Symbol Parameter Value Unit V CES Collector-Emitter Voltage (V BE = 0) 700 V V CEO Collector-Emitter Voltage (I B = 0) 400 V Emitter-Base Voltage
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1 STD3003 HIGH OLTAGE FAST-SWITCHING NPN POWER TRANSISTOR REERSE PINS OUT s STANDARD IPAK (TO-25) / DPAK (TO-252) PACKAGES MEDIUM OLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION ERY HIGH SWITCHING SPEED SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (Suffix "T4") THROUGH-HOLE IPAK (TO-25) POWER PACKAGE IN TUBE (Suffix "-") APPLICATIONS: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING SWITCH MODE POWER SUPPLIES IPAK TO-25 (Suffix "-") DPAK TO-252 (Suffix "T4") DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter alue Unit CES Collector-Emitter oltage ( BE = 0) 700 CEO Collector-Emitter oltage (I B = 0) 400 Emitter-Base oltage (IC = 0, IB = 0.75 A, tp < 0µs, Tj < 50 o C) I C Collector Current.5 A EBO B EBO I CM Collector Peak Current (t p < 5 ms) 3 A IB Base Current 0.75 A I BM Base Peak Current (t p < 5 ms).5 A P tot Total Dissipation at T c = 25 o C 20 W T stg Storage Temperature -65 to 50 Tj Max. Operating Junction Temperature 50 o C o C September 200 /8
2 THERMAL DATA R thj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o C/W o C/W ELECTRICAL CHARACTERISTICS (T case = 25 o C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICE BEBO CEO(sus) CE(sat) BE(sat) Collector Cut-off Current ( BE = -.5) Emitter-Base Breakdown oltage (I C = 0) Collector-Emitter Sustaining oltage (I B = 0) Collector-Emitter Saturation oltage Base-Emitter Saturation oltage CE = 700 CE = 700 T j = 25 o C IE = 0 ma 9 8 I C = 0 ma L = 25 mh I C = 0.5 A I C = A I C =.5 A I C = 0.5 A IC = A I B = 0. A I B = 0.25 A I B = 0.5 A I B = 0. A IB = 0.25 A h FE DC Current Gain I C = 0.5 A CE = 2 Group A Group B I C = A CE = 2 t r ts t f ts RESISTIE LOAD Rise Time Storage Time Fall Time INDUCTIE LOAD Storage Time I C = A IB = 0.2 A Tp= 25 µs I C = A BE = -5 clamp = 300 CC = 25 IB2 = -0.2 A I B = 0.2 A L = 50 mh 5 ma ma µs µs µs 0.8 µs Pulsed: Pulse duration = 300µs, duty cycle =.5 % Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details. 2/8
3 Safe Operating Areas Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation oltage Base Emitter Saturation oltage 3/8
4 Inductive Fall Time Inductive Storage Time Reverse Biased SOA 4/8
5 Figure : Inductive Load Switching Test Circuit. ) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. ) Fast electronic switch 2) Non-inductive Resistor 5/8
6 TO-25 (IPAK) MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A A A B B B B B C C D E G H L L L o 0 o P032N_E 6/8
7 TO-252 (DPAK) MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A A A B B C C D E G H L L o 8 o 0 o 0 o P032P_B 7/8
8 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 200 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 8/8
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