NMOS multichannel detector head

Similar documents
Driver circuit for InGaAs linear image sensor

Photon counting module

Driver circuit for CMOS linear image sensor

InGaAs multichannel detector head

InGaAs multichannel detector head

Photosensitive area (mm) 4 4. Peak sensitivity wavelength (nm) Supply voltage Dark state. Max. Vcc max. Tstg Min. Max. (ma) (V)

Driver circuit for CCD linear image sensor

Driver circuit for MPPC

APD modules. Operates an APD with single 5 V supply (standard type, short-wavelength type) C12702 series.

InAsSb photovoltaic detector

APD modules. APD module integrated with peripheral circuits. C12703 series. Selection guide. Block diagram

Peak sensitivity wavelength λp (nm) Photosensitive area (mm)

NMOS linear image sensor

Driver circuit for CMOS linear image sensor

Driver circuits for CCD image sensor

Peak emission wavelength: 4.3 μm

Optics modules. Absorbance measurement module with built-in photodiode array, optical elements, current-tovoltage. C13398 series.

Infrared detector modules with preamp

Si PIN photodiodes. High-speed detectors with plastic package. Structure. Absolute maximum ratings

PbSe photoconductive detectors

MPPC modules. MPPC array modules for very-low-level light detection, 16 ch analog output. C13368/C13369 series (Analog output type)

Si PIN photodiodes. High-speed detectors with plastic package. Structure. Absolute maximum ratings

Effective photosensitive* 2 area size. Storage temperature Tstg (mm) ( C) ( C) S φ0.2 φ0.5 S φ to to +100 S9075

Driver circuit for CCD linear image sensor

Driver circuit for CCD linear image sensor

Signal processing circuit for 1-D PSD

Designed for back-thinned CCD area image sensor

Signal processing circuit for 1-D PSD

RGB color sensor. Effective photosensitive area. Green, Red: 2.25 Blue : 4.5

Driver circuits for photodiode array with amplifier

MCT photoconductive detectors

These Si photodiodes have sensitivity in the UV to near IR range. They are suitable for low-light-level detection in analysis and the like.

Effective photosensitive area. Photosensitive area size

Effective photosensitive area (mm) Photosensitive area size

Signal processing circuit for 2-D PSD

Peak emission wavelength: 3.9 μm

Driver circuit for CCD image sensor

Signal processing circuit for 2-D PSD

Suppressed IR sensitivity

Driver circuit for InGaAs linear image sensor

Power supply for MPPC

Short wavelength type APD. Effective photosensitive area (mm) Effective photosensitive area size* 2

Photosensitive area size (mm) Reverse voltage VR max (V) R to +60

Applications. Photosensitive area size. Storage temperature Tstg (mm) (mm 2 ) (V) ( C) ( C) S

CCD multichannel detector heads

MCT photoconductive detectors

InAsSb photovoltaic detector

CCD multichannel detector heads

Low bias operation, for 800 nm band

Si photodiode. Applicable to lead-free solder reflow and wide temperature range. S9674. Absolute maximum ratings

Reverse voltage VR max. Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted) Short. Temp. S coefficient (A/W) of

M=100, RL=50 Ω λ=800 nm, -3 db

1-D PSD with small plastic package

Parameter Specification Unit Photosensitive area mm Package Glass epoxy - Seal material Epoxy resin -

Between elements measure. Photosensitive area (per 1 element)

Parameter Specification Unit Photosensitive area mm Package Glass epoxy - Seal material Silicone resin -

Near infrared image sensor (0.9 to 1.7 µm) with high-speed data rate

Application OCT. Dimensions (mm) Weight (g) Operating temperature* 1 Storage temperature* 1 λ=1.55 μm (V) (mw)

Applications. l Image input devices l Optical sensing devices

CMOS linear image sensors

High-speed photodiodes (S5973 series: 1 GHz)

Power supply for MPPC

Non-discrete position sensors utilizing photodiode surface resistance

MPPC (multi-pixel photon counter)

InAsSb photovoltaic detectors

Accessories for infrared detector

APD module. Variable gain, stable detection even at high gain. C Applications. Features. Sensitivity vs.

Photo IC diode. Plastic package shaped the same as metal package. S SB. Absolute maximum ratings (Ta=25 C)

16-element Si photodiode arrays

Parameter Symbol Specification Unit Photosensitive area - ɸ0.8 mm Package mm

Photo IC diode. Wide operating temperature: -40 to +105 C. S MT. Absolute maximum ratings (Ta=25 C)

MPPC (Multi-Pixel Photon Counter)

Variable gain and stable detection even at high gains

Effective photosensitive area (mm)

InAsSb photovoltaic detectors

LCOS-SLM (Liquid Crystal on Silicon - Spatial Light Modulator)

Photo IC diode. COB (chip on board) type, small package. S CT. Absolute maximum ratings

InGaAs PIN photodiode arrays

16-element Si photodiode arrays

Mini-spectrometer. SMD series C14384MA-01. High sensitivity in the near infrared region (to 1050 nm), ultra-compact grating type spectrometer

CMOS linear image sensor

Photodiode modules. C10439 series. Integrates photodiode for precision photometry with low-noise amp.

Artisan Technology Group is your source for quality new and certified-used/pre-owned equipment

Photosensor with front-end IC

InGaAs linear image sensors

CMOS linear image sensor

16-element Si photodiode arrays

CMOS linear image sensor

16-element Si photodiode arrays

CMOS linear image sensor

Photo IC diode. Plastic package shaped the same as metal package. S SB. Features. Applications

MPPC modules. Photon counting module with built-in MPPC. C series C10751 series. Selection guide

12-bit digital output

CMOS linear image sensors

S P. Ultra-miniature, high performance Electromagnetically driven laser scanning MEMS mirror. Features.

Mini-spectrometers. TG series. High sensitivity type (integrated with backthinned type CCD image sensor) Optical characteristics

MPPC (Multi-Pixel Photon Counter) arrays

CMOS linear image sensor

InGaAs linear image sensors

FT series. Spectral response range 790 to 920 nm Spectral resolution Typ. 0.4 nm

Transcription:

UV to near infrared range (200 to 1000 nm), For multichannel spectrophotometry The is a family of multichannel detectors developed for spectrophotometry in the UV to near infrared range (up to 1000 nm). The device incorporates a thermoelectrically-cooled NMOS linear image sensor (S5930/S5931/ S8382/S8383 series), low noise driver/amplifier circuit and highly stable temperature control circuit. It also operates from simple external signal inputs. The image sensor is cooled to a preset temperature (Ts=0 C) as soon as the power is turned on. Should the cooler fail and the device overheat, the built-in protection circuit automatically shut off the power. The housing is designed for compactness, yet offers good heart dissipation. Furthermore, mounting holes are provided on the front panel of the housing, permitting easy connection to a monochromator or other instruments Features Designed for use with a thermoelectrically-cooled NMOS linear image sensors (S5930 series, etc.) Built-in driver/amplifier and temperature control circuits Highly stable temperature control ensures a constant cooling temperature of Ts=0 ± 0.05 C (at Ta=10 to 30 C) Operates from simple signal inputs High sensitivity and wide dynamic range Applications Multichannel spectrophotometry Spectrophotometer, colorimeter Optical spectrum analyzer Time-resolved photometry Selection guide The consists of the following models depending on the NMOS linear image sensor used. NMOS NMOS linear image sensor multichannel Pixel size Effective active area Type No. Number of pixels detector head [μm (H) μm (V)] [mm (H) mm (V)] C5964-0800 S5930-256S 256 12.8 2.5 50 2500 C5964-0900 S5930-512S 512 25.6 2.5 C5964-0910 S5931-512S 512 12.8 2.5 25 2500 C5964-1010 S5931-1024S 1024 25.6 2.5 C5964-0901 S8382-512S 512 50 2500 25.6 2.5 C5964-1011 S8383-1024S 1024 25 2500 25.6 2.5 Remark Standard type IR-enhanced type www.hamamatsu.com 1

Connection example Shutter * timing pulse AC cable (100 to 240 V; included with the C7557-01) Trig. Dedicated cable (Included with the C7557-01) POWER SIGNAL I/O TE CONTROL I/O USB cable (Included with the C7557-01) Controller for multichannel detector head C7557-01 PC (Windows 2000/XP/Vista) (USB 2.0) * Shutter, etc. are not available. KACCC0070ED Precaution for use When operating the with the C7557-01, always be sure to attach the MOS adapter (supplied) to the C7557-01 main unit. If the the is connected and the power is turned on without attaching the adapter, the power supply in the C7557-01 main unit may be damaged. Absolute maximum ratings Parameter Symbol Value Unit Supply voltage (for digital circuitry) +VD -0.5 to +7 V Supply voltage (for analog circuitry) ±VA ±18 V Digital input voltage - VD V Operating temperature Topr +10 to +30 C Storage temperature Tstg 0 to +50 C Electrical characteristics (Ta=25 C, VD=+5 V, ±VA=±15 V, unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Digital input High level VIH +2.0 - +VD V Low level VIL -0.5 - +0.8 V Master clock (CLK) pulse frequency fclk - - 375 khz Video signal readout frequency fv - - fclk/6 Hz Master start () pulse width tst 1/fCLK - - s Digital output High level (Io=-6 ma) VIH +2.0 - - V Low level (Io=+6 ma) VIL - - +0.8 V Digital +VD +4.75 +5.0 +5.25 V Rated voltage Analog ±VA ±14.5 ±15.0 ±15.5 V Power supply +5 Vdc * conditions - - - +2.0 A Current consumption dc - - - +100 ma -15 Vdc - - - -100 ma *1: Including the current consumption of the Peltier element incorporated in the NMOS linear image sensors (S5930 series, etc.) 2

Electrical and optical characteristics (Ta=25 C, Ts=0 C, VD=+5 V, ±VA=±15 V, unless otherwise noted) Parameter Built in sensor Symbol Min. Typ. Max. Unit Spectral response range λ - 200 to 1000 - nm Peak sensitivity wavelength S5930/S5931 series - 600 - λp S8382/S8383 series - 750 - nm S5930 series - 50 - Saturation output charge S5931 series - 25 - Qsat S8382 series - 50 - pc S8383 series - 25 - S5930 series - 0.009 0.03 Dark current S5931 series - 0.004 0.01 ID S8382 series - 0.009 0.03 pa/pixel S8383 series - 0.004 0.01 Photo response non-uniformity * 2 PRNU - - ±3 % S5930 series - 0.2 - Conversion gain S5931 series - 0.4 - Gc S8382 series - 0.2 - V/pC S8383 series - 0.4 - *2: Use for A light source. 50 % of saturation, excluding first and last pixels. Temperature controller specifications (Ta=25 C, VD=+5 V, ±VA=±15 V, unless otherwise noted) Parameter *3 Symbol Min. Typ. Max. Unit Cooling temperature Ts -1 0 +1 C Temperature control range Ts -0.05 - +0.05 C Power dissipation of Peltier element Pp - - 7 W Cool down time to preset temperature to - - 5 min Setting temperature for overheart protection To +40 - - C *3: Other functions include error display, automatic power off, and detection of electrical opens and shorts by the thermosensor. Spectral response (Measurement example) 0.5 (Ta=25 C) 0.4 IR-enhanced types Photo sensitivity (A/W) 0.3 0.2 0.1 Standard types 0 200 300 400 500 600 700 800 900 1000 1100 1200 Wavelength (nm) KMPDB0159EA 3

Equivalent circuit (NMOS linear image sensor S5930/S5931/S8382/S8383 series) Clock Clock ϕst ϕ1 ϕ2 Active photodiode Digital shift register (MOS shift register) End of scan Active video Vss Saturation control gate Saturation control drain Dummy video Dummy diodes KMPDC0020EA Block diagram () Themoelectric cooler P+ P- TH.C * 1 Temperature contoroller TH.H * 2 +5 V, VDD(D) -15 V LED +5 V D.GND A. GND -15 V CLK1 CLK2 +5 V Buffer Timing signal Controller CLK Trigger END EOS VDD(D) GND(D) GND(A) NMOS linear image sensor S5930 series, etc. Video Integration amplifier Gain amplifier Lowpass filter Burrer Data video *1: Thermistor incorporated in the image sensor (for temperature monitoring of the image sensor) *2: Thermistor mounted on the heatsink fins (for temperature monitoring of the heat radiating side) KACCC0067EA 4

Timing chart CLK ST CLK1/Reset CLK2 Reset CLK2/Clamp Trigger Data video EOS KACCC0068EA Dimensional outline (unit: mm) 49.0 40.0 (4 ) M3 depth 9 115 80.0 94.0 Focal length 7.0 ± 0.5 KACCA0053EA 5

Pin connection 15-pin D-sub connector (socket type) 8 7 6 5 4 3 2 1 15 14 13 12 11 10 9 KACCC0069EA Pin No. Symbol Description 1 NC No connection 2 Data video Analog video output signal. Positive polarity 3 VA1+() Power supply for analog circuitry 4 VA1-(-15 V) Power supply for analog circuitry 5 VD(+5 V, P+) Power supply for digital circuitry. For the thermoelectric cooler in the NMOS linear image sensor 6 Digital input signal to initialize the circuit HCMOS compatible. Positive logic The start pulse interval determines the signal storage time of the sensor. 7 CLK Digital input signal to specify the circuit operation HCMOS compatible. Operates at the rising edge 8 EOS Digital output signal to indicate the end of scan of the NMOS linear image sensor HCMOS compatible. Negative logic 9 A.GND Analog ground 10 A.GND Analog ground 11 NC No connection 12 D.GND(P-) Digital ground. Power supply return of the thermoelectric cooler mounted in the NMOS linear image sensor 13 D.GND Digital ground 14 D.GND Digital ground 15 Trigger Digital output signal for A/D conversion HCMOS compatible. Positive logic Precautions for use The is a precision device, so use sufficient caution when handling it. Never disassemble or modify the device as this may cause an operating failure. Protect the device from shocks such as drops or impacts. Avoid storing the device in high temperature and high humidity locations for long periods of time. Never block the air vents provided on the top and side panels of this unit during operation. Blocking the air vents may cause overheating. When connecting to other equipment, check that the electrical specifications are matched. Never exceed the maximum ratings during operation. Observe the following precautions to obtain the fullest performance of device. Provide a proper shield to protect the device against external electromagnetic effects. Use of a shield cable is recommended. Use a power supply with minimum ripple and noise. Pay attention to prevent extraneous light from entering the device for accurate measurements. 6

Information described in this material is current as of July, 2014. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KACC1018E06 Jul. 2014 DN 7