PHOTODIODE Si photodiode with preamp S5590, S559 Photodiode and preamp integrated with feedback resistance and capacitance S5590, S559 are lownoise light sensors consisting of a large area Si photodiode, op amp, and feedback resistance and capacitance, all integrated into a small package. By simply connecting to a power supply, S5590 and S559 can be used in lowlightlevel measurement such as spectrophotometry. Features l Si photodiode for UV to near IR precision photometry l Small package with quartz window S5590: TO5 S559: TO8 l FET input operational amplifier with low power dissipation l Builtin Rf= GΩ and Cf=5 pf l Variable gain with an externally connected resistor l Low noise and NEP l Guard ring structure for low level signal Applications l Spectrophotometry l Generalpurpose optical measurement General ratings / Absolute maximum ratings Type No. Dimensional outline/ Window material * Active area size Package Number of terminals S5590 ➀/Q 2.4 2.4 TO5 0 S559 ➁/Q 5.8 5.8 TO8 2 Supply (op amp) Vcc Reverse (photodiode) VR Absolute maximum ratings Power dissipation P Operating temperature Topr Storage temperature Tstg (mm) (V) (V) (mw) ( C) ( C) ±8 5 500 20 to 60 30 to 80 Electrical and optical characteristics (Typ. Ta=25 C, Vcc=±5 V, RL= MΩ, unless otherwise noted) Output Noise Spectral Peak Feedback Feedback Output Photo noise equivalent response sensitivity resistance capacitance offset sensitivity power range wavelength Rf Cf S Vn NEP Type No. Vos λ λp (builtin) (builtin) (V/nW) Dark state λ=λp f=0 Hz (fw/hz /2 Dark state ) λ=200 λ=λp (nm) (nm) (GΩ) (pf) nm (µvrms/hz /2 f=0 Hz f=20 Hz ) S5590 90 to 7 5 5 960 5 0.2 0.52 S559 00 8 6 7 * Window material Q: quartz glass Cutoff frequency fc Supply current Is Dark state (mv) (MHz) (ma) ±2 32 0.6
Figure Spectral response PHOTO SENSITIVITY (V/nW) [Ta=25 C, Rf= GΩ (builtin), Cf=5 pf (builtin)] 0.6 0.5 0.4 0.3 0.2 0. Figure 2 Frequency response CURRENTTOVOLTAGE CONVERSION GAIN (MΩ) [Typ. Ta=25 C, Vcc=±5 V, Cf=5 pf (builtin), RL= MΩ] S5590, S559 0 0 0 90 400 600 800 000 200 WAVELENGTH (nm) KSPDB0093EA KSPDB0045EC The builtin feedback resistance and capacitance of S5590 and S559 are GΩ and 5 pf, respectively. This combination provides a sensitivity of about 0. to 0.5 V/nW in the wavelength range of 90 to 00 nm. Figure 3 Output noise vs. frequency (S5590) The currentto conversion gain can be varied by connecting an external feedback resistor between pins 4 and 6 for S5590, and between pins 9 and 2 for S559. Figure 2 shows the frequency response characteristics of S5590 and S559 with or without an externally connected feedback resistor. Because S5590 and S559 have a builtin resistor of GΩ, for example the total feedback resistance will be converted to 00 MΩ by externally connecting a resistor of MΩ. Choose the desired constant according to the incident light level to be detected. Note) If the external feedback resistor is MΩ or less, gain peaking may occur in the frequency response. Therefore, be sure to connect a matched feedback capacitor for phase compensation. Figure 4 Output noise vs. frequency (S559) OUTPUT NOISE VOLTAGE (µvrms/hz /2 ) 00 0 0. [Typ. Ta=25 C, Vcc=±5 V, Cf=5 pf (builtin), RL= MΩ, dark state] S5590 OUTPUT NOISE VOLTAGE (µvrms/hz /2 ) [Typ. Ta=25 C, Vcc=±5 V, Cf=5 pf (builtin), RL= MΩ, dark state] 00 0 0. S559 0.0 0.0 KSPDB0066EA Output noise and NEP (noise equivalent power) characteristics allow you to check whether the device can detect the lowlevel light you want to measure. Since NEP is given by the equation () as shown at the right, NEP at wavelengths other than λp can be easily calculated from Figure and Figures 5 to 6. Note) When S5590 and S559 are used only with the internal currentto gain, it is recommended that the "IN" lead (pin 6 for S5590; pin 9 for S559) be cut off to a short length in order to reduce the influence of external noise as much as possible. KSPDB0046EA Vn (f) NEP(f, λp) S (λp) NEP (f, λ) = = () GI V (f) Ssi (λ) S (λ) NEP (f, λ) : NEP at frequency and wavelength to be detected NEP (f, λp): NEP at peak wavelength (See Figures 5 and 6.) GIV(f) : Currentto conversion gain (See Figure 2.) Ssi (λ) : Sensitivity of Si photodiode S (λ) : Sensitivity of S5590 and S559 (See Figure.) S (λp) : Sensitivity of S5590 and S559 at peak wavelength, 0.5 V/nW Vn (f) : Output noise (See Figure 3 and 4.) 2
Figure 5 NEP vs. frequency (S5590) Figure 6 NEP vs. frequency (S559) 0 5 [Typ. Ta=25 C, Vcc=±5 V, Cf=5 pf (builtin), RL= MΩ, dark state, λ=λp] 0 5 [Typ. Ta=25 C, Vcc=±5 V, Cf=5 pf (builtin), RL= MΩ, dark state, λ=λp] NEP (fwrms/hz /2 ) S5590 NEP (fwrms/hz /2 ) S559 KSPDB0067EA KSPDB0047EA 3
Figure 7 External connection example (S5590) Rf TO5 PACKAGE 0.µF Rf= GΩ (BUILTIN) Cf=5 pf (BUILTIN) VOLTAGE NULLING Vcc Vcc 0 kω (QUARTS) PHOTO DIODE RL RL is the input impedance to the nextstage circuit when viewed from the OUT terminal. 0. µf KSPDC0029EA Figure 8 External connection example (S559) Rf TO8 PACKAGE 0. µf Rf= GΩ (BUILTIN) Cf=5 pf (BUILTIN) VOLTAGE NULLING Vcc 0 kω (QUARTS) PHOTO DIODE RL RL is the input impedance to the nextstage circuit when viewed from the OUT terminal. 0. µf KSPDC005EB S5590 and S559 use a package with the guard ring effect provided. To make it effective during measurement, the package leads (pin 5 for S5590; pins 5 and for S559) should be connected to the ground line. When a feedback resistor is externally connected, it is necessary to provide a guard ring on the circuit board or to provide a teflon standoff for the leads. The output offset should be adjusted using a 0 kω variable resistor under completely lightshielded conditions. Note) A tantalum or ceramic capacitor of 0. to 0 µf must be connected to the supply leads (pins 3 and 9 for S5590; pins and 4 for S559) as a bypass capacitor used to prevent the device from oscillation. 4
Figure 9 Dimensional outlines (unit: mm) ➀ S5590 ➁ S559 9.5 ± 0.2 3.0 ± 0. 8.2 ± 0. 6.4 ± 0.2 5.2 ± 0.3 4.0 ± 0.2 0.0 ± 0.2 5. ± 0.2 PHOTOSENSITIVE SURFACE 0.45 LEAD.2 MAX. 0.5 MAX. 4.7 (20) 5.84 ± 0.2 OUT IN IN PD (CATHODE) PHOTOSENSITIVE SURFACE 0.45 LEAD 3.45 5.08 ± 0.2 (3.5) 0.6 ± 0.2 IN IN PD (CATHODE) OUT 0.6 ± 0.2 5.08 ± 0.2 KSPDA0067EB KSPDA0068EB Precautions for Use S5590 and S559 may be damaged or their performance may deteriorate by such factors as electro static discharge from the human body, surge s from measurement equipment, leakage s from soldering irons and packing materials. As a countermeasure against electro static discharge, the device, operator, work place and measuring jigs must all be set at the same potential. The following precautions must be observed during use: To protect the device from electro static discharge which accumulate on the operator or the operator's clothes, use a wrist strap or similar tools to ground the operator's body via a high impedance resistor ( MΩ). A semiconductive sheet ( MΩ to 00 MΩ) should be laid on both the work table and the floor in the work area. When soldering, use an electrically grounded soldering iron with an isolation resistance of more than 0 MΩ. For containers and packing, use of a conductive material or aluminum foil is effective. When using an antistatic material, use one with a resistance of 0. MΩ/cm 2 to GΩ/cm 2. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 200 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 26 Ichinocho, Hamamatsu City, 4358558 Japan, Telephone: (8) 05343433, Fax: (8) 053434584, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 690, Bridgewater, N.J. 08807090, U.S.A., Telephone: () 908230960, Fax: () 9082328 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 0, D822 Herrsching am Ammersee, Germany, Telephone: (49) 08523750, Fax: (49) 08522658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 9882 Massy Cedex, France, Telephone: 33() 69 53 7 00, Fax: 33() 69 53 7 0 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 0 Tewin Road, Welwyn Garden City, Hertfordshire AL7 BW, United Kingdom, Telephone: (44) 707294888, Fax: (44) 707325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 2, SE7 4 Solna, Sweden, Telephone: (46) 85090300, Fax: (46) 8509030 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, /E, 20020 Arese, (Milano), Italy, Telephone: (39) 029358733, Fax: (39) 02935874 Cat. No. KSPD028E02 Jul. 200 DN 5