RGB color sensor. Effective photosensitive area. Green, Red: 2.25 Blue : 4.5

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Si photodiodes S6428-01 S6429-01 S6430-01 RGB color sensor The S6428-01, S6429-01 and S6430-01 are color sensors designed to respectively detect monochromatic colors of blue (λp=460 nm), green (λp=540 nm) and red (λp=660 nm). The uses a 3-channel (RGB) photodiode having blue, green and red sensitivities, and is molded into a surface mount type package. Features Plastic package (6 8 mm) Spectral response range S6428-01: 400 to 540 nm (λp=460 nm) S6429-01: 480 to 600 nm (λp=540 nm) S6430-01: 590 to 720 nm (λp=660 nm) Insensitive to near IR range High sensitivity S6428-01: 2 A/W Typ. (λ=λp) S6429-01: 7 A/W Typ. (λ=λp) S6430-01: 0.45 A/W Typ. (λ=λp) Low dark current Applications White balance adjustment Color identification Projector and TV brightness level detection Color control Light source color temperature detection 3 ch (RGB) Si photodiode Surface mount type plastic package (9 9.6 mm) High sensitivity Structure / Absolute maximum ratings Type no. S6428-01 S6429-01 S6430-01 Photosensitive area size Effective photosensitive area Reverse voltage VR max Absolute maximum ratings Operating Storage temperature temperature Topr Tstg (mm) (mm 2 ) (V) ( C) ( C) 2.4 2.8 6.7 Green, Red: 1.5 1.5 : 1.5 1.5 (2 elements) Green, Red: 2.25 : 4.5 10-10 to +60-20 to +70 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. www.hamamatsu.com 1

Si photodiodes, Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted) Type no. Spectral response range λ Peak sensitivity wavelength λp Photosensitivity S λ=λp Dark current ID VR=1 V Temp. coefficient of ID Rise time tr VR=0 V RL=1 kw 10 to 90 % Terminal capacitance Ct VR=0 V f=10 khz Spectral response half width FWHM * 2 (nm) (nm) (A/W) Typ. (pa) Max. (pa) (times/ C) (µs) Typ. (pf) Max. (pf) (nm) S6428-01 400 to 540 460 2 90 S6429-01 480 to 600 540 7 5 20 200 400 70 S6430-01 590 to 720 660 0.45 90 1.12 0.5 400 to 540 460 0.18 150 300 90 Green 480 to 600 540 3 10 * 1 200 * 1 60 80 150 Red 590 to 720 620 0.16 70 *1: All elements *2: Defined as shown in the figure at right Relative sensitivity (%) 100 50 FWHM Wavelength (nm) KSPDC0031EA 2

Si photodiodes, Spectral response 0.6 0.5 QE=100% S6430-01 (Red) Photosensitivity (A/W) 0.4 0.3 S6429-01 (Green) S6428-01 () 0.1 0 300 400 500 600 700 800 900 1000 1100 1200 Wavelength (nm) KKSPDB0141EC 0.3 QE=100% Photosensitivity (A/W) 0.1 Green Red 0 200 300 400 500 600 700 800 900 1000 1100 1200 Wavelength (nm) KMPDB0217EA 3

Si photodiodes, Linearity 1 ma (Typ. Ta=25 C, VR=0 V, 2856 K) 10 μa (Typ. Ta=25 C, VR=0 V, 2856 K) Short circuit current 100 μa 10 μa 1 μa 100 na S6429-01 S6430-01 S6428-01 Short circuit current 1 μa 100 na 10 na Red Green 10 na 10 100 1000 10000 100000 Illuminance (lx) KSPDB0324EA 1 na 10 100 1000 10000 Illuminance (lx) KSPDB0325EA Dark current vs. reverse voltage Terminal capacitance vs. reverse voltage 1 na 1 nf 100 pa Dark current 10 pa 1 pa Terminal capacitance 100 pf () S6428-01, S6429-01 S6430-01 100 fa 0.01 0.1 1 10 100 Reverse voltage (V) KSPDB0142EC (Red, Green) 10 pf 0.1 1 10 100 Reverse voltage (V) KSPDB0143EC 4

Si photodiodes, Dimensional outlines (unit: mm) (8.5) 1.5 ± 0.4 9.0* 1.5 ± 0.4 Index (C 0.7) (6 ) 0.4 B G 3.4 ± 0.3 6.0 0.8 Photosensitive area 2.8 2.4 Photosensitive surface 1.4 4.5 8.0 1.0 2.2 +0-0.1 0.3 KSPDA0056EA B R 2.54 2.54 9.6 * +0-0.3 + -0.5 +0-0.1 7.8 +0-0.1 Tolerance unless otherwise noted: ±0.15 Lead surface finish: Palladium Standard packing: tray (100 pcs/tray) Photosensitive area Filter 12.0 ± 0.3 Photosensitive surface 1.5 1.5 0.7 ± 0.3 Filter 0.7 ± 0.3 0.6 0.55 0.85 1.5 1.5 1.5 Green Red 0.1 ± 0.1 Details of photodiode Anode () Cathode common Anode (Green) Anode (Red) Cathode common NC Tolerance unless otherwise noted: ±0.1 Chip position accuracy with respect to the package dimensions marked * X, Y ± θ ±2 Lead surface finish: gold plating Standard packing: stick (50 pcs/stick) KMPDA0073ED Note: If excessive vibration is continuously applied to the glass filter, there is a risk that the filter may come off, so secure the glass filter with a holder. 5

Si photodiodes, Measured example of temperature profile with our hot-air reflow oven for product testing The S7505-09 supports lead-free soldering. After unpacking, store it in an environment at a temperature of 30 C or less and a humidity of 60% or less, and perform soldering within 24 hours. 300 C 235 C max. 220 C Temperature 190 C 170 C Preheat 70 to 90 s Soldering 40 s max. Time KSPDB0317EA Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions Disclaimer Metal, Ceramic, Plastic products Surface mount type products Information described in this material is current as of February, 2015. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KSPD1013E07 Feb 2015 DN 6