Image sensor highly sensitive to X-rays from 0 k to 00 kev s are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is made up of N-channel MOS transistors, has low power consumption and is easy to handle. Each photodiode has a large active area, high UV sensitivity yet very low noise, delivering a high S/N even at low light levels. Current output type s also offer excellent output linearity and wide dynamic range. image sensors are variants of S390-F series NMOS image sensors. Having a phosphor-coated fiber optic plate (FOP) as the light input window, the was developed for detection of X-rays and electrons. The S390- FX offers particularly high sensitivity to X-rays from 0 k to 00 kev. The phosphor material used is gadolinium ox sulfide (GdOS Tb) whose composition is carefully selected to provide optimum sensitivity and resolution with a peak emission at 550 nm wavelength. The active area consists of a photodiode array with pixels formed at 50 μm pitches and a height of.5 mm. The number of pixels can be selected from 56 or 5. Hamamatsu S3904 series s are also available with FOP windows coated with the same phosphor material as. Using photodiodes with no phosphor and FOP window also allows direct detection of X-rays at energy levels below 0 kev. Features Applications Wide active area Pixel pitch: 50 μm Pixel height:.5 mm Low dark current and high saturation charge allow a long integration time and a wide dynamic range at room temperature Excellent output linearity and sensitivity spatial uniformity Low power consumption: mw max. Start pulse and clock pulse are CMOS logic compatible Test equipment using X-ray and electron beam transmission X-ray non-destructive inspection X-ray and electron beam detector www.hamamatsu.com
Equivalent circuit Active area structure Start Clock Clock st Active photodiode Digital shift register (MOS shift register) End of scan Active video.5 mm 45 µm Saturation control gate Saturation control drain Dummy video Phosphor material 50 µm Dummy diode Fiber optic plate.0 µm KMPDC000EA Oxidation silicon N type silicon.0 µm 400 µm P type silicon KMPDC0008EA Absolute maximum ratings Parameter Symbol Value Unit Input pulse (ɸ, ɸ, ɸst) voltage Vɸ 5 V Power consumption* P mw Operating temperature* Topr -30 to +60 C Storage temperature Tstg -40 to +80 C *: Vɸ=5.0 V *: No condensation Shape specifications Parameter S390-56FX S390-5FX Unit Number of pixels 56 5 - Package length 3.75 40.6 mm Number of pin - Window material* 3 Fiber optic plate - Weight 8.0 0.0 g *3: To prevent unwanted effects from stray light, is supplied with an aluminum cover fitted on the phosphor-coated FOP.
Specifications (Ta=5 C) Parameter Symbol Min. Typ. Max. Unit Pixel pitch - - 50 - μm Pixel height - -.5 - mm Spectral response range (0% of peak) λ 0 to 00 kev Photo sensitivity S - 0.03 - pc/mr Photodiode dark current* 4 ID - 0. 0.6 pa Photodiode capacitance* 4 Cph - 0 - pf Saturation exposure* 4 Esat - 4 - R Saturation output charge* 4 Qsat - 50 - pc Photo response non-uniformity* 5 PRNU - - ±0 % *4: Vb=.0 V, Vɸ=5.0 V *5: Measured under the following conditions including uniformity in the phosphor emission (but excluding dark current components). X-ray tube voltage: 40 kv, tube current: 3 ma Distance between and X-ray tube: 4 cm Phosphor material: GdOS Tb (thickness=00 μm, λp=550 nm, decay time= ms) Electrical characteristics (Ta=5 C) Parameter Symbol Condition Min. Typ. Max. Unit Clock pulse (ɸ, ɸ) voltage High Vɸ, Vɸ (H) 4.5 5 0 V Low Vɸ, Vɸ (L) 0-0.4 V Start pulse (ɸst) voltage High Vɸst (H) 4.5 Vɸ 0 V Low Vɸst (L) 0-0.4 V Video bias voltage* 6 Vb.5 Vɸ - 3.0 Vɸ -.5 V Saturation control gate voltage Vscg - 0 - V Saturation control drain voltage Vscd - Vb - V Clock pulse (ɸ, ɸ) rise / fall time* 7 trɸ, trɸ tfɸ, tfɸ - 0 - ns Clock pulse (ɸ, ɸ) pulse width tpwɸ, tpwɸ 00 - - ns Start pulse (ɸst) rise / fall time trɸst, tfɸst - 0 - ns Start pulse (ɸst) pulse width tpwɸst 00 - - ns Start pulse (ɸst) and clock pulse (ɸ) overlap tɸov 00 - - ns Clock pulse space* 7 X, X trf - 0 - - ns Data rate* 8 f 0. - 000 khz Video delay time tvd 50% of - 0 (-56 FX) - ns saturation* 8 * 9-60 (-5 FX) - ns Clock pulse (ɸ, ɸ) - 36 (-56 FX) - pf Cɸ 5 V bias line capacitance - 67 (-5 FX) - pf Saturation control gate (Vscg) - 0 (-56 FX) - pf Cscg 5 V bias line capacitance - 35 (-5 FX) - pf Video line capacitance CV V bias - (-56 FX) - pf - 0 (-5 FX) - pf *6: Vɸ is input pulse voltage *7: trf is the clock pulse rise or fall time. A clock pulse space of rise time/fall time - 0 ns (nanoseconds) or more should be input if the clock pulse rise or fall time is longer than 0 ns. *8: Vb=.0 V, Vɸ=5.0 V *9: Measured with C7883 driver circuit. 3
Dimensional outlines (unit: mm) S390-56FX Active area.8.5 6.4 ± 0.3 3.0 3.4 0.4 5.4 ± 0. 3.75 5.0 ± 0. 0.0 Chip surface 0.5 0.5.54 5.4 0.6 KMPDA003EB S390-5FX Active area 5.6.5.8 ± 0.3 5.4 ± 0. 0.4 40.6 5.0 ± 0. 0.0 Chip surface 3.0 3.4 0.5 0.5.54 5.4 0.6 KMPDA003EB 4
Pin connection st 3 0 4 9 Vscg 5 8 6 7 Vscd 7 6 8 5 Active video 9 4 Dummy video 0 3 Vsub End of scan, Vsub and should be grounded. KMPDC0056EA Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions Disclaimer Image sensors Information described in this material is current as of March 07. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 6- Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (8) 53-434-33, Fax: (8) 53-434-584 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: () 908-3-0960, Fax: () 908-3-8 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 0, D-8 Herrsching am Ammersee, Germany, Telephone: (49) 85-375-0, Fax: (49) 85-65-8 France: Hamamatsu Photonics France S.A.R.L.: 9, Rue du Saule Trapu, Parc du Moulin de Massy, 988 Massy Cedex, France, Telephone: 33-() 69 53 7 00, Fax: 33-() 69 53 7 0 United Kingdom: Hamamatsu Photonics UK Limited: Howard Court, 0 Tewin Road, Welwyn Garden City, Hertfordshire AL7 BW, United Kingdom, Telephone: (44) 707-94888, Fax: (44) 707-35777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 6440 Kista, Sweden, Telephone: (46) 8-509-03-00, Fax: (46) 8-509-03-0 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, int. 6, 000 Arese (Milano), Italy, Telephone: (39) 0-9358733, Fax: (39) 0-935874 China: Hamamatsu Photonics (China) Co., Ltd.: B0, Jiaming Center, No.7 Dongsanhuan Beilu, Chaoyang District, Beijing 0000, China, Telephone: (86) 0-6586-6006, Fax: (86) 0-6586-866 Cat. No. KMPD005E07 Mar. 07 DN 5