Peak emission wavelength: 3.9 μm

Similar documents
Peak emission wavelength: 4.3 μm

Effective photosensitive area. Photosensitive area size

Short wavelength type APD. Effective photosensitive area (mm) Effective photosensitive area size* 2

Photosensitive area size (mm) Reverse voltage VR max (V) R to +60

Parameter Symbol Specification Unit Photosensitive area - ɸ0.8 mm Package mm

Low bias operation, for 800 nm band

Effective photosensitive area (mm)

MPPC modules. MPPC array modules for very-low-level light detection, 16 ch analog output. C13368/C13369 series (Analog output type)

InAsSb photovoltaic detector

Optics modules. Absorbance measurement module with built-in photodiode array, optical elements, current-tovoltage. C13398 series.

Effective photosensitive area (mm) Photosensitive area size

InAsSb photovoltaic detectors

These Si photodiodes have sensitivity in the UV to near IR range. They are suitable for low-light-level detection in analysis and the like.

Parameter Specification Unit Photosensitive area mm Package Glass epoxy - Seal material Silicone resin -

Si photodiode. Applicable to lead-free solder reflow and wide temperature range. S9674. Absolute maximum ratings

Applications. Photosensitive area size. Storage temperature Tstg (mm) (mm 2 ) (V) ( C) ( C) S

MPPC (Multi-Pixel Photon Counter)

Photosensor with front-end IC

M=100, RL=50 Ω λ=800 nm, -3 db

RGB color sensor. Effective photosensitive area. Green, Red: 2.25 Blue : 4.5

MPPC (multi-pixel photon counter)

Suppressed IR sensitivity

Photon counting module

InGaAs PIN photodiode arrays

InAsSb photovoltaic detectors

Application OCT. Dimensions (mm) Weight (g) Operating temperature* 1 Storage temperature* 1 λ=1.55 μm (V) (mw)

InAsSb photovoltaic detector

Reverse voltage VR max. Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted) Short. Temp. S coefficient (A/W) of

Photo IC diode. Plastic package shaped the same as metal package. S SB. Features. Applications

Effective photosensitive* 2 area size. Storage temperature Tstg (mm) ( C) ( C) S φ0.2 φ0.5 S φ to to +100 S9075

Parameter Specification Unit Photosensitive area mm Package Glass epoxy - Seal material Epoxy resin -

Si PIN photodiodes. High-speed detectors with plastic package. Structure. Absolute maximum ratings

Photo IC diode. Wide operating temperature: -40 to +105 C. S MT. Absolute maximum ratings (Ta=25 C)

Power supply for MPPC

Accessories for infrared detector

Signal processing circuit for 2-D PSD

16-element Si photodiode arrays

1-D PSD with small plastic package

Si PIN photodiodes. High-speed detectors with plastic package. Structure. Absolute maximum ratings

MPPC (Multi-Pixel Photon Counter)

16-element Si photodiode arrays

Photo IC diode. Plastic package shaped the same as metal package. S SB. Absolute maximum ratings (Ta=25 C)

Signal processing circuit for 1-D PSD

Reduced color temperature errors

PbSe photoconductive detectors

Driver circuit for InGaAs linear image sensor

Photo IC diode. COB (chip on board) type, small package. S CT. Absolute maximum ratings

MCT photoconductive detectors

Between elements measure. Photosensitive area (per 1 element)

Infrared detector modules with preamp

APD modules. Operates an APD with single 5 V supply (standard type, short-wavelength type) C12702 series.

Power supply for MPPC

Driver circuit for CMOS linear image sensor

Driver circuit for CCD linear image sensor

Non-discrete position sensors utilizing photodiode surface resistance

Driver circuit for InGaAs linear image sensor

Photo IC for optical switch

MCT photoconductive detectors

Driver circuit for MPPC

APD modules. APD module integrated with peripheral circuits. C12703 series. Selection guide. Block diagram

Peak sensitivity wavelength λp (nm) Photosensitive area (mm)

Photodiode modules. C10439 series. Integrates photodiode for precision photometry with low-noise amp.

Signal processing circuit for 2-D PSD

Mini-spectrometer. SMD series C14384MA-01. High sensitivity in the near infrared region (to 1050 nm), ultra-compact grating type spectrometer

16-element Si photodiode arrays

High-speed photodiodes (S5973 series: 1 GHz)

Driver circuits for CCD image sensor

Signal processing circuit for 1-D PSD

Photosensitive area (mm) 4 4. Peak sensitivity wavelength (nm) Supply voltage Dark state. Max. Vcc max. Tstg Min. Max. (ma) (V)

NMOS linear image sensor

MPPC (Multi-Pixel Photon Counter) arrays

InGaAs multichannel detector head

S P. Ultra-miniature, high performance Electromagnetically driven laser scanning MEMS mirror. Features.

Driver circuit for CCD linear image sensor

Driver circuit for CMOS linear image sensor

12-bit digital output

Distance linear image sensor

CMOS linear image sensors

Driver circuit for CCD linear image sensor

APD module. Variable gain, stable detection even at high gain. C Applications. Features. Sensitivity vs.

Driver circuits for photodiode array with amplifier

16-element Si photodiode arrays

CMOS linear image sensor

LCOS-SLM (Liquid Crystal on Silicon - Spatial Light Modulator)

Mini-spectrometer. TF series. Compact and thin, built-in high-sensitivity CMOS image sensor for Raman spectroscopy C14214MA. Applications.

CMOS linear image sensor

Driver circuit for CCD image sensor

TM series TM-UV/VIS-MOS

InGaAs linear image sensors

mini-spectrometer TG series Long-wavelength type (to 2.55 μm) nearinfrared C11118GA Optical characteristics (Ta=25 C)

InGaAs linear image sensors

Mini-spectrometer. TM series. Trigger function and a high sensitivity CMOS image sensor included. C11697MB. Optical characteristics

InGaAs multichannel detector head

CMOS linear image sensor

CMOS linear image sensor

CMOS linear image sensor

Near infrared image sensor (0.9 to 1.7 µm) with high-speed data rate

Mini-spectrometer. TG series. Enhanced near infrared sensitivity type. C9405CB. High sensitivity in near infrared region

CMOS linear image sensors

CMOS linear image sensors

Transcription:

Peak emission wavelength: 3.9 μm The is a high-output mid-infrared LED with a 3.9 µm peak emission wavelength. It is a product that has been achieved using Hamamatsu unique crystal growth technology and process technology. It is a suitable reference light source for gas measurement. Features Applications High output High-speed response High reliability Surface mount type ceramic package (L3454-39C) Reference light source for gas measurement Absolute maximum ratings (Ta=25 C unless otherwise noted) Parameter Symbol Condition L3454-39C L3454-39M Unit Reverse voltage VR V Forward current (QCW mode)* IFqcw Pulse width= μs Duty ratio=5% ma Pulse forward current IFP Pulse width= μs Duty ratio=%.5 A Power dissipation P mw Operating temperature Topr No dew condensation* 2-3 to +85 C Storage temperature Tstg No dew condensation* 2-4 to + C Reflow soldering condition - Peak temperature: 26 C, 2 times* 3 - - *: Quasi continuous wave mode *2: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and reliability. *3: JEDEC level 3 Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Electrical and optical characteristics (Ta=25 C) Parameter Symbol Condition Min. Typ. Max. Unit Peak emission wavelength λp IF= ma, QCW mode 3.8 3.9 4. µm Spectral half width λ IF= ma, QCW mode -.5.8 µm Radiant flux ϕe IF= ma, QCW mode..2 - mw Forward voltage VF IF= ma, QCW mode -.7 2. V Reverse current IR VR= mv - - µa Rise time tr to 9% - - µs www.hamamatsu.com

Emission spectrum Radiant flux vs. pulse forward current (Typ. Ta=25 C, IF= ma, QCW mode) (Typ. Ta=25 C, tw= µs, %) 6 4 Radiant flux (mw). 2. 3 4 5 6 Wavelength (μm) Pulse forward current (ma) KLEDB449EA KLEDB45EA Pulse forward current vs. pulse forward voltage Directivity (Typ. Ta=25 C, tw= µs, %) L3454-39C (Typ. Ta=25 C, distance between LED and photodiode: 3 cm) Pulse forward current (ma) 6 4 4 6..5 2. 2.5 3. 3.5 KLEDB464EA Pulse forward voltage (V) KLEDB45EA 2

Light output vs. ambient temperature L3454-39M 4 (Typ. IF=5 ma, QCW mode) (Typ. Ta=25 C, distance between LED and photodiode: 5 cm) 6 4 4 6 KLEDB452EA 6 4 3 4 5 6 7 9 Ambient temperature ( C) KLEDB453EA Allowable forward current vs. ambient temperature Allowable forward current vs. duty ratio (Ta=25 C) Relative forward current (%) 6 4 Allowable forward current (A). tw= µs tw= µs -4-4 6 Ambient temperature ( C) KLEDB448EA... Duty ratio (%) KLEDB48EA 3

Dimensional outlines (unit: mm) L3454-39C L3454-39M 3.8 ±.2 ɸ5.4 ±.2 2.86 ±. ɸ4.72 ±. 3.8 ±.2 2.86 ±. ɸ2.2 min. 2.75 ±.2 3.5 ±.2.5 ±.2 t=.3 Emission section. ±.2.5 ±.2.7 ±.2.8 ±.2 ϕ.43 lead ϕ2.54 ±.2 Case 2.7 ± KLEDAEB KLEDA5EA Recommended land pattern (unit: mm) 4.3.2 4.3 KLEDC52EA 4

Recommended solder reflow conditions Peak temperature - 5 C: 3 s max. Peak temperature: 26 C 27 C 3 C/s max. -6 C/s max. Temperature ( C) 5 to C Preheat 6 to s Soldering 6 to 5 s 25 C to peak temperature: 8 min max. Time After unpacking, store the device in an environment at a temperature range of 5 to 3 C and a humidity of 6% or less, and perform reflow soldering within 68 hours. The effect that the product receives during reflow soldering varies depending on the circuit board and reflow oven that are used. Before actual reflow soldering, check for any problems by testing out the reflow soldering methods in advance. KLEDB465EA Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions Disclaimer Metal, ceramic, plastic packages Technical information LED Information described in this material is current as of December 7. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 26- Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (8) 53-434-33, Fax: (8) 53-434-584 U.S.A.: Hamamatsu Corporation: 36 Foothill Road, Bridgewater, N.J. 87, U.S.A., Telephone: () 98-23-96, Fax: () 98-23-28, E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr., D-822 Herrsching am Ammersee, Germany, Telephone: (49) 852-375-, Fax: (49) 852-265-8, E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 9, Rue du Saule Trapu, Parc du Moulin de Massy, 9882 Massy Cedex, France, Telephone: 33-() 69 53 7, Fax: 33-() 69 53 7, E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, Tewin Road, Welwyn Garden City, Hertfordshire AL7 BW, United Kingdom, Telephone: (44) 77-294888, Fax: (44) 77-325777, E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 644 Kista, Sweden, Telephone: (46)8-59 3, Fax: (46)8-59 3, E-mail: info@hamamatsu.se Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, int. 6, Arese (Milano), Italy, Telephone: (39)2-93 58 7 33, Fax: (39)2-93 58 7 4, E-mail: info@hamamatsu.it China: Hamamatsu Photonics (China) Co., Ltd.: B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing, China, Telephone: (86) -6586-66, Fax: (86) -6586-2866, E-mail: hpc@hamamatsu.com.cn Taiwan: Hamamatsu Photonics Taiwan Co., Ltd.: 8F-3, No. 58, Section2, Gongdao 5th Road, East District, Hsinchu, 3, Taiwan R.O.C. Telephone: (886)3-659-, Fax: (886)3-659-8, E-mail: info@hamamatsu.com.tw Cat. No. KLED74E2 Dec. 7 DN 5