High-speed photodiodes (S5973 series: 1 GHz)

Similar documents
Effective photosensitive area. Photosensitive area size

Si PIN photodiodes. High-speed detectors with plastic package. Structure. Absolute maximum ratings

Si PIN photodiodes. High-speed detectors with plastic package. Structure. Absolute maximum ratings

Parameter Specification Unit Photosensitive area mm Package Glass epoxy - Seal material Epoxy resin -

Effective photosensitive* 2 area size. Storage temperature Tstg (mm) ( C) ( C) S φ0.2 φ0.5 S φ to to +100 S9075

These Si photodiodes have sensitivity in the UV to near IR range. They are suitable for low-light-level detection in analysis and the like.

Parameter Specification Unit Photosensitive area mm Package Glass epoxy - Seal material Silicone resin -

Applications. Photosensitive area size. Storage temperature Tstg (mm) (mm 2 ) (V) ( C) ( C) S

Reverse voltage VR max. Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted) Short. Temp. S coefficient (A/W) of

Suppressed IR sensitivity

Effective photosensitive area (mm) Photosensitive area size

Effective photosensitive area (mm)

Parameter Symbol Specification Unit Photosensitive area - ɸ0.8 mm Package mm

Low bias operation, for 800 nm band

Short wavelength type APD. Effective photosensitive area (mm) Effective photosensitive area size* 2

Si photodiode. Applicable to lead-free solder reflow and wide temperature range. S9674. Absolute maximum ratings

RGB color sensor. Effective photosensitive area. Green, Red: 2.25 Blue : 4.5

1-D PSD with small plastic package

Photosensitive area size (mm) Reverse voltage VR max (V) R to +60

M=100, RL=50 Ω λ=800 nm, -3 db

Peak emission wavelength: 4.3 μm

InAsSb photovoltaic detector

Photon counting module

Driver circuit for CCD linear image sensor

Peak emission wavelength: 3.9 μm

APD modules. Operates an APD with single 5 V supply (standard type, short-wavelength type) C12702 series.

PbSe photoconductive detectors

MCT photoconductive detectors

Between elements measure. Photosensitive area (per 1 element)

Non-discrete position sensors utilizing photodiode surface resistance

APD modules. APD module integrated with peripheral circuits. C12703 series. Selection guide. Block diagram

InGaAs PIN photodiode arrays

Photosensitive area (mm) 4 4. Peak sensitivity wavelength (nm) Supply voltage Dark state. Max. Vcc max. Tstg Min. Max. (ma) (V)

MCT photoconductive detectors

Signal processing circuit for 2-D PSD

InAsSb photovoltaic detector

Driver circuit for MPPC

Infrared detector modules with preamp

Photo IC diode. Wide operating temperature: -40 to +105 C. S MT. Absolute maximum ratings (Ta=25 C)

Photo IC diode. Plastic package shaped the same as metal package. S SB. Absolute maximum ratings (Ta=25 C)

MPPC (multi-pixel photon counter)

Signal processing circuit for 1-D PSD

Artisan Technology Group is your source for quality new and certified-used/pre-owned equipment

16-element Si photodiode arrays

InAsSb photovoltaic detectors

Variable gain and stable detection even at high gains

16-element Si photodiode arrays

Peak sensitivity wavelength λp (nm) Photosensitive area (mm)

Signal processing circuit for 2-D PSD

Application OCT. Dimensions (mm) Weight (g) Operating temperature* 1 Storage temperature* 1 λ=1.55 μm (V) (mw)

Photo IC diode. COB (chip on board) type, small package. S CT. Absolute maximum ratings

Optics modules. Absorbance measurement module with built-in photodiode array, optical elements, current-tovoltage. C13398 series.

Near infrared image sensor (0.9 to 1.7 µm) with high-speed data rate

Signal processing circuit for 1-D PSD

MPPC modules. MPPC array modules for very-low-level light detection, 16 ch analog output. C13368/C13369 series (Analog output type)

Applications. Number of terminals. Supply voltage (op amp) Vcc

MPPC (Multi-Pixel Photon Counter)

NMOS linear image sensor

InGaAs multichannel detector head

Photosensor with front-end IC

Driver circuit for InGaAs linear image sensor

Driver circuit for CCD linear image sensor

APD module. Variable gain, stable detection even at high gain. C Applications. Features. Sensitivity vs.

Applications. l Image input devices l Optical sensing devices

16-element Si photodiode arrays

LCOS-SLM (Liquid Crystal on Silicon - Spatial Light Modulator)

Photo IC diode. Plastic package shaped the same as metal package. S SB. Features. Applications

InAsSb photovoltaic detectors

16-element Si photodiode arrays

Driver circuit for CMOS linear image sensor

Photodiode modules. C10439 series. Integrates photodiode for precision photometry with low-noise amp.

Driver circuits for CCD image sensor

Power supply for MPPC

Driver circuit for CMOS linear image sensor

Driver circuit for CCD linear image sensor

Reduced color temperature errors

CMOS linear image sensors

CMOS linear image sensor

Driver circuit for InGaAs linear image sensor

Driver circuits for photodiode array with amplifier

S P. Ultra-miniature, high performance Electromagnetically driven laser scanning MEMS mirror. Features.

Power supply for MPPC

Mini-spectrometer. SMD series C14384MA-01. High sensitivity in the near infrared region (to 1050 nm), ultra-compact grating type spectrometer

12-bit digital output

CMOS linear image sensor

UV-LED MODULE. UV Irradiation Intensity Distribution Graphs

MPPC modules. Photon counting module with built-in MPPC. C series C10751 series. Selection guide

Photo IC for optical switch

MPPC (Multi-Pixel Photon Counter) arrays

Accessories for infrared detector

MPPC (Multi-Pixel Photon Counter)

MS series. Parameter Min. Typ. Max. Unit Driving voltage V Power consumption mw Video rate khz

NMOS multichannel detector head

CMOS linear image sensors

CMOS linear image sensor

InGaAs linear image sensors

InGaAs linear image sensors

Mini-spectrometer. TG series. For near IR, integrating optical system, image sensor and circuit. C9406GC, C9913GC, C9914GB

Mini-spectrometers. TM series. High sensitivity type (integrated with backthinned type CCD image sensor) C10082CA/C10083CA series

Driver circuit for CCD image sensor

Transcription:

S5973 series High-speed photodiodes (S5973 series: 1 GHz), and S5973 series are high-speed Si PIN photodiodes designed for visible to near infrared light detection. These photodiodes provide wideband characteristics at a low bias, making them suitable for optical communications and other high-speed photometry. S5973 series includes a mini-lens type (S5973-1) that can be ef ciently coupled to an optical ber and a violet sensitivity enhanced type (S5973-2) ideal for violet laser detection. Features High-speed response : 1 MHz (VR=1 V) : 5 MHz (VR=1 V) S5973 series: 1 GHz (VR=3.3 V) Low price High sensitivity S5973-2:.3 A/W, QE=91 % (λ=41 nm) High reliability Applications Optical ber communications High-speed photometry Violet laser detection (S5973-2) General ratings / Absolute maximum ratings Type No. Dimensional outline/ Window material * 1 Package Active area size Effective active area Reverse voltage VR Max. Absolute maximum ratings Power Operating Storage dissipation temperature temperature P Topr Tstg (mm) (mm) (mm 2 ) (V) (mw) ( C) ( C) 1.2 1.1 /K.8.5 S5973 TO-18 2 5-4 to +1-55 to +125 S5973-1 /L.4.12 S5973-2 /K Electrical and optical characteristics Spectral Peak response sensitivity range wavelength p Photo sensitivity S (A/W) Short circuit current Isc 1 lx Dark current ID Temp. coef cient of ID TCID Cut-off frequency fc Terminal capacitance Ct f=1 MHz NEP VR=1 V = p Type No. 66 78 83 p nm nm nm Typ. Max. (nm) (nm) ( A) (na) (na) (times/ C) (GHz) (pf) (W/Hz 1/2 ) 32 to 16 9.64.6 1..7 * 3 1 * 3.1 * 3.55 3 * 3 7.4 1-15 8.57.55.42.1 * 3.5 * 3.5 * 3 3.1 1.44-15 S5973.9 1.15 32 to 1.52.51.47 76.1 * 4.1 * 4 1 * 4 1.6 * 4 1.1 1-15 * 4 S5973-1.42 S5973-2.45.3 * 2.42.37.7 1.9 1-15 * 2, * 4 *1: Window material K: borosilicate glass, L: lens type borosilicate glass *2: =41 nm *3: VR=1 V *4: VR=3.3 V www.hamamatsu.com 1

,, S5973 series PHOTO SENSITIVITY (A/W) Spectral response.7.6.5 S5973-2.4.3.2.1 (Typ. Ta=25 C) S5973/-1 TEMPERATURE COEFFICIENT (%/ C) Photo sensitivity temperature characteristics +1.5 +1. +.5 (Typ.) 3 4 5 6 7 8 9 1 11 -.5 2 4 6 8 1 WAVELENGTH (nm) KPINB157EB WAVELENGTH (nm) KPINB158EA Frequency response +1 (Typ. Ta=25 C, λ=83 nm, RL=5 Ω) Cut-off frequency vs. reverse voltage 1 GHz (Typ. Ta=25 C, λ=83 nm, RL=5 Ω) RELATIVE OUTPUT (db) -3-1 (VR=1 V) (VR=1 V) (VR=3.3 V) CUT-OFF FREQUENCY 1 GHz 1 MHz -2 1 MHz 1 MHz 1 MHz 1 GHz 1 GHz 1 MHz 1 1 1 FREQUENCY KPINB159EB KPINB16EB 2

,, S5973 series Dark current vs. reverse voltage Terminal capacitance vs. reverse voltage 1 pa (Typ. Ta=25 C) 1 pf (Typ. Ta=25 C, f=1 MHz) DARK CURRENT 1 pa 1 pa TERMINAL CAPACITANCE 1 pf 1 fa.1 1 1 1 1 pf.1 1 1 1 KPINB161EA KPINB162EA Fiber coupling characteristics (S5973-1) X, Y direction Z direction.6 (Typ. Ta=25 C, λ=78 nm, NA=.2).6 (Typ. Ta=25 C, λ=78 nm, NA=.2) FIBER-COUPLED SENSITIVITY (A/W).5.4.3.2.1 OPTICAL FIBER (CORE DIAMETER: 5 μm) Y X Z LIGHT SOURCE=78 nm LD Z=.5 mm FIBER-COUPLED SENSITIVITY (A/W).5.4.3.2.1 OPTICAL FIBER (CORE DIAMETER: 5 μm) X Y Z LIGHT SOURCE =78 nm LD X, Y= mm -.8 -.4 +.4 +.8.2.5 1 2 5 1 2 SHIFT FROM LENS CENTER X, Y (mm) KPINB88EA DISTANCE BETWEEN LENS AND FIBER END Z (mm) KPINB89EA 3

,, S5973 series Dimensional outline (unit: mm),, S5973 S5973-1 3. ±.2 5.4 ±.2 4.7 ±.1 3.6 ±.2 1.5 LENS 5.4 ±.2 4.6 ±.1.65 ±.15 3.75 ±.2.45 13.45 13.5 2.54 ±.2 2.54 ±.2 KPINA22EB KPINA23EA S5973-2 2. MIN. 5.4 ±.2 4.7 ±.1 3.75 ±.2.45 13 2.54 ±.2 KPINA61EB 4

,, S5973 series Information described in this material is current as of June, 211. Product specifications are subject to change without prior notice due to improvements or other reasons. Before assembly into final products, please contact us for the delivery specification sheet to check the latest information. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 36 Foothill Road, P.O.Box 691, Bridgewater, N.J. 887-91, U.S.A., Telephone: (1) 98-231-96, Fax: (1) 98-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 1, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71, Fax: 33-(1) 69 53 71 1 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 1 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 177-294888, Fax: (44) 177-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-59-31-, Fax: (46) 8-59-31-1 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, 22 Arese, (Milano), Italy, Telephone: (39) 2-935-81-733, Fax: (39) 2-935-81-741 5 Cat. No. KPIN125E7 Jun. 211 DN