Photosensor with front-end IC

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Compact APD suitable for various light level detection The is a compact optical device that integrates a Si APD and preamp. It has a built-in DC feedback circuit for reducing the effects of background light. It also provides excellent noise and frequency characteristics. We provide an evaluation kit for this product. Contact us for detailed information. Features High-speed response: 180 MHz Two-level gain switch function (low gain: single output, high gain: defferential output) Reduced background light effects Small waveform distortion when excessive light is incident Applications Distance measurement Option Driver circuit C13283-03 Structure Parameter Symbol Specification Unit Detector - Si APD - Photosensitive area size* 1 A ϕ0.2 mm Package - Plastic - *1: Photosensitive area in which a typical gain can be obtained Absolute maximum ratings Parameter Symbol Condition Value Unit Supply voltage (for preamp) Vcc max 4.5 V Reverse voltage (for APD) V_APD 0 to VBR V Reverse current (DC) IR max 0.2 ma Forward current IF max 10 ma terminal voltage - Vcc + 0.7 V terminal voltage - Vcc + 0.7 V Operating temperature Topr No dew condensation* 2-30 to +85 C Storage temperature Tstg No dew condensation* 2-30 to +85 C Soldering conditions* 3 - Peak temperature 240 C, 1 time (see P.5) - *2: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. *3: JEDEC level 5a Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. www.hamamatsu.com 1

Electrical and optical characteristics (Ta=25 C) Parameter Symbol Condition Min. Typ. Max. Unit Spectral response range λ 400 to 1150 nm Peak sensitivity wavelength λp M=100-840 - nm Photosensitivity S λ=λp, M=100, low gain 0.1 0.2 0.4 λ=λp, M=100, high gain 2 4 8 MV/W Quantum efficiency QE λ=900 nm, M=1-70 - % Breakdown voltage VBR ID=100 µa 120 160 200 V Temperature coefficient of breakdown voltage ΔTVBR - 1.1 - V/ C Dark current ID M=100 10 100 1000 pa Temperature coefficient of dark current ΔTID M=100-1.1 - times/ C Current consumption Ic Low gain 17 25 32 High gain 20 28 35 ma Low cutoff frequency fcl Low gain - 0.01 - High gain - 0.5 - MHz High cutoff frequency fch Low gain 120 180 240 High gain 100 160 220 MHz Input conversion noise f=10 MHz, M=100-50 100 en power f=100 MHz, M=100-65 130 fw/hz 1/2 Output voltage level - Low gain 0.9 1.2 High gain 0.7 1 1.3 V Output offset voltage Voffset High gain - - ±100 mv Maximum output voltage Vp-p max Low gain - -0.5 - amplitude High gain - ±0.7 - V Supply voltage Vcc1, Vcc2 3.135 3.3 3.465 V Spectral response Quantum efficiency vs. wavelength 60 (Typ. Ta=25 C, M=100) 100 (Typ. Ta=25 C) 90 50 80 Photosensitivity (A/W) 40 30 20 Quantum efficiency (%) 70 60 50 40 30 10 20 10 0 400 600 800 1000 1200 0 400 600 800 1000 1200 Wavelength (nm) Wavelength (nm) KPICB0187EB KPICB0188EA 2

Dark current vs. reverse voltage vs. reverse voltage 100 μa (Typ. Ta=25 C) 10000 (Typ. λ=900 nm) 10 μa 1 μa 1000-10 C 0 C 20 C 40 C 60 C Dark current 100 na 10 na 1 na 100 100 pa 10 10 pa 1 pa 0 20 40 60 80 100 120 140 160 180 200 1 100 120 140 160 180 200 220 Reverse voltage (V) Reverse voltage (V) KPICB0189EB KPICB0191EA Frequency characteristics (typical example) 5 (Ta=25 C) 0 Low Relative gain (db) -5-10 -15 High -20-25 0.1 1 10 100 1000 Frequency (MHz) KPICB0192EB 3

Directivity 30 40 50 60 70 20 (Typ. light source: tungsten lamp) 10 0 10 20 30 40 50 60 70 80 80 90 90 100 80 60 40 20 0 20 40 60 80 100 Relative sensitivity (%) KPICB0193EA Truth table selection selection 0 Low gain ( 1) 1 High gain ( 20) _dis selection _dis selection Background light elimination function 0 ON 1 OFF Block diagram V_APD Vcc1 Vcc2 APD Rf SW1 TIA VGA SW2 SW3 Out1 Out2 GND The (DC feedback) circuit detects the DC component of photocurrent, and reduces the effects of background light through the differential processor. KPICC0285ED 4

Measured example of temperature profile with our hot-air reflow oven for product testing 300 C 240 C max. 220 C Temperature 190 C 170 C Preheat 70 to 90 s Soldering 40 s max. Time KPICB0171EA This product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 C or less and a humidity of 60% or less, and perform soldering within 24 hours. The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used. Before actual reflow soldering, check for any problems by testing out the reflow soldering methods in advance. Dimensional outline (unit: mm) Recommended land pattern (unit: mm) Photosensitive area ɸ0.2 3.9 0.2 2.6 1.0 1.60 0.8 5.5 0.3 4.8 1.1 0.4 1.1 5.1 KPICC0286EC 2.7 Tolerance unless otherwise noted: ±0.1 0.3 (6 ) P0.8=4.8 0 Pin no. Function Pin no. Function NC Out2 NC GND GND GND Vcc2 Vcc1 GND NC Out1 V_APD KPICA0100EE 5

Connection example V_APD Vcc1 Vcc2 1 kω L L 0.047 µf/ 630 V 10 µf 0.1 µf 10 µf 0.1 µf L BLM18PG221SN1 APD Rf TIA VGA Out1 Out2 200 Ω 200 Ω GND KPICC0298EA Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions Disclaimer Metal, ceramic, plastic packages Surface mount type products Evaluation kit for photosensor with front-end IC () An evaluation kit [48 mm (H) 50 mm (V)] for understanding the operating principle of Hamamatsu s photosensor with front-end IC is available. Contact us for detailed information. 6

Information described in this material is current as of November 2018. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218, E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8, E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10, E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777, E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46)8-509 031 00, Fax: (46)8-509 031 01, E-mail: info@hamamatsu.se Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39)02-93 58 17 33, Fax: (39)02-93 58 17 41, E-mail: info@hamamatsu.it China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866, E-mail: hpc@hamamatsu.com.cn Taiwan: Hamamatsu Photonics Taiwan Co., Ltd.: 8F-3, No. 158, Section2, Gongdao 5th Road, East District, Hsinchu, 300, Taiwan R.O.C. Telephone: (886)03-659-0080, Fax: (886)03-659-0081, E-mail: info@hamamatsu.com.tw Cat. No. KPIC1096E09 Nov. 2018 DN 7