2N5204-2N5207 SILICON CONTROLLED RECTIFIER. High-reliability discrete products and engineering services since 1977

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1 N681N69, N504N507 Highreliability discrete products FETURES vailable as HR (high reliability) screened per MILPRF19500, JNTX level. dd HR suffix to base part number. vailable as nonrohs (Sn/Pb plating), standard, and as RoHS by adding PBF suffix. MXIMUM RTINGS Rating RMS onstate current verage onstate TC Peak one cycle 50 Hz Peak one cycle 60 Hz 50 Hz IT(RMS) IT() TC ITSM It 60 Hz Gate current to trigger Typical critical dv/dt exponential to DRM Critical rate of rise Typical junction temperature IGT dv/dt di/dt TJ N681N to N504N to to to 15 Unit s m /µs /µs OLTGE RTINGS (pplied gate voltage zero or negative) Part Number N681 N68 N683 N685 N687 N688 N689 N690 N691 N69 N504 N505 N506 N507 RRM, DRM Maximum repetitive peak reverse and offstate voltage () TJ = 65 to TJ = 40 to RSM Maximum nonrepetitive peak reverse voltage tp 5 ms () TJ = 65 to TJ = 40 to

2 N681N69, N504N507 Highreliability discrete products ELECTRICL CHRCTERISTICS (T = 5 unless otherwise specified) IT(RMS) IT() ITSM Characteristics Maximum RMS onstate current Maximum average onstate TC = Maximum peak one cycle, nonrepetitive surge current It Maximum It capability, for fusing It Maximum It capability for individual device fusing I t Maximum I t capability for individual device fusing (1) TM Maximum peak onstate voltage IH Maximum holding current N681N69 5 N504N Units to to s s s.3 5 m Conditions 180 half sine wave conduction 50 Hz half cycle sine wave or 6 ms rectangular pulse 60 Hz half cycle sine wave or 5 ms rectangular pulse 50 Hz half cycle sine wave or 6 ms rectangular pulse 60 Hz half cycle sine wave or 5 ms rectangular pulse t = 10 ms t = 8.3 ms t = 10 ms t = 8.3 ms Following any rated load condition and with rated RRM applied following surge Same conditions as above except with RRM applied following surge = 0 Rated RRM applied following surge, initial TJ = 15 RRM = 0 following surge, initial TJ = 15 t = 0.1 to 10ms initial TJ 15, RRM following surge = 0 TJ = 5, IT() = 16(50 peak) N681 IT() = (70) peak N504 node supply = 4, initial IT= 1.0 BLOCKING typical dv/dt Minimum critical rate of rise of offstate voltage 50 typical 50 /µs TJ = 15 exponential to % rated DRM TJ = 15 exponential to 67% rated DRM

3 N681N69, N504N507 Highreliability discrete products IR() & ID() Characteristics Maximum reverse and offstate current RRM & DRM = N681N69 IR() & ID() (average values) N504N507 IRM & IDM (peak values) Units m Conditions TJ = 15, gate open circuited 5 to & µs TC = 5, DM = rated DRM, ITM = 10 dc resistive circuit. Gate pulse: 10, 40Ω source, tp = 6µs, tr = 0.1µs /µs TC = 15, DM = rated DRM, ITM = x di/dt, gate pulse: 0, 15 Ω, tp = 6µs, tr = 0.1 µs maximum SWITCHING td Typical delay time di/dt Maximum nonrepetitive rate of rise of turnedon current DM = 5 to 600 DM = 700 to W TC = 15, DM = 600, ITM = 400Hz max. Gate pulse: 0, 15Ω, tp = 6µs, tr = 0.1µs max. TRIGGERING PGM Maximum peak gate power PG() Maximum average gate power W IGM Maximum peak positive gate current +GM Maximum peak positive gate voltage 10 GM Maximum peak negative gate voltage 5 5 IGT Maximum required DC gate current to trigger Typical DC gate current to trigger m tp 5ms N681 tp 500µs N504 TC = min rated value. Max. required gate trigger current is the lowest value which will trigger all units with 6 anode to cathode TC = TC = TC = 5, 6 anode to cathode

4 N681N69, N504N507 Highreliability discrete products Characteristics Maximum required DC gate voltage to trigger GT GD N681N69 N504N507 Units 3 3 Conditions TC = 65. Max. required gate trigger voltage is the lowest value which will trigger all units with 6 anode to cathode TC = 5 Typical DC gate voltage to trigger TC = 5 6 anode to cathode Maximum DC gate voltage not to trigger TC = 15. Max. gate voltage not to trigger is the maximum value which will not trigger any unit with rated DRM anode to cathode Note 1: It for time tx I t tx THERML MECHNICL CHRCTERISTICS N681N69 N504N507 Units TJ Operating junction temperature range 65 to to 15 Tstg Storage temperature range 65 to to 15 RthJC Maximum internal thermal resistance, junction to case /W DC operation RthCS Thermal resistance, case to sink /W Mounting surface smooth, flat and greased Characteristics Conditions

5 Highreliability discrete products N681N69, N504N507 MECHNICL CHRCTERISTICS Case Marking Pin out TO48 lphanumeric See below

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