Effective photosensitive* 2 area size. Storage temperature Tstg (mm) ( C) ( C) S φ0.2 φ0.5 S φ to to +100 S9075

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/-05/-10, S5344, S5345 Short wavelength type APD, for 600 nm band These are short wavelength APDs with improved sensitivity in the UV to visible range. They offer high gain, high sensitivity, and low noise in the short wavelength range. They are suitable for applications such as low-light-level measurement and analytical instrument. Features High sensitivity and low noise in UV to visible range Applications Low-light-level measurement Analytical instrument Structure / Absolute maximum ratings Type no. Dimensional outline/ material* 1 Package Effective photosensitive* 2 area size Absolute maximum ratings Operating temperature Topr Storage temperature Tstg (mm) ( C) ( C) φ0.2 S12053-05 (1)/U TO-18 φ0.5 S12053-10 φ1.0-20 to +60-55 to +100 φ1.5 (2)/U TO-5 S5344 φ3.0 S5345 (3)/U TO-8 φ5.0 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. *1: U=UV glass *2: Area in which a typical gain can be obtained Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted) Type no. Spectral response range λ Peak* 3 sensitivity wavelength λp Photosensitivity S M=1 λ=620 nm Quantum efficiency QE M=1 λ=620 nm Breakdown voltage VBR ID=100 μa Temp. coefficient of VBR Dark* 3 current ID Cutoff* 3 frequency fc RL=50 Ω Terminal* 3 capacitance Ct Typ. Max. Typ. Max. (nm) (nm) (A/W) (%) (V) (V) (V/ C) (na) (na) (MHz) (pf) 900 2 S12053-05 0.2 5 400 5 S12053-10 250 15 200 to 1000 620 0.42 80 150 200 0.14 0.5 15 100 30 S5344 1 30 25 120 S5345 3 100 8 320 *3: Values measured at a gain listed in the characteristics table Excess* 3 noise figure x M 0.28 50 www.hamamatsu.com 1

Spectral response Quantum efficiency vs. wavelength 30 (Typ. Ta=25 C, M at 650 nm) 100 (Typ. Ta=25 C) M=50 80 Photosensitivity (A/W) 20 10 M=20 M=10 Quantum efficiency (%) 60 40 20 0 200 400 600 800 1000 0 200 400 600 800 1000 Wavelength (nm) Wavelength (nm) KAPDB0010ED KAPDB0023EB Dark current vs. reverse voltage vs. reverse voltage 10 na (Typ. Ta=25 C) 10 3 (Typ. ) 1 na S5345-20 C Dark current 100 pa 10 pa S5344 S12053-10 S12053-05 10 2 10 1 20 C 0 C 60 C 40 C 1 pa 0 20 40 60 80 100 120 140 160 10 0 130 140 150 160 KAPDB0009EE KAPDB0011EC 2

Terminal capacitance vs. reverse voltage Excess noise factor vs. gain 1 nf S5345 (Typ. Ta=25 C, f=1 MHz) S5344 10 (Typ. Ta=25 C, f=10 khz, B=1 Hz) λ=800 nm Terminal capacitance 100 pf 10 pf S12053-10 Excess noise factor M 0.3 M 0.5 S12053-05 M 0.2 1 pf 0 20 40 60 80 100 120 140 160 1 1 10 100 KAPDB0015ED KAPDB0013EA Dimensional outlines (unit: mm) (1) /-05/-10 (2), S5344 5.4 ± 0.1 9.1 ± 0.2 4.7 ± 0.1 3.0 ± 0.2 2.8 ± 0.2 3.6 ± 0.2 (13.5) 8.1 ± 0.1 5.9 ± 0.1 2.6 ± 0.2 0.4 max. (20) 4.2 ± 0.2 2.54 ± 0.2 5.08 ± 0.2 1.5. max. -0.2 X +0.2-0.2 Y +0.2 a maximum of 0.1 mm above KAPDA0014EB -0.3 X +0.3-0.3 Y +0.3 a maximum of 0.2 mm above KAPDA0015EB 3

(3) S5345 13.9 ± 0.2 12.35 ± 0.1 10.5 ± 0.1 2.9 ± 0.2 0.5 max. (15) 4.9 7.5 ± 0.2 Index mark 1.4 1.0 max. -0.4 X +0.4-0.4 Y +0.4 a maximum of 0.2 mm above KAPDA0016EC Precautions Long-term exposure to UV will cause produt characteristics deteriorate. Avoid exposing the products to any unnecessary UV irradiation. Related information http://www.hamamatsu.com/sp/ssd/doc_en.html Precautions Notice Metal, ceramic, plastic package products / Precautions Technical information Si APD / Technical information 4

Information described in this material is current as of October, 2013. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KAPD1001E06 Oct. 2013 DN 5