Condition Value Unit Supply voltage Vdd Ta=25 C -0.3 to +6 V Output current Io Ta=25 C ±10 m Power dissipation P Ta=25 C 300 mw Operating temperature Topr No dew condensation* 1-25 to +80 C Storage temperature Tstg No dew condensation* 1-40 to +85 C eflow soldering conditions* 2 Tsol Peak temperature 240 C max., 1 time (see page 10) - *1: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. *2: Moisture absorption and reflow conditions: JEDEC J-STD-020D LEVEL5a Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. lways be sure to use the product within the absolute maximum ratings. ecommended operating conditions Parameter Symbol Condition Min. Typ. Max. Unit Supply voltage Vdd V High level input voltage (SD, SCL)* 3 Vih 0.7Vdd - Vdd V Low level input voltage (SD, SCL)* 3 Vil Vdd V us capacitance (SD, SCL) Cbus pf *3: Set so that Vdd=Vbus. Normal operation cannot be guaranteed unless used with this condition. 1
2 Electrical and optical characteristics Sensor section [Ta=25 C, Vdd=Vbus=3.3 V, light source, unless otherwise noted (initial setting: low gain, integration time: 546 ms/ch)]* 4 Parameter Symbol Condition Min. Typ. Max. Unit lue 400 to 540 Spectral response range* 5 λ reen 455 to 630 ed 575 to 660 nm Infrared, more than 700 nm 785 to 885 lue Peak sensitivity wavelength λp reen ed nm Infrared, more than 700 nm Operating mode Idd E=0 lx (dark state), Current consumption Standby mode Idds excluding output current μ Dark count Sd E=0 lx (dark state) counts ain ratio rg High gain/low gain Sbl lue Photosensitivity Low gain Sgl reen Initial setting Srl ed Sgl reen Initial setting* Srl ed Sirl Infrared Sbl lue counts/lx Sirl Infrared ed/lue sensi. ratio Srl/Sbl Initial setting ed/reen sensi. ratio Low gain Srl/Sgl Same chip lue/reen sensi. ratio Sbl/Sgl Sbh lue Sgh reen Integration time Srh ed 546 ms/ch Photosensitivity High gain Sirh Infrared Sbh lue counts/lx Sgh reen Integration time Srh ed 546 ms/ch* Sirh Infrared ed/lue sensi. ratio Srh/Sbh Integration time 546 ms/ch ed/reen sensi. ratio High gain Srh/Sgh Same chip lue/reen sensi. ratio Sbh/Sgh *4: Provide light shielding so that no light enters from anywhere other than the top surface of the filter. *5: elative sensitivity=more than 10% *6: Integration time is measured and corrected. See "Compensation method for sensitivity variation". Integration time measurement accuracy is 0.36%. I 2 C section (Ta=25 C, Vdd=3.3 V, unless otherwise noted) Parameter Symbol Condition Min. Typ. Max. Unit I 2 C address DD 7 bits 0x2 ( ) - I 2 C clock frequency fclk khz SD, SCL output voltage High level Voh p=2.2 kω 0.7 Vbus - - V Low level Vol p=2.2 kω V Input/output terminal capacitance Ci pf SD/SCL output fall time* 7 tf p=2.2 kω, Cp=400 pf ns *7: SCL/SD output rise time is determined by a time constant of Cbus p. Note: The I 2 C interface (SD, SCL) timings conform to the "I 2 C bus specification version 2.1". 2
3 egister map drs Function bit Control DC reset Standby function ain selection Integration mode Integration time setting Standby function 1: eset 1: Standby mode - 1: High gain 1: Manual setting mode (00) 87.5 μs, (01) 1.4 ms monitor 0: Operation 0: Operating mode 0: Low gain 0: Fixed period mode (10) 22.4 ms, (11) ms 01 Integration time manual setting register (MS) Manual timing register 02 Integration time manual setting register (LS) 03 register Output data (red, MS) 04 (red) Output data (red, LS) 05 register Output data (green, MS) 06 (green) Output data (green, LS) 07 register Output data (blue, MS) 08 (blue) Output data (blue, LS) 09 register Output data (infrared, MS) 0 (infrared) Output data (infrared, LS) drs 00 bit 7: sserting this bit to 1, the DC block is reset. The register data is not reset. To start the operation, set this bit to 0. drs 00 bit 6: sserting this bit to 1 the device goes into standby mode. The DC block stops its operation. The register data is not reset. To start the operation, set this bit to 0. drs 00 bit 5: This monitors auto standby function. 1 means standby mode. This is read only. drs 00 bit 3: ain selection bit. 1 is high gain mode and 0 is low gain mode. This bit is selecting the photodiode area. The size ratio of high gain photodiode area and low gain photodiode area is 10 : 1. Therefore the gain ratio is 10 times from low to high. drs 00 bit 2: sserting this bit to 1, the device goes into manual setting mode. Deasserting this bit to 0, goes into fixed period mode. In manual setting mode, the S DT automatically goes to standby mode after a measurement is made. In fixed period mode, measurements are continuously repeated. drs 00 bit 1,0: These bits select the period of internal basis clock. The period is equal to integration time per color in fixed period mode. 00 is 87.5 us, 01 is 1.4 ms, 10 is 22.4 ms, 11 is ms. In manual setting mode, 00 is 175 μs, 01 is 2.8 ms, 10 is 44.8 ms, 11 is 368 ms. The integration time per color is set to multiple value (drs 01 & 02) with the period. drs 01 & 02: This is a multiple value setting in manual setting mode, and can be set to a minimum of 0x0000 and a maximum of 0xFFFF (65535). This is used to set how far to expand the integration time per color which specified by Integration time setting (Tint). For example, if you want to set the integration time per color to 546 ms, set 175 μs by Tint= 00 and then set this register to N=3120 (0xC30). Mode Manual timing register (drs 01 & 02) Integration time setting (Tint) Fixed period mode Disabled 87.5 μs 1.4 ms 22.4 ms ms Manual setting mode N 175 N μs 2.8 N ms 44.8 N ms N ms drs 03 to 0: These bytes are register for sensor data. S DT measurement result is stored in these registers when the I 2 C command is changed to read mode. The values are kept until the next measurement cycle. Initial setting [Low gain, manual setting mode, Tint=00 (175 μs), integartion time 546 ms/ch] bit drs Function Hex Control xE x0C Manual timing register x30 3
4 Program example Condition 1: Initial setting [manual setting mode, low gain, Tint=00 (175 μs), integration time 546 ms/ch (0x0C30 is set in manual timing register)] Command ction Data body ck emark ddress call (0x2) S W 7-bit address egister call (0x00) Calls control byte egister write (0x84) DC reset, standby disabled ddress call (0x2) Sr W estart, address egister call (0x00) Calls control byte egister write (0x04) P DC reset disabled, bus release Wait longer than integration time (>2184 ms) ddress call (0x2) S W 7-bit address egister call (0x03) Calls output data byte ddress call (0x2) Sr Changes to read mode Data read out (: MS) X X X X X X X X Data read out (: LS) X X X X X X X X ed data output Data read out (: MS) X X X X X X X X Data read out (: LS) X X X X X X X X reen data output Data read out (: MS) X X X X X X X X Data read out (: LS) X X X X X X X X lue data output Data read out (Infrared: MS) X X X X X X X X Infrared data output Data read out (Infrared: LS) X X X X X X X X Ā P S=Start condition, Sr=estart condition, =cknowledge, =cknowledge by host, P=Stop condition, =ead mode (1), W=Write mode (0), Ā=not acknowledge Format S 0x2 (7 bits) W 0x00 0x84 Sr 0x2 (7 bits) W 0x00 0x04 P Wait S 0x2 (7 bits) W 0x03 Sr 0x2 (7 bits) P from master to slave from slave to master KPICC0334E 4
5 Condition 2 [fixed period mode, high gain, Tint=01 (1.4 ms), integration time 1.4 ms/ch] Command ction Data body ck emark ddress call (0x2) S W 7-bit address egister call (0x00) Calls control byte egister write (0x89) DC reset, standby disabled ddress call (0x2) Sr W 7-bit address egister call (0x00) Calls control byte esistor write (0x09) P DC reset disabled, bus release Wait longer than integration time (> 5.6 ms). Within this period, repeat measurement is continued. ddress call (0x2) S W 7-bit address egister call (0x03) Calls output data byte ddress call (0x2) Sr Changes to read mode Data read out (: MS) X X X X X X X X Data read out (: LS) X X X X X X X X ed data output Data read out (: MS) X X X X X X X X Data read out (: LS) X X X X X X X X reen data output Data read out (: MS) X X X X X X X X Data read out (: LS) X X X X X X X X lue data output Data read out (Infrared: MS) X X X X X X X X Infrared data output Data read out (Infrared: LS) X X X X X X X X Ā P S=Start condition, Sr=estart condition, =cknowledge, =cknowledge by host, P=Stop condition, =ead mode(1), W=Write mode(0), Ā=not acknowledge Format S 0x2 (7 bits) W 0x00 0x89 Sr 0x2 (7 bits) W 0x00 0x09 P Wait S 0x2 (7 bits) W 0x03 Sr 0x2 (7 bits) P from master to slave from slave to master KPICC0335E 5
6 Compensation method for sensitivity variation 1. Power on 2. Power on reset, initialization 3. DC reset enable, standby disable 4. Measurement condition setting ain, manual setting mode, integration time Sensitivity variation can be decreased using the compensation coefficient which is calculated from the integration time measurement result. Explanation of compensation method is shown as follows. Integration time measurement method In case of integration time measurement, it is necessary to set manual setting mode. The integration time measurement starts after DC reset disabled. To measure the finishing integration time (measurement) Tmeas, check Standby monitor bit until it becomes to DC reset disable 6. Measurement start (integration time) No Standby monitor = 1? Yes 7. Measurement end (integration time) 8. Data read out 9. Compensation KPICC0336E Compensation method The sensitivity compensation that used integration time is as follows: Tset K = Tmeas S' = S K K : compensation coefficient Tset : integration time (setting) Tmeas : integration time (measurement) S : photo sensitivity (measurement) S : photo sensitivity (compensation) Measurement accuracy of integration time The measurement minimum resolution of Tmeas is defined by the looping duration (Tunit). In case of default setting, the Tset is 2184 ms and assuming the Tunit to 7.8 ms, the accuracy of integration time is calculated by following formula. Tunit Tset = 100 = 0.36% 2184 The specification of compensated sensitivity is defined as 0.36% accuracy. elative sensitivity (%) Spectral response (typical example) (Ta=25 C) 100 ed 80 reen 60 lue Infrared Count value (counts) Count value vs. illuminance (typical example) [Initial setting (integration time 546 ms/ch, low gain), light source] 100 k ed 11.2 counts/lx 10 k reen 8.35 counts/lx 1 k lue 4.4 counts/lx Infrared 3.0 counts/lx k 10 k 100 k Wavelength (nm) KPIC0169E Illuminance (lx) KPIC0170E 6
7 lock diagram Infrared-cut filter DC Current - frequency converter Counter 16 egister I 2 C interface VDD SD SCL ND I Timer circuit SD: serial data SCL: serial clock KPICC0152E Timing chart of standby function Idd Current consumption Start mode Integration time Standby mode Idds Time I 2 C Command Initialization, measurement instruction eadout KPICC0158E Connection example Vbus 0.1 μf Vdd Vdd SCL S DT ND SD p 3 kω d 100 Ω d 100 Ω p 3 kω Micro-controller Cd 30 pf Cd 30 pf KPICC0185E 7
8 Dimensional outline (unit: mm) (10 ) 0.4 (9 ) ± 0.2 Including burr Filter ( ) Photosensitive surface ± 0.2 Including burr 4.0* Mirror area range 1.0 ± * 1.0 ± Mirror area range Vdd (ND) (ND) (ND) ND SCL (ND) (ND) (ND) SD ± Tolerance unless otherwise noted: ±0.1, ±2 Shaded area indicates burr. Chip position accuracy with respect to package dimensions marked* X, Y ±0.2, θ ±2 Standard packing state S DT: reel (1500 pcs/reel) S DS: stick (100 pcs/stick) KPIC0090ED Details of photosensitive area (unit: μm) High gain mode Low gain mode KPICC0153E 8
9 ecommended land pattern (unit: mm) 4.75 eel (conforms to JEIT ET-7200) Dimension Hub diameter Tape width Material Electrostatic characteristics 254 mm 80 mm 12 mm PS (polystyrene) Conductive Embossed tape (unit: mm, material: PS, conductive) +0.1 ϕ ± ± ± ± ± ± ± 0.3 (4.5) KPICC0223E Standard packing specifications (S DT) +0.1 ϕ1.5-0 (2.1) eel feed direction (2.5) (5.4) (0.4) (3.0) KPICC0197E Packing quantity 1500 pcs/reel Packing type eel and desiccant in moisture-proof packaging (vacuum-sealed) 9
10 Measured example of temperature profile with hot-air reflow oven for product testing 300 C 240 C max. 220 C Temperature 190 C 170 C Preheating 70 to 90 s ctual heating 40 s max. Time KPIC0164EC This product supports lead-free soldering. fter unpacking, store it in an environment at a temperature of 30 C or less and a humidity of 60% or less, and perform soldering within 24 hours. The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used. efore actual reflow soldering, check for any problems by testing out the reflow soldering methods in advance. Lineup of color sensors Type no. Photosensitive area (mm) S Photodiode ϕ2.0 S9702 S T S CT Digital S photo IC S C S DT /-03DS Type Photodiode Photodiode Photodiode Digital photo IC I 2 C compatible color sensor Package (mm) t 6 pin (filter 0.75 t ) t 4 pin (filter 0.75 t ) t CO (on-chip filter) t CO (on-chip filter) t 6 pin (filter 0.75 t ) t CO (on-chip filter) t 10 pin (on-chip filter) I 2 C t S WT compatible WL-CSP color sensor (on-chip filter) * efer to the spectral response of each product s datasheet. Peak sensitivity wavelength (nm) I * * Low Low Low Low I 0.18 (/W) [λ=460 nm] 0.23 (/W) [λ=540 nm] 0.16 (/W) [λ=620 nm] 0.18 (/W) [λ=460 nm] 0.23 (/W) [λ=540 nm] 0.16 (/W) [λ=620 nm] 0.2 (/W) [λ=460 nm] 0.23 (/W) [λ=540 nm] 0.17 (/W) [λ=620 nm] 0.21 (/W) [λ=460 nm] 0.25 (/W) [λ=540 nm] 0.45 (/W) [λ=640 nm] I 0.21 (LS/lx) 0.45 (LS/lx) 0.64 (LS/lx) 0.3 (LS/lx) 0.6 (LS/lx) 1.4 (LS/lx) 4.4 (count/lx) 8.3 (count/lx) 11.2 (count/lx) 3.0 (count/lx) Photosensitivity High High High 9.48 (count/lx) 7.61 (count/lx) 3.35 (count/lx) I I 1.66 (count/lx) I High 1.9 (LS/lx) 4.1 (LS/lx) 5.8 (LS/lx) 2.6 (LS/lx) 5.3 (LS/lx) 12.9 (LS/lx) 44.8 (count/lx) 85.0 (count/lx) (count/lx) 30.0 (count/lx) 94.5 (count/lx) 76.2 (count/lx) 31.7 (count/lx) 15.3 (count/lx) Photo 10
11 elated information Precautions Disclaimer Metal, ceramic, plastic package products Surface mount type products Information described in this material is current as of December Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. efore using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. HMMTSU PHOTONICS K.K., Solid State Division Ichino-cho, Higashi-ku, Hamamatsu City, Japan, Telephone: (81) , Fax: (81) U.S..: Hamamatsu Corporation: 360 Foothill oad, ridgewater, N.J , U.S.., Telephone: (1) , Fax: (1) , ermany: Hamamatsu Photonics Deutschland mbh: rzbergerstr. 10, D Herrsching am mmersee, ermany, Telephone: (49) , Fax: (49) , France: Hamamatsu Photonics France S...L.: 19, ue du Saule Trapu, Parc du Moulin de Massy, Massy Cedex, France, Telephone: 33-(1) , Fax: 33-(1) , United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin oad, Welwyn arden City, Hertfordshire L7 1W, United Kingdom, Telephone: (44) , Fax: (44) , info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden : Torshamnsgatan Kista, Sweden, Telephone: (46) , Fax: (46) , info@hamamatsu.se Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, rese (Milano), Italy, Telephone: (39) , Fax: (39) , info@hamamatsu.it China: Hamamatsu Photonics (China) Co., Ltd.: 1201, Jiaming Center, No.27 Dongsanhuan eilu, Chaoyang District, eijing , China, Telephone: (86) , Fax: (86) , hpc@hamamatsu.com.cn Taiwan: Hamamatsu Photonics Taiwan Co., Ltd.: 8F-3, No. 158, Section2, ongdao 5th oad, East District, Hsinchu, 300, Taiwan.O.C. Telephone: (886) , Fax: (886) , info@hamamatsu.com.tw 11 Cat. No. KPIC1082E08 Dec DN
12-bit digital output
S02-0C 2-bit digital output The S02-0C is a digital color sensor sensitive to red (λ=65 nm), green (λ= nm) and blue (λ=465 nm) regions of the spectrum. Detected signals are serially output as 2-bit digital
More informationColor/proximity sensor
Color sensor, proximity sensor, and 3-color LED incorporated into a single package This is a multifunctional sensor that incorporates a color sensor, proximity sensor, and 3-color LED in a small package
More informationParameter Symbol Specification Unit Photosensitive area - ɸ0.8 mm Package mm
Surface mount type, high-speed Si photodiode The is a Si PIN photodiode with sensitivities in the visible to near infrared range and is compatible with lead-free solder reflow. It features high-speed response
More informationParameter Specification Unit Photosensitive area mm Package Glass epoxy - Seal material Silicone resin -
COB type, applicable to lead-free solder reflow The is a for visible to near infrared range and is compatible with lead-free solder reflow processes. The small and thin leadless package allows reducing
More informationSi photodiode. Applicable to lead-free solder reflow and wide temperature range. S9674. Absolute maximum ratings
Applicable to lead-free solder reflow and wide temperature range The is a photodiode that is applicable to lead-free solder reflow and has an extremely wide operating and storage temperature range (-40
More informationM=100, RL=50 Ω λ=800 nm, -3 db
Low bias operation, for 800 nm band, small package Features Miniature and thin package:.8 3..0 t mm Stable operation at low bias High-speed response High sensitivity Low noise Applications Optical rangefinder
More informationParameter Specification Unit Photosensitive area mm Package Glass epoxy - Seal material Epoxy resin -
COB type, applicable to lead-free solder reflow The is a Si PIN photodiode for visible to near infrared range and is compatible with lead-free solder reflow processes. The small and thin leadless package
More informationPeak emission wavelength: 3.9 μm
Peak emission wavelength: 3.9 μm The is a high-output mid-infrared LED with a 3.9 µm peak emission wavelength. It is a product that has been achieved using Hamamatsu unique crystal growth technology and
More informationEffective photosensitive area. Photosensitive area size
High performance, high reliability Si PIN photodiodes The is a high-speed Si PIN photodiode having high sensitivity over a wide spectral range from visible to near infrared light. The provides high performance
More informationPhotosensitive area size (mm) Reverse voltage VR max (V) R to +60
,, 6 to 37 mm resistance length PSD for precision distance measurement Hamamatsu provides various types of one-dimensional PSD (position sensitive detector) designed for precision distance measurement
More informationRGB color sensor. Effective photosensitive area. Green, Red: 2.25 Blue : 4.5
Si photodiodes S6428-01 S6429-01 S6430-01 RGB color sensor The S6428-01, S6429-01 and S6430-01 are color sensors designed to respectively detect monochromatic colors of blue (λp=460 nm), green (λp=540
More informationPeak emission wavelength: 4.3 μm
Peak emission wavelength: 4.3 μm The is a mid infrared LED with a 4.3 μm peak emission wavelength. It is a product that has been achieved using Hamamatsu unique crystal growth technology and process technology.
More informationMPPC (multi-pixel photon counter)
MPPC (multi-pixel photon counter) Low afterpulses, wide dynamic range, for high-speed measurement Photosensitive area: 1 1 mm These MPPCs utilize very small pixels arrayed at high densities to achieve
More informationShort wavelength type APD. Effective photosensitive area (mm) Effective photosensitive area size* 2
Short wavelength type APD Features High sensitivity at visible range Low noise High gain Low capacitance Applications Low-light-level measurement Analytical instrument Structure / Absolute maximum ratings
More informationEffective photosensitive area (mm)
Chip carrier package for mount The, S5107, and S7510 are Si PIN photodiodes sealed in chip carrier packages suitable for mount using automated solder reflow techniques. These photodiodes have large photosensitive
More informationLow bias operation, for 800 nm band
Low bias operation, for 800 nm band These are 800 nm band near-infrared Si APDs that can operate at low voltages, 200 V or less. They are suitable for applications such as FSO (free space optics) and optical
More informationPhoto IC diode. Wide operating temperature: -40 to +105 C. S MT. Absolute maximum ratings (Ta=25 C)
Wide operating temperature: -40 to +05 C The photo IC has a spectral response close to human eye sensitivity. Two active areas are made on a single chip. Almost only the visible range can be measured by
More informationPhoto IC diode. Plastic package shaped the same as metal package. S SB. Features. Applications
Plastic package shaped the same as metal package The photo IC has spectral response close to human eye sensitivity. Two photosensitive areas are made on a single chip. Almost only the visible range can
More informationPower supply for MPPC
Power supply for MPPC C1104-0 Bias power supply with built-in high precision temperature compensation for MPPCs The C1104-0 is a high voltage power supply that is optimized for MPPCs (multi-pixel photon
More informationSi PIN photodiodes. High-speed detectors with plastic package. Structure. Absolute maximum ratings
High-speed detectors with plastic package The and are high-speed APC (auto power control) detectors developed for monitoring laser diodes with a peak wavelength of 66 nm or 78 nm. The is designed for surface
More informationReduced color temperature errors
Reduced color temperature errors The is a photo IC diode with spectral response characteristics that closely resemble human eye sensitivity. Two active areas are formed on the same chip, and the outputs
More informationOptics modules. Absorbance measurement module with built-in photodiode array, optical elements, current-tovoltage. C13398 series.
Absorbance measurement module with built-in photodiode array, optical elements, current-tovoltage converter, etc. The is an optics module for absorbance measurement featuring high blocking performance
More informationMPPC modules. MPPC array modules for very-low-level light detection, 16 ch analog output. C13368/C13369 series (Analog output type)
MPPC modules C13368/C13369 series (Analog output type) MPPC array modules for very-low-level light detection, 16 ch analog output The C13368/C13369 series (analog output type) is an optical measurement
More informationApplications. Photosensitive area size. Storage temperature Tstg (mm) (mm 2 ) (V) ( C) ( C) S
, etc. Photodiodes molded into clear plastic packages These are Si photodiodes molded into clear plastic packages. Two types are available with sensitivity in the visible range and in the visible to near
More informationEffective photosensitive area (mm) Photosensitive area size
High UV resistance, photodiodes for UV monitor The are Si photodiodes that have achieved high reliability for monitoring ultraviolet light by employing a structure that does not use resin. They exhibit
More informationPhotosensor with front-end IC
Compact APD suitable for various light level detection The is a compact optical device that integrates a Si APD and preamp. It has a built-in DC feedback circuit for reducing the effects of background
More informationBetween elements measure. Photosensitive area (per 1 element)
16, 35, 46 element Si photodiode array for UV to NIR The are Si photodiode linear array mounted in ceramic DIPs (Dual Inline Packages). These photodiode arrays are primarily developed for low-light-level
More informationPhoton counting module
Photon counting module Fiber coupling type, low-light-level detection The is a photon counting module that can detect low-level light. It consists of a TE-cooled single pixel photon counter (SPPC), signal
More informationSi PIN photodiodes. High-speed detectors with plastic package. Structure. Absolute maximum ratings
High-speed detectors with plastic package The and are high-speed APC (auto power control) detectors developed for monitoring laser diodes with a peak wavelength of 66 nm or 78 nm. The is designed for surface
More informationReverse voltage VR max. Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted) Short. Temp. S coefficient (A/W) of
Ceramic package photodiodes with low dark current The are ceramic package photodiodes that offer low dark current. Ceramic package used is light-impervious, so no stray light can reach the photosensitive
More informationPhoto IC diode. Plastic package shaped the same as metal package. S SB. Absolute maximum ratings (Ta=25 C)
Plastic package shaped the same as metal package The photo IC has spectral response close to human eye sensitivity. Two photosensitive areas are made on a single chip. Almost only the visible range can
More informationPower supply for MPPC
Power supply for MPPC C1104-0 Bias power supply with built-in high precision temperature compensation for MPPCs The C1104-0 is a high voltage power supply that is optimized for MPPCs (multi-pixel photon
More informationPhoto IC diode. COB (chip on board) type, small package. S CT. Absolute maximum ratings
COB (chip on board) type, small package mm The photo IC has spectral response close to human eye sensitivity. Two photosensitive areas are made on a single chip. Almost only the visible range can be measured
More informationThese Si photodiodes have sensitivity in the UV to near IR range. They are suitable for low-light-level detection in analysis and the like.
UV to near IR for precision photometry These Si photodiodes have sensitivity in the UV to near IR range. They are suitable for low-light-level detection in analysis and the like. Features High sensitivity
More informationMPPC (Multi-Pixel Photon Counter)
S13362-35DG Significantly reduced crosstalk, low afterpulses The can reduce dark count by cooling in addition to low afterpulses and low crosstalk of the S1336 series. The integrates the S1336 series with
More informationInAsSb photovoltaic detectors
High-speed response and high sensitivity in the spectral band up to 11 μm Infrared detectors The are photovoltaic type infrared detectors that have achieved high sensitivity in the spectral band up to
More informationApplication OCT. Dimensions (mm) Weight (g) Operating temperature* 1 Storage temperature* 1 λ=1.55 μm (V) (mw)
Balanced detectors with reduced multiple reflections These are differential amplification type photoelectric conversion modules containing two Hamamatsu photodiodes with balanced characteristics. The photodiodes
More informationInGaAs PIN photodiode arrays
16/32/46 element InGaAs array for near IR detection The is one-dimensional InGaAs PIN photodiode array in a ceramic DIP (dual inline package). It can be used to perform simple spectroscopic analysis. Features
More informationSuppressed IR sensitivity
For UV to visible, precision photometry; suppressed IR sensitivity These Si photodiodes have suppressed IR sensitivity. They are suitable for low-light-level detection in analysis and the like. Features
More informationEffective photosensitive* 2 area size. Storage temperature Tstg (mm) ( C) ( C) S φ0.2 φ0.5 S φ to to +100 S9075
/-05/-10, S5344, S5345 Short wavelength type APD, for 600 nm band These are short wavelength APDs with improved sensitivity in the UV to visible range. They offer high gain, high sensitivity, and low noise
More informationMPPC (Multi-Pixel Photon Counter)
MPPC (Multi-Pixel Photon Counter) MPPCs in a chip size package miniaturized through the adoption of TSV structure The are MPPCs for precision measurement miniaturized by the use of TSV (through-silicon
More informationDriver circuit for InGaAs linear image sensor
Driver circuit for InGaAs linear image sensor [G11620 series (non-cooled type)] The is a driver circuit developed for InGaAs linear image sensors [G11620 series (non-cooled type)]. The driver circuit consists
More informationInAsSb photovoltaic detector
InAsSb photovoltaic detector P12691-21 High-speed response and high sensitivity in the 8 μm spectral band Thermoelectrically cooled infrared detector with no liquid nitrogen required The P12691-21 is an
More informationDriver circuit for CMOS linear image sensor
Driver circuit for CMOS linear image sensor C13015-01 For CMOS linear image sensor S11639-01, etc. The C13015-01 is a driver circuit developed for Hamamatsu CMOS linear image sensor S11639-01, etc. By
More informationSignal processing circuit for 2-D PSD
Signal processing circuit for 2-D PSD Circuit board for easier 2-D PSD operation The is a DC signal processing circuit for two-dimensional PSD. It is suitable for displacement measurements using DC light.
More informationDriver circuit for MPPC
Simple evaluation starter kit for non-cooled s The is a starter kit designed for simple non-cooled evaluations. It consists of a sensor board and a power supply board. The sensor board includes an socket
More information1-D PSD with small plastic package
1D PSD with small plastic package Hamamatsu offers a variety of 1D PSDs (position sensitive detectors) molded into plastic packages. These PSDs feature excellent position detection resolution, high resistance
More informationNon-discrete position sensors utilizing photodiode surface resistance
Twodimensional PSD Nondiscrete position sensors utilizing photodiode surface resistance PSD (position sensitive detector) is an optoelectronic position sensor utilizing photodiode surface resistance. Unlike
More informationInAsSb photovoltaic detectors
High-speed response and high sensitivity in the spectral band up to 5 μm Infrared detectors The are photovoltaic type infrared detectors that have achieved high sensitivity in the spectral band up to 5
More informationDriver circuit for InGaAs linear image sensor
(G11135 series, G14006-512DE) The is a driver circuit developed for InGaAs linear image sensors (G11135 series, G14006-512DE). The driver circuit consists of an analog video signal processing circuit (16-bit
More information16-element Si photodiode arrays
Back-illuminated photodiode arrays for X-ray nondestructive inspection (element pitch: mm) The is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X- ray inspection.
More informationAPD modules. Operates an APD with single 5 V supply (standard type, short-wavelength type) C12702 series.
Operates an APD with single 5 V supply (standard type, short-wavelength type) Features Includes a high-sensitivity APD Uses a Hamamatsu high-sensitivity Si APD. Four types are available with different
More informationSignal processing circuit for 1-D PSD
Signal processing circuit for 1-D PSD Circuit board for easier 1-D PSD operation The is a DC signal processing circuit for one-dimensional PSD. It is suitable for displacement measurements using DC light.
More informationPeak sensitivity wavelength λp (nm) Photosensitive area (mm)
Integrates a -PSD for precision photometry or a 4-segment Si photodiode with low-noise amp in a compact case PSD modules contain a high-precision two-dimensional PSD (position sensitive detector) or a
More informationDriver circuit for CCD linear image sensor
For CCD image sensor (S11151-2048) The is a driver circuit designed for Hamamatsu CCD image sensor S11151-2048. The can be used in spectrometers when combined with the S11151-2048. The holds a CCD driver
More information16-element Si photodiode arrays
Back-illuminated photodiode arrays for X-ray nondestructive inspection (element pitch: mm) The is a back-illuminated type 16-element photodiode array specifically designed for non-destructive X-ray inspection.
More informationAPD modules. APD module integrated with peripheral circuits. C12703 series. Selection guide. Block diagram
APD module integrated with peripheral circuits Features Uses a high sensitivity APD Two types of APDs with different photosensitive areas (φ1.5 mm, φ3. mm) are provided. On-board high sensitivity circuit
More information16-element Si photodiode arrays
S11212-421 S11212-321 S11212-021 S11212-121 Back-illuminated photodiode arrays for non-destructive inspection The is a back-illuminated type 16-element photodiode array specifically designed for non-destructive
More informationAccessories for infrared detector
Temperature controllers Heatsinks for TE-cooled detector Chopper, etc. Wide lineups of accessories for infrared detector HAMAMATSU provides temperature controllers, heatsinks for TE-cooled detector, chopper
More informationPhoto IC for optical switch
Photo IC with optical switch functions The S6841 and S8119 are specifically designed for optical switches. A transmission mode or reflection mode optical switch can be easily configured when used in combination
More informationPbSe photoconductive detectors
PbSe photoconductive detectors P9696 series P327-8 Infrared detectors with fast response and high sensitivity in 5 μm wavelength band Compared to other detectors used in the same wavelength regions, PbSe
More informationInAsSb photovoltaic detector
InAsSb photovoltaic detector P2-2 High-speed response and high sensitivity in the 5 μm spectral band Thermoelectrically cooled infrared detector with no liquid nitrogen required The P2-2 is an infrared
More informationDriver circuits for CCD image sensor
Driver circuit for CCD image sensor (S10420/S11071/S11510 series) The and are driver circuits designed for HAMAMATSU CCD image sensor S10420/S11071/S11510 series. The and can be used in spectrometer when
More informationMCT photoconductive detectors
Non-cooled type and suitable for long, continuous operation Features Choice of spectral response (up to 12 μm) The band gap can be adjusted by controlling the composition ratio of HgTe and CdTe. Utilizing
More informationInfrared detector modules with preamp
Easy-to-use detector modules with built-in preamps Infrared detector modules operate just by connecting to DC power supplies. The detector element is selectable from among InGaAs, InAs, InSb, and InAsSb
More informationMini-spectrometer. SMD series C14384MA-01. High sensitivity in the near infrared region (to 1050 nm), ultra-compact grating type spectrometer
Mini-spectrometer SMD series C14384MA-01 High sensitivity in the near infrared region (to 1050 nm), ultra-compact grating type spectrometer The C14384MA-01 is a ultra-compact grating type spectrometer
More informationPhotosensitive area (mm) 4 4. Peak sensitivity wavelength (nm) Supply voltage Dark state. Max. Vcc max. Tstg Min. Max. (ma) (V)
Integrates a PSD for precision photometry or a 4-segment Si photodiode with low-noise amp in a compact case PSD modules contain a high-precision two-dimensional PSD (position sensitive detector) or a 4-segment
More informationAPD module. Variable gain, stable detection even at high gain. C Applications. Features. Sensitivity vs.
APD module C158-1 Variable gain, stable detection even at high gain The C158-1 consists of an APD, current-to-voltage converter, high-voltage power supply circuit as well as a microcontroller for compensating
More informationHigh-speed photodiodes (S5973 series: 1 GHz)
S5973 series High-speed photodiodes (S5973 series: 1 GHz), and S5973 series are high-speed Si PIN photodiodes designed for visible to near infrared light detection. These photodiodes provide wideband characteristics
More informationSignal processing circuit for 2-D PSD
Signal processing circuit for 2-D PSD Circuit board for easier 2-D PSD operation The is a DC signal processing circuit for two-dimensional PSD. It is suitable for displacement measurements using DC light.
More informationInGaAs multichannel detector head
Near infrared line camera (Line rate: 31.25 khz) The is a multichannel detector head suitable for applications where high-speed response is required, such as SD- OCT (spectral domain-optical coherence
More informationDriver circuit for CCD linear image sensor
Driver circuit for CCD linear image sensor C11165-02 For CCD image sensor (S11155/S11156-2048-02) The C11165-02 is a driver circuit designed for Hamamatsu CCD image sensor S11155/S11156-2048-02. The C11165-02
More informationMPPC (Multi-Pixel Photon Counter) arrays
MPPC (Multi-Pixel Photon Counter) arrays MPPC arrays in a chip size package miniaturized through the adoption of TSV structure The is a MPPC array for precision measurement miniaturized by the use of TSV
More informationPhotodiode modules. C10439 series. Integrates photodiode for precision photometry with low-noise amp.
Integrates photodiode for precision photometry with low-noise amp The photodiode modules are high-precision photodetectors that integrate a photodiode and a current-to-voltage amplifier. The output from
More informationMCT photoconductive detectors
MCT photoconductive detectors P3257 series P4249-08 0 μm band infrared detector with high sensitivity and high-speed response Features High-speed response, high sensitivity in the 0 μm band detection Photoconductive
More informationSignal processing circuit for 1-D PSD
Signal processing circuit for 1-D PSD Circuit board for easier 1-D PSD operation The is a DC signal processing circuit for one-dimensional PSD. It is suitable for displacement measurements using DC light.
More informationNMOS linear image sensor
Image sensor highly sensitive to X-rays from 0 k to 00 kev s are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is made up of N-channel
More informationDriver circuit for CMOS linear image sensor
High-precision driver circuit with variable integration time function The is a driver circuit specifically designed for the Hamamatsu S10111 to S10114 series, S10121 to S10124 series (-01) current-output
More informationCMOS linear image sensor
CMOS linear image sensor S10226-10 Small, resin-sealed CMOS image sensor The S10226-10 is a resin-sealed CMOS linear image sensor to offer compact size and high cost-performance compared to our previous
More informationS P. Ultra-miniature, high performance Electromagnetically driven laser scanning MEMS mirror. Features.
Si MEMS photodiode mirror Ultra-miniature, high performance Electromagnetically driven laser scanning MEMS mirror The is an electromagnetically driven mirror that incorporates our unique MEMS (micro-electro-mechanical
More informationCMOS linear image sensors
Built-in timing generator and signal processing circuit; 5 V single supply operation The is a family of CMOS linear image sensors designed for image input applications. These linear image sensors operate
More informationDistance linear image sensor
Measures the distance to an object by TOF (time-of-flight) method The distance image sensor is designed to measure the distance to an object by TOF method. When used in combination with a pulse modulated
More informationPhoto IC for rangefinder
One channel distance measurement photo IC for indirect TOF (time-of-flight) The is a distance measurement device using the indirect TOF method. It integrates Hamamatsu s CMOS sensor and signal processing
More informationDriver circuits for photodiode array with amplifier
C98 series Compact, easytouse driver circuit The C98 series CMOS driver circuit is designed for photodiode arrays with amplifier. The C98 series operates a linear image sensor by just inputting two signals
More informationVariable gain and stable detection even at high gains
MODULE APD module C5 Variable gain and stable detection even at high gains Along with an APD, current-to-voltage conversion circuit, and high-voltage power supply circuit, the C5 contains a microcontroller
More information16-element Si photodiode arrays
S11299-321 S11299-421 S11299-21 S11299-121 Back-illuminated photodiode arrays for X-ray non-destructive inspection, slender board type The is a back-illuminated type 16-element photodiode array specifically
More informationApplications. l Image input devices l Optical sensing devices
IMAGE SENSOR CMOS linear image sensor S8377/S8378 series Built-in timing generator and signal processing circuit; single 5 V supply operation S8377/S8378 series is a family of CMOS linear image sensors
More informationCMOS linear image sensors
CMOS linear image sensors S11106-10 S11107-10 Compact size and high cost-performance The S11106-10 and S11107-10 are CMOS linear image sensors of resin sealing type that delivers a video data rate of 10
More informationDriver circuit for CCD linear image sensor
Driver circuit for CCD linear image sensor C11165-01 For CCD image sensor (S11155/S11156-2048-01) The C11165-01 is a driver circuit designed for HAMAMATSU CCD image sensor S11155/S11156-2048-01. The C11165-01
More informationCMOS linear image sensor
CMOS linear image sensor S14739-20 High sensitivity, photosensitive area with vertically long pixels The S14739-20 is a high sensitivity CMOS linear image sensor using a photosensitive area with vertically
More informationInGaAs linear image sensors
Near infrared image sensors for portable analytical instruments The compact low-cost near infrared linear image sensors are designed for portable analytical instruments. They consume less current than
More informationDriver circuit for CCD image sensor
For CCD image sensor S11850-1106, S11511 series The is a driver circuit developed for CCD image sensors S11850-1106 and S11511 series. By connecting the to a PC through the USB 2.0 interface, you can use
More informationCMOS linear image sensor
Digital output, built-in 8/10-bit A/D converter, single power supply operation The is a CMOS linear image sensor designed for image input applications. The signal processing circuit has a charge amplifier
More informationCMOS linear image sensor
CMOS linear image sensor S10227-10 Small, resin-sealed CMOS image sensor The S10227-10 is a resin-sealed CMOS linear image sensor to offer compact size and high cost-performance compared to our previous
More informationCMOS linear image sensor
High sensitivity, photosensitive area with minute pixels The is a high sensitivity CMOS linear image sensor using a photosensitive area with minute pixels. It has a long photosensitive area (effective
More informationInGaAs linear image sensors
Wide spectral response range, near infrared image sensors (0.5 to 1.7 μm) The InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. The consists of an
More informationCMOS linear image sensors
High-speed video data rate: 50 MHz The is a CMOS linear image sensor that delivers a video data rate of 50 MHz. Two package styles are provided: a DIP type and a surface mount type. Features Video data
More informationInGaAs linear image sensors
Single video line (256/512 pixels) near infrared image sensor (0.95 to 1.7 μm) The G11135 series InGaAs linear image sensors designed for foreign object inspection equipment. These linear image sensors
More informationLCOS-SLM (Liquid Crystal on Silicon - Spatial Light Modulator)
POWER LCOS-SLM CONTROLLER RESET POWER OUTPUT ERROR LCOS-SLM (Liquid Crystal on Silicon - Spatial Light Modulator) Control your light! Shape your beam! Improve your image! The devices are a reflective type
More informationMini-spectrometer. TF series. Compact and thin, built-in high-sensitivity CMOS image sensor for Raman spectroscopy C14214MA. Applications.
TF series C14214MA Compact and thin, built-in high-sensitivity CMOS for Raman spectroscopy The mini-spectrometer TF series is a polychromator provided in a compact, thin case that houses optical elements,,
More information