High-speed detectors with plastic package The and are high-speed APC (auto power control) detectors developed for monitoring laser diodes with a peak wavelength of 66 nm or 78 nm. The is designed for surface mount and the is a plastic package with φ3 mm lens. Features High-speed response 3 MHz typ. (λ=65 nm, VR=2.5 V) 25 MHz typ. (λ=78 nm, VR=2.5 V) High sensitivity :.46 A/W typ. (λ=65 nm) :.45 A/W typ. (λ=65 nm) Applications Laser diode monitor of optical disk unit (high-speed APC) Sensor for red laser diode Structure Parameter Symbol Unit Photosensitive area size - φ.8 φ3. mm Effective photosensitive area -.5 7. mm 2 Package - Surface mount type plastic Plastic with lens - Absolute maximum ratings Parameter Symbol Unit Reverse voltage VR max. 2 V Power dissipation P 5 mw Operating temperature Topr -25 to +85 C Storage temperature Tstg -4 to +1 C Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 C) Parameter Symbol Condition Min. Typ. Max. Min. Typ. Max. Unit Spectral response range λ 33 to 14 34 to 14 nm Peak sensitivity wavelength λp - 76 - - 76 - nm Photosensitivity S λ=66 nm.41.46 -.4.45 - λ=78 nm.47.52 -.46.51 - A/W Dark current ID VR=2.5 V -.1 1. -.1 1. na Temperature coefficient of ID TCID - 1.15 - - 1.15 - times/ C Cutoff frequency fc VR=2.5 V λ=66 nm 15 3-15 3 - RL=5 Ω λ=78 nm 125 25-125 25 - MHz Terminal capacitance Ct VR=2.5 V, f=1 MHz - 4.5 9-4.5 9 pf Noise equivalent power NEP VR=2.5 V - 3.5 1-15 - - 3.5 1-15 - W/Hz 1/2 www.hamamatsu.com 1
, Spectral response Dark current vs. reverse voltage.6 1 na.5 1 pa Photosensitivity (A/W).4.3.2 Dark current 1 pa 1 pa.1 2 4 6 8 1 12 1 fa.1.1 1 1 1 Wavelength (nm) KPINB355EA Reverse voltage (V) KPINB356EA Photosensitivity temperature characteristic Dark current vs. ambient temperature (Typ.) +1. 1-7 (Typ. VR=2.5 V) 1-8 Temperature coefficient (%/ C) +.5 Dark current (A) 1-9 1-1 1-11 1-12 1-13 1-14 1-15 -.5 4 5 6 7 8 9 1 11 1-16 -2-1 1 2 3 4 5 6 7 8 Wavelength (nm) Ambient temperature ( C) KPINB357EA KPINB363EA 2
, Terminal capacitance vs. reverse voltage 1 pf (Typ. Ta=25 C, f=1 MHz) Terminal capacitance 1 pf.1 1 1 1 Reverse voltage (V) KPINB358EA Directivity 3 2 1 1 2 3 2 1 1 2 1 % 3 1 % 3 4 8 % 4 8 % 6 % 4 6 % 4 5 5 6 4 % 6 5 6 4 % 5 6 7 2 % 7 7 2 % 7 8 8 8 8 Relative sensitivity Relative sensitivity KPINB362EA KPINB359EA 3
, Frequency characteristics λ=66 nm λ=78 nm +5 (Typ. Ta=25 C, VR=2.5 V, RL=5 Ω) +5 (Typ. Ta=25 C, VR=2.5 V, RL=5 Ω) Relative output (db) -3-5 Relative output (db) -3-5 -1 1 khz 1 MHz 1 MHz 1 MHz 1 GHz -1 1 khz 1 MHz 1 MHz 1 MHz 1 GHz Frequency Frequency KPINB36EA KPINB361EA Dimensional outlines (unit: mm) Photosensitive area (.8) 4.1 ±.2.6 2.54 1.5 ±.4 4.* 1.5 ±.4 7. ±.3.7 ±.3.7 ±.3 Photosensitive 1 surface.25 5.1 ±.1 5. ±.2 4.7* 1 NC Cathode Anode Cathode.4.8 1.8 5 4.8* Chip position accuracy with respect to the package dimensions marked * X, Y ±.2 θ ±2 Tolerance unless otherwise noted: ±.1 Lead surface finish: silver plating Packing: stick (5 pcs/stick) KPINA15EB 4
, 6 8 Center of lens 4.2 max. 3.8 * Lens 3. 4. ±.2 2.2 ±.15.7 5.2 max. 2.9 4.8* 1.9 R1.5 6 1.2.45 (.8) (1.3) 9.2 ± 1. 8 2.54.45 Chip position accuracy with respect to the package dimensions marked * X, Y ±.2 θ ±2 Tolerance unless otherwise noted: ±.1 Lead surface finish: silver plating Packing: polyethylene pack [anti-static type] (5 pcs/pack) KPINA32EC Information described in this material is current as of July, 212. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 36 Foothill Road, P.O.Box 691, Bridgewater, N.J. 887-91, U.S.A., Telephone: (1) 98-231-96, Fax: (1) 98-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 1, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71, Fax: 33-(1) 69 53 71 1 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 1 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 177-294888, Fax: (44) 177-325777 North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan 35 1644 Kista, Sweden, Telephone: (46) 8-59-31-, Fax: (46) 8-59-31-1 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 22 Arese, (Milano), Italy, Telephone: (39) 2-935-81-733, Fax: (39) 2-935-81-741 China: Hamamatsu Photonics (China) Co., Ltd.: 121 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 12, China, Telephone: (86) 1-6586-66, Fax: (86) 1-6586-2866 Cat. No. KPIN179E2 Jul. 212 DN 5