IMAGE SENSOR InGaAs linear image sensor G99-56D/-5D Near infrared image sensor (.9 to.7 µm) with high-speed data rate HAMAMATSU provides high-speed, near infrared image sensors designed for detectors used in on-line foreign object inspection equipment. These image sensors use square-shaped pixels that are ideally suited for software processing in pattern recognition systems. The signal processing circuit employs CTIA (Charge Transfer Impedance Amplifier) method to perform simultaneous charge integration on all pixels, so there is no time lag among the pixel output signals. Features l High-speed data rate: MHz Typ. l Selectable conversion gain (Cf=. pf, pf) l Pixel size G99-56D: 5 5 µm : 5 5 µm l CMOS readout circuit incorporated l Low dark current l Room temperature operation Applications l Foreign object detection monitors l Near infrared spectroscopy Selection guide Type No. Cooling Number of Pixel pitch Pixel size pixels (µm) [µm (H) µm ()] G99-56D 56 5 5 5 Non-cooled 5 5 5 5 Spectral response range (µm) Defective pixe.9 to.7 (5 C) Less than % Absolute maximum ratings Parameter Symbol alue Unit Clock pulse voltage φmax. 5.5 Operating temperature * Topr - to +7 C Storage temperature * Tstg - to +85 C *: No condensation Electrical characteristics (Ta=5 C) Parameter Symbol Min. Typ. Max. Unit Supply voltage G99-56D.5 5. 5.5.5 5. 5.5 Supply voltage ref -.6 - Supply current G99-56D - 75 I - 8 5 ma Supply current Iref - - ma IIN P - - ma Ground ss - - Element bias..5.6 Clock frequency f. - MHz Clock pulse voltage High.5 5. 5.5 φ Low - -. Clock pulse rise / fall times trφ, tfφ ns Clock pulse width tpwφ - - ns Reset pulse voltage High.5 5. 5.5 (RES) Low - -. Reset pulse rise / fall times tr (RES), tf (RES) ns Reset pulse width * tpw (RES) 6/f - - µs ideo output voltage High H -.5 Low L -.6 - ideo output impedance Zv - 5 - kω A/D trigger voltage trig High - - Low - GND - A/D trigger drive function ad 7HC ch - - - Data rate fv - f - Hz *: 6 µs or more PRELIMINARY DATA Jul. 6
InGaAs linear image sensor G99-56D/-5D Specification (Ta=5 C, =5, =.5, ref=.6, Cf=. pf, integration time µs, per element) Parameter Symbol Condition Min. Typ. Max. Unit Peak sensitivity wavelength λp -.55 - µm Saturation charge Qsat φ=5 -. - pc Dark current 56 ch - ID 5 ch - 5 pa Standard deriation RMS noise voltage (readout noise) N Number of - 9 µ rms integration 5 Saturation voltage sat - - Photo response non uniformity PRNU - ±5 ± % Detective pixel - - - % Equivalent circuit PIXEL Cf= pf Cf=. pf SHIFT REGISTER PHOTODIODE CDS OFFSET COMPENSATION CIRCUIT IDEO TIMING GENERATOR ss Cf SELECT ref EXTERNAL UT KMIRC7EA Basic circuit connection ref Cf SELECT ss IDEO BUFFER AMP BUFFER AMP KMIRCEA
InGaAs linear image sensor G99-56D/-5D Timing chart tr (clk) tf (clk) t tr (RES) tf (RES) t INTEGRATION TIME INTEGRATION TIME ch ch ch ch 5 ch KMIRC5EA Note) Three clock pulses are required for a period from the last pixel to the rising edge of pulse. Parameter Symbol Min. Typ. Max. Unit Clock pulse frequency -. - MHz Clock pulse width tpw (clk) - - ns Clock pulse rise / fall times tr (clk), tf (clk) ns Reset pulse width * tpw (RES) 6/f - - µs Reset pulse rise / fall times tr (RES), tf (RES) ns Clock pulse to start pulse timing t, t 5 - - ns ideo delay time tvd - - ns *: 6 µs or more Spectral response. (Typ. T=5 C) Photo sensitivity temperature characteristics (Typ.) 7 C PHOTO SENSITIITY (A/W).5 RELATIE SENSITIITY (%) 8 6 C - C.5..5..5.5.56.58.6.6.6 WAELENGTH (µm) WAELENGTH (µm) KMIRB9EA KMIRBEA
InGaAs linear image sensor G99-56D/-5D Noise vs. temperature (Typ. =5, =.5, ref=.6, Cf=. pf, Integration time µs, Number of integrations 5). Dark current vs. temperature pa (Typ.) G99-56D.5 pa NOISE (m rms). DARK CURRENT pa.5 - - 5 6 7 TEMPERATURE ( C) KMIRB6EA Dimensional outlines (unit: mm) G99-56D. ±. CMOS AMP.75 ±.8.75 ±.. ±.5.5 ±.5.5 ±.5. ±.5. ±.5 fa fa - - 5 6 7 TEMPERATURE ( C) KMIRB5EA INDEX MARK ACTIE AREA AR COATED SAPPHIRE GLASS.95 ±.. ±. 5. ±.5.5 5 6 7 8 9 5 6 7 8 9 IDEO ref ss Cf-SELECT KMIRA5EA
InGaAs linear image sensor G99-56D/-5D. ±. CMOS AMP.75 ±.8.75 ±.. ±. 5.9 ±.5 5. ±.5 5. ±.5 INDEX MARK ACTIE AREA +. 6.5-. AR COATED SAPPHIRE GLASS.95 ±..5 ±.5 5 6 7 8 9 -EEN -EEN -EEN IDEO-EEN 5 6 7 8 9 IDEO-ODD ref -ODD ss -ODD -ODD Cf-SELECT KMIRA6EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 6 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 6- Ichino-cho, Hamamatsu City, 5-8558 Japan, Telephone: (8) 5--, Fax: (8) 5--58, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 6 Foothill Road, P.O.Box 69, Bridgewater, N.J. 887-9, U.S.A., Telephone: () 98--96, Fax: () 98--8 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr., D-8 Herrsching am Ammersee, Germany, Telephone: (9) 85-75, Fax: (9) 85-658 France: Hamamatsu Photonics France S.A.R.L.: 9, Rue du Saule Trapu, Parc du Moulin de Massy, 988 Massy Cedex, France, Telephone: -() 69 5 7, Fax: -() 69 5 7 United Kingdom: Hamamatsu Photonics UK Limited: Howard Court, Tewin Road, Welwyn Garden City, Hertfordshire AL7 BW, United Kingdom, Telephone: () 77-9888, Fax: () 77-5777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen, SE-7 Solna, Sweden, Telephone: (6) 8-59--, Fax: (6) 8-59-- Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, /E, Arese, (Milano), Italy, Telephone: (9) -95-8-7, Fax: (9) -95-8-7 Cat. No. KMIRE Sept. 6 DN 5