CMOS linear image sensors Built-in timing generator and signal processing circuit; 3.3 V single supply operation The is a small CMOS linear image sensor designed for image input applications. The signal processing circuit has a charge amplifier with excellent input/output characteristics. Two package styles are provided: a DIP type and a surface mount type. Features Pixel pitch: 7.8 μm Pixel height: 125 μm 1024 pixels 3.3 V single power supply operation available High sensitivity, low dark current, low noise On-chip charge amplifier with excellent input/output characteristics Built-in timing generator allows operation with only start and clock pulse inputs. data rate: 200 khz max. Spectral response range: 400 to 1000 nm Two package styles are provided: DIP (dual inline package) type: S9226-03 Surface mount type: S9226-04 Applications Analytical instruments Position detection Image reading Structure Parameter S9226-03 S9226-04 Unit Number of pixels 1024 - Pixel pitch 7.8 µm Pixel height 125 µm Photosensitive area length 7.9872 mm Package Ceramic - Window material Borosilicate glass (Tempax) - Absolute maximum ratings Parameter Symbol Value Unit Supply voltage Vdd -0.3 to 6 V Gain selection terminal voltage Vg -0.3 to 6 V Clock pulse voltage V() -0.3 to 6 V Start pulse voltage V(ST) -0.3 to 6 V Operating temperature* 1 Topr -5 to 60 C Storage temperature* 1 Tstg -10 to 70 C Reflow soldering condition* 2 * 3 Tsol Peak temperature 240 C, 2 times (See P.8.) - Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. *1: No condensation *2: S9226-04 *3: JEDEC level 5 www.hamamatsu.com 1
Recommended terminal voltage (Ta=25 C) Parameter Symbol Min. Typ. Max. Unit Supply voltage Vdd 3.3 5 5.25 V - 0 - V Gain selection terminal voltage Vg Vdd - 0.25 Vdd Vdd 0.25 V Clock pulse voltage High level Vdd - 0.25 Vdd Vdd 0.25 V V() Low level - 0 - V Start pulse voltage High level Vdd - 0.25 Vdd Vdd 0.25 V V(ST) Low level - 0 - V Electrical characteristics [Ta=25 C, Vdd=5 V, V()=V(ST)=5 V] Parameter Symbol Min. Typ. Max. Unit Clock pulse frequency f() 10 k - 800 k Hz data rate VR - f()/4 - Hz Power consumption P 20 30 40 mw Conversion efficiency - 3.2 - CE - 1.6 - µv/e- Output impedance Zo - 185 - W Electrical and optical characteristics [Ta=25 C, Vdd=5 V, V()=V(ST)=5 V] Parameter Symbol Min. Typ. Max. Unit Spectral response range l 400 to 1000 nm Peak sensitivity wavelength lp - 650 - nm Dark current ID - 5 50 fa Dark output voltage* 4-0.8 8 Vd - 0.4 4 mv Saturation output voltage* 5 Vsat 2.2 3.2 - V Readout noise - 1.4 2.2 Nr - 0.7 1.1 mv rms Offset output voltage Vo 0.2 0.35 0.6 V Photoresponse nonuniformity* 6 * 7 PRNU - ±5 % *4: Integration time=10 ms *5: Voltage difference with respect to Vo *6: Photoresponse nonuniformity (PRNU) is the output nonuniformity that occurs when the entire photosensitive area is uniformly illuminated by light which is 50% of the saturation exposure level. PRNU is measured using 1022 pixels excluding the pixels at both ends, and is defined as follows: PRNU = DX/X 100 (%) X: average output of all pixels, DX: difference between X and maximum or minimum output *7: Measured with a tungsten lamp of 2856 K Block diagram ST Trig Vdd EOS Vg Timing generator Shift register Address switch Charge amp Clamp circuit 1 2 3 4 5 1023 1024 Photodiode array KMPDC0165EC 2
Spectral response (typical example) 100 (Ta=25 C) 80 Relative sensitivity (%) 60 40 20 0 400 500 600 700 800 900 1000 1100 Wavelength (nm) KMPDB0229EC Resolution CTF: contrast transfer function CTF = VWO - VBO VW - VB VWO : output white level VBO : output black level VW : output white level (when input pattern pulse width is wide) VB : output black level (when input pattern pulse width is wide) Contrast transfer function Contrast transfer function vs. spatial frequency (typical example) 1.0 0.8 0.6 0.4 0.2 Previous type (Ta=25 C, ) 0 0 10 20 30 40 50 Spatial frequency (line pairs/mm) KMPDB0318EB 3
Dark output voltage vs. temperature (typical example) 100 Vdd=5 V Vdd=3.3 V (Ts=10 ms) Dark output voltage (mv) 10 1 0.1 0.01 0.001-20 0 20 40 60 80 Temperature ( C) KMPDB0319EB Current consumption vs. temerature (typical example) 6.5 6.0 Vdd=5 V Vdd=3.3 V (Dark state) Current consumption (ma) 5.5 5.0 4.5 4.0 3.5 3.0 2.5-20 0 20 40 60 80 Temperature ( C) KMPDB0320EB 4
Output waveform of one element [Typ. Ta=25 C, Vdd=5 V, f()=800 khz] Saturation state 3.55 V Saturation output voltage=3.2 V 1 V/div. Dark state 0.35 V Output offset voltage=0.35 V Trigger 10 V/div. 400 ns/div. [Typ. Ta=25 C, Vdd=5 V, f()=800 khz] Saturation state 3.55 V Saturation output voltage=3.2 V 1 V/div. Dark state 0.35 V Output offset voltage=0.35 V Trigger 10 V/div. 400 ns/div. 5
Timing chart 1/f() tpi(st), Integration time ST Trig EOS tr() tf() 1/f() tr(st) tf(st) ST tvd KMPDC0164EC Parameter Symbol Min. Typ. Max. Unit Start pulse cycle tpi(st) 4104/f() - - s Start pulse rise and fall times tr(st), tf(st) 0 20 30 ns Clock pulse duty ratio - 40 50 60 % Clock pulse rise and fall times tr(), tf() 0 20 30 ns delay time* 8 tvd 10 20 30 ns *8: Ta=25 C, Vdd=5 V, V()=V(ST)=5 V Note: The pulse should be set from high to low just once when the st pulse is low. The internal shift register starts operating at this timing. The integration time is determined by the start pulse cycles. However, since the charge integration of each pixel is carried out between the signal readout of that pixel and the next signal readout of the same pixel, the start time of charge integration differs depending on each pixel. In addition, the next start pulse cannot be input until signal readout from all pixels is completed. 6
Dimensional outlines (unit: mm) S9226-03 Photosensitive area 7.9872 0.125 5.0 ± 0.5 1 ch Pin no. 1 2.54 ± 0.13 12.0 ± 0.3 8 A 1 A 4 7.62 ± 0.13 5 Direction of scan 3.935 ± 0.25 0.5 ± 0.05 7.87 ± 0.25 1.5 ± 0.15 0.5 ± 0.05 1.05 ± 0.2* Photosensitive surface 0.05 0.25-0.03 7.62 ± 0.25 * A-A cross section * Distance from upper surface of window to photosensitive surface KMPDA0172EF Pin no. Symbol Pin name Input/Output 1 Ground Input 2 Clock pulse Input 3 Trig Trigger pulse Output 4 ST Start pulse Input 5 Vg Gain selection voltage Input 6 signal* 9 Output 7 EOS End of scan Output 8 Vdd Supply voltage Input *9: Connect a buffer amplifier for impedance conversion to the video output terminal so as to minimize the current flow. As the buffer amplifier, use a high input impedance operational amplifier with JFET or CMOS input. Note: Leave the NC terminals open and do not connect them to. S9226-04 Photosensitive area 7.9872 0.125 12.5 ± 0.2 16 A 9 0.5 ± 0.05 1.5 ± 0.15 1 A 8 1 ch 1.05 ± 0.2* (4 )R0.2 Direction of scan 3.5 ± 0.2 7.0 ± 0.2 Photosensitive surface A-A cross section (16 )1.0 (16 )0.6 9 16 8 1 1.27 8.89 Index mark * Distance from upper surface of window to photosensitive surface KMPDA0258EC Pin no. Symbol Pin name Input/Output Pin no. Symbol Pin name Input/Output 1 NC No connection 9 NC No connection 2 NC No connection 10 NC No connection 3 Ground Input 11 Vg Gain selection voltage Input 4 Clock pulse Input 12 signal* 9 Output 5 Trig Trigger pulse Output 13 EOS End of scan Output 6 ST Start pulse Input 14 Vdd Supply voltage Input 7 NC No connection 15 NC No connection 8 NC No connection 16 NC No connection *9: Connect a buffer amplifier for impedance conversion to the video output terminal so as to minimize the current flow. As the buffer amplifier, use a high input impedance operational amplifier with JFET or CMOS input. Note: Leave the NC terminals open and do not connect them to. 7
Precautions (1) Electrostatic countermeasures This device has a built-in protection circuit against static electrical charges. However, to prevent destroying the device with electrostatic charges, take countermeasures such as grounding yourself, the workbench and tools to prevent static discharges. Also protect this device from surge voltages which might be caused by peripheral equipment. (2) Light input window If the incident window is contaminated or scratched, the output uniformity will deteriorate considerably, so care should be taken in handling the window. Avoid touching it with bare hands. The window surface should be cleaned before using the device. If dry cloth or dry cotton swab is used to rub the window surface, static electricity may be generated, and therefore this practice should be avoided. Use soft cloth, cotton swab or soft paper moistened with ethyl alcohol to wipe off dirt and foreign matter on the window surface. (3) Soldering To prevent damaging the device during soldering, take precautions to prevent excessive soldering temperatures and times. Soldering should be performed within 5 seconds at a soldering temperature below 260 C. (4) Reflow soldering (S9226-04) Soldering conditions may differ depending on the board size, reflow furnace, etc. Check the conditions before soldering. A sudden temperature rise and cooling may be the cause of trouble, so make sure that the temperature change is within 4 C per second. The bonding portion between the ceramic base and the glass may discolor after reflow soldering, but this has no adverse effects on the hermetic sealing of the product. (5) Operating and storage environments Always observe the rated temperature range when handling the device. Operating or storing the device at an excessively high temperature and humidity may cause variations in performance characteristics and must be avoided. (6) UV exposure This product is not designed to prevent deterioration of characteristics caused by UV exposure, so do not expose it to UV light. Recommended temperature profile reflow soldering (S9226-04) 300 Peak temperature 240 C max. 250 Temperature ( C) 200 150 100 50 0 0 50 100 150 200 250 300 Time (s) KAPDB0169EA 8
Application circuit example (S9226-03)* 10 0.1 µf 22 µf /25 V ST 5 V 82 Ω 1 2 3 Trig Vdd EOS 8 7 6 5 V 0.1 µf 5 V 22 µf /25 V 0.1 µf 22 µf /25 V EOS Trig 74HC541 Vg 82 Ω 4 ST Vg S9226-03 5 5 V 74HC541 0.1 µf 22 µf /25 V 100 Ω - LT1818 51 Ω 22 pf 22 µf /25 V 0.1 µf -5 V KMPDC0416EA *10: The S9226-04 has a different pin connections, but uses the same circuit. Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions Disclaimer Image sensors/precautions Surface mount type products/precautions Information described in this material is current as of August, 2017. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KMPD1121E08 Aug. 2017 DN 9