MPPC (multi-pixel photon counter)

Similar documents
MPPC (Multi-Pixel Photon Counter)

MPPC (Multi-Pixel Photon Counter) arrays

Photon counting module

MPPC (Multi-Pixel Photon Counter)

Parameter Specification Unit Photosensitive area mm Package Glass epoxy - Seal material Silicone resin -

M=100, RL=50 Ω λ=800 nm, -3 db

Short wavelength type APD. Effective photosensitive area (mm) Effective photosensitive area size* 2

Peak emission wavelength: 4.3 μm

RGB color sensor. Effective photosensitive area. Green, Red: 2.25 Blue : 4.5

Effective photosensitive* 2 area size. Storage temperature Tstg (mm) ( C) ( C) S φ0.2 φ0.5 S φ to to +100 S9075

Si photodiode. Applicable to lead-free solder reflow and wide temperature range. S9674. Absolute maximum ratings

Parameter Specification Unit Photosensitive area mm Package Glass epoxy - Seal material Epoxy resin -

Effective photosensitive area (mm) Photosensitive area size

Peak emission wavelength: 3.9 μm

These Si photodiodes have sensitivity in the UV to near IR range. They are suitable for low-light-level detection in analysis and the like.

Low bias operation, for 800 nm band

Suppressed IR sensitivity

Photosensitive area size (mm) Reverse voltage VR max (V) R to +60

Effective photosensitive area. Photosensitive area size

Applications. Photosensitive area size. Storage temperature Tstg (mm) (mm 2 ) (V) ( C) ( C) S

Photo IC diode. Wide operating temperature: -40 to +105 C. S MT. Absolute maximum ratings (Ta=25 C)

MPPC modules. MPPC array modules for very-low-level light detection, 16 ch analog output. C13368/C13369 series (Analog output type)

Parameter Symbol Specification Unit Photosensitive area - ɸ0.8 mm Package mm

Photosensor with front-end IC

Si PIN photodiodes. High-speed detectors with plastic package. Structure. Absolute maximum ratings

Reverse voltage VR max. Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted) Short. Temp. S coefficient (A/W) of

1-D PSD with small plastic package

Effective photosensitive area (mm)

Signal processing circuit for 2-D PSD

Signal processing circuit for 1-D PSD

Driver circuit for MPPC

Between elements measure. Photosensitive area (per 1 element)

Si PIN photodiodes. High-speed detectors with plastic package. Structure. Absolute maximum ratings

16-element Si photodiode arrays

APD modules. Operates an APD with single 5 V supply (standard type, short-wavelength type) C12702 series.

Power supply for MPPC

InAsSb photovoltaic detector

Non-discrete position sensors utilizing photodiode surface resistance

Optics modules. Absorbance measurement module with built-in photodiode array, optical elements, current-tovoltage. C13398 series.

Driver circuit for InGaAs linear image sensor

Photo IC diode. Plastic package shaped the same as metal package. S SB. Absolute maximum ratings (Ta=25 C)

Infrared detector modules with preamp

PbSe photoconductive detectors

16-element Si photodiode arrays

MCT photoconductive detectors

Peak sensitivity wavelength λp (nm) Photosensitive area (mm)

Photo IC diode. COB (chip on board) type, small package. S CT. Absolute maximum ratings

APD modules. APD module integrated with peripheral circuits. C12703 series. Selection guide. Block diagram

InAsSb photovoltaic detectors

InGaAs PIN photodiode arrays

InAsSb photovoltaic detector

16-element Si photodiode arrays

MCT photoconductive detectors

Power supply for MPPC

Driver circuit for CMOS linear image sensor

Driver circuit for CCD linear image sensor

Signal processing circuit for 1-D PSD

Signal processing circuit for 2-D PSD

Photosensitive area (mm) 4 4. Peak sensitivity wavelength (nm) Supply voltage Dark state. Max. Vcc max. Tstg Min. Max. (ma) (V)

Photo IC diode. Plastic package shaped the same as metal package. S SB. Features. Applications

Application OCT. Dimensions (mm) Weight (g) Operating temperature* 1 Storage temperature* 1 λ=1.55 μm (V) (mw)

InAsSb photovoltaic detectors

16-element Si photodiode arrays

NMOS linear image sensor

Driver circuits for CCD image sensor

High-speed photodiodes (S5973 series: 1 GHz)

Driver circuit for CMOS linear image sensor

InGaAs multichannel detector head

Driver circuit for InGaAs linear image sensor

Driver circuit for CCD linear image sensor

Reduced color temperature errors

CMOS linear image sensors

12-bit digital output

MPPC modules. Photon counting module with built-in MPPC. C series C10751 series. Selection guide

S P. Ultra-miniature, high performance Electromagnetically driven laser scanning MEMS mirror. Features.

APD module. Variable gain, stable detection even at high gain. C Applications. Features. Sensitivity vs.

Photodiode modules. C10439 series. Integrates photodiode for precision photometry with low-noise amp.

Accessories for infrared detector

Driver circuit for CCD linear image sensor

Photo IC for optical switch

LCOS-SLM (Liquid Crystal on Silicon - Spatial Light Modulator)

Driver circuits for photodiode array with amplifier

CMOS linear image sensor

Mini-spectrometer. SMD series C14384MA-01. High sensitivity in the near infrared region (to 1050 nm), ultra-compact grating type spectrometer

CMOS linear image sensor

CMOS linear image sensors

CMOS linear image sensor

Driver circuit for CCD image sensor

MPPC and MPPC module for precision measurement

Applications. l Image input devices l Optical sensing devices

Distance linear image sensor

CMOS linear image sensor

InGaAs linear image sensors

Variable gain and stable detection even at high gains

CMOS linear image sensors

CMOS linear image sensor

CMOS linear image sensors. CMOS linear image sensors. Built-in timing generator and signal processing circuit; 3.3 V single supply operation

InGaAs linear image sensors

Artisan Technology Group is your source for quality new and certified-used/pre-owned equipment

InGaAs linear image sensors

Transcription:

MPPC (multi-pixel photon counter) Low afterpulses, wide dynamic range, for high-speed measurement Photosensitive area: 1 1 mm These MPPCs utilize very small pixels arrayed at high densities to achieve a high-speed recovery time and wide dynamic range. Hamamatsu currently produces MPPC with a pixel density up to 1 pixels/mm 2 (pixel pitch: 1 μm). Utilizing advanced technology to enhance photon detection efficiency minimizes the drop in photon detection efficiency that usually occurs due to shrinking the pixel pitch. Features Low afterpulse High fill factor High photon detection efficiency Wide operating voltage range Short recovery time High count rate Applications Scintillation measurement Low-light-level detection Scattered light measurement Related product (sold separately) MPPC module C1129-11 Low afterpulse When an MPPC detects photons, the output may contain spurious signals appearing with a time delay from the light input to the MPPC. These signals are called afterpulses. Compared to our previously marketed products, the S12571 series have drastically reduced afterpulses due to use of improved materials and wafer process technologies. Reducing afterpulses brings various benefits such as a better S/N, a wider operating voltage range, and improved time resolution and photon detection efficiency in high voltage regions. Pulse waveform comparison Previous product S12571 series (M=1.25 1 6 ) (M=1.25 1 6 ) 5 mv 5 mv 1 ns 1 ns www.hamamatsu.com 1

Structure Parameter Symbol S12571-1C -1P -15C -15P Unit Effective photosensitive area - 1 1 1 1 mm Pixel pitch - 1 15 μm Number of pixels - 1 4489 - Geometrical fill factor - 33 53 % Package - Ceramic Surface mount type Ceramic Surface mount type - Window - Silicone resin Epoxy resin Silicone resin Epoxy resin - Window refractive index - 1.41 1.55 1.41 1.55 - Absolute maximum ratings (Ta=25 C) Parameter Symbol S12571-1C -1P -15C -15P Unit Operating temperature* 1 Topr -2 to +6-2 to +6 C Storage temperature* 1 Tstg -2 to +8-2 to +8 C Reflow soldering conditions* 2 Tsol Peak temperature: Peak temperature: 24 C, twice (see P.5) 24 C, twice (see P.5) - Soldering conditions - 35 C max. once, 3 s max.* 3-35 C max. once, 3 s max.* 3 - - *1: No condensation When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. *2: JEDEC level 5a *3: At least 1 mm away from lead root Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 C, unless otherwise noted) Parameter Symbol S12571-1C -1P -15C -15P Unit Spectral response range λ 32 to 9 32 to 9 nm Peak sensitivity wavelength λp 47 46 nm Photon detection efficiency (λ=λp)* 4 PDE 1 25 % Dark count* 5 Typ. 1 1 - Max. 2 2 kcps Time resolution (FWHM)* 6-3 25 ps Terminal capacitance Ct 35 35 pf Gain M 1.35 1 5 2.3 1 5 - Gain temperature coefficient ΔTM 1.6 1 3 3.5 1 3 / C Breakdown voltage VBR 65 ± 1 65 ± 1 V Recommended operating voltage Vop VBR + 4.5 VBR + 4. V Temperature coefficient of recommended operating voltage ΔTVop 6 6 mv/ C *4: Photon detection efficiency does not include crosstalk or afterpulses. *5: Threshold=.5 p.e. *6: Single photon level Note: The above characteristics were measured the operating voltage that yields the gain listed in this catalog. (Refer to the data attached to each product.) The last letter of each type number indicates the package type (C: ceramic, P: surface mount type). 2

Photon detection efficiency vs. wavelength S12571-1C/P S12571-15C/P 5 (Typ.=25 C, Vop=VBR + 4.5 V) 5 (Typ.=25 C, Vop=VBR + 4. V) Photon detection efficiency (%) 4 3 2 1 S12571-1P Photon detection efficiency (%) 4 3 2 1 S12571-15P S12571-15C S12571-1C 3 4 5 6 7 8 9 3 4 5 6 7 8 9 Wavelength (nm) Wavelength (nm) KAPDB216EA KAPDB215EA Photon detection efficiency does not include crosstalk or afterpulses. Gain vs. overvoltage Photon detection efficiency vs. overvoltage 5 1 5 (Typ. Ta=25 C) 6 (Typ. Ta=25 C, λ=48 nm) Gain 4 1 5 3 1 5 2 1 5 1 1 5 S12571-15C S12571-1C 1 2 3 4 5 6 7 8 9 Photon detection efficiency (%) 5 4 3 2 1 S12571-15C S12571-1C 1 2 3 4 5 6 7 8 Overvoltage (V) Overvoltage (V) KAPDB245EB KAPDB244EA 3

Crosstalk probability vs. overvoltage 5 (Typ. Ta=25 C) 4 Crosstalk probability (%) 3 2 1 S12571-1C S12571-15C 1 2 3 4 5 6 7 8 Overvoltage (V) KAPDB246EB Because the high-speed, wide dynamic range MPPC has a small pixel capacitance, the gain is smaller than the MPPC for general measurement. The gain and photon detection efficiency are increased by applying the higher operating voltage. Please use it with the appropriate operating voltage because the crosstalk increases at the same time. Dimensional outlines (unit: mm) S12571-1/-15C S12571-1/-15P Cathode terminal indicator hole Photosensitive area 1. 1. + 6.-.25.975 ±.15 Photosensitive area 1. 1. 2.425.45 ±.15.3.85 ±.15 Photosensitive surface 5. 1.9 Photosensitive surface Silicone resin.55 Epoxy resin 1..45 Lead 12 ± 1. 1.5 2.325.55 1.1 Tolerance unless otherwise noted: ±.1 KAPDA142EA 3. Tolerance unless otherwise noted: ±.2 KAPDA141EA 4

Connection example +V 1 kω.1 μf MPPC Signal Amplifier KAPDC24EB Measured example of temperature profile with our hot-air reflow oven for product testing 3 C 24 C max. 22 C Temperature 19 C 17 C Preheat 7 to 9 s Soldering 4 s max. Time KPICB171EA This surface mount type product supports lead-free soldering. After unpacking, store it in an environment at a temperature of 25 C or less and a humidity of 6% or less, and perform soldering within 24 hours. This effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used. Before actual reflow soldering, check for any problems by testing out the reflow soldering methods in advance. Precautions If necessary, incorporate appropriate protective circuits in power supplies, devices, and measuring instruments to prevent overvoltage and overcurrent. 5

Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions Disclaimer Metal, ceramic, plastic package products Surface mount type products MPPC is a registered trademark of Hamamatsu Photonics K.K. Information described in this material is current as of December, 215. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 36 Foothill Road, Bridgewater, N.J. 887, U.S.A., Telephone: (1) 98-231-96, Fax: (1) 98-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 1, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71, Fax: 33-(1) 69 53 71 1 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 1 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 177-294888, Fax: (44) 177-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 1644 Kista, Sweden, Telephone: (46) 8-59-31-, Fax: (46) 8-59-31-1 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 22 Arese (Milano), Italy, Telephone: (39) 2-93581733, Fax: (39) 2-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B121, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 12, China, Telephone: (86) 1-6586-66, Fax: (86) 1-6586-2866 Cat. No.KAPD144E4 Dec. 215 DN 6