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PHOTOMULTIPLIER TUBES R RP (For Photon Counting) High Cathode Sensitivity with Low Noise Photocathode FEATURES Spectral Response... High Cathode Sensitivity Luminous... Radiant at 00 nm... High Anode Sensitivity (at 0 V) Luminous... nm to 60 nm 60 µa/lm 60 ma/w 00 A/lm Radiant at 00 nm....0 A/W Low Dark Current... 0. na Low Dark Counts (RP)... s - APPLICATIONS Fluorescence Spectrometer Chemiluminescence Detection Raman Spectroscopy Low Light Level Ditection GENERAL Parameter Description / Value Unit Spectral Response Wavelength of Maximum Response to 60 00 nm nm Photocathode MateriaI Low noise bialkali Minimum Effective Area mm Window Material UV glass Dynode Secondary Emitting Surface Low noise bialkali Structure Circular-cage Number of Stages 9 Direct Interelectrode Capacitances Anode to Last Dynode Anode to All Other Electrodes Base SPECIFICATIONS pf 6 pf -pin base JEDEC No. B- Weight Operating Ambient Temperature -30 to +0 Storage Temperature -30 to +0 SuitabIe Socket E6 A (Sold Separately) SuitabIe Socket Assembly E 63 (Sold Separately) E (Sold Separately) g C C Figure : Typical Spectral Response PHOTOCATHODE RADIANT SENSITIVITY (ma/w) QUANTUM EFFICIENCY (%) 0. 0.0 TPMSB00EA CATHODE RADIANT SENSITIVITY QUANTUM EFFICIENCY 00 300 00 00 600 00 00 WAVELENGTH (nm) Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 0 Hamamatsu Photonics..

PHOTOMULTIPLIER TUBES R, RP (For Photon Counting) MAXIMUM RATINGS (Absolute Maximum Values) Parameter Supply Voltage Between Anode and Cathode (DC) Between Anode and Last Dynode (DC) Average Anode Current A Value 0 0 0. Unit V V ma CHARACTERISTlCS (at C) R for General Purpose RP for Photon Counting Parameter Min. Typ. Max. Min. Typ. Cathode Sensitivity Quantum Efficiency (at peak wavelength) Luminous B Radiant (at peak wavelength) 60 Blue Sensitivity Index C 6. Anode Sensitivity Luminous D 00 00 Radiant at 00 nm.0 Gain E Anode Dark Current E After 30 minute Storage in the darkness 0..0 Anode Dark Counts F ENI(Equivalent Noise Input) G 3. - Time Response D Anode Pulse Rise Time H. Electron Transit Time J Transit Time Spread (TTS). 00 6. 6 6. 6 Max. Unit 9 9 % 0 60 0 60 A/lm 60 ma/w 6. 00 A/lm.0 A/W 0. 0. na 0 s - 3. - W.. ns ns ns Anode Current Stability L Current Hysteresis Voltage Hysteresis 0..0 0..0 % % NOTES A: Averaged over any interval of 30 seconds maximum. B: The light source is a tungsten filament lamp operated at a distribution temperature of 6. Supply voltage is 0 volts between the cathode and all other electrodes connected together as anode. C: The value is cathode output current when a blue filter(corning CS-- polished to / stock thickness) is interposed between the light source and the tube under the same condition as Note B. D: Measured with the same light source as Note B and with the anode-tocathode supply voltage and voltage distribution ratio shown in Table below. E: Measured with the same supply voltage and voltage distribution ratio as Note D after removal of light. F: Measured at the plateau voltage. G: ENI is an indication of the photon-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. ENI = q. ldb. G. f S where q = Electronic charge (.60-9 coulomb). ldb = Anode dark current(after 30 minute storage) in amperes. G = Gain. f = Bandwidth of the system in hertz. hertz is used. S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response. H: The rise time is the time for the output pulse to rise from % to 90% of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. J: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitube. In measurement, the whole photocathode is illuminated. : Also called transit time jitter. This is the fluctuation in electron transit time between individual pulses in the signal photoelectron mode, and may be defined as the FWHM of the frequency distribution of electron transit times. L: Hysteresis is temporary instability in anode current after light and voltage are applied. lmax. lmin. Hysteresis = (%) li ANODE CURRENT li l min. 0 6 (minutes) TPMSB000EA ()Current Hysteresis The tube is operated at 0 volts with an anode current of micro-ampere for minutes. The light is then removed from the tube for a minute. The tube is then re-illuminated by the previous light level for a minute to measure the variation. ()Voltage Hysteresis The tube is operated at 300 volts with an anode current of 0. micro-ampere for minutes. The light is then removed from the tube and the supply voltage is quickly increased to 00 volts. After a minute, the supply voltage is then reduced to the previous value and the tube is re-illuminated for a minute to measure the variation. Table :Voltage Distribution Ratio Electrode Dy Dy Dy3 Dy Dy Dy6 Dy Dy Dy9 P Distribution Ratio TIME SuppIy Voltage : 0 V (DC) : Cathode, Dy : Dynode, P : Anode l max.

Figure : Typical Gain and Anode Dark Current Figure 3: Typical Time Response ANODE DAR CURRENT (A) TPMSB006EA - -6 - - -9 - - GAIN ANODE DAR CURRENT 6 3 GAIN TIME (ns) TPMSB000EB 0 60 0 0 6 TRANSIT TIME RISE TIME - 300 00 00 600 00 0 00 300 00 00 0 00 Figure : Typical ENI vs. Wavelength -3 TPMSB00EA Figure : Typical EADCI (Equivalent Anode Dark Current Input) vs. Supply Voltage - TPMSB00EA EQUIVALENT NOISE INPUT (W) - - -6 EADCI (lm) - - -3-00 300 00 00 600 00 00-300 00 00 600 00 0 00 WAVELENGTH (nm) Data shown here, which is given from a relation among supply voltage, anode sensitivity and dark current, serves as a good reference in order to determine the most suitable supply voltage or its range. Figure 6: Typical Plateau Data for RP TPMSB0EA 000 WAVELENGTH OF INCIDENT LIGHT: 0 (nm) 90000 TEMPERATURE : ( C) 0000 90 0 Figure : Typical Temperature Characteristics of Dark Count for RP 3 TPMSB0030EA SIGNAL COUNTS (s - ) 0000 60000 0000 0000 30000 SIGNAL+DAR 0 60 0 0 30 DAR COUNTS (s - ) DAR COUNTS (s - ) 0000 00 DAR 0 0 0 00 0 0 00 0 900 90 0 0 0 00 - -0 0 +0 +0 +60 TEMPERATURE ( C)

PHOTOMULTIPLIER TUBES R, RP (For Photon Counting) Figure : Dimensional Outline and Basing Diagram (Unit: mm). ±. MIN. Figure 9: Socket E6-A (Sold Separately) 9 3 PHOTOCATHODE MIN. 9.0 ±. 0 MAX. 9 MAX. DY6 DY 6 DY DY DY DY3 3 9 DY9 DY P DY DIRECTION OF LIGHT 9 3. 33 Bottom View (Basing Diagram) 3. ± 0. PIN BASE JEDEC No. B- TPMSA000EB TACCA006EA Figure : D Type Socket Assembly E-63 (Sold Separately) 33.0 ± 0.3 3. +0-30.0 0 ± 0. 3.0 ± 0.3 9.0 ± 0.3 9.0 ± 0.3 3.0 ± 0. HOUSING (INSULATOR) POTTING COMPOUND PMT P DY9 DY DY DY6 DY DY DY3 DY DY SOCET PIN No. 9 6 3 R R9 R R R6 R R R3 R R C3 C C SIGNAL GND SIGNAL OUTPUT RG-/U(BLAC) POWER SUPPLY GND AWG (BLAC) R to R : 330 kω C to C3 : nf -HV AWG (VIOLET) Figure : D Type Socket Assembly E- (Sold Separately) 3.0±0.. 6.0±0. R3 A G 30 HOUSING (INSULATOR) 6.0±0. 3.0±0..±0. 0..0±0. -. PMT P DY9 DY DY DY6 DY DY DY3 DY DY SOCET PIN No. 9 6 3 R R9 R R R6 R R R3 R R SIGNAL OUTPUT (A) GND (G) C3 C C R to R : 330 kω C to C3 : nf -HV () * "Wiring diagram at above applies when -HV is supplied." To supply +HV,connect the pin "G" to+hv, and the pin "" to the GND. Refer to "(d) d-" on page for the connection method. TACCA000EH TACCA0EA * Hamamatsu also provides C900 series compact high voltage power supplies and C60 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply. Warning Personal Safety Hazards Electrical Shock Operating voltages applied to this device present a shock hazard. WEB SITE www.hamamatsu.com HAMAMATSU PHOTONICS.., Electron Tube Division 3-, Shimokanzo, Iwata City, Shizuoka Pref., 3-093, Japan, Telephone: ()39/6-, Fax: ()39/6-0 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 69, Bridgewater. N.J. 00-09, U.S.A., Telephone: ()90-3-0960, Fax: ()90-3- E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr., D- Herrsching am Ammersee, Germany, Telephone: (9)-3-0, Fax: (9)-6 E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 9, Rue du Saule Trapu, Parc du Moulin de Massy, 9 Massy Cedex, France, Telephone: (33) 69 3 00, Fax: (33) 69 3 E-mail: infos@hamamatsu.fr United ingdom: Hamamatsu Photonics U Limited: Howard Court, Tewin Road Welwyn Garden City Hertfordshire AL BW, United ingdom, Telephone: -(0)0-9, Fax: (0)0-3 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvägen, SE-- SOLNA, Sweden, Telephone: (6)-09-03-00, Fax: (6)-09-03-0 E-mail: info@hamamatsu.se Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, /E, 000 Arese, (Milano), Italy, Telephone: (39)0-93 33, Fax: (39)0-93 E-mail: info@hamamatsu.it TPMSE03 APR. 0. IP