Studies of SiPM @ Padova Flavio Dal Corso INFN-Padova
Plans & Objectives Characterization of Silicon Photo Multipliers of different manufacturers and geometries: Currents Gain & Efficiency Dark Rate Time resolution on Long term stability Search for the best working point. Comparison of performances. Flavio Dal Corso INFN-Padova 2
SiPM are very sensitive to temperature Measurements must be performed in a thermostatic chamber. Cooling element (peltier) Range: 40 C Precision: /6 C improvement heating resistor Control unit SiPM box Flavio Dal Corso INFN-Padova 3
Devices Available Current Current time I(V) Gain Dark Rate vs laser Stablity resolution id nome caratteristiche intensity note id SiPM mm 2 Ok I prototipi FBK:abbandonati id 2 SiPM2 mm 2 Ok I prototipi ti i FBK:abbandonati id 3 SiPM3 mm 2 Ok I prototipi FBK:abbandonati id 4 SiPM4 mm 2 Ok I prototipi FBK:abbandonati id 5 SiPM5 mm 2 Ok I prototipi FBK:abbandonati id 6 SiPM 40-I mm 2 625 pixel 40x40 II prototipi FBK id 7 SiPM 40-II mm 2 625 pixel 40x40 II prototipi FBK id 8 SiPM 40-III mm 2 625 pixel 40x40 II prototipi ti i FBK id 9 SiPM 40-IV mm 2 625 pixel 40x40 Ok Ok da comp. poco II prototipi FBK. Ceduto a Evgeniy Kravchenko id SiPM 50-I mm 2 400 pixel 50x50 Ok Ok Ok II prototipi FBK id SiPM 50-II mm 2 400 pixel 50x50 II prototipi FBK id 2 SiPM 50-III mm 2 400 pixel 50x50 II prototipi FBK id 3 SiPM 50-IV mm 2 400 pixel 50x50 da comp. Ok Ok da comp. II prototipi FBK id 4 SiPM 0-I mm 2 0 pixel 0x0 Ok Ok Ok Ok Ok II prototipi FBK id 5 SiPM 0-II mm 2 0 pixel 0x0 Ok male Ok male II prototipi FBK id 6 MPPC 25U-355 mm 2 600 pixel 25x25 Hamamatsu id 7 MPPC 25U-356 mm 2 600 pixel 25x25 Hamamatsu id 8 MPPC 50U-old mm 2 400 pixel 50x50 male Hamamatsu id 9 MPPC 50U-503 mm 2 400 pixel 50x50 Ok male Hamamatsu. Ceduto a Evgeniy Kravchenko id 20 MPPC 50C-79 mm 2 400 pixel 50x50 Hamamatsu id 2 MPPC 0U-38 mm 2 0 pixel 0x0 Ok NO Ok poco Hamamatsu id 22 MPPC 0U-39 mm 2 0 pixel 0x0 Hamamatsu id 23 MPPC 0P-66 9 mm 2 900 pixel 0x0 Ok NO Ok Hamamatsu id 24 CPTA 49-35 4,4 mm 2 746 pixel 50x50 Ok Ok Ok Ok Ok from CPTA (da Evgeniy Kravchenko ) Green: measurement done Yellow: not completed Red: tried unsuccessfully Flavio Dal Corso INFN-Padova 4
) Devices Characterization Current vs Vbias & Temperature SiPM (FBK),E-04,E-05 SiPM 40 IV I(V) curves very regular,e-06 Low and linear T dependence Quite high I ( few μa) at working point SiPM 50 I Current (A),E-07,E-08,E-09,E- 30 3 32 33 34 35 36 37 38 39 40 Vbias (V) C 5 C 40 C A,E-04 30 32 34 36 38 40,E-05,E-06,E-07,E-08,E-09 A,E-05 C,E-06 5 C SiPM 0 I,E-04 30 30,5 3 3,5 32 32,5 33 33,5 34 34,5 35,E-07,E-08,E-09 C 5 C 23 C 24 C,E- V,E- V Flavio Dal Corso INFN-Padova 5
Devices Characterization Current vs Vbias & Temperature Current (A),E-04,E-05,E-06,E-07,E-08,E-09,E- MPPC 50 503 C 5 C MPPC (Hmamatsu): I(V) curves quite irregular Higher and non-linear T dependence Lower current ( μa) 40 C,E-,E-2 65 66 67 68 69 70 7 Vbias (V) MPPC 0 38,E-03 65 66 67 68 69 70 7,E-04 MPPC 0P 66,E-04 67 68 69 70 7 72 73,E-05 A,E-05,E-06,E-07,E-08 E09,E-09 5 20 25 30 35 40 A,E-06,E-07,E-08,E-09, 5 20 25 30 34,8 39,8,E-,E-,E-2 mv,e- Flavio Dal Corso INFN-Padova,E- 6 mv
Devices Characterization Gain mv Gain(mV/e) 40 SiPM 20 0 80 60 40 20-20 40 20 0 80 60 40 20 SiPM 50 I 0 3 32 33 34 35 36 37 38 39 V SiPM 50 y = 36.85x - 26 (^C) y = 35.868x - 28 (5^C) y = 36.734x - 69. (20^C) y = 35.78x - 47.7 (25^C) y = 34.9x - 33.7 (30^C) y = 34.48x - 28.9 (35^C) C gain (mv/g) 5 C gain (mv/g) gain (mv/g) gain (mv/g) gain (mv/g) gain (mv/g) Lineare ( gain (mv/g)) Lineare ( gain (mv/g)) Lineare ( C gain (mv/g)) Lineare (5 C gain (mv/g)) Lineare ( gain (mv/g)) Lineare ( gain (mv/g)) 0 0 2 3 4 5 6 7 V-V(0) C 5 C Gain (mv/γ) 6.0 4.0 2.0.0 (FBK) 8.0 6.0 40 4.0 Characteristics very linear, both G(V) and G(T). G(V-Vo) Vo) doesn't depend on T (Vo = V @ G=0) absolute definition of Working Point (no gain measurement performed on MPPC up to now) SiPM_40x40_IV 2.0 5 5 20 25 30 35 40 Temperature ( C) Flavio Dal Corso INFN-Padova 7 33.4 33.8 34.2 34.6 35 35.4 39 Lineare (35.4) Lineare (35) Lineare (34.6) Lineare (34.2) Lineare (33.8) Lineare (33.4)
Dark Rates SiPM_50x50_IV SiPM_50x50_IV 000 00 000 Rate (KHz) Dark 0 0. 0.0 0.0 0.5.0.5 2.0 2.5 3.0 3.5 Threshold (# of photons) 33V 5 C 34V 5 C 35V 5 C Dark Rate (KHz) 00 0 0.5g 33V 05g34V 0.5g 0.5g 35V.5g 33V.5g 34V.5g 35V 2.5g 33V 000 SiPM_50x50_IV 0. 2.5g 34V 2.5g 35V Dark Rate (KHz) Dark Rate (KHz) 00 0 0. 0.0 0.0 0.5.0.5 2.0 2.5 3.0 3.5 Threshold (# of photons) 000 00 0 0. SiPM_50x50_IV 0.0 0.0 0.5.0.5 2.0 2.5 3.0 3.5 Threshold (# of photons) 33V 34V 35V 33V 34V 35V 0.0 4 6 8 20 22 24 26 Temperature ( C) SiPM (FBK) Almost flat vs temperature Dark rate decrease very quickly with threshold, Flavio Dal Corso INFN-Padova 8
KHZ 000 00 0 0, 0,0 dark Rate SiPM 50 I @ 0 50 0 50 200 250 300 Vthr (mv) Dark Rates Comparisons 33 V 34 V 35 V 36 V 37 V Moderate dependence on geometry (SiPM50 SiPM0) MPPC less noisy than SiPM at γ, more noisy at 2 γ (but a better comparison will require some normalization wrt gain, efficiency etc ) Dark Rate SiPM 0 I @ Dark Rate MPPC 0U-38 @ 000 000 00 00 0 0 KHz 33.5V 34V 34.5V khz 69V 69.5V 70V 0 200 400 600 800 00 200 0 200 400 600 800 00 200 0, 0, 0,0 Vthr (mv) 0,0 mv Flavio Dal Corso INFN-Padova 9
Devices Characterization Reverse Current Stability Cur (A) SiPM 0 I Current Stability @,750E-06,745E-06,740E-06,735E-06,730E-06 725E-06,725E,720E-06,75E-06 0 86400 72800 259200 345600 432000 58400 604800 69200 sec SiPM 40 IV Current Stability @ FBK devices show jumps, fluctuations, slow drifts. Impacts on dark rate, gain, device life? Hamamatsu devices seem more stable. Very preliminary results (few devices measured, influence from environment?) 4,760E-06 4,750E-06 4,740E-06 4,730E-06 4,720E-06 4,7E-06 4,700E-06 4,690E-06 06 4,680E-06 4,670E-06 825 MPPC 0U-38 current stability 0 3600 7200 800 4400 8000 2600 25200 28800 32400 sec 36000 39600 43200 46800 50400 54000 57600 6200 820 85 565 Current stability SiPM 50 I 8 na 560 555 550 545 540 535 530 na 805 800 795 790 525 520 55 0 86400 72800 259200 345600 432000 sec 785 0 86400 72800 259200 345600 Flavio Dal Corso INFN-Padova sec
CPTA 49-35,E-04 30 32 34 36 38 40 42 44,E-05 A KHz,E-06,E-07,E-08,E-09 V Dark Rate 000 00 0 0 20 30 40 50 60 70 80 90 mv C 5 C 37V 38V 39V I(V) characteristic ti very regular: stronger T dependence w.r.t. SiPM Quite low reverse current and Dark Rate (comparable to mm 2 devices) Flavio Dal Corso INFN-Padova
CPTA 49-35 Gain mv 8 6 4 2 y = 2,345x - 74,9 y = 2,3433x - 74,332 y = 2,359x - 75,282 y = 2,35x - 75,474 y = 2,322x - 74,302 y = 2,2444x - 72,377 C 5 C Lineare ( C) Lineare (5 C) 8 Lineare () Lineare () Lineare () 6 CPTA gain Lineare () 34 35 36 37 38 39 40 8 V Very good gain Less linear vs T at high T G(V-Vo) not completely independent from T 6 Gain (mv/e) 4 2 C 5 C 8 6 2 3 4 5 6 7 8 V-Vo Flavio Dal Corso INFN-Padova 2
Plans Radiation i hardness studies: next week a single SIPM will be irradiated with MeV neutron at LNL Works in progress : Characterization of all devices Absolute efficiency measurements Time resolution measurements Electronics optimization : - higher amplification - s/n improvements (studies of charge integrating ADC vs peak sensing ADC) Procurement of FBK devices 5x5 mm 2 (array of 8x8 SiPM,.5x.5 mm 2 each, on a single chip) Flavio Dal Corso INFN-Padova 3